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Infineon Technologies SKW30N60HSFKSA1

Part No.:
SKW30N60HSFKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixSKW30N60HSFKSA1.pdf
Description:
IGBT 600V 41A 250W TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,073

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Product details

Overview

SKW30N60HS from Infineon is a 600V, 30A high-speed NPT-IGBT with 480 µJ turn-off energy (Eoff), 10 µs short-circuit withstand time, and rated for >30 kHz switching in motor drives and induction heating. It features parallel-switching capability, tight parameter distribution, and operates up to 150°C junction temperature.

For engineers reviewing the SKW30N60HS datasheet, SKW30N60HS pinout, SKW30N60HS application, or SKW30N60HS equivalent, key selection criteria include Eoff vs. temperature stability, diode reverse recovery charge (Qrr = 0.82–2.0 µC), gate charge (QG = 141 nC), and thermal resistance (RthJC = 0.5 K/W).

Technical Context

This IGBT uses Non-Punch-Through (NPT) silicon technology to deliver stable VCE(sat) across temperature (2.8–4.0 V at 30 A) and moderate Eoff increase with Tj, enabling reliable operation in hard-switched PFC and resonant converters. Its integrated anti-parallel diode has soft recovery (trr = 125–190 ns) and low peak reverse recovery current (Irrm = 17–24 A).

The device supports gate drive with ±20 V static / ±30 V transient voltage, exhibits low internal emitter inductance (LE = 13 nH), and maintains SOA integrity up to 112 A pulsed current under VCE ≤ 600 V and Tj ≤ 150°C.

Key Specifications

ParameterValue and Actual Design Meaning
VCE600 V - Maximum blocking voltage for 600V DC-link applications like industrial inverters
IC (DC, TC=100°C)30 A - Continuous current rating at elevated case temperature, defining thermal design margin
Eoff480 µJ @ Tj=25°C - Low switching loss enables high-frequency operation above 30 kHz
tSC10 µs - Short-circuit withstand time at VGE=15 V, enabling robust protection in fault conditions
RthJC0.5 K/W - Junction-to-case thermal resistance, critical for heatsink sizing in high-power modules
QG141 nC - Total gate charge determines required gate driver peak current and power loss
VF (diode)1.55–2.05 V @ 30 A - Forward voltage of integrated anti-parallel diode impacts conduction loss in freewheeling

Pinout & Package

SKW30N60HS is housed in PG-TO-247-3 package - a through-hole, isolated-tab power package with 3 terminals and industry-standard mounting footprint.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main high-side power output terminalConnected to DC-link positive; carries full load current and withstands 600 V blocking
Gate (G)Control input for IGBT channelRequires 15 V turn-on; sensitive to transients (±30 V max); drives 141 nC charge
Emitter (E)Power return and reference nodeServes as common source for IGBT and diode; low-inductance path (LE = 13 nH) reduces switching overshoot

Key Features

FeatureDesign Value
NPT technologyEnables parallel operation without current imbalance due to positive temperature coefficient of VCE(sat)
30% lower Eoff vs. prior genReduces total switching loss in 30–100 kHz range, improving efficiency in high-frequency inverters
Soft-recovery anti-parallel diodeQrr = 0.82 µC (25°C), trr = 125 ns - minimizes voltage spikes and EMI in inductive switching
JEDEC J-STD-020 qualifiedValidated for reflow soldering up to 260°C (10 s), ensuring reliability in automated PCB assembly
Pb-free & RoHS compliantMeets environmental compliance requirements for global industrial and consumer equipment markets

Applications

Motor Drive InverterInduction Heating

Use Scenario: 3-phase inverter stage driving 3–7.5 kW AC induction motors in HVAC and industrial pumps.

IC Role / Device Role / Timing Role: High-side IGBT switch with integrated diode providing controlled PWM switching and freewheeling path.

Use Value: 10 µs short-circuit rating enables fast hardware protection; 30% lower Eoff reduces heatsink size by ~22% at 40 kHz.

Use Scenario: Resonant half-bridge in 20–50 kHz domestic and commercial induction cooktops.

IC Role / Device Role / Timing Role: Fast-switching IGBT with soft-recovery diode handling zero-voltage switching transitions.

Use Value: Qrr = 0.82 µC and trr = 125 ns minimize diode-induced voltage overshoot, reducing snubber losses by ~18%.

Industrial UPSHigh-Frequency PFC

Use Scenario: Output inverter stage in 5–15 kVA online UPS systems requiring high reliability and overload tolerance.

IC Role / Device Role / Timing Role: Main switching device in IGBT-based voltage-source inverter with active clamping support.

Use Value: Tight parameter distribution (±5% VCE(sat)) ensures balanced current sharing in paralleled configurations.

Use Scenario: Boost switch in active PFC stages operating at 65–100 kHz for server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: High-efficiency, high-dV/dt tolerant switch managing continuous conduction mode (CCM) operation.

Use Value: RthJC = 0.5 K/W and Tj(max) = 150°C allow sustained 30 A operation with <85°C case temperature under forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW30N60TTrench-stop IGBT; lower VCE(sat) (2.1 V typ.), higher Eoff (620 µJ), no integrated diodeRequires external ultrafast diode; better for low-conduction-loss priority designsPrefer when minimizing conduction loss dominates over switching loss and board space
FGA30N60UFDUltrafast diode version; higher Qrr (2.5 µC), slower trr (220 ns), same VCE/IC ratingsHigher diode recovery loss; suited for lower-frequency (<20 kHz) hard-switched applicationsChoose only if legacy layout compatibility or cost sensitivity outweighs EMI/efficiency trade-offs

Compared with IKW30N60T and FGA30N60UFD, SKW30N60HS delivers optimal balance of low Eoff, integrated soft-recovery diode, and parallel-switching readiness-making it preferred for new 30–60 kHz inverter designs where thermal management and EMI control are critical.

Availability

SKW30N60HS is available at Aetrix Electronics and suitable for motor drive inverters, induction heating systems, industrial UPS units, and high-frequency PFC circuits requiring stable component supply and long-term manufacturing continuity.

Supply support for SKW30N60HS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in IGBT, SiC, and GaN power devices.

The SKW30N60HS belongs to Infineon's High Speed IGBT portfolio designed specifically for >30 kHz hard-switched and resonant topologies in industrial and consumer power conversion.

FAQ

What is the maximum recommended gate resistor for SKW30N60HS in a 40 kHz motor drive?

A 11 Ω gate resistor is validated in the datasheet for 400 V, 30 A, 40 kHz operation (Fig. 14). At this value, turn-off delay is 250 ns and Eoff remains at 0.55 mJ. Lower values (e.g., 1.8 Ω) reduce delay but increase EMI risk and dV/dt stress on gate oxide.

Does SKW30N60HS support paralleling without current-sharing resistors?

Yes - its NPT structure provides a positive temperature coefficient for VCE(sat), enabling inherent current balancing across paralleled devices. Layout symmetry and matched gate drive paths are still required, but external emitter resistors are not necessary for thermal stability.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At TC = 100°C, the DC collector current limit is 30 A (Fig. 4), and the pulsed SOA extends to 112 A for pulse widths < 100 µs (Fig. 2). For 10 µs short-circuit events, VCE must remain ≤ 600 V and Tj ≤ 150°C per JEDEC qualification.

Can SKW30N60HS replace SKW30N60 in an existing design?

Yes - SKW30N60HS is a direct drop-in replacement for SKW30N60 with identical pinout, package, and voltage/current ratings. It improves Eoff by 30%, reduces thermal stress, and maintains the same 10 µs short-circuit rating, allowing immediate efficiency gains without layout changes.

SKW30N60HSFKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
41 A
Current - Collector Pulsed (Icm):
112 A
Vce(on) (Max) @ Vge, Ic:
3.15V @ 15V, 30A
Power - Max:
250 W
Switching Energy:
1.15mJ
Input Type:
Standard
Gate Charge:
141 nC
Td (on/off) @ 25°C:
20ns/250ns
Test Condition:
400V, 30A, 11Ohm, 15V
Reverse Recovery Time (trr):
125 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-1

SKW30N60HSFKSA1 FAQ

1.How can I place an order for SKW30N60HSFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SKW30N60HSFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SKW30N60HSFKSA1 reliable?

The price and inventory of SKW30N60HSFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SKW30N60HSFKSA1 is usually 5 days.

3.What payment methods are accepted for SKW30N60HSFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SKW30N60HSFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SKW30N60HSFKSA1?

SKW30N60HSFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SKW30N60HSFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SKW30N60HSFKSA1?

For technical support, including SKW30N60HSFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SKW30N60HSFKSA1 requirements.

6.How does Aetrix verify that SKW30N60HSFKSA1 is sourced from the original manufacturer or authorized distributors?

All SKW30N60HSFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SKW30N60HSFKSA1 meets industry standards.

7.What is the process for return or replacement of SKW30N60HSFKSA1?

All SKW30N60HSFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SKW30N60HSFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SKW30N60HSFKSA1 part is unused and in its original packaging.

Return procedure for SKW30N60HSFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SKW30N60HSFKSA1 Tags

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