Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SKW20N60FKSA1

Name: SKW20N60FKSA1
Brand: Infineon Technologies
SKU: SKW20N60FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SKW20N60FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: SKW20N60FKSA1.pdf

Description:: IGBT 600V 40A 179W TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,364

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SKW20N60FKSA1 from Infineon is a 600V, 20A NPT (Non-Punch-Through) IGBT with integrated soft-recovery anti-parallel emitter-controlled diode in PG-TO-247-3 package. It delivers 2.4V V_CE(sat) at 20A/150°C, 10μs short-circuit withstand time at 15V V_GE, and 75% lower E_off versus prior generation-optimized for motor control inverters operating up to 150°C junction temperature.

For engineers reviewing the SKW20N60FKSA1 datasheet, SKW20N60FKSA1 pinout, SKW20N60FKSA1 application, or SKW20N60FKSA1 equivalent, key selection criteria include its tight parameter distribution, parallel-switching capability, low conduction + switching loss trade-off, and JEDEC-qualified ruggedness for industrial inverter designs.

Technical Context

This IGBT uses NPT technology to ensure high ruggedness, temperature-stable V_CE(sat) (1.7–2.9V across –55°C to +150°C), and uniform parameter spread-enabling reliable paralleling without current-sharing resistors. Its monolithic emitter-controlled diode provides soft, fast recovery (t_rr = 300 ns @ 25°C, 410 ns @ 150°C) with low Q_rr (490–1270 nC) and controlled dI_rr/dt (180–200 A/μs).

The device features gate charge of 100–130 nC, input capacitance C_iss = 1100–1320 pF, and thermal resistance R_thJC = 0.7 K/W for IGBT and 1.3 K/W for diode-supporting high-power density inverter modules where thermal management and dynamic loss predictability are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600 V - supports 400 V DC-link inverters with 50% voltage margin for transients
I_C continuous	20 A @ T_C = 100°C - enables compact heatsink design in 1–3 kW motor drives
V_CE(sat)	2.4 V @ I_C = 20A, T_j = 150°C - limits conduction loss to ≤48 W at full load
t_SC	10 μs @ V_GE = 15 V - allows robust short-circuit protection timing in gate driver ICs
E_off	0.33–0.43 mJ @ T_j = 25°C - contributes to 75% reduction vs. predecessor, lowering total switching loss
Q_rr	490–1270 nC - low reverse recovery charge reduces diode-induced turn-on loss in hard-switched topologies
R_thJC	0.7 K/W - enables direct mounting to heatsink with predictable junction-to-case thermal path

Pinout & Package

PG-TO-247-3 package: isolated metal tab (collector), vertical lead frame, RoHS-compliant Pb-free plating, qualified per J-STD-020/JESD-022.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to DC-link positive; carries full load current and short-circuit fault current
Gate (G)	Control input	Receives ±20 V rated drive signal; 100–130 nC gate charge dictates driver strength requirement
Emitter (E)	Power return and reference node	Serves as common source for IGBT and anti-parallel diode; requires low-inductance layout to minimize switching oscillation

Key Features

Feature	Design Value
NPT process technology	Delivers tight V_CE(sat) and β distribution (±5%) across production lots-critical for parallel operation without derating
Integrated emitter-controlled diode	Soft reverse recovery (t_F/t_S ratio >9) minimizes voltage overshoot and EMI during commutation
10 μs short-circuit rating	Enables use with standard 1–2 μs response gate drivers while maintaining safe failure mode under bus fault
JEDEC qualification	Validated for motor control and inverter applications per J-STD-020 moisture sensitivity and JESD-022 reliability standards
Low C_iss/C_oss ratio	C_iss = 1100–1320 pF, C_oss = 107–128 pF - improves Miller immunity and reduces gate drive loss

Applications

Industrial Motor Drives

Home Appliance Inverters

Use Scenario: 3-phase variable-frequency drives for HVAC compressors and pump systems operating at 4–16 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device in 2-level inverter leg; handles 20A RMS output with 10μs short-circuit tolerance.

Use Value: Low V_CE(sat) and reduced E_off cut conduction + switching losses by ≥22% vs. legacy 600V IGBTs, improving system efficiency to >97% at full load.

Use Scenario: Washing machine drum motor control with field-oriented control (FOC) and regenerative braking.

IC Role / Device Role / Timing Role: Half-bridge switch in inverter stage; operates with 150°C junction limit and soft diode recovery during PWM dead-time commutation.

Use Value: Integrated emitter-controlled diode eliminates need for external ultra-fast diode, reducing BOM count and PCB area by 35%.

Solar Microinverters

UPS Output Stages

Use Scenario: Single-phase transformerless microinverter converting 30–60 V DC to 230 V AC grid-tie output.

IC Role / Device Role / Timing Role: High-side switch in H-bridge topology; switches at 20–50 kHz with strict EMI constraints.

Use Value: Low Q_rr (490 nC) and soft recovery suppress dv/dt-induced shoot-through, enabling stable operation without snubbers.

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave with <3% THD under nonlinear loads.

IC Role / Device Role / Timing Role: Inverter-stage IGBT in 3-phase output bridge; sustains 150°C junction temperature during overload conditions.

Use Value: Tight parameter distribution ensures consistent current sharing across paralleled devices, supporting scalable 5–10 kVA modular designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP20NC60WD	600V/20A, trench-gate field-stop IGBT; V_CE(sat) = 2.1V @ 25°C but rises to 2.8V @ 150°C; no integrated diode	Requires external ultra-fast diode; higher V_CE(sat) drift with temperature increases conduction loss variance	Preferred when lower gate charge (75 nC) and faster turn-off are prioritized over integrated diode simplicity
IXYS IXGN20N60A3	600V/20A, NPT IGBT; V_CE(sat) = 2.3V @ 150°C; t_SC = 6 μs; includes soft-recovery diode but higher Q_rr (720 nC)	Shorter short-circuit withstand time limits protection window; higher Q_rr increases turn-on loss in hard-switched circuits	Selected where proven field reliability in telecom rectifiers outweighs need for extended t_SC margin

Compared with STGP20NC60WD and IXGN20N60A3, SKW20N60FKSA1 offers superior thermal stability of V_CE(sat), longer short-circuit tolerance, and lowest Q_rr-making it optimal for high-reliability, thermally constrained inverter legs where integrated diode simplification and loss consistency are design priorities.

Availability

SKW20N60FKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, home appliance inverters, and solar microinverters requiring stable component supply, long-lifecycle support, and JEDEC-qualified ruggedness.

Supply support for SKW20N60FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive, industrial, and renewable energy markets.

The SKW20N60FKSA1 belongs to Infineon's StrongIRFET™ and TRENCHSTOP™-adjacent NPT IGBT portfolio, designed specifically for cost-sensitive, high-efficiency 600V inverter applications demanding ruggedness, parallel operation, and integrated diode functionality.

FAQ

What is the maximum allowable gate-emitter voltage for SKW20N60FKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for active Miller clamping during turn-off to prevent spurious conduction.

Does SKW20N60FKSA1 require an external freewheeling diode?

No. The device integrates a soft-recovery emitter-controlled diode monolithically, eliminating the need for an external diode in standard inverter half-bridge configurations. This diode is rated for 20 A continuous forward current at T_C = 100°C and exhibits controlled reverse recovery with t_rr ≤ 410 ns at 150°C.

How does the short-circuit withstand time vary with junction temperature?

t_SC is specified at 10 μs for T_j ≤ 150°C and V_GE = 15 V. At T_j = 25°C, t_SC extends beyond 10 μs; however, the rated 10 μs value is conservative and validated across the full operating range. Exceeding 10 μs risks thermal runaway regardless of initial T_j.

Can SKW20N60FKSA1 be paralleled with other IGBTs without external current-sharing components?

Yes. Its NPT structure provides tight V_CE(sat) distribution (typ. ±5%) and positive temperature coefficient of V_CE(sat), enabling stable current sharing among paralleled units without emitter resistors-provided layout symmetry, matched gate drive, and thermal coupling are maintained.

SKW20N60FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 80 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 20A

Power - Max:: 179 W

Switching Energy:: 440µJ (on), 330µJ (off)

Input Type:: Standard

Gate Charge:: 100 nC

Td (on/off) @ 25°C:: 36ns/225ns

Test Condition:: 400V, 20A, 16Ohm, 15V

Reverse Recovery Time (trr):: 300 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

SKW20N60FKSA1 FAQ

1.How can I place an order for SKW20N60FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SKW20N60FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SKW20N60FKSA1 reliable?

The price and inventory of SKW20N60FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SKW20N60FKSA1 is usually 5 days.

3.What payment methods are accepted for SKW20N60FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SKW20N60FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SKW20N60FKSA1?

SKW20N60FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SKW20N60FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SKW20N60FKSA1?

For technical support, including SKW20N60FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SKW20N60FKSA1 requirements.

6.How does Aetrix verify that SKW20N60FKSA1 is sourced from the original manufacturer or authorized distributors?

All SKW20N60FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SKW20N60FKSA1 meets industry standards.

7.What is the process for return or replacement of SKW20N60FKSA1?

All SKW20N60FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SKW20N60FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SKW20N60FKSA1 part is unused and in its original packaging.

Return procedure for SKW20N60FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…