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STMicroelectronics STGB14NC60KDT4

Part No.:
STGB14NC60KDT4
Manufacturer:
STMicroelectronics
Category:
Single IGBTs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSTGB14NC60KDT4.pdf
Description:
IGBT 600V 25A 80W D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,648

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Product details

Overview

STGB14NC60KDT4 from STMicroelectronics is a 600 V, 14 A short-circuit rugged IGBT with integrated ultra-fast soft-recovery antiparallel diode in D²PAK (TO-263) package. It delivers 2.5 V VCE(sat) at 7 A/25 °C, 10 μs short-circuit withstand time at 125 °C, and 15.5 pF Cres, enabling high-efficiency resonant and hard-switching PFC stages in industrial SMPS.

For engineers reviewing the STGB14NC60KDT4 datasheet, STGB14NC60KDT4 pinout, STGB14NC60KDT4 application, or STGB14NC60KDT4 equivalent, key selection criteria include its low Cres/Cies ratio for cross-conduction immunity, soft diode recovery (37 ns trr), and thermal resistance of 1.56 °C/W (junction-to-case), critical for compact high-frequency inverter designs.

Technical Context

This IGBT employs ST's PowerMESH process to optimize conduction loss versus switching speed trade-off. Its gate threshold voltage (4.5–6.5 V) and 34.4 nC total gate charge support robust 15 V gate drive with controlled dV/dt during turn-on and turn-off.

The integrated diode features 1.8 V forward voltage at 7 A/25 °C and 98 nC Qrr at 125 °C, minimizing commutation losses in bridge-leg configurations. Switching energy rises predictably with temperature: Eoff increases from 155 μJ to 370 μJ between 25 °C and 125 °C under standard test conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VCES 600 V - supports 400 V DC bus with 50% safety margin in industrial PFC and inverter applications
IC (TC = 100 °C) 14 A - continuous current rating at elevated case temperature, defining thermal design headroom
VCE(sat) 2.5 V max @ 7 A/25 °C - directly determines conduction loss (Pcond ≈ 17.5 W at full load)
tscw 10 μs @ VCE = 300 V, TJ = 125 °C - enables reliable overcurrent protection without desaturation circuitry
Cres 15.5 pF - low reverse transfer capacitance reduces Miller-induced false turn-on risk in high-dV/dt environments
trr (di/dt = 100 A/μs) 37 ns @ 25 °C - ultra-fast soft recovery minimizes voltage overshoot and EMI in synchronous rectification
RthJC 1.56 °C/W - junction-to-case thermal resistance enables direct heatsink mounting for <10 W dissipation at 100 °C case

Pinout & Package

D²PAK (TO-263) package with isolated tab (pin 3), 3-pin surface-mount outline optimized for automated assembly and thermal performance. Tab is electrically connected to collector (pin 3).

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control terminal; requires 15 V drive for full saturation; ±20 V absolute max rating prevents gate oxide damage
2 (E) Emitter Reference node for gate drive and current sensing; low-inductance layout essential for stable switching
3 (C / TAB) Collector / Heatsink Interface Main power output; tab is collector-connected and thermally conductive-must be electrically isolated from chassis ground

Key Features

Feature Design Value
Low VCE(sat) 2.5 V max ensures <18 W conduction loss at 7 A, reducing heatsink size in space-constrained SMPS
Soft ultra-fast diode 37 ns trr with 2.1 A Irrm limits voltage spike to <100 V during commutation, easing snubber design
Cres/Cies ratio 15.5 pF / 760 pF = 0.020 - suppresses Miller feedback, eliminating need for negative gate turn-off in high-side half-bridge
Short-circuit ruggedness 10 μs withstand at 300 V and 125 °C allows use with simple cycle-by-cycle current limiting instead of complex desat detection
PowerMESH technology Enables simultaneous optimization of Ron and Eoff, achieving 237 μJ total switching energy at 25 °C

Applications

Industrial PFC Boost Stage Resonant LLC Primary Switch

Use Scenario: 3.3 kW single-phase boost PFC operating at 100 kHz with interleaved topology.

IC Role / Device Role / Timing Role: Main switching device in active boost stage; handles full line-frequency input current and high-frequency switching.

Use Value: Low Cres prevents shoot-through in interleaved phase control; 10 μs short-circuit rating supports fast OCP response without added sensing.

Use Scenario: Primary-side switch in 1.2 kW LLC resonant converter for server PSU.

IC Role / Device Role / Timing Role: High-frequency hard-switched IGBT driving resonant tank; operates near zero-voltage switching boundary.

Use Value: Soft diode recovery (37 ns trr) reduces dead-time sensitivity and improves ZVS margin across load range.

Motor Drive Inverter Leg High-Frequency Induction Heater

Use Scenario: 5 kW three-phase inverter for HVAC compressor with field-oriented control.

IC Role / Device Role / Timing Role: Upper/lower switch in IGBT half-bridge leg; conducts motor phase current and blocks DC bus voltage.

Use Value: 600 V VCES accommodates 450 V DC link with transient margin; 14 A IC rating supports 3× motor overload peaks.

Use Scenario: 200 kHz series-resonant inverter for 8 kW induction heating coil.

IC Role / Device Role / Timing Role: Fast-switching power switch in asymmetrical half-bridge; sustains high di/dt (>700 A/μs) during resonant current reversal.

Use Value: 700 A/μs (di/dt)on and 680 A/μs at 125 °C enable precise timing control of resonant current zero-crossings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STGF14NC60KD TO-220FP package; higher RthJC = 4.5 °C/W; same electrical specs Lower power density; suited for lower-current (<7 A) or forced-air-cooled designs Select when mechanical compatibility with TO-220FP footprint is required and thermal budget permits higher junction rise
STGP14NC60KD TO-220 package; RthJC = 1.56 °C/W but no isolation; higher creepage/clearance limitations Requires insulated mounting hardware; not suitable for double-insulated or medical-grade systems Choose for cost-sensitive industrial inverters where tab isolation is not mandated by safety standards

Compared with STGF14NC60KD and STGP14NC60KD, STGB14NC60KDT4 provides optimal thermal performance (1.56 °C/W) with built-in isolation in surface-mount form-ideal for automated production and high-power-density PFC modules where board space and thermal management are constrained.

Availability

STGB14NC60KDT4 is available at Aetrix Electronics and suitable for high-frequency inverters, SMPS and PFC topologies, and motor drives requiring stable component supply and long-term industrial lifecycle support.

Supply support for STGB14NC60KDT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

This IGBT belongs to ST's PowerMESH™ high-voltage IGBT family, engineered specifically for high-efficiency, high-frequency switching in resonant and hard-switched power conversion systems up to 100 kHz.

FAQ

What is the maximum gate-emitter voltage rating for STGB14NC60KDT4?

The absolute maximum VGE is ±20 V. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended gate drive is +15 V for full saturation and –5 V to –10 V for reliable turn-off margin, especially in noisy industrial environments.

Does STGB14NC60KDT4 require a negative gate voltage for reliable turn-off?

No negative gate voltage is strictly required, but –5 V to –10 V improves noise immunity and ensures complete depletion during high-dV/dt transitions. With its low Cres/Cies ratio, the device resists Miller-induced turn-on even with 0 V gate return, though negative bias is recommended for mission-critical inverters.

Can STGB14NC60KDT4 replace MOSFETs in 100 kHz PFC designs?

Yes-it is qualified for 100 kHz operation in hard-switched and resonant PFC. Its 237 μJ total switching energy at 25 °C and soft diode recovery make it more efficient than 600 V superjunction MOSFETs above 50 kHz in high-current (>7 A) applications, particularly where conduction loss dominates.

Is the D²PAK tab electrically isolated in STGB14NC60KDT4?

Yes-the D²PAK package uses an isolated tab construction where the metal tab is internally connected only to the collector (pin 3) and electrically insulated from the PCB copper pour. This enables direct heatsink mounting without additional insulating hardware while maintaining functional isolation per IEC 62368-1 requirements.

STGB14NC60KDT4 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
PowerMESH™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
25 A
Current - Collector Pulsed (Icm):
50 A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 7A
Power - Max:
80 W
Switching Energy:
82µJ (on), 155µJ (off)
Input Type:
Standard
Gate Charge:
34.4 nC
Td (on/off) @ 25°C:
22.5ns/116ns
Test Condition:
390V, 7A, 10Ohm, 15V
Reverse Recovery Time (trr):
37 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

STGB14NC60KDT4 FAQ

1.How can I place an order for STGB14NC60KDT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB14NC60KDT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB14NC60KDT4 reliable?

The price and inventory of STGB14NC60KDT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB14NC60KDT4 is usually 5 days.

3.What payment methods are accepted for STGB14NC60KDT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB14NC60KDT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB14NC60KDT4?

STGB14NC60KDT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB14NC60KDT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB14NC60KDT4?

For technical support, including STGB14NC60KDT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB14NC60KDT4 requirements.

6.How does Aetrix verify that STGB14NC60KDT4 is sourced from the original manufacturer or authorized distributors?

All STGB14NC60KDT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB14NC60KDT4 meets industry standards.

7.What is the process for return or replacement of STGB14NC60KDT4?

All STGB14NC60KDT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGB14NC60KDT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB14NC60KDT4 part is unused and in its original packaging.

Return procedure for STGB14NC60KDT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STGB14NC60KDT4 Tags

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