STMicroelectronics STGB19NC60HDT4
- Part No.:
- STGB19NC60HDT4
- Manufacturer:
- STMicroelectronics
- Category:
- Single IGBTs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STGB19NC60HDT4.pdf
- Description:
- IGBT 600V 40A 130W D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:551
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Product details
Overview
STGB19NC60HDT4 from STMicroelectronics is a 600 V, 19 A very fast IGBT with integrated ultra-fast soft-recovery antiparallel diode in D²PAK (TO-263) package. It delivers VCE(sat) = 1.8 V (typ.) at 12 A/25 °C, 31 ns reverse recovery time (trr), and 53 nC total gate charge-optimized for high-frequency motor controls and resonant SMPS/PFC topologies.
For engineers reviewing the STGB19NC60HDT4 datasheet, STGB19NC60HDT4 pinout, STGB19NC60HDT4 application, or STGB19NC60HDT4 equivalent, key selection criteria include its low conduction loss, ultra-fast diode softness, thermal resistance of 0.95 °C/W (junction-to-case), and suitability for hard-switched and ZVS/ZCS converters operating up to 100 kHz.
Technical Context
This IGBT employs ST's PowerMESH process to balance switching speed and on-state voltage-achieving 27 ns turn-on delay (td(on)) and 73 ns current fall time (tf) at 12 A/390 V with 10 Ω gate resistor. Its integrated diode exhibits 30 nC reverse recovery charge (Qrr) and 2.6 V forward voltage (VF) at 12 A, enabling low-loss commutation without external snubbers.
The device operates across –55 to 150 °C junction temperature, with RthJC = 0.95 °C/W and maximum continuous collector current of 19 A at TC = 100 °C. Its 1180 pF input capacitance (Cies) and 36 pF reverse transfer capacitance (Cres) support stable gate drive design in high-dV/dt environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - Withstands full DC bus voltage in 400 V AC-input PFC and 3-phase motor drives. |
| IC (TC = 100 °C) | 19 A - Sustains continuous output current in compact heatsink-constrained inverters. |
| VCE(sat) | 1.8 V (typ. @ 12 A, 25 °C) - Minimizes conduction loss and thermal stress during high-duty-cycle operation. |
| trr | 31 ns (@ 12 A, 40 V, 100 A/µs) - Enables clean zero-current switching in LLC resonant converters. |
| Eoff | 189 µJ (@ 390 V, 3 A) - Reduces switching loss in high-frequency (>50 kHz) hard-switched SMPS. |
| RthJC | 0.95 °C/W - Allows direct mounting to PCB copper or small heatsinks without thermal derating penalties. |
| Qg | 53 nC - Matches standard 1–2 A peak gate drivers (e.g., STGAP2SIC, UCC27531) without excessive power dissipation. |
Pinout & Package
D²PAK (TO-263) package with exposed drain tab (pin 3) for low-inductance, high-current source connection and thermal path. Standard 3-pin layout: Gate (pin 1), Collector (pin 2), Emitter (pin 3 / tab).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal requiring ≤±20 V gate-emitter voltage; 53 nC total charge demands robust gate driver with ≥1.5 A peak sourcing/sinking capability. |
| Pin 2 | Collector | Main high-side power terminal; connects to DC bus or transformer primary; rated for 600 V blocking and 60 A pulsed current. |
| Pin 3 / Tab | Emitter + Diode Cathode | Low-inductance emitter return and integrated diode cathode; must be soldered to large copper pour for thermal and EMI performance. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-fast soft-recovery diode | 31 ns trr, 2.6 V VF, and <2 A IRRM suppress voltage overshoot and EMI during freewheeling in bridge legs. |
| Low VCE(sat) with fast switching | 1.8 V saturation voltage at 12 A combined with 27 ns td(on) enables >97% efficiency in 100 kHz PFC stages. |
| PowerMESH trench-gate structure | Optimized carrier lifetime control yields 189 µJ Eoff and 85 µJ Eon at 390 V/3 A-reducing total switching loss by 35% vs. standard 600 V IGBTs. |
| Robust RBSOA | Rated for 40 A latching current (ICL) and 60 A pulsed current (ICP)-supports overload handling in servo motor drives without desaturation protection. |
Applications
| Industrial Motor Drives | Resonant SMPS |
|---|---|
|
Use Scenario: 3-phase inverter stage in 0.75–2.2 kW variable-frequency drives for pumps and fans. IC Role / Device Role / Timing Role: High-side switch in 6-step or SVM-controlled half-bridge; handles 16 kHz PWM with minimal shoot-through risk due to soft diode recovery. Use Value: 31 ns trr and 2.6 V VF reduce diode reverse recovery loss by 42% vs. standard FRD-equipped IGBTs, lowering heatsink size by 30%. |
Use Scenario: Primary-side switch in 300–500 W LLC resonant converter for telecom rectifiers. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) active switch; leverages ultra-fast diode to ensure body-diode conduction before main switch turn-on. Use Value: 53 nC Qg and 1180 pF Cies enable precise timing control of ZVS window, improving light-load efficiency by 2.1% over MOSFET-based designs. |
| Hard-Switched PFC | High-Frequency Induction Heating |
|
Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for industrial UPS systems. IC Role / Device Role / Timing Role: Main switching element operating at 65–100 kHz; conducts 19 A RMS current with 600 V blocking capability. Use Value: 1.8 V VCE(sat) reduces conduction loss to 34 W at full load, allowing TO-263 mounting without forced air cooling. |
Use Scenario: Half-bridge inductor driver in 100–200 kHz induction cooktops and brazing equipment. IC Role / Device Role / Timing Role: High-frequency power switch managing rapid polarity reversal; relies on soft diode to prevent voltage spikes during dead-time commutation. Use Value: 73 ns tf and 97 ns td(off) support <500 ns dead-time margins, increasing system reliability under load transients and coil detuning. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar very fast IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGP19NC60HD | TO-220 package; RthJC = 0.9 °C/W; same electrical specs but higher thermal resistance due to smaller case footprint. | Suitable for lower-power (<1 kW) designs where board space permits larger through-hole mounting and heatsink interface is less constrained. | Select when mechanical compatibility with legacy TO-220 layouts is required and thermal margin allows 5–8 °C higher junction rise. |
| STGW19NC60HD | TO-247 package; RthJC = 0.9 °C/W; identical electrical parameters but improved mechanical robustness and higher creepage/clearance. | Preferred for industrial-grade 3–5 kW inverters needing enhanced isolation, vibration resistance, and long-term reliability in harsh environments. | Choose for high-volume production where automated TO-247 insertion and higher power density justify added cost and footprint. |
Compared with STGP19NC60HD and STGW19NC60HD, STGB19NC60HDT4 offers the smallest footprint and best PCB thermal integration via D²PAK's exposed tab, making it optimal for space-constrained, surface-mount PFC and motor control modules where thermal path optimization outweighs package ruggedness requirements.
Availability
STGB19NC60HDT4 is available at Aetrix Electronics and suitable for high-frequency motor controls, resonant SMPS, and hard-switched PFC applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for STGB19NC60HDT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
This device belongs to ST's PowerMESH™ IGBT family, engineered specifically for high-efficiency, high-frequency power conversion in motor drives, SMPS, and PFC circuits where low conduction loss and fast, soft switching are critical.
FAQ
What gate drive voltage and resistance are recommended for STGB19NC60HDT4?
ST specifies ±20 V absolute maximum gate-emitter voltage. For optimal switching performance and safe operation, use VGE = +15 V / –5 V with a 10 Ω gate resistor-verified to achieve 27 ns td(on), 97 ns td(off), and minimal oscillation in 390 V inductive tests per DS4967 Figure 20.
Does STGB19NC60HDT4 require an external freewheeling diode?
No. The device integrates a monolithic ultra-fast soft-recovery antiparallel diode with 31 ns trr, 30 nC Qrr, and 2.6 V VF at 12 A-fully qualified for freewheeling in bridge configurations without external diodes, as confirmed in DS4967 Table 7 and Figure 16.
How does thermal performance compare between STGB19NC60HDT4 and TO-247 variants?
STGB19NC60HDT4 has RthJC = 0.95 °C/W (D²PAK), versus 0.9 °C/W for STGW19NC60HD (TO-247). Though TO-247 offers marginally better thermal resistance, the D²PAK's exposed tab enables superior PCB copper thermal spreading-yielding comparable or better system-level thermal performance in compact SMT designs.
Is STGB19NC60HDT4 compliant with RoHS and REACH regulations?
Yes. STGB19NC60HDT4 is manufactured in ST's ECOPACK®-compliant D²PAK package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, with lead-free terminations and halogen-free molding compound per DS4967 Section 4.
STGB19NC60HDT4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- PowerMESH™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 40 A
- Current - Collector Pulsed (Icm):
- 60 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 12A
- Power - Max:
- 130 W
- Switching Energy:
- 85µJ (on), 189µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 53 nC
- Td (on/off) @ 25°C:
- 25ns/97ns
- Test Condition:
- 390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr):
- 31 ns
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STGB19NC60HDT4 FAQ
1.How can I place an order for STGB19NC60HDT4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STGB19NC60HDT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STGB19NC60HDT4 reliable?
The price and inventory of STGB19NC60HDT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB19NC60HDT4 is usually 5 days.
3.What payment methods are accepted for STGB19NC60HDT4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB19NC60HDT4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STGB19NC60HDT4?
STGB19NC60HDT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STGB19NC60HDT4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STGB19NC60HDT4?
For technical support, including STGB19NC60HDT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB19NC60HDT4 requirements.
6.How does Aetrix verify that STGB19NC60HDT4 is sourced from the original manufacturer or authorized distributors?
All STGB19NC60HDT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB19NC60HDT4 meets industry standards.
7.What is the process for return or replacement of STGB19NC60HDT4?
All STGB19NC60HDT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGB19NC60HDT4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STGB19NC60HDT4 part is unused and in its original packaging.
Return procedure for STGB19NC60HDT4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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