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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB12NB60KDT4

Name: STGB12NB60KDT4
Brand: STMicroelectronics
SKU: STGB12NB60KDT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB12NB60KDT4

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGB12NB60KDT4.pdf

Description:: IGBT 600V 30A 125W D2PAK

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Product details

Overview

STGB12NB60KDT4 from STMicroelectronics is a 600 V, 18 A N-channel PowerMESH™ IGBT in D2PAK (TO-263) package with co-packaged antiparallel diode, optimized for high-frequency switching up to 50 kHz and short-circuit withstand time of 10 µs. It delivers low V_CE(sat) (2.8 V max at 12 A), low gate charge (54 nC), and high current capability - used in UPS inverters, SMPS primary-side switches, and high-frequency motor drives.

For engineers reviewing the STGB12NB60KDT4 datasheet, STGB12NB60KDT4 pinout, STGB12NB60KDT4 application, or STGB12NB60KDT4 equivalent, key selection criteria include short-circuit robustness, switching loss (E_off = 650 µJ at T_j = 125°C), thermal resistance (R_thj-case = 1.0 °C/W), and integrated diode recovery characteristics (t_rr = 80 ns).

Technical Context

This IGBT employs ST's patented PowerMESH™ strip layout for high cell density and reduced saturation voltage. Its gate threshold voltage (5–7 V) enables reliable TTL/CMOS-level drive, while the 10 µs short-circuit withstand time is validated under V_CE = 0.5 × BV_CES, V_GE = 15 V, R_G = 10 Ω, and T_j = 125°C conditions.

Switching performance is characterized at V_CC = 480 V, I_C = 12 A, and R_G = 10 Ω: t_d(off) = 150 ns, t_f = 220 ns, and E_ts = 830 µJ at 125°C. The integrated fast-recovery diode (I_F = 12 A, t_rr = 80 ns) supports bidirectional conduction in bridge topologies without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage for primary-side switch in 400 V DC bus applications
I_C (100°C)	18 A - Continuous collector current rating at case temperature 100°C, defining thermal design margin
V_CE(sat)	2.8 V max - Low on-state loss enabling <1.5 W conduction loss at 12 A, critical for efficiency
Q_g	54 nC - Total gate charge determining driver power requirement and switching speed control
t_wsc	10 µs - Verified short-circuit withstand time under worst-case junction temperature and gate resistance
R_thj-case	1.0 °C/W - Junction-to-case thermal resistance enabling direct heatsink mounting with predictable ΔT
E_off	650 µJ at 125°C - Turn-off energy defining snubber sizing and driver dissipation in hard-switched converters

Pinout & Package

D2PAK (TO-263) package: surface-mount, isolated tab, 3-pin configuration with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	High-impedance MOS-gated terminal requiring ≤±20 V drive; connects to gate driver IC output
2 (Collector)	High-side power output	Internally bonded to exposed metal tab; electrically and thermally connected to heatsink
3 (Emitter)	Power return / reference node	Low-inductance emitter connection; forms common source node with antiparallel diode cathode

Key Features

Feature	Design Value
Short-circuit proof architecture	Guaranteed 10 µs withstand under JEDEC-standard test conditions, eliminating need for external desaturation protection in many designs
Co-packaged fast recovery diode	Integrated 12 A / 80 ns reverse recovery diode eliminates discrete diode placement and layout parasitics in half-bridge legs
Low gate charge (54 nC)	Reduces gate driver power consumption and enables use of cost-effective 1–2 A peak drivers without compromising switching speed
Optimized for 50 kHz operation	Combines low E_ts (830 µJ) and controlled tail current to maintain efficiency and thermal stability in high-frequency SMPS
PowerMESH™ cell structure	Delivers uniform current distribution and reduced V_CE(sat) drift over temperature versus planar IGBTs

Applications

UPS Inverter Stage

Server SMPS Primary Switch

Use Scenario: 3.3 kW online double-conversion UPS with IGBT-based full-bridge inverter feeding transformer-isolated output.

IC Role / Device Role / Timing Role: High-side switching element in hard-switched full-bridge topology operating at 20–30 kHz.

Use Value: 10 µs short-circuit tolerance allows safe operation during AC line fault transients without immediate shutdown.

Use Scenario: 1 kW telecom rectifier using phase-shifted full-bridge topology with synchronous rectification.

IC Role / Device Role / Timing Role: Primary-side power switch handling 400 V DC bus and delivering 2.5 A RMS output current.

Use Value: Low V_CE(sat) (2.2 V typ.) reduces conduction loss by >15% vs. comparable 600 V IGBTs, improving full-load efficiency.

Industrial Motor Drive Inverter

Induction Heating Half-Bridge

Use Scenario: 5 HP variable-frequency drive controlling 3-phase induction motor via 6-pulse IGBT inverter.

IC Role / Device Role / Timing Role: Upper-leg switch in three-phase leg, commutating at 1–16 kHz PWM carrier frequency.

Use Value: Integrated diode with 240 nC Q_rr minimizes reverse recovery losses during freewheeling, reducing heatsink size by ~20%.

Use Scenario: 2.5 kW resonant half-bridge for cooktop heating, operating at 20–50 kHz with zero-voltage switching.

IC Role / Device Role / Timing Role: Main switching device in asymmetrical half-bridge, conducting high di/dt currents during resonance.

Use Value: Fast fall time (220 ns) and low tail current enable precise dead-time control and reduce switching overlap losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN120N60B3	Higher V_CE(sat) (2.9 V max), lower Q_g (42 nC), no integrated diode	Requires external fast diode; better suited for ZVS topologies where diode recovery is less critical	Select when gate drive power is constrained and diode can be separately optimized
Infineon IKP12N60T	Lower R_thj-case (0.85 °C/W), higher short-circuit time (12 µs), same V_CE(sat)	Superior thermal performance enables higher ambient operation in sealed enclosures	Select when thermal headroom is limiting and board space allows TO-247 footprint

Compared with IXGN120N60B3 and IKP12N60T, STGB12NB60KDT4 uniquely combines integrated diode, D2PAK surface-mount compatibility, and verified 10 µs short-circuit robustness - making it optimal for space-constrained, high-reliability UPS and industrial SMPS designs where layout simplicity and fault tolerance are prioritized.

Availability

STGB12NB60KDT4 is available at Aetrix Electronics and suitable for UPS inverters, server SMPS, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STGB12NB60KDT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This part belongs to ST's PowerMESH™ IGBT product line, engineered specifically for high-frequency, high-reliability switching in industrial power conversion systems where short-circuit robustness and thermal efficiency are critical.

FAQ

What is the maximum gate-emitter voltage rating for STGB12NB60KDT4?

The absolute maximum gate-emitter voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V, with –5 V to –10 V recommended for active Miller clamping during turn-off to prevent spurious conduction.

Does STGB12NB60KDT4 require an external freewheeling diode in half-bridge configurations?

No - it integrates a co-packaged fast recovery diode rated for 12 A continuous forward current and 80 ns reverse recovery time. This eliminates the need for an external diode in standard half-bridge or full-bridge inverter legs, reducing PCB area and parasitic inductance.

How is short-circuit withstand time validated for this IGBT?

Short-circuit withstand time (10 µs) is measured per JEDEC standard JESD22-A114 under V_CE = 0.5 × BV_CES (i.e., 300 V), V_GE = 15 V, R_G = 10 Ω, and T_j = 125°C. Test pulses are limited to avoid exceeding T_jmax = 150°C, and results are guaranteed across the production lot.

Can STGB12NB60KDT4 be used in zero-voltage switching (ZVS) topologies?

Yes - its low tail current and 220 ns fall time support ZVS operation in phase-shifted full-bridge and LLC resonant converters. However, the integrated diode's Q_rr (240 nC) must be accounted for in resonant tank design to avoid excessive circulating current and diode stress.

STGB12NB60KDT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 12A

Power - Max:: 125 W

Switching Energy:: 258µJ (off)

Input Type:: Standard

Gate Charge:: 54 nC

Td (on/off) @ 25°C:: 25ns/96ns

Test Condition:: 480V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr):: 80 ns

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STGB12NB60KDT4 FAQ

1.How can I place an order for STGB12NB60KDT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB12NB60KDT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB12NB60KDT4 reliable?

The price and inventory of STGB12NB60KDT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB12NB60KDT4 is usually 5 days.

3.What payment methods are accepted for STGB12NB60KDT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB12NB60KDT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB12NB60KDT4?

STGB12NB60KDT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB12NB60KDT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB12NB60KDT4?

For technical support, including STGB12NB60KDT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB12NB60KDT4 requirements.

6.How does Aetrix verify that STGB12NB60KDT4 is sourced from the original manufacturer or authorized distributors?

All STGB12NB60KDT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB12NB60KDT4 meets industry standards.

7.What is the process for return or replacement of STGB12NB60KDT4?

All STGB12NB60KDT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGB12NB60KDT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB12NB60KDT4 part is unused and in its original packaging.

Return procedure for STGB12NB60KDT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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