Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC81T60SNCX1SA1

Name: SIGC81T60SNCX1SA1
Brand: Infineon Technologies
SKU: SIGC81T60SNCX1SA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIGC81T60SNCX1SA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC81T60SNCX1SA1.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,275

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIGC81T60SNC from Infineon Technologies is a 600 V, 100 A NPT (Non-Punch-Through) IGBT die designed for high-power switching in industrial motor drives. It features a 100 µm chip thickness, positive temperature coefficient for stable paralleling, short-circuit ruggedness, and 8.99 × 8.99 mm² active die area. Used in 600 V IGBT modules for variable-speed drive inverters.

For engineers reviewing the SIGC81T60SNC datasheet, SIGC81T60SNC pinout (emitter/gate/collector terminals), SIGC81T60SNC application in motor drive inverters, or SIGC81T60SNC equivalent for high-current NPT IGBT dies, this page provides verified die-level specifications, thermal and switching behavior, metallization details, and module integration guidance.

Technical Context

This IGBT die employs Non-Punch-Through (NPT) technology with a 100 µm silicon thickness, enabling robust short-circuit withstand time (tSC ≥ 10 µs at Tj = 150 °C) and inherent positive VCE(sat) temperature coefficient. Its 72.6 mm² active area supports 100 A DC collector current under optimized thermal assembly.

Dynamic performance includes typ. 450 ns turn-off delay and 90 ns fall time at VCC = 400 V, IC = 100 A, Tj = 150 °C, RG = 3.3 Ω - 40% faster turn-off than Infineon's Standard IGBT 2 under comparable conditions. Input capacitance (Ciss) is 5.43–6.5 nF at VCE = 25 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	600 V - Maximum blocking voltage before avalanche; defines use in 400 V AC input (600 V DC bus) drive systems.
I_C (DC)	100 A - Continuous collector current at T_jmax; requires heatsink design supporting ~1.9 W/mm² power dissipation.
V_CE(sat)	1.7–2.5 V @ V_GE=15 V, I_C=100 A - Directly determines conduction loss and thermal load in inverter legs.
t_d(off) + t_f	540–756 ns @ T_j=150 °C - Total turn-off interval defining minimum dead-time and switching frequency limit (~20 kHz max).
Short-Circuit Withstand	Proven - Enables hardware-level fault protection without external desaturation detection in module-level designs.
Emitter Metallization	3200 nm Al-Si (1%) - Supports high-current wire bonding (Al ≤500 µm) and low-resistance emitter interconnect in module substrates.
Die Thickness	100 µm - Optimized NPT profile for balanced conduction/switching trade-off and mechanical handling robustness.

Pinout & Package

SIGC81T60SNC is an unpackaged silicon die (not a packaged component). It has three electrically isolated terminal areas on its top surface: one large emitter pad (8 × 1.77 × 2.82 mm), one gate pad (0.78 × 1.51 mm), and one collector metallization layer on the backside. No leadframe or molded package is present.

Pin/Terminal	Circuit Role	Design Meaning
Emitter Pad (front side)	Main current exit path	8 parallel Al bond pads (1.77 × 2.82 mm each); enables low-inductance, multi-wire emitter connection in press-pack or solder-bonded modules.
Gate Pad (front side)	Control electrode	Single 0.78 × 1.51 mm Al pad; requires low-inductance gate loop layout to avoid oscillation during fast switching.
Collector (backside)	Main current entry path	Ni/Ag metallization (1400 nm); compatible with epoxy or soft-solder die attach; forms cathode-side conduction path in half-bridge configuration.

Key Features

Feature	Design Value
Positive V_CE(sat) tempco	Enables stable current sharing when multiple dies are paralleled without active current balancing circuitry.
Short-circuit proof	Validated for ≥10 µs withstand at rated V_CE, allowing safe operation under overload without immediate failure.
Photoimide passivation	Frontside insulation layer resistant to humidity and process chemicals, critical for reliability in high-voltage module assembly.
150 mm wafer format	Enables high-yield production of 169 dies per wafer, supporting cost-effective volume supply for OEM module manufacturers.
ESD-sensitive handling	Classified per MIL-STD-883; requires grounded workstations and ionized air during die placement to prevent gate oxide damage.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 30–75 kW HVAC compressors and pump drives.

IC Role / Device Role / Timing Role: High-current switching element in IGBT module half-bridge leg; handles 100 A RMS output with 400 V DC bus.

Use Value: Positive tempco and short-circuit ruggedness reduce need for per-die current sensing and enable simplified thermal derating.

Use Scenario: Output inverter stage of online double-conversion UPS systems delivering clean 230 V AC.

IC Role / Device Role / Timing Role: Fast-switching power switch in 16–20 kHz PWM stage; paired with freewheeling diodes in hybrid modules.

Use Value: 40% faster turn-off vs. Standard IGBT 2 reduces switching losses by ~18% at 16 kHz, improving system efficiency.

Welding Equipment

Traction Inverters (Auxiliary)

Use Scenario: Primary DC-link chopper and inverter in IGBT-based inverter welders (200–400 A output).

IC Role / Device Role / Timing Role: High-pulsed-current switch (I_Cpuls = 300 A) operating with 50–100 µs on-times and forced-air cooling.

Use Value: 100 µm NPT structure sustains repeated short-circuit events during arc ignition without latch-up.

Use Scenario: Auxiliary converter in rail vehicle traction systems powering HVAC, lighting, and control electronics.

IC Role / Device Role / Timing Role: 600 V, 100 A die used in compact, epoxy-bonded half-bridge modules meeting EN 50155 vibration and thermal cycling specs.

Use Value: Ni/Ag collector metallization ensures reliable soft-solder attachment to ceramic DBC substrates under thermal shock.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPT IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW20N60T	600 V, 20 A TO-247 packaged IGBT; lower current rating, integrated package parasitics.	Targeted at discrete half-bridge designs, not module integration.	Select only if full-module assembly is not required and board-level mounting is preferred.
FF200R12KE4	1200 V, 200 A dual IGBT module; higher voltage class, different die technology (TRENCHSTOP), larger footprint.	Used in 690 V AC industrial drives and renewable energy converters.	Choose only when 1200 V blocking capability and pre-assembled dual configuration are mandatory.

Compared with IKW20N60T and FF200R12KE4, SIGC81T60SNC offers unmatched 100 A die-level current density in 600 V NPT architecture - essential for space-constrained, high-reliability module builders requiring custom thermal and electrical optimization.

Availability

SIGC81T60SNC is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, welding equipment, and auxiliary traction inverters requiring stable component supply and long-term module manufacturing continuity.

Supply support for SIGC81T60SNC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

SIGC81T60SNC belongs to Infineon's high-power discrete IGBT die portfolio, developed specifically for module makers building rugged, high-efficiency 600 V inverters for industrial automation and energy conversion.

FAQ

Is SIGC81T60SNC supplied in tape-and-reel or waffle pack?

No - SIGC81T60SNC is delivered as bare die on foil (Q67050-A4164-A003), sawn and tested on 150 mm wafers. It is not supplied in tape-and-reel, tray, or waffle pack formats. Customers receive die arrays mounted on carrier foils suitable for automated pick-and-place in module assembly lines.

What is the maximum recommended gate resistor value for reliable switching?

Based on measured switching characteristics, a gate resistor of 3.3 Ω is specified for turn-off testing at Tj = 150 °C. For reliable EMI control and dv/dt limitation, values between 2.2 Ω and 5.6 Ω are recommended; values >10 Ω increase switching losses significantly without meaningful noise reduction benefit.

Can SIGC81T60SNC be bonded using conductive epoxy instead of solder?

Yes - the Ni/Ag collector metallization is qualified for both soft-solder (SnAgCu) and electrically conductive epoxy die attach. Conductive epoxy is acceptable for lower-power-density modules where peak junction temperatures remain below 130 °C and thermal cycling is limited.

Does this die include integrated anti-parallel diode functionality?

No - SIGC81T60SNC is a standalone NPT IGBT die with no integrated freewheeling diode. Module designers must pair it with a separate ultrafast recovery diode (e.g., IDP20E65D1) or use a co-packaged diode die in the same module substrate to handle inductive load commutation.

SIGC81T60SNCX1SA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 100 A

Current - Collector Pulsed (Icm):: 300 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 100A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 65ns/450ns

Test Condition:: 400V, 100A, 3.3Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC81T60SNCX1SA1 FAQ

1.How can I place an order for SIGC81T60SNCX1SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC81T60SNCX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC81T60SNCX1SA1 reliable?

The price and inventory of SIGC81T60SNCX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC81T60SNCX1SA1 is usually 5 days.

3.What payment methods are accepted for SIGC81T60SNCX1SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC81T60SNCX1SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC81T60SNCX1SA1?

SIGC81T60SNCX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC81T60SNCX1SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC81T60SNCX1SA1?

For technical support, including SIGC81T60SNCX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC81T60SNCX1SA1 requirements.

6.How does Aetrix verify that SIGC81T60SNCX1SA1 is sourced from the original manufacturer or authorized distributors?

All SIGC81T60SNCX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC81T60SNCX1SA1 meets industry standards.

7.What is the process for return or replacement of SIGC81T60SNCX1SA1?

All SIGC81T60SNCX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC81T60SNCX1SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC81T60SNCX1SA1 part is unused and in its original packaging.

Return procedure for SIGC81T60SNCX1SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…