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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB15H60DF

Name: STGB15H60DF
Brand: STMicroelectronics
SKU: STGB15H60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB15H60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGB15H60DF.pdf

Description:: IGBT TRENCH FS 600V 30A TO263

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGB15H60DF from STMicroelectronics is a 600 V, 15 A trench gate field-stop IGBT with integrated ultrafast soft-recovery antiparallel diode in D²PAK (TO-263) package. It delivers 1.6–1.8 V V_CE(sat) at 15 A and 175 °C, 3–5 μs short-circuit withstand time, and 103 ns diode reverse recovery time - optimized for high-frequency motor control, UPS, and PFC converters requiring low conduction + switching loss trade-off.

For engineers reviewing the STGB15H60DF datasheet, STGB15H60DF pinout, STGB15H60DF application, or STGB15H60DF equivalent, this page provides verified thermal resistance (R_thJC = 1.3 °C/W), gate charge (Q_g = 81 nC), safe paralleling capability, and real-world switching energy (E_on = 136 μJ, E_off = 207 μJ at 175 °C) to support high-efficiency converter design and thermal margin validation.

Technical Context

This IGBT uses ST's proprietary trench gate field-stop structure to achieve a balanced conduction–switching loss profile ideal for 20–100 kHz converters. Its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution enable stable parallel operation without external current-sharing resistors.

The integrated diode features ultrafast soft recovery (trr = 103 ns, Qrr = 128 nC at 25 °C) and low forward voltage (V_F = 1.8 V at 15 A, 25 °C), minimizing commutation losses and EMI in hard-switched topologies. Switching behavior is characterized under standardized inductive load conditions (V_CC = 400 V, I_C = 15 A, R_G = 10 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage for 600 V bus applications like industrial PFC and servo drives.
I_C (T_C = 100 °C)	15 A - Continuous collector current rating at case temperature of 100 °C, defining thermal derating envelope.
V_CE(sat)	1.6–1.8 V @ 15 A, 25–175 °C - Low saturation voltage reduces conduction loss and improves efficiency at full load.
t_sc	3–5 μs - Short-circuit withstand time enables robust protection in motor fault conditions without desaturation circuitry.
trr / Qrr	103 ns / 128 nC @ 25 °C - Ultrafast soft-recovery diode minimizes voltage overshoot and switching loss during turn-off commutation.
R_thJC (IGBT)	1.3 °C/W - Low junction-to-case thermal resistance supports high power density mounting on heatsinks.
Q_g	81 nC - Total gate charge determines driver strength requirement and influences switching speed vs. loss trade-off.

Pinout & Package

D²PAK (TO-263) package with isolated tab (pin 3), standard 3-pin layout: pin 1 = Gate, pin 2 = Collector (tab-connected), pin 3 = Emitter. The metal tab is electrically connected to the collector, enabling direct heatsink mounting with electrical isolation required.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires ±20 V max drive voltage and 81 nC total charge for full enhancement.
Pin 2	Collector (Tab)	Main high-side power terminal; electrically tied to exposed metal tab for low-inductance, high-current path and thermal conduction.
Pin 3	Emitter	Reference node for gate drive and current sensing; forms low-impedance return path for IGBT and diode currents.

Key Features

Feature	Design Value
Trench gate field-stop structure	Enables 600 V rating with low V_CE(sat) and fast switching - critical for >20 kHz PFC and inverter stages.
Slightly positive V_CE(sat) tempco	Ensures inherent current sharing in parallel configurations without external balancing components.
Ultrafast soft-recovery antiparallel diode	Reduces voltage spikes and EMI during freewheeling, enabling snubberless designs in motor drives.
Short-circuit rated (3–5 μs)	Allows use in unprotected motor control applications where overcurrent events may occur before protection triggers.
Low R_thJC (1.3 °C/W)	Supports compact thermal design: 115 W total dissipation at T_C = 25 °C enables high-power density layouts.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 1–3 kW servo or pump drives operating at 8–25 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device in leg topology; handles bidirectional current flow via integrated diode during PWM dead-time.

Use Value: 1.6 V V_CE(sat) and 103 ns trr reduce conduction + commutation losses by ~12% vs. standard H-series IGBTs at 15 A/100 °C.

Use Scenario: Output inverter stage in online double-conversion UPS systems delivering clean 50/60 Hz sine wave under battery backup.

IC Role / Device Role / Timing Role: High-side switch in full-bridge configuration; conducts 15 A RMS output current with low THD requirements.

Use Value: Tight parameter distribution and positive V_CE(sat) tempco ensure balanced current sharing across parallel devices in redundant power modules.

Active PFC Boost Converters

Induction Heating Inverters

Use Scenario: Critical conduction mode (CrM) or continuous conduction mode (CCM) boost PFC stage in 2–5 kW server PSUs or industrial SMPS.

IC Role / Device Role / Timing Role: Fast-switching main switch; must sustain 600 V DC link while handling high di/dt during zero-current switching transitions.

Use Value: 1470 A/μs (di/dt)_on and 1.3 °C/W R_thJC allow reliable operation at 100 kHz with <1.5 °C/W total thermal resistance to ambient.

Use Scenario: Half-bridge resonant inverter in 3–8 kW induction cooktops or industrial heating systems operating at 20–50 kHz.

IC Role / Device Role / Timing Role: High-frequency switching element subjected to repetitive hard-switching and reverse recovery stress from LC tank current.

Use Value: Soft-recovery diode (Qrr = 128 nC, Irrm = 2.5 A) limits voltage overshoot to <750 V during ZVS transitions, reducing snubber losses and MOSFET replacement risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGF15H60DF	TO-220FP package; higher R_thJC = 5 °C/W; same electrical specs.	Limited to lower-power (<40 W dissipation) or forced-air-cooled designs due to reduced thermal performance.	Select when board space constraints prohibit D²PAK footprint but thermal budget allows.
STGP15H60DF	TO-220 package; R_thJC = 1.3 °C/W (same as STGB15H60DF); no isolation between tab and leads.	Requires insulated mounting hardware; unsuitable for floating heatsink configurations common in motor drives.	Choose only for cost-sensitive, non-isolated heatsink applications with mechanical compatibility priority.

Compared with STGF15H60DF and STGP15H60DF, STGB15H60DF uniquely combines D²PAK's low R_thJC (1.3 °C/W) with built-in collector-tab isolation - enabling high-power, thermally demanding motor/PFC designs without additional insulation layers or thermal derating penalties.

Availability

STGB15H60DF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), and active power factor correction (PFC) circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for STGB15H60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGB15H60DF belongs to ST's H-series trench gate field-stop IGBT product line, engineered specifically for high-efficiency, high-frequency power conversion in motor control, UPS, and PFC applications where conduction–switching loss balance is critical.

FAQ

What is the maximum gate-emitter voltage rating for STGB15H60DF?

The absolute maximum gate-emitter voltage is ±20 V, as specified in Table 1 of DS9881 Rev 4. Exceeding this rating risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 to –10 V for turn-off to ensure robust noise immunity and fast fall time.

Does STGB15H60DF require an external freewheeling diode?

No - STGB15H60DF integrates an ultrafast soft-recovery antiparallel diode with 103 ns trr and 128 nC Qrr at 25 °C. This eliminates the need for an external diode in standard inverter leg or PFC boost configurations, reducing component count and PCB area.

How does the short-circuit withstand time vary with temperature and V_GE?

t_sc ranges from 3 to 5 μs depending on test conditions: minimum 3 μs at V_CC ≤ 360 V, V_GE = 15 V, R_G = 10 Ω; increases with lower V_GE and decreases at higher junction temperatures. Figure 23 in DS9881 shows t_sc vs. V_GE down to 10 V.

Can STGB15H60DF be paralleled with other IGBTs for higher current capacity?

Yes - its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution (±5% typical) enable stable current sharing in parallel configurations without external emitter resistors, provided layout symmetry and gate drive matching are maintained.

STGB15H60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 15A

Power - Max:: 115 W

Switching Energy:: 136µJ (on), 207µJ (off)

Input Type:: Standard

Gate Charge:: 81 nC

Td (on/off) @ 25°C:: 24.5ns/118ns

Test Condition:: 400V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr):: 103 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STGB15H60DF FAQ

1.How can I place an order for STGB15H60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB15H60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB15H60DF reliable?

The price and inventory of STGB15H60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB15H60DF is usually 5 days.

3.What payment methods are accepted for STGB15H60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB15H60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB15H60DF?

STGB15H60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB15H60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB15H60DF?

For technical support, including STGB15H60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB15H60DF requirements.

6.How does Aetrix verify that STGB15H60DF is sourced from the original manufacturer or authorized distributors?

All STGB15H60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB15H60DF meets industry standards.

7.What is the process for return or replacement of STGB15H60DF?

All STGB15H60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGB15H60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB15H60DF part is unused and in its original packaging.

Return procedure for STGB15H60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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