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Infineon Technologies SKB15N60

Part No.:
SKB15N60
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-263-3
Datasheet:
AetrixSKB15N60.pdf
Description:
IGBT, 31A, 600V, N-CHANNEL
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,000

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Product details

Overview

SKB15N60 from Infineon Technologies is a 600V fast N-channel IGBT in NPT technology with a soft, fast recovery anti-parallel Emitter Controlled Diode, designed for frequency inverters, motor-drive stages, switch-mode power supplies, UPS systems, appliance inverter drives, and industrial power conversion. The device is supplied in a PG-TO263-3-2 surface-mount power package for compact high-voltage switching layouts.

As part of Infineon's SKB15N60 fast IGBT family, SKB15N60 combines 600V collector-emitter voltage, 15A rated collector current, 2.3V listed VCE(sat), 10µs short-circuit withstand time, 139W power dissipation, and 150°C maximum junction temperature. For engineers reviewing the SKB15N60 datasheet, SKB15N60 pinout, SKB15N60 application, or SKB15N60 equivalent, this device is suitable for washing machine inverters, fan drives, pump drives, vacuum cleaner drives, industrial inverter power stages, and medium-power high-voltage switching circuits.

Technical Context

In power-conversion circuits, SKB15N60 operates as a voltage-controlled IGBT switch. The gate is driven like a MOSFET, while the main collector-emitter current path has IGBT saturation-voltage behavior. This means power-stage loss analysis should combine conduction loss from VCE(sat), switching loss from Eon and Eoff, diode recovery loss, thermal resistance, switching frequency, and actual gate-drive conditions.

The Infineon datasheet identifies SKB15N60 as a fast NPT IGBT with a soft, fast recovery anti-parallel Emitter Controlled Diode. It also notes 75% lower Eoff compared with the previous generation, 10µs short-circuit withstand time, and target use in frequency inverters for washing machines, fans, pumps, and vacuum cleaners. :contentReference[oaicite:0]{index=0}

The integrated anti-parallel diode is important in inverter and inductive-load circuits. During bridge-leg commutation, motor freewheeling, or current reversal, the diode provides a controlled current path and its recovery behavior affects switching loss, EMI, voltage overshoot, and thermal stress.

Key Specifications

Parameter Value and Actual Design Meaning
Device Type Fast N-channel IGBT with integrated soft, fast recovery anti-parallel Emitter Controlled Diode.
Technology NPT IGBT technology for 600V high-voltage switching applications.
Collector-Emitter Voltage 600V VCE rating for offline converter, inverter, DC bus, and high-voltage switching systems.
Collector Current 31A at TC = 25°C and 15A at TC = 100°C, defining thermally dependent current capability.
Pulsed Collector Current 62A pulsed collector current, limited by maximum junction temperature and safe operating area.
Turn-Off Safe Operating Area 62A at VCE ≤ 600V and Tj ≤ 150°C for high-voltage turn-off evaluation.
Diode Forward Current 31A at TC = 25°C and 15A at TC = 100°C for the integrated anti-parallel diode.
Diode Pulsed Current 62A pulsed diode current, limited by maximum junction temperature.
Gate-Emitter Voltage ±20V gate-emitter voltage rating; gate-driver design should include margin against ringing and overshoot.
Short-Circuit Withstand Time 10µs at VGE = 15V, VCC ≤ 600V, and Tj ≤ 150°C, with datasheet limits on event count and spacing.
Collector-Emitter Saturation Voltage 1.7V minimum, 2.0V typical, and 2.4V maximum at VGE = 15V, IC = 15A, and Tj = 25°C; 2.3V typical and 2.8V maximum at Tj = 150°C.
Diode Forward Voltage 1.4V typical at IF = 15A and Tj = 25°C; 1.25V typical at IF = 15A and Tj = 150°C.
Gate Threshold Voltage 3V minimum, 4V typical, and 5V maximum at IC = 400µA and VCE = VGE.
Input Capacitance 800pF typical and 960pF maximum at VCE = 25V, VGE = 0V, and f = 1MHz.
Output Capacitance 84pF typical and 101pF maximum at VCE = 25V, VGE = 0V, and f = 1MHz.
Reverse Transfer Capacitance 52pF typical and 62pF maximum at VCE = 25V, VGE = 0V, and f = 1MHz.
Total Gate Charge 76nC typical and 99nC maximum at VCC = 480V, IC = 15A, and VGE = 15V.
Turn-On Energy 0.30mJ typical at Tj = 25°C and 0.45mJ typical at Tj = 150°C under datasheet inductive-load test conditions.
Turn-Off Energy 0.27mJ typical at Tj = 25°C and 0.41mJ typical at Tj = 150°C under datasheet inductive-load test conditions.
Total Switching Energy 0.57mJ typical at Tj = 25°C and 0.86mJ typical at Tj = 150°C under RG = 21Ω test conditions.
Thermal Resistance 0.9K/W maximum IGBT junction-to-case thermal resistance and 1.7K/W maximum diode junction-to-case thermal resistance.
Power Dissipation 139W at TC = 25°C with suitable PCB copper and thermal mounting.
Operating Junction Temperature -55°C to +150°C operating and storage junction temperature range.
Package PG-TO263-3-2 / D2PAK surface-mount power package.
Compliance Pb-free lead plating and RoHS compliant.

Pinout & Package

The SKB15N60 pinout follows the PG-TO263-3-2 IGBT package format. The main terminals are gate, collector, and emitter, with the large tab electrically connected to the collector. This collector-tab structure must be considered for creepage, clearance, thermal copper, insulation, and switching-node layout.

For PCB implementation, the collector and emitter current paths should be short and low inductance. The gate resistor should be placed close to the gate terminal, and the gate-driver return should reference the emitter carefully to reduce ringing, false triggering, and switching instability. The package drawing in the datasheet shows the PG-TO263-3-2 mechanical and footprint dimensions for layout verification.

Pin / Function PCB Design and Circuit Role
Gate Voltage-control terminal driven by an external IGBT gate driver; gate resistance controls switching speed, overshoot, and EMI.
Collector Main high-voltage terminal connected to the DC bus, switching node, load path, or bridge-leg power node.
Emitter Main current return terminal and gate-drive reference point; layout strongly affects switching behavior.
Collector Tab Large D2PAK tab connected to the collector for electrical and thermal conduction.
Anti-Parallel Diode Path Provides reverse current path for freewheeling, inductive-load commutation, and inverter bridge operation.
PG-TO263-3-2 Package Surface-mount power package requiring suitable thermal copper, solder-joint quality, and high-voltage spacing.

Key Features

  • 600V fast N-channel IGBT for high-voltage switching applications.
  • NPT technology supports tight parameter distribution, high ruggedness, and parallel switching capability.
  • Soft, fast recovery anti-parallel Emitter Controlled Diode for inductive-load applications.
  • 75% lower Eoff compared with the previous generation according to the datasheet feature summary.
  • 10µs short-circuit withstand time under specified gate-drive and bus-voltage conditions.
  • 15A collector current at TC = 100°C and 31A at TC = 25°C.
  • Low conduction loss with 2.0V typical VCE(sat) at 25°C and IC = 15A.
  • Typical total switching energy of 0.57mJ at 25°C and 0.86mJ at 150°C under datasheet test conditions.
  • PG-TO263-3-2 surface-mount package supports compact inverter and converter layouts.
  • Pb-free lead plating and RoHS-compliant device family.

Applications

Appliance Frequency Inverters Motor Drives & Industrial Inverters

Use Scenario: Washing machines, fans, pumps, vacuum cleaners, and other appliance inverter drives.

Device Role: SKB15N60 switches high-voltage DC bus current and supports inductive current commutation through its integrated diode.

Use Value: Provides a 600V IGBT solution optimized for appliance frequency inverter power stages.

Use Scenario: Industrial motor drives, actuator stages, fan drives, pump drives, and inverter bridge circuits.

Device Role: Operates as a gate-controlled high-voltage switch in half-bridge and full-bridge power stages.

Use Value: Supports high-voltage switching with defined short-circuit ruggedness and diode recovery behavior.

Switch-Mode Power Supplies UPS, Welding & High-Energy Switching

Use Scenario: Offline SMPS, high-voltage DC-DC converters, auxiliary supplies, and industrial power modules.

Device Role: Acts as the main high-voltage switching device in converter power stages.

Use Value: Provides a balance of conduction loss, switching loss, and ruggedness for medium-power converters.

Use Scenario: UPS inverter stages, welding equipment, industrial converters, and repetitive high-energy switching circuits.

Device Role: Handles controlled gate-driven switching under thermal and protection constraints.

Use Value: Supports rugged 600V power-stage designs where thermal and fault performance are verified.

Equivalent & Alternatives

When evaluating SKB15N60 equivalent devices, engineers should compare collector-emitter voltage, collector current, VCE(sat), switching energy, short-circuit withstand time, diode recovery behavior, gate charge, package footprint, tab connection, thermal resistance, and product lifecycle status.

Alternative Part Technical Difference Application Difference Selection Advice
SKB15N60ATMA1 Orderable option associated with the SKB15N60 family and PG-TO263-3-2 package. Used where the BOM requires a specific Infineon ordering suffix for procurement and production. Choose SKB15N60 when the design is specified at the base-device level and verify the exact ordering suffix before procurement.
SKB15N60HSATMA1 High-speed HS variant with different switching-loss positioning and datasheet characteristics. Used where high-frequency switching behavior and HS-specific qualification are required. Choose SKB15N60 when the design is qualified around the standard SKB15N60 datasheet and loss model.
IKB15N60T Infineon 600V IGBT from a later TRENCHSTOP family with different conduction loss, switching energy, diode behavior, and package options. Used in updated inverter and converter designs requiring different loss tradeoffs. Choose SKB15N60 when the existing gate drive, PCB footprint, and production approval are based on the SKB15N60 device.
FGA15N60 600V class IGBT alternative from another manufacturer with different VCE(sat), switching energy, diode recovery, and package behavior. Used in similar medium-power inverter and SMPS applications after full electrical review. Choose SKB15N60 when Infineon device behavior, D2PAK footprint, and existing qualification must be maintained.

Compared with SKB15N60HSATMA1, SKB15N60 is the standard SKB15N60 device variant documented for appliance frequency inverter applications with soft fast recovery Emitter Controlled Diode behavior. SKB15N60 vs IKB15N60T selection depends on switching-loss target, VCE(sat), diode recovery behavior, gate-drive qualification, thermal design, package compatibility, and production sourcing requirements.

Quality

SKB15N60 should be sourced as original Infineon Technologies components through traceable and controlled supply channels. Quality verification procedures may include package inspection, top-mark validation, solderability testing, gate leakage testing, collector-emitter leakage testing, VCE(sat) verification, diode forward-voltage testing, switching-function checks, and incoming inspection according to power semiconductor production requirements.

Because the device is used in high-voltage switching applications, reliability depends on correct gate-drive voltage, gate resistance selection, desaturation or overcurrent protection, snubber and clamp design, thermal-path design, PCB creepage and clearance, collector-tab handling, diode recovery validation, and testing under worst-case load, temperature, switching frequency, and fault conditions. Traceable sourcing supports manufacturing quality and reduces counterfeit supply-chain risk for industrial and appliance IGBT production programs.

Availability

SKB15N60 available at Aetrix Electronics and suitable for frequency inverters, washing machine drives, fan drives, pump drives, vacuum cleaner drives, industrial inverters, switch-mode power supplies, UPS systems, welding equipment, and high-voltage power-conversion circuits requiring stable component supply and repeatable production support.

Supply support may include scheduled delivery planning, volume procurement support, legacy BOM sourcing, traceable sourcing management, and long-term availability support for OEM manufacturers, appliance-control developers, industrial-control builders, power-supply designers, repair programs, and electronics production operations.

For production deployment, confirming voltage rating, current rating, switching energy, short-circuit withstand requirement, diode recovery behavior, package style, thermal design, gate-drive compatibility, lifecycle status, and sourcing continuity helps reduce procurement risk and improve manufacturing stability.

Manufacturer

Infineon Technologies is a semiconductor manufacturer specializing in power semiconductors, microcontrollers, sensors, security ICs, automotive electronics, industrial power devices, MOSFETs, IGBTs, gate drivers, and power-management solutions for automotive, industrial, communication, consumer, and energy applications.

The Infineon IGBT portfolio focuses on high-voltage switching, inverter power stages, motor-drive efficiency, rugged gate-controlled power devices, integrated diode options, package flexibility, and reliable power conversion for appliance inverters, industrial drives, renewable energy, UPS systems, welding equipment, and switch-mode power supplies.

FAQ

What is SKB15N60 used for?

SKB15N60 is used for high-voltage switching in appliance frequency inverters, washing machine drives, fan drives, pump drives, vacuum cleaner drives, industrial inverters, switch-mode power supplies, UPS systems, and medium-power converter circuits.

Where can I find the SKB15N60 datasheet download?

The SKB15N60 datasheet is available from Infineon documentation and includes voltage and current ratings, VCE(sat), switching energy, diode recovery data, short-circuit withstand time, thermal ratings, characteristic curves, dynamic test definitions, and PG-TO263-3-2 package drawing.

What should be considered in SKB15N60 PCB design?

PCB implementation should prioritize low-inductance collector and emitter current paths, short gate routing, correct gate resistor placement, adequate thermal copper, proper creepage and clearance, controlled switching-node layout, snubber or clamp review, and careful gate-driver return routing.

Does SKB15N60 include an anti-parallel diode?

Yes. SKB15N60 includes a soft, fast recovery anti-parallel Emitter Controlled Diode, which supports inductive-load freewheeling and inverter bridge commutation.

What are common SKB15N60 equivalent solutions?

Common alternatives include SKB15N60ATMA1, SKB15N60HSATMA1, IKB15N60T, and selected 600V 15A-class IGBTs depending on switching frequency, VCE(sat), switching energy, diode recovery, package, thermal behavior, gate-drive compatibility, and sourcing continuity.

SKB15N60 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-263-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
600 V
Current - Collector Pulsed (Icm):
31 A
Vce(on) (Max) @ Vge, Ic:
62 A
Power - Max:
139 W
Switching Energy:
570µJ
Input Type:
Standard
Gate Charge:
76 nC
Td (on/off) @ 25°C:
32ns/234ns
Test Condition:
400V, 15A, 21Ohm, 15V
Reverse Recovery Time (trr):
279 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Industrial
Qualification:
Rohs, REACH
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3-2

SKB15N60 FAQ

1.How can I place an order for SKB15N60 through Aetrix?

Please submit a Request for Quotation (RFQ) for SKB15N60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SKB15N60 reliable?

The price and inventory of SKB15N60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SKB15N60 is usually 5 days.

3.What payment methods are accepted for SKB15N60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SKB15N60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SKB15N60?

SKB15N60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SKB15N60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SKB15N60?

For technical support, including SKB15N60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SKB15N60 requirements.

6.How does Aetrix verify that SKB15N60 is sourced from the original manufacturer or authorized distributors?

All SKB15N60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SKB15N60 meets industry standards.

7.What is the process for return or replacement of SKB15N60?

All SKB15N60 units undergo pre-shipment inspection (PSI). If there is an issue with SKB15N60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SKB15N60 part is unused and in its original packaging.

Return procedure for SKB15N60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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