Infineon Technologies SKW20N60HSFKSA1

Overview

SKW20N60HS from Infineon is a 600 V, 20 A high-speed NPT-IGBT with anti-parallel diode in PG-TO-247-3 package, optimized for >30 kHz switching in industrial motor drives and induction heating. It delivers 240 µJ turn-off energy at 25°C, 10 µs short-circuit withstand time, and 2.8–4.0 V collector-emitter saturation voltage across –55°C to +150°C junction range.

For engineers reviewing the SKW20N60HS datasheet, SKW20N60HS pinout, SKW20N60HS application, or SKW20N60HS equivalent, key selection criteria include its NPT-based temperature-stable E_off, parallel-switching capability, tight parameter distribution, and validated 175°C time-limited junction operation under short-circuit stress.

Technical Context

This IGBT employs Non-Punch-Through (NPT) silicon technology to achieve moderate E_off increase with temperature and inherent ruggedness-enabling reliable operation up to 150°C continuous and 175°C transient. Its integrated fast-recovery anti-parallel diode exhibits 130–200 ns reverse recovery time and 730–1500 nC Q_rr, supporting hard-switched topologies.

The device features gate threshold voltage of 3–5 V, transconductance of 14 S, and low internal emitter inductance (13 nH), enabling precise gate control and reduced oscillation risk. Thermal resistance R_thJC is 0.7 K/W for the IGBT die and 1.7 K/W for the diode-critical for thermal design in high-power density inverters.

Key Specifications

Pinout & Package

PG-TO-247-3 package: isolated metal tab, through-hole mounting, 4.5 mm creepage/clearance, RoHS-compliant Pb-free plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IKW20N60T and FGA20N60UFD, SKW20N60HS offers superior high-frequency efficiency via lower E_off and tighter thermal stability-making it optimal for fixed-frequency hard-switched inverters above 30 kHz where diode Q_rr is manageable.

Availability

SKW20N60HS is available at Aetrix Electronics and suitable for industrial motor drives, induction heating systems, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for SKW20N60HS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and qualification to JEDEC standards.

SKW20N60HS belongs to Infineon's High Speed IGBT portfolio, designed specifically for high-efficiency, high-frequency industrial inverters where switching loss reduction and thermal robustness are primary system constraints.

FAQ

What is the maximum allowable gate-emitter voltage for SKW20N60HS?

The absolute maximum static gate-emitter voltage is ±20 V, with transient rating of ±30 V for pulses shorter than 1 µs and duty cycle below 5%. Exceeding ±20 V continuously risks gate oxide degradation; typical gate drive uses 0 V / +15 V logic levels with 16 Ω series resistance to limit peak current to ~6 A during turn-on.

Does SKW20N60HS support parallel operation?

Yes-its NPT structure provides positive temperature coefficient for V_CE(sat) and tight parameter distribution, enabling stable current sharing without active balancing. Parallel use requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling to ensure uniform junction temperature across devices.

How does the integrated diode compare to discrete ultrafast diodes?

The monolithic anti-parallel diode has 130–200 ns reverse recovery time and 730–1500 nC Q_rr, matching mid-tier discrete FREDs. Its key advantage is thermal coupling to the IGBT die-ensuring synchronized temperature tracking-but it lacks the ultra-low Q_rr (<300 nC) of premium discrete diodes used in ZVS designs.

What is the recommended gate resistor value for 40 kHz operation?

For 40 kHz hard-switched operation at T_j = 150°C and I_C = 20 A, a 2.2 Ω gate resistor minimizes total switching energy (0.7 mJ), while 16 Ω yields lower EMI but higher loss (0.96 mJ). Layout parasitics must be minimized: keep gate loop area <10 mm² and use Kelvin emitter connection to bypass internal 13 nH inductance.