Infineon Technologies SKB02N60ATMA1

Overview

SKB02N60ATMA1 from Infineon Technologies is a 600 V, 2 A NPT (Non-Punch-Through) IGBT with integrated soft-recovery anti-parallel Emitter Controlled Diode in PG-TO-263-3-2 package. It delivers 2.2 V V_CE(sat) at T_j = 150 °C and 2 A, 10 µs short-circuit withstand time at V_GE = 15 V, and 75% lower E_off versus prior generation - optimized for motor control in washing machines, fans, pumps, and vacuum cleaners.

For engineers reviewing the SKB02N60ATMA1 datasheet, SKB02N60ATMA1 pinout, SKB02N60ATMA1 application, or SKB02N60ATMA1 equivalent, this device is selected for high-efficiency, thermally stable 600 V inverter stages requiring low conduction loss, fast soft switching, and robust short-circuit ruggedness in compact SMD designs.

Technical Context

This IGBT employs NPT technology to ensure tight parameter distribution, temperature-stable V_CE(sat) up to 150 °C, and inherent parallel-switching capability without current imbalance. Its monolithic integration of an Emitter Controlled Diode enables very soft reverse recovery (t_rr = 130 ns typ. at 25 °C, Q_rr = 65 nC) with minimal voltage overshoot and reduced EMI.

The device operates with ±20 V gate rating, supports 15 V gate drive for reliable turn-on, and maintains safe SOA up to 12 A pulsed collector current under V_CE ≤ 600 V and T_j ≤ 150 °C. Thermal resistance R_thJC is 4.2 K/W for the IGBT and 7 K/W for the diode, enabling efficient heat transfer in PCB-mounted applications.

Key Specifications

Pinout & Package

SKB02N60ATMA1 uses the PG-TO-263-3-2 surface-mount package with isolated collector tab and standard 3-pin layout. The package features Pb-free lead plating and RoHS compliance, qualified per JEDEC J-STD-020 (MSL1).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-based inverter applications.

Compared with STGP20NC60WD and IRG4PH20KD, SKB02N60ATMA1 offers superior SMD integration, lower E_off, softer diode recovery, and smaller thermal resistance - making it optimal for space- and efficiency-critical 100–500 W appliance inverters where reflow assembly and low EMI are mandatory.

Availability

SKB02N60ATMA1 is available at Aetrix Electronics and suitable for washing machine inverter drives, fan speed control modules, and pump motor controllers requiring stable component supply, long-term lifecycle support, and RoHS-compliant SMD packaging.

Supply support for SKB02N60ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and consumer applications.

This device belongs to Infineon's StrongIRFET™ and TRENCHSTOP™ IGBT portfolio, designed specifically for high-efficiency, high-reliability motor control in white goods and small appliances with stringent thermal and EMI constraints.

FAQ

What is the maximum gate-emitter voltage rating for SKB02N60ATMA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with recommended operating range of –5 V to +15 V. Exceeding +15 V does not improve saturation but increases gate oxide stress risk; negative bias down to –5 V improves noise immunity during high dv/dt switching. Gate drive circuits must limit transient overshoot within this window.

Does SKB02N60ATMA1 require an external freewheeling diode?

No - it integrates a soft-recovery Emitter Controlled Diode monolithically. This diode provides bidirectional current path during inductive flyback, with t_rr = 130 ns (typ.) and Q_rr = 65 nC at 25 °C. External diodes are unnecessary unless system-level reliability demands redundancy or higher voltage rating.

How does short-circuit withstand time vary with junction temperature?

t_SC is specified at 10 µs for T_j ≤ 150 °C and V_GE = 15 V. As T_j rises above 125 °C, t_SC degrades nonlinearly; at 150 °C, it remains ≥10 µs per JEDEC qualification, but repeated events must be spaced >1 s apart with <1000 total occurrences over lifetime.

Is SKB02N60ATMA1 compatible with standard reflow soldering profiles?

Yes - it is qualified to JEDEC J-STD-020 MSL1 with peak reflow temperature of 260 °C for 30 seconds. The PG-TO-263-3-2 package supports lead-free SAC305 soldering; no pre-baking is required. Thermal pad soldering must follow Infineon's recommended stencil design (75% aperture ratio, 0.15 mm thickness) for optimal thermal performance.