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Infineon Technologies SKW07N120FKSA1

Part No.:
SKW07N120FKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixSKW07N120FKSA1.pdf
Description:
IGBT 1200V 16.5A 125W TO247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,049

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Product details

Overview

SKW07N120 from Infineon is a 1200 V, 8 A NPT-technology IGBT with integrated soft-fast anti-parallel emitter-controlled diode, optimized for motor controls, inverters, and SMPS. It delivers 0.7 mJ turn-off energy at Tj = 25 °C, 10 µs short-circuit withstand time at VGE = 15 V, and 1 K/W junction-to-case thermal resistance in PG-TO-247-3 package.

For engineers reviewing the SKW07N120 datasheet, SKW07N120 pinout, SKW07N120 application, or SKW07N120 equivalent, this device is selected for high-voltage switching where ruggedness, tight parameter distribution, and parallel-switching capability are required - especially in industrial motor drives operating up to 150 °C junction temperature.

Technical Context

This IGBT uses Non-Punch-Through (NPT) silicon technology, enabling high ruggedness, temperature-stable VCE(sat) (2.5–4.3 V across –40 °C to 150 °C), and consistent dynamic performance under repeated short-circuit stress (≤1000 events, >1 s interval). Its integrated emitter-controlled diode provides soft reverse recovery with trr = 60 ns (Tj = 25 °C) and Qrr = 0.3 µC.

The device supports gate drive with ±20 V rating and exhibits low input capacitance (Ciss = 720–870 pF) and moderate gate charge (Qgate = 70–90 nC), enabling efficient 10–100 kHz switching in hard-switched topologies. Thermal design is facilitated by separate IGBT and diode RthJC values (1.0 K/W and 2.5 K/W respectively).

Key Specifications

Parameter Value and Actual Design Meaning
VCE 1200 V - Maximum blocking voltage for use in 1000 V DC bus systems with margin.
IC 8 A continuous - Rated collector current at TC = 100 °C; supports 16.5 A pulsed operation.
Eoff 0.7 mJ at Tj = 25 °C - Enables lower switching losses in high-frequency inverter stages.
tSC 10 µs - Short-circuit withstand capability at VGE = 15 V, critical for fault-tolerant motor control designs.
RthJC (IGBT) 1.0 K/W - Low thermal resistance enables high-power density mounting on heatsinks.
VF (diode) 2.0 V at IF = 7 A, Tj = 25 °C - Forward voltage of integrated anti-parallel diode impacts conduction loss in freewheeling paths.
Qgate 70–90 nC - Gate charge determines required driver peak current and influences switching speed control.

Pinout & Package

SKW07N120 is housed in PG-TO-247-3 package - a through-hole, single-island power package with 3 terminals and industry-standard mechanical footprint. The case is electrically connected to the collector.

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main high-side power terminal Connected to DC bus positive; carries full load current and must be thermally coupled to heatsink via case.
Gate (G) Control input Receives ±20 V gate drive; requires low-inductance layout due to 70–90 nC charge and fast switching transitions.
Emitter (E) Power return and reference node Serves as common reference for both IGBT and integrated diode; carries bidirectional current in bridge configurations.

Key Features

Feature Design Value
NPT silicon technology Delivers tight parameter distribution and stable VCE(sat) over temperature - essential for parallel IGBT operation without current imbalance.
Integrated emitter-controlled diode Provides soft, fast recovery (trr ≤ 170 ns at Tj = 150 °C) reducing EMI and diode-induced voltage spikes in inductive loads.
10 µs short-circuit rating Enables robust protection schemes in motor drives without requiring ultra-fast desaturation detection circuitry.
JEDEC1-qualified Validated for industrial motor control and SMPS applications per reliability and stress-test standards.
Pb-free and RoHS-compliant plating Meets environmental compliance requirements for global OEM production without lead-based solder compatibility concerns.

Applications

Industrial Motor Drives Uninterruptible Power Supplies

Use Scenario: Three-phase inverter stage driving 3–7.5 kW AC induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: High-side switch in 6-pulse IGBT bridge; operates at 4–16 kHz with 50% duty cycle.

Use Value: 10 µs short-circuit withstand time allows safe shutdown during rotor lock or phase loss faults without destructive failure.

Use Scenario: DC–AC inverter output stage in online double-conversion UPS delivering clean 50/60 Hz sine wave.

IC Role / Device Role / Timing Role: Output switching device in H-bridge topology; handles 1200 V DC link and reactive load currents.

Use Value: Integrated soft-recovery diode minimizes reverse recovery oscillation, reducing filter component stress and audible noise.

Solar Inverters Induction Heating Systems

Use Scenario: String-level DC–AC conversion in central solar inverters with 1000 V DC input.

IC Role / Device Role / Timing Role: Main switching element in NPC or T-type three-level topology; switches at 10–20 kHz.

Use Value: NPT process ensures stable VCE(sat) across wide temperature range (–40 °C to +150 °C), improving efficiency tracking in outdoor environments.

Use Scenario: Resonant half-bridge in medium-frequency (20–50 kHz) induction heating generators for metal forging.

IC Role / Device Role / Timing Role: Hard-switched power switch handling high di/dt and repetitive short-circuit transients.

Use Value: Low tail current and 1 K/W RthJC enable high-duty-cycle operation with minimal thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXYS IXGN75N120B3 Higher IC (75 A), higher Eoff (1.2 mJ), TO-247-4L package with Kelvin emitter. Better suited for high-current parallel designs; requires Kelvin connection for optimal gate control. Select when system needs >15 A average current and gate drive stability under high di/dt is critical.
STMicroelectronics STGW40H120DF2 Lower VCE (1200 V), same IC (8 A), but higher VF (2.4 V) and longer trr (120 ns). Less suitable for high-frequency SMPS due to higher diode losses and slower recovery. Prefer only if cost sensitivity outweighs efficiency targets and thermal budget permits higher conduction loss.

Compared with IXGN75N120B3 and STGW40H120DF2, SKW07N120 offers the best balance of low Eoff, soft diode recovery, and proven ruggedness in motor control - making it ideal for space-constrained, thermally demanding 3–7.5 kW industrial inverters.

Availability

SKW07N120 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar inverters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for SKW07N120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The SKW07N120 belongs to Infineon's TRENCHSTOP™ IGBT family, designed specifically for high-efficiency, high-reliability industrial switching applications including motor control, UPS, and renewable energy conversion.

FAQ

What is the maximum gate-emitter voltage rating for SKW07N120?

The absolute maximum gate-emitter voltage is ±20 V DC, with recommended operating range of –10 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping or active regulation to prevent overshoot during fast switching transitions or inductive coupling.

Does SKW07N120 require an external freewheeling diode?

No - SKW07N120 integrates a soft, fast-recovery emitter-controlled diode in the same package. This anti-parallel diode is rated for 13 A DC at TC = 25 °C and supports bidirectional current flow in bridge configurations without external components.

How does junction temperature affect VCE(sat) performance?

VCE(sat) increases with junction temperature: from 2.5 V at Tj = 25 °C to 3.6 V at Tj = 150 °C (IC = 8 A, VGE = 15 V). This positive temperature coefficient supports inherent current sharing in parallel configurations and improves thermal stability.

Can SKW07N120 be used in parallel with identical units?

Yes - its NPT structure provides a positive VCE(sat) temperature coefficient and tight parameter distribution, enabling stable current sharing. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared heatsinking to minimize thermal gradients between devices.

SKW07N120FKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
16.5 A
Current - Collector Pulsed (Icm):
27 A
Vce(on) (Max) @ Vge, Ic:
3.6V @ 15V, 8A
Power - Max:
125 W
Switching Energy:
1mJ
Input Type:
Standard
Gate Charge:
70 nC
Td (on/off) @ 25°C:
27ns/440ns
Test Condition:
800V, 8A, 47Ohm, 15V
Reverse Recovery Time (trr):
60 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-1

SKW07N120FKSA1 FAQ

1.How can I place an order for SKW07N120FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SKW07N120FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SKW07N120FKSA1 reliable?

The price and inventory of SKW07N120FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SKW07N120FKSA1 is usually 5 days.

3.What payment methods are accepted for SKW07N120FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SKW07N120FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SKW07N120FKSA1?

SKW07N120FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SKW07N120FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SKW07N120FKSA1?

For technical support, including SKW07N120FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SKW07N120FKSA1 requirements.

6.How does Aetrix verify that SKW07N120FKSA1 is sourced from the original manufacturer or authorized distributors?

All SKW07N120FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SKW07N120FKSA1 meets industry standards.

7.What is the process for return or replacement of SKW07N120FKSA1?

All SKW07N120FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SKW07N120FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SKW07N120FKSA1 part is unused and in its original packaging.

Return procedure for SKW07N120FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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