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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB10NB60ST4

Name: STGB10NB60ST4
Brand: STMicroelectronics
SKU: STGB10NB60ST4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB10NB60ST4

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGB10NB60ST4.pdf

Description:: IGBT 600V 29A 80W D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:2,167

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Product details

Overview

STGB10NB60ST4 from STMicroelectronics is a 16 A, 600 V low-saturation-voltage IGBT fabricated using PowerMESH™ process, optimized for low-frequency switching (≤1 kHz) in motor drives, static relays, and light dimmers. It delivers V_CE(sat) = 1.35 V at I_C = 10 A and T_j = 25 °C, features R_thj-case = 1.56 °C/W, and is housed in a surface-mount D²PAK (TO-263) package with integrated thermal pad.

For engineers reviewing the STGB10NB60ST4 datasheet, STGB10NB60ST4 pinout, STGB10NB60ST4 application, or STGB10NB60ST4 equivalent, key selection criteria include its 600 V blocking capability, 16 A continuous current rating at T_C = 100 °C, low conduction loss profile, gate charge of 33 nC, and suitability for industrial AC load control where thermal efficiency and ruggedness are critical.

Technical Context

This IGBT employs a vertical N-channel structure with field-stop technology and optimized carrier lifetime control to achieve low V_CE(sat) while maintaining robust short-circuit withstand time. Its gate threshold voltage (V_GE(th)) ranges from 2.5 V to 5 V, enabling reliable turn-on with standard 15 V gate drive.

The device operates within –55 °C to 150 °C junction temperature range and supports pulsed collector currents up to 80 A. Its dynamic performance includes t_d(off) = 2.2 µs and E_off = 5 mJ (T_j = 25 °C) under V_CC = 480 V, I_C = 10 A, R_G = 1 kΩ conditions - characteristics validated for inductive load switching in motor control inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage before avalanche; enables use in 400 VAC line-fed systems with safety margin.
I_C (T_C = 100 °C)	16 A - Continuous collector current derated for heatsink-limited thermal operation in enclosed industrial enclosures.
V_CE(sat)	1.35 V @ I_C = 10 A, V_GE = 15 V, T_j = 25 °C - Low conduction loss reduces power dissipation and heatsink size requirements.
R_thj-case	1.56 °C/W - Thermal resistance from junction to case; determines minimum heatsink thermal resistance needed for safe operation.
Q_g	33 nC - Total gate charge; defines required gate driver peak current and influences switching speed trade-offs.
E_off	5 mJ @ V_CC = 480 V, I_C = 10 A, T_j = 25 °C - Turn-off energy directly impacts snubber design and driver power loss in hard-switched topologies.
C_ies	610 pF @ V_CE = 25 V - Input capacitance affects gate drive loop stability and Miller effect during high dv/dt transitions.

Pinout & Package

STGB10NB60ST4 is packaged in D²PAK (TO-263), a surface-mount power package with exposed thermal pad on the underside. The case serves as the collector terminal, enabling direct thermal coupling to PCB copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives gate drive signal; requires ≥15 V for full enhancement and <2.5 V for guaranteed turn-off.
2 (Emitter)	Reference node	Common return path for gate drive and load current; must be low-inductance layout to suppress ringing.
3 (Collector / Tab)	High-side power output	Electrically and thermally connected to exposed metal tab; must be soldered to large copper area for thermal management.

Key Features

Feature	Design Value
PowerMESH™ process	Enables V_CE(sat) ≤1.35 V at 10 A while maintaining 600 V breakdown - reduces conduction losses by ~25% vs. legacy planar IGBTs.
Low thermal resistance	R_thj-case = 1.56 °C/W allows 80 W dissipation at ΔT = 125 °C - supports compact board-level thermal design without forced air.
High ruggedness	Rated for 20 A latching current (I_CL) at T_j = 150 °C - ensures reliable operation during transient overloads in motor stall conditions.
ECOPACK® compliant	Meets RoHS and halogen-free requirements per ST's environmental grade definitions - suitable for global industrial product certifications.

Applications

Motor Drive Inverter

Light Dimmer Module

Use Scenario: Single-phase AC induction motor control in HVAC blowers and pump drivers operating at 50/60 Hz.

IC Role / Device Role / Timing Role: High-side switch in half-bridge topology; commutates 400 VAC line voltage with 10–16 A RMS load current.

Use Value: Low V_CE(sat) minimizes heat generation during continuous conduction mode, extending system MTBF in sealed enclosures.

Use Scenario: Leading-edge phase-cut dimming for incandescent/halogen lamps in residential and commercial lighting.

IC Role / Device Role / Timing Role: Main switching element triggered at zero-crossing; handles repetitive 60 Hz AC line transients up to 600 V peak.

Use Value: High V_CES and robust SOA allow reliable operation without snubbers in cost-sensitive dimmer PCBs.

Static Relay Replacement

Industrial Heater Control

Use Scenario: Solid-state replacement for electromechanical relays in PLC output modules controlling 24–240 VAC loads.

IC Role / Device Role / Timing Role: Isolated load switch activated via optocoupler-driven gate; conducts continuously for seconds to minutes.

Use Value: 16 A continuous rating at 100 °C case temperature enables direct mounting on DIN-rail mounted PCBs without auxiliary cooling.

Use Scenario: Power stage in PID-controlled resistive heating elements for ovens, dryers, and process tanks.

IC Role / Device Role / Timing Role: Burst-fire or phase-angle controlled switch delivering 1–3 kW AC power with <1 kHz modulation.

Use Value: Optimized low-frequency switching behavior reduces EMI filter complexity and improves power factor vs. high-frequency PWM alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP10NB60S	Same die, TO-220 through-hole package; R_thj-case = 1.56 °C/W identical, but higher R_thj-amb (62.5 vs. ~40 °C/W for D²PAK on 2 oz Cu).	Preferred for prototyping or low-volume assemblies requiring manual soldering; less suitable for high-density automated SMT lines.	Select when mechanical mounting constraints favor leaded packages or when existing TO-220 heatsinks are reused.
IRG4PH40KD	600 V, 12 A IGBT; V_CE(sat) = 1.85 V @ 10 A; Q_g = 47 nC; slower t_d(off) = 3.5 µs; not PowerMESH™.	Higher conduction loss increases thermal stress in sustained 10–16 A operation; requires larger heatsink or derating.	Consider only if legacy IR design reuse is mandatory; avoid for new designs targeting efficiency or thermal density.

Compared with STGP10NB60S, STGB10NB60ST4 offers superior board-level thermal performance and automation compatibility; versus IRG4PH40KD, it delivers lower conduction loss and faster switching, enabling smaller passive components and reduced system footprint in motor and heater controls.

Availability

STGB10NB60ST4 is available at Aetrix Electronics and suitable for motor drive inverters, light dimmer modules, static relay replacements, and industrial heater controls requiring stable component supply across extended production lifecycles.

Supply support for STGB10NB60ST4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This IGBT belongs to ST's PowerMESH™ IGBT family, engineered specifically for cost-sensitive, low-frequency industrial power switching applications where conduction efficiency and ruggedness outweigh ultra-fast switching needs.

FAQ

What is the maximum gate-emitter voltage rating for STGB10NB60ST4?

The absolute maximum V_GE is ±20 V. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended gate drive is +15 V for full saturation and –5 V to –10 V for fast, noise-immune turn-off. Exceeding ±20 V even momentarily may cause irreversible failure due to gate punch-through.

Can STGB10NB60ST4 replace a MOSFET in a 400 VAC dimmer circuit?

Yes - its 600 V V_CES provides sufficient margin for 400 VAC peak (≈565 V), and its low V_CE(sat) yields lower conduction loss than most 600 V MOSFETs at >5 A. However, unlike MOSFETs, it requires active gate turn-off and exhibits tail current; gate driver design must account for 33 nC Q_g and 2.2 µs t_d(off).

Is a freewheeling diode required when using STGB10NB60ST4 in an inductive load circuit?

Yes - STGB10NB60ST4 does not integrate an anti-parallel diode. An external ultrafast or soft-recovery diode (e.g., STTH8R06D) must be placed across the load or in the bridge leg to provide current recirculation path during turn-off. Failure to do so causes destructive voltage spikes exceeding V_CES due to L·di/dt.

What PCB layout practices are critical for thermal performance of STGB10NB60ST4?

Use ≥2 oz copper on the collector pad with ≥6 thermal vias (0.3 mm diameter, spaced ≤2 mm apart) connecting to internal ground/power planes. Maintain ≥1.5 mm clearance from gate/emitter traces to minimize coupling. Avoid routing high dv/dt traces near gate; keep gate loop area <10 mm² and use Kelvin emitter connection for accurate drive referencing.

STGB10NB60ST4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 29 A

Current - Collector Pulsed (Icm):: 80 A

Vce(on) (Max) @ Vge, Ic:: 1.75V @ 15V, 10A

Power - Max:: 80 W

Switching Energy:: 600µJ (on), 5mJ (off)

Input Type:: Standard

Gate Charge:: 33 nC

Td (on/off) @ 25°C:: 700ns/1.2µs

Test Condition:: 480V, 10A, 1kOhm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STGB10NB60ST4 FAQ

1.How can I place an order for STGB10NB60ST4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB10NB60ST4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB10NB60ST4 reliable?

The price and inventory of STGB10NB60ST4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB10NB60ST4 is usually 5 days.

3.What payment methods are accepted for STGB10NB60ST4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB10NB60ST4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB10NB60ST4?

STGB10NB60ST4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB10NB60ST4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB10NB60ST4?

For technical support, including STGB10NB60ST4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB10NB60ST4 requirements.

6.How does Aetrix verify that STGB10NB60ST4 is sourced from the original manufacturer or authorized distributors?

All STGB10NB60ST4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB10NB60ST4 meets industry standards.

7.What is the process for return or replacement of STGB10NB60ST4?

All STGB10NB60ST4 units undergo pre-shipment inspection (PSI). If there is an issue with STGB10NB60ST4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB10NB60ST4 part is unused and in its original packaging.

Return procedure for STGB10NB60ST4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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