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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB10H60DF

Name: STGB10H60DF
Brand: STMicroelectronics
SKU: STGB10H60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB10H60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGB10H60DF.pdf

Description:: IGBT TRENCH FS 600V 20A TO263

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Product details

Overview

STGB10H60DF from STMicroelectronics is a 600 V, 10 A trench-gate field-stop IGBT with integrated ultrafast soft-recovery antiparallel diode in D²PAK (TO-263) package. It delivers 1.95 V typical V_CE(sat) at 10 A/15 V, 107 ns typ. diode trr, and 5 μs short-circuit withstand time-optimized for high-frequency PFC and motor control inverters operating up to 100 kHz.

For engineers reviewing the STGB10H60DF datasheet, STGB10H60DF pinout, STGB10H60DF application, or STGB10H60DF equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, 1.3 °C/W IGBT junction-to-case thermal resistance, and tight parameter distribution enabling reliable operation in industrial UPS and servo drives.

Technical Context

This H-series IGBT employs a proprietary trench gate field-stop structure to balance conduction and switching losses-achieving 83 μJ typ. E_on and 140 μJ typ. E_off at 400 V/10 A/175 °C. Its integrated diode features 1.7 V typ. V_F at 10 A and 120 nC Q_rr, enabling low-loss commutation in hard-switched topologies.

The device supports gate drive with ±20 V V_GE rating and exhibits 1300 pF C_ies, 60 pF C_oes, and 30 pF C_res at 25 V, enabling predictable turn-on/turn-off timing with 19.5 ns t_d(on) and 103 ns t_d(off) using 10 Ω gate resistor.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 600 V without breakdown, suitable for 400 V AC input PFC stages.
I_C (T_C = 100 °C)	10 A - Continuous collector current derated for 100 °C case temperature, defining usable output power in thermally constrained designs.
V_CE(sat) (T_J = 175 °C)	1.70 V - Low saturation voltage at max junction temperature reduces conduction loss and improves efficiency in high-temp operation.
t_sc	3–5 μs - Short-circuit withstand capability enables robust protection in motor drive fault conditions without external desaturation circuitry.
R_thJC (IGBT)	1.3 °C/W - Low junction-to-case thermal resistance allows effective heat transfer to heatsink, supporting higher power density layouts.
trr (diode)	107 ns - Ultrafast soft recovery minimizes switching loss and voltage overshoot during diode commutation in bridge legs.
Q_g	57 nC - Total gate charge determines required gate driver peak current and influences switching speed vs. EMI trade-off.

Pinout & Package

D²PAK (TO-263) package with isolated tab (pin 3), standard 3-pin layout: Pin 1 = Gate, Pin 2 = Collector (tab-connected), Pin 3 = Emitter. Tab is electrically connected to collector for low-inductance mounting and direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring ±20 V rating; 57 nC total charge necessitates ≥2 A peak gate driver capability for fast switching.
Pin 2	Collector	Main power terminal tied to internal die collector and metal tab; must be electrically isolated from heatsink unless system design permits common-collector configuration.
Pin 3	Emitter	Power return path and reference for gate drive; low-inductance PCB layout critical to minimize shoot-through risk during hard switching.

Key Features

Feature	Design Value
Trench gate field-stop structure	Enables simultaneous optimization of V_CE(sat) and switching energy-reducing total loss by >15% vs. planar IGBTs at 20 kHz.
Positive V_CE(sat) temperature coefficient	Ensures current sharing stability when paralleling multiple devices, eliminating need for emitter resistors in multi-chip modules.
Ultrafast soft-recovery antiparallel diode	107 ns trr with softness factor >1.2 suppresses voltage ringing and EMI during freewheeling, reducing snubber component count.
Tight parameter distribution	±5% V_CE(sat) and ±8% t_d(off) tolerance across production lots simplifies thermal and timing margining in volume production.
Short-circuit rated	Withstands 3–5 μs at V_CC ≤ 360 V without destruction, enabling deterministic overcurrent protection in servo and BLDC controllers.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 1–3 kW servo drives with 16 kHz PWM and active cooling.

IC Role / Device Role / Timing Role: Main switching device in low-side leg; handles bidirectional current with integrated diode conducting freewheeling current during dead-time.

Use Value: 1.3 °C/W R_thJC and 1.7 V V_CE(sat) at 175 °C enable 20% higher continuous output current vs. legacy 600 V IGBTs under same thermal constraints.

Use Scenario: Boost PFC front-end in online double-conversion UPS delivering 2 kVA with THD < 3%.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; operates at 50–100 kHz with zero-voltage turn-on assisted by diode soft recovery.

Use Value: 107 ns trr and 120 nC Q_rr reduce diode reverse recovery loss by 40% compared to standard FRDs, improving full-load efficiency by 0.8%.

Photovoltaic Inverters

Induction Heating Systems

Use Scenario: DC-AC H-bridge in string inverters converting 600–900 V DC to 230 V AC at 18 kHz switching frequency.

IC Role / Device Role / Timing Role: High-voltage switching element handling 10 A RMS output current; integrated diode manages reactive current during modulation transitions.

Use Value: 5 μs short-circuit rating allows elimination of fast desaturation detection circuitry, reducing BOM cost and PCB area by 12%.

Use Scenario: Half-bridge resonant inverter in 5 kW induction cooktop operating at 20–50 kHz with variable load coupling.

IC Role / Device Role / Timing Role: Switching device managing high di/dt (>1000 A/μs) during zero-current switching transitions; diode recovers softly under high di/dt stress.

Use Value: 1170 A/μs (di/dt)_on and soft recovery prevent voltage spikes >1.2×V_CES, enabling use of 600 V bus without snubbers or overvoltage derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGF10H60DF	TO-220FP package; higher R_thJC = 5 °C/W (IGBT); same electrical specs.	Lower power density due to reduced thermal performance; suited for lower ambient or forced-air-cooled systems.	Select when mechanical compatibility with TO-220FP footprint is required and thermal budget allows 50% lower continuous current vs. D²PAK.
IXYS IXGH10N60B3	Planar gate structure; 2.2 V V_CE(sat) typ.; no integrated diode; 1.5 μs t_sc.	Requires external ultrafast diode; higher conduction loss; less robust under short-circuit conditions.	Choose only if legacy board layout mandates TO-247 and system-level diode selection justifies added complexity and efficiency penalty.

Compared with STGF10H60DF, STGB10H60DF offers 3.8× better thermal resistance enabling 2× higher continuous current in same heatsink; versus IXGH10N60B3, it eliminates diode matching effort and improves short-circuit ruggedness by >200%, critical for unattended industrial equipment.

Availability

STGB10H60DF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), and photovoltaic inverters requiring stable component supply and long-term manufacturing continuity.

Supply support for STGB10H60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGB10H60DF belongs to the H-series IGBT portfolio engineered specifically for high-efficiency, high-frequency power conversion-targeting PFC, motor control, and renewable energy inverters where conduction-switching loss trade-offs dominate system efficiency.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 175 °C junction temperature?

A 10 Ω gate resistor is validated in the datasheet for t_d(off) = 104 ns and E_off = 214 μJ at T_J = 175 °C. Increasing beyond 15 Ω raises E_off nonlinearly and risks incomplete turn-off under high di/dt; ST recommends 8–12 Ω for optimal loss/EMI balance in industrial motor drives.

Can STGB10H60DF be paralleled without emitter ballast resistors?

Yes-its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution (±5%) ensure inherent current sharing. Parallel operation has been validated with ≤3 devices on shared heatsink using matched gate drive traces; no emitter resistors are required per ST AN4722 guidelines.

Is the D²PAK tab electrically isolated from the package leads?

No-the metal tab is internally connected to the collector (Pin 2). Electrical isolation from the heatsink is mandatory unless the system design intentionally references the heatsink to the high-side DC bus; creepage/clearance must meet IEC 60950-1 requirements for 2.5 kV_RMS insulation rating.

How does the integrated diode's soft recovery improve EMI performance?

The diode's softness factor >1.2 limits di/dt during reverse recovery, suppressing voltage overshoot and high-frequency ringing. Measured EMI reduction is 8–10 dB in 30–100 MHz band versus standard FRDs-enabling smaller Y-capacitors and simplified filter design in Class B EMC-compliant UPS systems.

STGB10H60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 20 A

Current - Collector Pulsed (Icm):: 40 A

Vce(on) (Max) @ Vge, Ic:: 1.95V @ 15V, 10A

Power - Max:: 115 W

Switching Energy:: 83µJ (on), 140µJ (off)

Input Type:: Standard

Gate Charge:: 57 nC

Td (on/off) @ 25°C:: 19.5ns/103ns

Test Condition:: 400V, 10A, 10Ohm, 15V

Reverse Recovery Time (trr):: 107 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STGB10H60DF FAQ

1.How can I place an order for STGB10H60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB10H60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB10H60DF reliable?

The price and inventory of STGB10H60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB10H60DF is usually 5 days.

3.What payment methods are accepted for STGB10H60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB10H60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB10H60DF?

STGB10H60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB10H60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB10H60DF?

For technical support, including STGB10H60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB10H60DF requirements.

6.How does Aetrix verify that STGB10H60DF is sourced from the original manufacturer or authorized distributors?

All STGB10H60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB10H60DF meets industry standards.

7.What is the process for return or replacement of STGB10H60DF?

All STGB10H60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGB10H60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB10H60DF part is unused and in its original packaging.

Return procedure for STGB10H60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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