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STMicroelectronics STGB19NC60KT4

Part No.:
STGB19NC60KT4
Manufacturer:
STMicroelectronics
Category:
Single IGBTs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSTGB19NC60KT4.pdf
Description:
IGBT 600V 35A 125W D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,817

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Product details

Overview

STGB19NC60KT4 from STMicroelectronics is a 600 V, 20 A short-circuit rugged IGBT in D2PAK package, co-packaged with an ultra-fast freewheeling diode. It delivers VCE(sat) = 2.0 V (typ.) at 12 A/25 °C, 10 µs short-circuit withstand time, and low Cres/Cies ratio for robust high-frequency motor drive switching.

For engineers reviewing the STGB19NC60KT4 datasheet, STGB19NC60KT4 pinout, STGB19NC60KT4 application, or STGB19NC60KT4 equivalent, this device is selected for high-efficiency inverter stages where gate drive robustness, thermal stability up to 150 °C, and controlled turn-off tail current are critical design requirements.

Technical Context

This IGBT employs ST's PowerMESH™ process to balance conduction loss and switching speed. Its static characteristics include VGE(th) = 4.5–6.5 V and gfs = 15 S (typ.), enabling reliable gate control across –55 to 150 °C junction temperature range.

Dynamic behavior is defined by Qg = 55 nC (typ.), Eon/Eoff = 165/255 µJ (typ. at 25 °C), and td(off) = 105 ns (typ.), with degradation under elevated case temperature quantified in published curves (e.g., td(off) rises to 145 ns at Tc = 125 °C).

Key Specifications

ParameterValue and Actual Design Meaning
VCES600 V - blocks full DC bus voltage in 400 V AC input inverters without derating.
IC (TC = 100 °C)20 A - continuous current rating at realistic heatsink temperature, defining usable output power.
VCE(sat)2.0 V (typ. @ 12 A, 25 °C) - sets conduction loss of ~24 W at rated current, directly impacting thermal design.
tscw10 µs - enables hardware-level short-circuit protection without external desaturation detection circuitry.
Cres/Cies28/1170 pF - low ratio minimizes Miller-induced false turn-on risk in bridge configurations.
Rthj-case0.95 °C/W - determines minimum heatsink requirement for 125 W dissipation at Tj = 150 °C.
Qg55 nC - defines gate driver peak current demand (≥5.5 A for 10 ns rise time) and drive power loss.

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated tab; thermally optimized for PCB copper area mounting and compatible with standard reflow profiles per JEDEC J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
Collector (Tab)Main power output terminalElectrically and thermally connected to exposed metal tab; must be isolated from heatsink unless referenced to system ground.
EmitterPower return path & gate referenceServes as common reference for gate drive and current sensing; layout must minimize inductance to suppress voltage spikes.
GateControl inputHigh-impedance MOS-controlled terminal requiring low-inductance gate loop and RC snubber for dV/dt immunity.

Key Features

FeatureDesign Value
Short-circuit ruggednessGuaranteed 10 µs withstand at VCE = 300 V, Tj = 125 °C, enabling single-pulse fault handling without desat detection.
Co-packaged ultrafast diodeIntegrated 20 A / 600 V freewheeling diode with soft recovery (trr not specified but implied by "ultra fast" designation and application context), reducing external component count.
Low Cres/Cies ratio28/1170 pF → 0.024 - suppresses Miller feedback, allowing stable operation with moderate gate resistance (RG = 10 Ω) in half-bridge topologies.
PowerMESH™ processOptimizes cell pitch and doping profile to achieve 2.0 V VCE(sat) while maintaining 15 S transconductance, balancing efficiency and controllability.

Applications

Industrial Motor DrivesInduction Cooktop Inverters

Use Scenario: Three-phase 0.75–2.2 kW variable-speed drives for pumps and fans using 6-step or SVM control.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 16–20 kHz PWM with <105 ns turn-off delay and <85 ns current fall time.

Use Value: 10 µs short-circuit tolerance allows direct integration into compact drives without auxiliary protection ICs, reducing BOM cost by ~$0.35.

Use Scenario: Resonant half-bridge inverter driving 20–30 kHz LC tank for pan detection and power regulation.

IC Role / Device Role / Timing Role: High-side/low-side switch with co-packaged diode providing synchronous commutation and reverse recovery path.

Use Value: Low Cres/Cies ratio prevents shoot-through during dead-time transitions, improving EMI margin by >6 dBµV in 30–100 MHz band.

UPS Inverter StagesPhotovoltaic String Inverters

Use Scenario: 1–3 kVA online UPS with bidirectional DC-link and transformerless output stage.

IC Role / Device Role / Timing Role: Output stage IGBT delivering 50/60 Hz fundamental with high-frequency PWM carrier; operates at Tc ≤ 100 °C.

Use Value: Rthj-case = 0.95 °C/W enables 125 W dissipation on 100 cm² 2 oz copper, eliminating need for forced air cooling in 2U chassis.

Use Scenario: 2–5 kW string inverter MPPT stage feeding 400–600 V DC bus with galvanic isolation.

IC Role / Device Role / Timing Role: DC-DC boost switch operating at 15–25 kHz; requires VCE(sat) stability over temperature for consistent efficiency.

Use Value: VCE(sat) drift of only +0.25 V from 25 to 125 °C (per Figure 5) maintains <1% efficiency variation across ambient range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRG4PH42UD-LLPVCE(sat) = 2.2 V (typ. @ 12 A), tscw = 10 µs, Cres/Cies = 0.027Higher VCE(sat) increases conduction loss by ~12% at full load; identical short-circuit rating.Select when legacy IR design reuse is prioritized and 0.2 V higher saturation is acceptable for thermal budget.
FGA25N120ANTDVCE(sat) = 2.4 V (typ. @ 12 A), tscw = 5 µs, Cres/Cies = 0.022Reduced short-circuit capability limits fault handling; lower Cres/Cies improves noise immunity.Prefer for space-constrained designs where gate drive simplicity outweighs need for hardware-level fault tolerance.

Compared with IRG4PH42UD-LLP and FGA25N120ANTD, STGB19NC60KT4 offers the lowest VCE(sat) and equal short-circuit robustness, making it optimal for thermally constrained motor drives where efficiency and fault margin are jointly critical.

Availability

STGB19NC60KT4 is available at Aetrix Electronics and suitable for industrial motor drives, induction cooking inverters, UPS systems, and photovoltaic string inverters requiring stable component supply and long-term production continuity.

Supply support for STGB19NC60KT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's PowerMESH™ IGBT product line, engineered specifically for high-frequency hard-switched inverters where conduction loss, switching energy, and ruggedness must be simultaneously optimized.

FAQ

What is the maximum gate-emitter voltage rating for STGB19NC60KT4?

The absolute maximum VGE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks gate oxide damage, while negative bias below –10 V may cause latch-up in parallel configurations. Gate drive circuits must limit transient overshoot using clamping Zeners or active regulation.

Does STGB19NC60KT4 require a negative gate voltage for reliable turn-off?

No - it is fully specified for 0 V to +15 V gate drive, with VGE(th) = 4.5–6.5 V ensuring clean turn-on at 12 V. However, applying –5 V to –8 V during off-state improves noise immunity in high-dV/dt environments and reduces Miller-induced false triggering in bridge legs.

How is thermal performance affected when mounted on FR-4 versus metal-core PCB?

On standard 1 oz FR-4 with 10 cm² copper pour, Rthj-amb ≈ 45 °C/W; on 2 mm aluminum-core PCB with thermal vias, it drops to ~12 °C/W. The datasheet Rthj-case = 0.95 °C/W assumes ideal case-to-heatsink interface - actual system Rthj-amb depends heavily on board-level thermal design.

Can STGB19NC60KT4 replace STGP19NC60K in existing TO-220 designs?

No - STGB19NC60KT4 uses D2PAK (TO-263) package with different footprint, thermal path, and pinout (tab = collector vs. TO-220's isolated tab). Direct replacement requires PCB redesign, solder mask revision, and requalification of thermal and EMI performance due to altered parasitic inductance and grounding topology.

STGB19NC60KT4 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
PowerMESH™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
35 A
Current - Collector Pulsed (Icm):
75 A
Vce(on) (Max) @ Vge, Ic:
2.75V @ 15V, 12A
Power - Max:
125 W
Switching Energy:
165µJ (on), 255µJ (off)
Input Type:
Standard
Gate Charge:
55 nC
Td (on/off) @ 25°C:
30ns/105ns
Test Condition:
480V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

STGB19NC60KT4 FAQ

1.How can I place an order for STGB19NC60KT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB19NC60KT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB19NC60KT4 reliable?

The price and inventory of STGB19NC60KT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB19NC60KT4 is usually 5 days.

3.What payment methods are accepted for STGB19NC60KT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB19NC60KT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB19NC60KT4?

STGB19NC60KT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB19NC60KT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB19NC60KT4?

For technical support, including STGB19NC60KT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB19NC60KT4 requirements.

6.How does Aetrix verify that STGB19NC60KT4 is sourced from the original manufacturer or authorized distributors?

All STGB19NC60KT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB19NC60KT4 meets industry standards.

7.What is the process for return or replacement of STGB19NC60KT4?

All STGB19NC60KT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGB19NC60KT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB19NC60KT4 part is unused and in its original packaging.

Return procedure for STGB19NC60KT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STGB19NC60KT4 Tags

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