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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB18N40LZ-1

Name: STGB18N40LZ-1
Brand: STMicroelectronics
SKU: STGB18N40LZ-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB18N40LZ-1

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STGB18N40LZ-1.pdf

Description:: IGBT 420V 30A 150W I2PAK

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Product details

Overview

STGB18N40LZ-1 from STMicroelectronics is an AEC-Q101-qualified automotive-grade IGBT optimized for pencil coil electronic ignition drivers, featuring 390 V internal collector-emitter clamping, 180 mJ single-pulse SCIS energy at T_C = 150 °C, logic-level gate drive (V_GE(th) typ. 1.6 V), and integrated 12–22 kΩ gate-emitter resistor. It operates across –40 to 175 °C junction temperature with 1.35 V V_CE(sat) @ 10 A, 4.5 V.

For engineers reviewing the STGB18N40LZ-1 datasheet, STGB18N40LZ-1 pinout, STGB18N40LZ-1 application in ignition systems, or STGB18N40LZ-1 equivalent for high-energy inductive switching, this page delivers verified electrical specs, thermal data, package geometry, and validated alternatives - all aligned with DS5664 Rev 8 (April 2025).

Technical Context

This IGBT employs ST's PowerMESH technology to deliver low conduction loss and robust short-circuit ruggedness in harsh automotive environments. Its internally clamped 390 V V_CES, ESD-protected gate (8 kV HBM), and integrated R_GE eliminate external protection components in coil driver circuits.

Dynamic performance includes 13.5 µs turn-off delay and 5.5 µs current fall time under 300 V/10 A inductive load conditions, with dV/dt capability up to 105 V/µs. Thermal resistance is 1 °C/W junction-to-case, enabling high-power pulse operation with minimal heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES(clamped)	390 V - Internally clamped collector-emitter voltage prevents destructive overvoltage during inductive flyback in ignition coils.
V_CE(sat)	1.35 V @ 10 A, 4.5 V - Enables <1.4 V on-state drop at rated current, minimizing power loss and thermal stress in 12 V automotive systems.
E_SCIS	180 mJ @ T_C = 150 °C, L = 3 mH - Confirmed single-pulse short-circuit ruggedness for reliable pencil coil switching under worst-case thermal conditions.
R_GE	12–22 kΩ - Integrated gate-emitter resistor provides built-in ESD protection and stabilizes gate bias without external components.
R_thJC	1 °C/W - Low junction-to-case thermal resistance supports high pulsed current (I_CP = 40 A) with direct heatsink mounting.
Q_g	29 nC - Total gate charge enables fast, controlled switching with standard 5 V logic-level drivers, reducing gate drive complexity.
V_GE(th)	1.2–2.3 V - Logic-compatible threshold ensures reliable turn-on with automotive microcontroller GPIO outputs (3.3 V/5 V).

Pinout & Package

Package: D²PAK (TO-263) - surface-mount, thermally enhanced plastic package with exposed drain tab for direct heatsink attachment. Dimensions per Figure 18 (DS5664 Rev 8): D = 9.15 mm, E = 10.2 mm, L = 2.54 mm, tab thickness 1.3 mm.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain / Collector)	Main power output terminal	Exposed metal tab serves as collector connection and primary thermal path; must be electrically isolated and thermally coupled to heatsink.
Pin 1 (Gate)	Control input	Logic-level gate terminal with integrated ESD protection; accepts 3.3 V/5 V drive without level-shifting circuitry.
Pin 2 (Emitter)	Power return / reference node	Emitter connection referenced to ground in low-side coil driver configuration; carries full load current and must be routed with low inductance.
Pin 3 (Emitter)	Second emitter connection	Dual-emitter layout reduces source inductance and improves current sharing in high-dI/dt ignition pulses.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive underhood use including temperature cycling, humidity, and mechanical shock per JESD47.
Integrated R_GE	12–22 kΩ gate-emitter resistor eliminates need for external gate protection network in pencil coil driver PCB layout.
Self-clamped V_CES	390 V clamping avoids external snubber diodes or TVS devices, simplifying BOM and improving reliability in 12 V battery systems.
High SCIS energy	180 mJ at 150 °C enables safe interruption of >30 A peak coil currents without latch-up or second breakdown.
Low V_CE(sat) drift	1.30 V @ 150 °C (vs. 1.35 V @ 25 °C) ensures stable conduction loss across full automotive temperature range.

Applications

Gasoline Engine Ignition

Distributorless Ignition System (DIS)

Use Scenario: Direct driving of individual pencil-type ignition coils in modern inline-4 and V6 engines with cylinder-specific timing control.

IC Role / Device Role / Timing Role: High-side or low-side switch controlling primary coil current; precisely timed turn-off triggers high-voltage secondary spark generation.

Use Value: 180 mJ SCIS energy withstands repeated coil saturation and abrupt current interruption without degradation, ensuring 15+ year field life.

Use Scenario: Dual-coil DIS architecture where one IGBT drives two cylinders via shared primary winding with sequential firing.

IC Role / Device Role / Timing Role: Primary-side power switch managing 10–40 A pulsed current with sub-microsecond timing accuracy for spark synchronization.

Use Value: 1.35 V V_CE(sat) minimizes resistive heating during dwell time, allowing extended coil energization without thermal derating.

Start-Stop System Ignition

Heavy-Duty Diesel Pre-Ignition Assist

Use Scenario: Fast-restart ignition during engine stop-start cycles requiring immediate spark delivery within 200 ms of crank re-engagement.

IC Role / Device Role / Timing Role: Low-latency switch enabling <0.65 µs turn-on delay and <14 µs turn-off delay for precise dwell control under variable battery voltage (9–16 V).

Use Value: Logic-level gate drive (V_GE(th) ≤ 2.3 V) ensures consistent turn-on even at 9 V cold-crank battery voltage.

Use Scenario: Auxiliary pre-ignition heating in cold-start diesel applications using modified ignition coil topology to generate localized plasma.

IC Role / Device Role / Timing Role: High-energy pulse generator delivering 40 A pulsed current into low-inductance (<1 mH) pre-heat loads.

Use Value: 40 A I_CP rating and 105 V/µs dV/dt support rapid current rise/fall needed for plasma initiation without oscillation or overshoot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-based ignition driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGD18N40LZ	TO-220 package, no integrated R_GE, same V_CES(clamped) and SCIS rating	Requires external gate protection and heatsink mounting; suited for legacy through-hole designs	Select when board space allows TO-220 footprint and discrete gate resistor implementation is preferred.
IXYS IXGN100N60B3	600 V rating, higher V_CE(sat) (2.2 V), no integrated R_GE, non-AEC-Q101	Designed for industrial SMPS, not qualified for automotive temperature or vibration stress	Only consider for non-automotive, high-voltage (>400 V) inductive switching where AEC-Q101 compliance is not required.

Compared with STGD18N40LZ and IXGN100N60B3, STGB18N40LZ-1 uniquely combines AEC-Q101 qualification, integrated R_GE, and 180 mJ SCIS energy in a surface-mount D²PAK - making it the only drop-in solution for new automotive ignition PCBs demanding zero external gate protection and high thermal reliability.

Availability

STGB18N40LZ-1 is available at Aetrix Electronics and suitable for gasoline engine ignition modules, distributorless ignition systems (DIS), and start-stop system ignition controllers requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.

Supply support for STGB18N40LZ-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's Automotive Power Switches product line, engineered specifically for high-reliability, high-energy switching in engine management systems - emphasizing ruggedness, thermal stability, and integration to reduce ignition system BOM count.

FAQ

Is STGB18N40LZ-1 pin-compatible with STGD18N40LZ?

No - STGB18N40LZ-1 uses a 3-pin D²PAK (TO-263) package with tab-as-collector, while STGD18N40LZ uses a 3-pin TO-220 package with isolated tab. Pin numbering differs, and the D²PAK has dual emitter pins (Pins 2 and 3), whereas TO-220 has single emitter. PCB layout and thermal interface are not interchangeable.

What is the maximum recommended gate drive voltage for STGB18N40LZ-1?

The absolute maximum V_GE is ±20 V, but ST specifies 5 V as the optimal logic-level gate drive for full saturation and minimal switching loss. Driving above 5 V increases switching speed but offers diminishing returns on V_CE(sat) reduction and risks exceeding the 16 V V_GE(clamped) limit during transients.

Does STGB18N40LZ-1 require an external freewheeling diode?

No - the device features intrinsic reverse conduction capability due to its vertical IGBT structure and is designed to operate without an external anti-parallel diode in pencil coil applications. However, an external fast-recovery diode is still recommended across the coil primary to manage reverse EMF during turn-off if system-level EMI or voltage overshoot exceeds specification limits.

How is ESCIS energy measured for STGB18N40LZ-1, and why does it differ from SCIS?

ESCIS (Energy under Short-Circuit Inductive Switching) is measured per Figure 14 in DS5664 using a 3 mH inductor, 50 V V_CC, and open-gate test condition - yielding 300 mJ at 25 °C and 180 mJ at 150 °C. SCIS (Short-Circuit Safe Operating Area) refers to the same test method but is reported in ST's marketing materials as "SCIS" for consistency; both terms describe identical test conditions and values in this datasheet.

STGB18N40LZ-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 420 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: 40 A

Vce(on) (Max) @ Vge, Ic:: 1.7V @ 4.5V, 10A

Power - Max:: 150 W

Switching Energy:: -

Input Type:: Logic

Gate Charge:: 29 nC

Td (on/off) @ 25°C:: 650ns/13.5µs

Test Condition:: 300V, 10A, 5V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262 (I2PAK)

STGB18N40LZ-1 FAQ

1.How can I place an order for STGB18N40LZ-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB18N40LZ-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB18N40LZ-1 reliable?

The price and inventory of STGB18N40LZ-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB18N40LZ-1 is usually 5 days.

3.What payment methods are accepted for STGB18N40LZ-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB18N40LZ-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB18N40LZ-1?

STGB18N40LZ-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB18N40LZ-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB18N40LZ-1?

For technical support, including STGB18N40LZ-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB18N40LZ-1 requirements.

6.How does Aetrix verify that STGB18N40LZ-1 is sourced from the original manufacturer or authorized distributors?

All STGB18N40LZ-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB18N40LZ-1 meets industry standards.

7.What is the process for return or replacement of STGB18N40LZ-1?

All STGB18N40LZ-1 units undergo pre-shipment inspection (PSI). If there is an issue with STGB18N40LZ-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB18N40LZ-1 part is unused and in its original packaging.

Return procedure for STGB18N40LZ-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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