Infineon Technologies SKW15N120FKSA1

Overview

SKW15N120FKSA1 from Infineon is a 1200 V, 15 A NPT-technology IGBT with integrated emitter-controlled anti-parallel diode, optimized for motor controls, inverters, and SMPS. It delivers 1.5 mJ turn-off energy at T_j = 25°C, 10 µs short-circuit withstand time at V_GE = 15 V, and operates up to 150°C junction temperature in PG-TO-247-3 package.

For engineers reviewing the SKW15N120FKSA1 datasheet, SKW15N120FKSA1 pinout, SKW15N120FKSA1 application, or SKW15N120FKSA1 equivalent, key selection criteria include its soft fast-recovery diode performance, tight parameter distribution across temperature, parallel-switching capability, and JEDEC1 qualification for industrial power conversion systems.

Technical Context

This IGBT employs Non-Punch-Through (NPT) silicon technology, enabling high ruggedness, temperature-stable V_CE(sat) (2.5–3.6 V), and consistent dynamic behavior from –55°C to +150°C. Its monolithic emitter-controlled diode exhibits low Q_rr (0.5 µC typ. at 25°C) and soft reverse recovery (t_rr = 65 ns).

The device supports robust short-circuit protection with 10 µs t_SC at V_GE = 15 V and V_CC ≥ 100 V, and features low gate charge (130–175 nC) and controlled switching transients (t_d(off) = 580–750 ns at 25°C) for predictable EMI management in hard-switched topologies.

Key Specifications

Pinout & Package

SKW15N120FKSA1 is housed in PG-TO-247-3 package with standard three-terminal configuration: Gate (G), Collector (C), and Emitter (E). The package features isolated mounting hole, 2.54 mm lead pitch, and RoHS-compliant Pb-free plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with IXGN15N120B3 and STGW15H120DF2, SKW15N120FKSA1 provides superior short-circuit ruggedness and monolithic integration-critical for industrial motor drives requiring single-device reliability and simplified thermal design.

Availability

SKW15N120FKSA1 is available at Aetrix Electronics and suitable for motor controls, photovoltaic inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for SKW15N120FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

SKW15N120FKSA1 belongs to Infineon's High Voltage IGBT portfolio, designed specifically for industrial power conversion systems demanding high blocking voltage, rugged short-circuit behavior, and integrated diode functionality in TO-247 packages.

FAQ

What is the maximum gate-emitter voltage rating for SKW15N120FKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and fast fall time. Gate resistor selection must limit dV/dt-induced displacement current during switching transitions.

Does SKW15N120FKSA1 support parallel operation?

Yes-its NPT structure provides positive temperature coefficient for V_CE(sat), enabling inherent current sharing among paralleled devices. Thermal coupling and matched gate drive impedance are required. Layout symmetry and individual gate resistors (≥10 Ω) are mandatory to prevent oscillation and ensure balanced dynamic current division.

How does the integrated diode differ from standard FRD counterparts?

The emitter-controlled diode uses shared emitter metallization with the IGBT, resulting in lower Q_rr (0.5 µC typ.), softer recovery (no current tail), and tighter trr distribution (65 ns at 25°C, 200 ns at 150°C). This reduces voltage overshoot and eliminates need for external snubbers in many 10–20 kHz inverter designs.

What thermal derating applies above 100°C case temperature?

At T_C = 110°C, rated I_C drops to ~12 A (Figure 4); at T_C = 125°C, it falls to ~9 A. Power dissipation must be limited to maintain T_j ≤ 150°C using R_thJC = 0.63 K/W and heatsink R_thCA. Derating curves in Figures 3 and 4 confirm linear reduction in both I_C and P_tot with rising T_C.