Infineon Technologies SKW25N120FKSA1
- Part No.:
- SKW25N120FKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
SKW25N120FKSA1.pdf
- Description:
- IGBT 1200V 46A 313W TO247-3
- Quantity:
- Payment:

- Shipping:

Inventory:6,397
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Product details
Overview
SKW25N120FKSA1 from Infineon is a 1200 V, 25 A NPT-type IGBT with integrated emitter-controlled anti-parallel diode, optimized for motor controls, inverters, and SMPS. It delivers 2.9 mJ turn-off energy at Tj = 25°C, 10 µs short-circuit withstand time at VGE = 15 V, and junction temperature rating up to 150°C.
For engineers reviewing the SKW25N120FKSA1 datasheet, SKW25N120FKSA1 pinout, SKW25N120FKSA1 application, or SKW25N120FKSA1 equivalent, key selection criteria include its soft fast-recovery diode behavior, tight parameter distribution in NPT technology, thermal resistance (RthJC = 0.4 K/W), and gate charge (Qgate = 225–300 nC) for high-efficiency switching design.
Technical Context
This IGBT employs Non-Punch-Through (NPT) silicon technology, enabling high ruggedness, temperature-stable VCE(sat) and switching characteristics, and reliable parallel operation without current-sharing resistors. Its integrated emitter-controlled diode provides soft, fast recovery with trr = 90 ns (Tj = 25°C) and Qrr = 1.0 µC.
The device supports robust short-circuit protection with tSC = 10 µs at VGE = 15 V and VCE ≤ 1200 V, and operates across –55°C to +150°C junction range. Dynamic performance is characterized under standardized inductive load conditions (VCC = 800 V, IC = 25 A, RG = 22 Ω, Lσ = 180 nH).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 1200 V - Maximum blocking voltage for high-voltage DC bus applications |
| IC | 25 A continuous - Rated collector current at TC = 100°C for sustained conduction |
| Eoff | 2.9 mJ at Tj = 25°C - Confirmed turn-off loss for thermal modeling in 10–20 kHz inverters |
| tSC | 10 µs - Short-circuit safe operating time enabling robust fault handling without desaturation circuitry |
| RthJC | 0.4 K/W - Low junction-to-case thermal resistance supporting high-power density heatsink integration |
| Qgate | 225–300 nC - Gate charge range defining driver strength requirement (e.g., ≥2 A peak for <100 ns rise) |
| VF (diode) | 2.0 V typ. at IF = 25 A, Tj = 25°C - Forward voltage of integrated anti-parallel diode affecting freewheeling losses |
| Ciss | 2150–2600 pF - Input capacitance determining Miller effect and gate drive loop stability |
Pinout & Package
SKW25N120FKSA1 is housed in PG-TO-247-3 package - a through-hole, single-ended, 3-terminal power package with isolated mounting flange, rated for high thermal and mechanical reliability in industrial power modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main high-side power terminal | Connected to DC bus positive; carries full load current and withstands 1200 V blocking |
| Gate (G) | Control input | Receives ±20 V logic-level signal; requires 225–300 nC charge for full enhancement |
| Emitter (E) | Power return and reference node | Serves as common source for IGBT and anti-parallel diode; low-inductance path critical for EMI control |
Key Features
| Feature | Design Value |
|---|---|
| NPT silicon technology | Enables tight parameter spread (±5% VCE(sat)) and stable operation from –55°C to +150°C |
| Emitter-controlled anti-parallel diode | Soft reverse recovery (trr = 90 ns, Qrr = 1.0 µC) reduces voltage overshoot and snubber stress |
| Short-circuit ruggedness | 10 µs withstand time at VGE = 15 V allows use in drives without active desat detection |
| Pb-free RoHS-compliant plating | Meets J-STD-020 soldering standard (260°C, 10 s) and JEDEC1 qualification for industrial applications |
| Low RthJC (0.4 K/W) | Supports >300 W power dissipation at TC = 25°C, enabling compact heatsink designs |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Three-phase inverter stage in 5–15 kW AC servo drives operating at 8–16 kHz switching frequency. IC Role / Device Role: Main switching element in leg topology, paired with complementary IGBTs and gate drivers. Use Value: NPT ruggedness ensures reliable operation under repeated overload and regeneration; soft diode minimizes dv/dt-induced shoot-through risk. | Use Scenario: DC-AC inverter output stage in online double-conversion UPS systems with 1200 V DC link. IC Role / Device Role: High-voltage bridge switch handling bidirectional power flow during battery backup mode. Use Value: 1200 V rating enables direct interface with high-voltage battery stacks; 10 µs short-circuit tolerance simplifies protection architecture. |
| Solar Inverters | Induction Heating Systems |
Use Scenario: Two-level string inverter H-bridge stage converting 800–1000 V PV DC to 230/400 V AC at 12–20 kHz. IC Role / Device Role: High-side and low-side switch in phase-leg configuration with unipolar PWM. Use Value: Low Eoff (2.9 mJ) and soft diode reduce total losses and thermal stress at partial load conditions. | Use Scenario: Half-bridge resonant inverter in 3–10 kW induction cooktops operating at 20–50 kHz. IC Role / Device Role: Fast-switching power switch driving series-resonant tank with high di/dt demands. Use Value: Fast, soft diode recovery (trr = 90 ns) suppresses voltage spikes during zero-current switching transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN25N120B3 | Higher VCE(sat) (3.8 V typ. @ 25 A), lower Qgate (180 nC), no integrated diode | Requires external ultrafast diode; better suited for hard-switched ZVS topologies | Select when gate drive power budget is constrained and discrete diode layout is acceptable |
| STMicroelectronics STGW25H120DF2 | Similar VCE/IC, but uses Trench-Field-Stop tech; higher Eoff (3.4 mJ), faster trr (75 ns) | Optimized for higher-frequency (>30 kHz) SMPS; less rugged under short-circuit | Prefer for compact, high-frequency flyback or LLC converters where size outweighs fault tolerance |
Compared with IXGN25N120B3 and STGW25H120DF2, SKW25N120FKSA1 offers superior short-circuit ruggedness (10 µs vs. 3–5 µs) and integrated soft-recovery diode-critical for motor drives and UPS where fault immunity and layout simplicity are prioritized over minimal gate charge.
Availability
SKW25N120FKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SKW25N120FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
SKW25N120FKSA1 belongs to Infineon's High Voltage IGBT portfolio designed specifically for rugged, high-efficiency power conversion in motor drives, renewable energy inverters, and industrial SMPS.
FAQ
What is the maximum recommended gate resistor value for SKW25N120FKSA1 in a 15 kHz motor drive?
At 15 kHz switching frequency and Tj = 150°C, a gate resistor of 22 Ω is validated per datasheet Figure 10 and Figure 14. Increasing beyond 30 Ω raises switching losses significantly (Ets increases ~35% at RG = 40 Ω), risking thermal runaway. For EMI-sensitive layouts, RC snubbers on gate are preferred over excessive RG.
Does SKW25N120FKSA1 require negative gate voltage for reliable turn-off?
No. The device is fully specified for 0 V turn-off (VGE = 0 V) and does not require negative bias. Its VGE(th) range (3–5 V) and low IGE(S) (<100 nA) ensure clean turn-off with zero-volt gate drive, simplifying isolated driver design in cost-sensitive industrial inverters.
Can SKW25N120FKSA1 be paralleled with other units without external emitter resistors?
Yes. Its NPT structure provides positive temperature coefficient for VCE(sat), enabling inherent current sharing. Datasheet confirms parallel switching capability without ballasting resistors-validated under matched gate drive and symmetrical layout per Application Note AN2015-05.
What is the peak diode reverse recovery current (Irrm) under worst-case conditions?
At Tj = 150°C, VR = 800 V, IF = 25 A, and diF/dt = 750 A/µs, Irrm reaches 32 A (datasheet Table, page 3). This value defines snubber sizing and must be accounted for in freewheeling loop inductance calculations to limit voltage overshoot below 1300 V.
SKW25N120FKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 46 A
- Current - Collector Pulsed (Icm):
- 84 A
- Vce(on) (Max) @ Vge, Ic:
- 3.6V @ 15V, 25A
- Power - Max:
- 313 W
- Switching Energy:
- 3.7mJ
- Input Type:
- Standard
- Gate Charge:
- 225 nC
- Td (on/off) @ 25°C:
- 45ns/730ns
- Test Condition:
- 800V, 25A, 22Ohm, 15V
- Reverse Recovery Time (trr):
- 90 ns
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-3-1
SKW25N120FKSA1 FAQ
1.How can I place an order for SKW25N120FKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SKW25N120FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SKW25N120FKSA1 reliable?
The price and inventory of SKW25N120FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SKW25N120FKSA1 is usually 5 days.
3.What payment methods are accepted for SKW25N120FKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SKW25N120FKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SKW25N120FKSA1?
SKW25N120FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SKW25N120FKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SKW25N120FKSA1?
For technical support, including SKW25N120FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SKW25N120FKSA1 requirements.
6.How does Aetrix verify that SKW25N120FKSA1 is sourced from the original manufacturer or authorized distributors?
All SKW25N120FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SKW25N120FKSA1 meets industry standards.
7.What is the process for return or replacement of SKW25N120FKSA1?
All SKW25N120FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SKW25N120FKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SKW25N120FKSA1 part is unused and in its original packaging.
Return procedure for SKW25N120FKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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