Infineon Technologies SKB02N60E3266ATMA1

Overview

SKB02N60E3266ATMA1 from Infineon Technologies is a 600 V, 2 A NPT-type IGBT with integrated emitter-controlled diode in PG-TO-263-3-2 package, optimized for motor drive inverters in home appliances. It delivers 2.2 V V_CE(sat) at T_j = 150 °C, 10 µs short-circuit withstand time at V_GE = 15 V, and 75% lower E_off versus prior generation - enabling high-efficiency, compact inverter designs for washing machines and vacuum cleaners.

For engineers reviewing the SKB02N60E3266ATMA1 datasheet, SKB02N60E3266ATMA1 pinout, SKB02N60E3266ATMA1 application, or SKB02N60E3266ATMA1 equivalent, this device supports precise timing-critical switching in 20–100 kHz inverter topologies, requires gate resistor selection per Figure 10, and integrates soft-recovery diode functionality eliminating need for external freewheeling diode in half-bridge configurations.

Technical Context

This IGBT employs Non-Punch-Through (NPT) silicon technology, delivering tight parameter distribution and temperature-stable V_CE(sat) across –55 °C to +150 °C. Its monolithic emitter-controlled diode features 130 ns t_rr at 25 °C and 150 ns at 150 °C, with Q_rr increasing from 65 nC to 150 nC over that range - critical for minimizing voltage overshoot during commutation.

The device operates with ±20 V gate-emitter rating and exhibits 14–18 nC total gate charge (Q_gate) at V_CC = 480 V, enabling fast, controllable switching using standard 15 V gate drivers. Its 4.2 K/W IGBT junction-to-case thermal resistance supports 30 W power dissipation at T_C = 25 °C, validated under JEDEC J-STD-020 MSL1 reflow conditions.

Key Specifications

Pinout & Package

SKB02N60E3266ATMA1 uses the PG-TO-263-3-2 surface-mount package with exposed collector tab for low-inductance, high-current PCB mounting. The three terminals are arranged in G–C–E order (left to right when viewing top marking side).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-inverter applications.

Compared with STGP20NC60WD and IRG4PH20KD-EP, SKB02N60E3266ATMA1 offers superior thermal efficiency in SMD form factor, integrated soft diode functionality, and best-in-class E_off for sub-3 A home appliance inverters - making it optimal for cost- and space-sensitive consumer motor control.

Availability

SKB02N60E3266ATMA1 is available at Aetrix Electronics and suitable for washing machine inverters, vacuum cleaner motor modules, HVAC fan controllers, and compact pump speed regulators requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SKB02N60E3266ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's StrongIRFET™ and TRENCHSTOP™ IGBT portfolio, engineered specifically for energy-efficient, high-reliability motor drives in white goods - emphasizing ruggedness, thermal stability, and integrated functionality.

FAQ

What is the maximum gate-emitter voltage rating for SKB02N60E3266ATMA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with recommended operating range of –10 V to +15 V. Exceeding +15 V increases gate oxide stress and leakage; negative bias below –10 V risks latch-up. Gate drive circuits must include clamping diodes or Zener protection to stay within these limits during transients.

Does SKB02N60E3266ATMA1 require an external freewheeling diode?

No - it integrates a soft, fast-recovery emitter-controlled diode with 130 ns reverse recovery time at 25 °C and 150 ns at 150 °C. This eliminates the need for an external diode in half-bridge configurations, reducing component count, PCB area, and parasitic inductance in motor drive outputs.

How is short-circuit protection implemented with this IGBT?

Short-circuit withstand time is specified at 10 µs under V_GE = 15 V, V_CC ≤ 600 V, and T_j ≤ 150 °C. Protection requires fast current sensing (≤500 ns response) and gate voltage removal within that window. Up to 1000 such events are allowed if spaced >1 s apart, per JEDEC qualification.

What thermal interface considerations apply to the PG-TO-263-3-2 package?

The exposed collector tab must be soldered to ≥6 cm² of 70 µm copper on FR4 PCB for rated 30 W dissipation. Thermal vias under the tab improve heat transfer; minimum solder mask opening is required to ensure full metal contact. Junction-to-ambient R_thJA is 40 K/W under defined test conditions - actual value depends on board layout and airflow.