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STMicroelectronics STGB19NC60WT4

Part No.:
STGB19NC60WT4
Manufacturer:
STMicroelectronics
Category:
Single IGBTs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSTGB19NC60WT4.pdf
Description:
IGBT 600V 40A 130W D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,367

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Product details

Overview

STGB19NC60WT4 from STMicroelectronics is a 19 A, 600 V ultra-fast IGBT in D²PAK (TO-263) package, fabricated using PowerMESH™ process for optimized switching speed and low VCE(sat). It delivers 2.1 V typical saturation voltage at 12 A/15 VGE, 53 nC total gate charge, and 0.95 °C/W junction-to-case thermal resistance-enabling high-efficiency motor drives and resonant SMPS.

For engineers reviewing the STGB19NC60WT4 datasheet, STGB19NC60WT4 pinout, STGB19NC60WT4 application, or STGB19NC60WT4 equivalent, key selection criteria include its low CRES/CIES ratio (26 pF / 1180 pF), 127 ns turn-off delay at 125°C, 416 μJ total switching loss at elevated temperature, and D²PAK tape-and-reel packaging for automated assembly.

Technical Context

This IGBT employs a trench-gated PowerMESH™ structure to simultaneously minimize conduction loss and switching energy. Its low reverse transfer capacitance (CRES = 26 pF) suppresses cross-conduction risk in bridge configurations, while the 1.8 V VCE(sat) at 125°C ensures stable on-state performance across industrial temperature ranges.

The device is characterized for hard-switching and resonant topologies, with validated SOA up to 125°C junction temperature and gate drive compatibility with ±20 V VGE ratings. Switching timing parameters-including 25 ns turn-on delay and 47 ns off-voltage rise time at 125°C-are specified under standardized inductive-load test conditions (VCC = 390 V, RG = 10 Ω).

Key Specifications

Parameter Value and Actual Design Meaning
VCES 600 V - Withstands full DC bus voltage in 400 V AC-input PFC and 3-phase inverter stages without derating.
IC (TC = 100°C) 22 A - Sustains continuous motor drive current at high ambient temperatures in enclosed industrial enclosures.
VCE(sat) (12 A, 125°C) 1.8 V - Limits conduction loss to ≤21.6 W at rated current, reducing heatsink requirements.
CRES/CIES 26 pF / 1180 pF - Ratio of 0.022 enables robust shoot-through immunity in half-bridge operation.
Ets (125°C) 416 μJ - Total switching energy at elevated temperature informs gate driver power and thermal design.
Rthj-case 0.95 °C/W - Enables direct mounting to PCB copper or compact heatsinks in space-constrained UPS modules.

Pinout & Package

D²PAK (TO-263) surface-mount package with exposed drain pad for thermal enhancement and mechanical robustness in high-vibration environments. Standard 3-pin configuration: Gate (pin 1), Collector (pin 2), Emitter (pin 3).

Pin/Terminal Circuit Role Design Meaning
Pin 1 Gate High-impedance MOS-controlled terminal requiring <200 nA leakage drive; connects to isolated gate driver output.
Pin 2 Collector Main power terminal tied to DC bus positive; electrically connected to exposed metal tab for thermal path.
Pin 3 Emitter Power return path and reference for gate drive; must be routed with low-inductance layout to minimize voltage spikes.

Key Features

Feature Design Value
Ultra-low CRES/CIES ratio 0.022 - Reduces Miller-induced false turn-on risk in high-dV/dt bridge circuits without added gate clamping.
PowerMESH™ trench gate Enables 2.1 V typical VCE(sat) at 25°C and 1.8 V at 125°C - maintains efficiency across full operating temperature range.
ECOPACK® lead-free construction Complies with JEDEC JESD97 marking and RoHS/REACH - supports environmentally compliant industrial manufacturing.
Optimized for resonant topologies Validated switching behavior up to 100 kHz with soft recovery characteristics - suitable for LLC and ZVS-PWM converters.

Applications

Industrial Motor Drives Uninterruptible Power Supplies (UPS)

Use Scenario: 3-phase inverter stage in 1–3 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT half-bridge modules controlling PWM-fed induction motors.

Use Value: 22 A continuous current rating at 100°C case temperature supports sustained torque delivery without forced air cooling.

Use Scenario: Online double-conversion UPS output inverter delivering clean 230 VAC sine wave during grid failure.

IC Role / Device Role / Timing Role: Fast-switching power switch in full-bridge inverter topology with synchronous rectification control.

Use Value: 47 ns off-voltage rise time at 125°C enables precise dead-time control to prevent shoot-through in high-reliability backup systems.

High-Frequency SMPS Active PFC Front-Ends

Use Scenario: Primary-side switch in 65–100 kHz resonant LLC converter for telecom rectifiers and server PSUs.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-optimized IGBT handling high peak currents with minimal turn-on loss.

Use Value: 53 nC total gate charge reduces driver IC power consumption and simplifies gate resistor selection for ZVS transition timing.

Use Scenario: Boost switch in continuous conduction mode (CCM) active PFC stage for 1–2 kW industrial power supplies.

IC Role / Device Role / Timing Role: High-voltage, high-current switching device operating at 50–100 kHz with low conduction loss priority.

Use Value: 1.8 V VCE(sat) at 125°C minimizes boost diode conduction loss and improves overall PFC efficiency above 96%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STGW19NC60W TO-247 package, higher Rthj-case (0.9 °C/W), same electrical specs Better suited for through-hole prototyping and higher-power heatsinking where D²PAK thermal limits are exceeded Select when board-level thermal management requires screw-mount heatsinks or >130 W dissipation capability.
FGH19N60UF Onsemi UltraFast IGBT; 2.2 V VCE(sat) typ., 45 nC Qg, TO-247 Slightly lower gate charge but higher saturation voltage; optimized for 20–50 kHz hard-switching rather than resonant use Prefer for cost-sensitive 48 V DC input inverters where gate drive simplicity outweighs thermal optimization.

Compared with STGW19NC60W and FGH19N60UF, STGB19NC60WT4 offers superior PCB integration via D²PAK tape-and-reel, lowest thermal resistance among the three, and best CRES/CIES ratio-making it optimal for space-constrained, high-frequency, thermally sensitive designs.

Availability

STGB19NC60WT4 is available at Aetrix Electronics and suitable for high-frequency motor controls, uninterruptible power supplies, and active PFC front-ends requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for STGB19NC60WT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This IGBT belongs to ST's PowerMESH™ ultra-fast IGBT product line, engineered specifically for high-efficiency, high-frequency switching in motor drives, UPS, and resonant SMPS-balancing low conduction loss with fast, controllable turn-off behavior.

FAQ

What is the maximum gate-emitter voltage rating for STGB19NC60WT4?

The absolute maximum gate-emitter voltage is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks gate oxide degradation over time, while negative bias below –10 V may cause excessive gate current during turn-off transients. The device is qualified for 15 V gate drive in all published switching waveforms.

Does STGB19NC60WT4 include an integrated anti-parallel diode?

No, STGB19NC60WT4 is a standalone IGBT die in D²PAK package without co-packaged diode. External freewheeling diodes-such as STTH12R06D or similar ultrafast 600 V types-must be used in inductive load applications. This separation allows independent optimization of diode recovery characteristics for specific topologies.

How does thermal resistance change between D²PAK and TO-220 versions of this IGBT?

STGB19NC60WT4 (D²PAK) has Rthj-case = 0.95 °C/W, while STGP19NC60W (TO-220) is rated at 0.90 °C/W. The slight difference reflects package geometry and solder interface quality: D²PAK relies on large-area PCB copper for heat spreading, whereas TO-220 uses discrete heatsink mounting. Both achieve comparable steady-state thermal performance when properly implemented.

Can STGB19NC60WT4 be used in zero-voltage switching (ZVS) circuits?

Yes-its low CRES (26 pF) and fast voltage rise time (22 ns typ. at 25°C) make it well-suited for ZVS operation in LLC and phase-shifted full-bridge topologies. Application notes AN4143 and AN2329 from ST confirm successful implementation up to 100 kHz with proper snubberless gate drive and resonant tank tuning.

STGB19NC60WT4 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
PowerMESH™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
40 A
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 12A
Power - Max:
130 W
Switching Energy:
81µJ (on), 125µJ (off)
Input Type:
Standard
Gate Charge:
53 nC
Td (on/off) @ 25°C:
25ns/90ns
Test Condition:
390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

STGB19NC60WT4 FAQ

1.How can I place an order for STGB19NC60WT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB19NC60WT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB19NC60WT4 reliable?

The price and inventory of STGB19NC60WT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB19NC60WT4 is usually 5 days.

3.What payment methods are accepted for STGB19NC60WT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB19NC60WT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB19NC60WT4?

STGB19NC60WT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB19NC60WT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB19NC60WT4?

For technical support, including STGB19NC60WT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB19NC60WT4 requirements.

6.How does Aetrix verify that STGB19NC60WT4 is sourced from the original manufacturer or authorized distributors?

All STGB19NC60WT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB19NC60WT4 meets industry standards.

7.What is the process for return or replacement of STGB19NC60WT4?

All STGB19NC60WT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGB19NC60WT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB19NC60WT4 part is unused and in its original packaging.

Return procedure for STGB19NC60WT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STGB19NC60WT4 Tags

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