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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB20H60DF

Name: STGB20H60DF
Brand: STMicroelectronics
SKU: STGB20H60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB20H60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGB20H60DF.pdf

Description:: IGBT 600V 40A 167W D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGB20H60DF from STMicroelectronics is a 600 V, 20 A trench gate field-stop IGBT with integrated soft/fast recovery antiparallel diode in D²PAK (TO-263) package. It delivers 1.6 V typical V_CE(sat) at 20 A/25 °C, 90 ns typical t_rr, and 3 µs short-circuit withstand time - optimized for high-frequency PFC converters and industrial motor drives requiring robust paralleling and thermal stability up to 175 °C junction temperature.

For engineers reviewing the STGB20H60DF datasheet, STGB20H60DF pinout, STGB20H60DF application, or STGB20H60DF equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient, R_thJC = 0.9 °C/W, 115 nC total gate charge, and validated operation under 400 V/20 A inductive switching with 10 Ω gate resistance.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction loss (low V_CE(sat)) and switching loss (fast t_on/t_off, low E_on/E_off). Its slightly positive V_CE(sat) temperature coefficient enables stable current sharing during parallel operation without external current-balancing resistors.

The monolithic integration of a soft-recovery antiparallel diode eliminates discrete diode placement complexity and ensures matched thermal behavior. Diode parameters - including 1.8 V typical V_F at 20 A/25 °C and 110 nC Q_rr - are characterized under identical test conditions as the IGBT, enabling accurate loss modeling for bridge-leg designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage; supports 400 V DC-link PFC and UPS applications with 50 % safety margin.
I_C (T_C = 100 °C)	20 A - Continuous rated current at 100 °C case temperature; defines usable output power in thermally constrained enclosures.
V_CE(sat) (20 A, 25 °C)	1.6 V typical - Directly determines conduction loss (P_cond ≈ I_C × V_CE(sat)) and thermal rise in steady-state operation.
t_sc	3–5 µs - Short-circuit withstand time at ≤360 V and 15 V gate drive; enables robust protection response in motor control fault conditions.
R_thJC (IGBT)	0.9 °C/W - Junction-to-case thermal resistance for D²PAK; enables precise heatsink sizing using measured case temperature.
Q_g	115 nC - Total gate charge; determines required gate driver peak current (I_pk ≥ Q_g/t_rise) for 42.5 ns t_d(on).
t_rr (20 A)	90 ns typical - Reverse recovery time of integrated diode; sets minimum dead-time requirement to prevent shoot-through in half-bridge topologies.

Pinout & Package

D²PAK (TO-263) package with isolated tab (pin 3), 3-pin surface-mount outline per Figure 28 in DS9293 Rev 6. Tab is electrically connected to collector (C); pin 1 = gate (G), pin 2 = emitter (E).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate (G)	Control terminal; requires 15 V ±20 V rating and 115 nC charge delivery for full enhancement; sensitive to ESD.
Pin 2	Emitter (E)	Reference node for gate drive and current sensing; must be low-inductance path to minimize V_GE noise during switching.
Pin 3 (Tab)	Collector (C)	Main power terminal; electrically tied to heatsink; isolation voltage rating 2.5 kV RMS per datasheet Table 1.

Key Features

Feature	Design Value
Trench gate field-stop structure	Enables simultaneous optimization of V_CE(sat) (1.6 V) and switching speed (t_on + t_off < 250 ns), reducing total losses in 20–100 kHz converters.
Positive V_CE(sat) tempco	Ensures inherent current balancing when multiple devices operate in parallel - no external emitter resistors needed for stable load sharing.
Soft-recovery antiparallel diode	110 nC Q_rr and 2.4 A I_rrm minimize voltage overshoot and EMI during commutation, critical for EMI-compliant PFC designs.
Short-circuit rated (3–5 µs)	Supports hardware-based overcurrent protection with fixed delay; eliminates need for ultra-fast current sensing in motor drive inverters.
R_thJC = 0.9 °C/W	Enables higher power density vs TO-220FP (R_thJC = 4 °C/W); reduces heatsink size by >75 % for same thermal budget at 20 A continuous.

Applications

Industrial Motor Drives

Single-Phase PFC Converters

Use Scenario: 3 kW variable-speed drive for HVAC compressors operating at 16 kHz switching frequency with 400 V DC-link.

IC Role / Device Role / Timing Role: Main switch in inverter leg; handles 20 A RMS motor phase current with synchronized gate timing to minimize torque ripple.

Use Value: 1.6 V V_CE(sat) and 0.9 °C/W R_thJC reduce heatsink volume by 40 % versus legacy 600 V IGBTs while maintaining 175 °C safe junction operation.

Use Scenario: Active boost PFC stage in 2 kVA uninterruptible power supply accepting 85–264 V AC input.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; driven at 65 kHz with precise dead-time control.

Use Value: 90 ns diode t_rr and soft recovery enable <150 ns dead-time, increasing efficiency by 0.8 % at full load versus standard FRD alternatives.

Uninterruptible Power Supplies (UPS)

Industrial Welding Inverters

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output with battery backup and 94 % peak efficiency.

IC Role / Device Role / Timing Role: Inverter-stage switch handling bidirectional energy flow; subjected to repetitive short-circuit events during battery-mode transitions.

Use Value: 5 µs short-circuit withstand time allows reliable operation under IEEE 1159-defined surge conditions without desaturation circuitry.

Use Scenario: 12 kW IGBT inverter for arc welding equipment requiring rapid current slew rates (>1000 A/µs) and thermal cycling resilience.

IC Role / Device Role / Timing Role: Primary power switch modulating 300 A peak output; operated with 10 Ω gate resistor to control di/dt and EMI.

Use Value: Tight parameter distribution (±10 % V_CE(sat)) ensures consistent arc ignition across multi-device modules without individual calibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 600 V IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP20H60DF	Same die, TO-220 package; R_thJC = 4 °C/W (vs 0.9 °C/W); no isolation between tab and leads.	Requires insulated mounting hardware; unsuitable for surface-mount PCBs; lower power density limits use in compact PFC modules.	Select when through-hole assembly, lower cost, or mechanical robustness outweigh thermal performance needs.
IXYS IXGN20N60B3	600 V/20 A, but V_CE(sat) = 2.2 V typ; t_sc = 10 µs; Q_g = 140 nC; no integrated diode.	Requires external diode with separate thermal path; higher conduction loss increases heatsink requirements by ~35 % at 20 A.	Choose only if longer short-circuit time is mandatory and board space permits discrete diode layout.

Compared with STGP20H60DF, STGB20H60DF offers 4.4× lower thermal resistance and surface-mount compatibility; versus IXGN20N60B3, it delivers 38 % lower conduction loss and eliminates diode matching uncertainty - critical for high-efficiency, space-constrained industrial converters.

Availability

STGB20H60DF is available at Aetrix Electronics and suitable for industrial motor control, single-phase PFC converters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles and lifecycle continuity.

Supply support for STGB20H60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGB20H60DF belongs to ST's H-series IGBT portfolio, engineered specifically for high-frequency, high-efficiency power conversion in industrial motor drives and switched-mode power supplies where thermal stability and paralleling capability are essential.

FAQ

What is the maximum recommended gate resistor value for STGB20H60DF in a 65 kHz PFC application?

For 65 kHz operation with 20 A peak current, ST recommends R_G = 10 Ω (per Figure 22 and Table 5). This value balances switching loss (E_on + E_off = 470 µJ at 25 °C) and EMI control. Increasing R_G beyond 15 Ω raises total switching energy by >25 % and risks exceeding thermal limits at full load.

Does STGB20H60DF require a negative gate turn-off voltage?

No. The device is fully enhanced at V_GE = 15 V and safely blocked at V_GE = 0 V. ST specifies ±20 V absolute maximum gate-emitter voltage, but gate drive circuits may operate with 0 V to 15 V swing. Negative bias is unnecessary for reliable turn-off and adds complexity without benefit.

Can STGB20H60DF be paralleled with STGF20H60DF in the same design?

No - STGF20H60DF uses TO-220FP packaging with different thermal impedance (R_thJC = 4 °C/W) and mounting mechanics. Paralleling requires identical package type, thermal path, and layout symmetry to ensure current sharing. Only STGB20H60DF units should be paralleled, leveraging their positive V_CE(sat) temperature coefficient.

What is the insulation voltage rating between the D²PAK tab and PCB ground plane?

The D²PAK package provides 2.5 kV RMS insulation withstand voltage from all three leads (including the isolated tab) to an external heat sink (DS9293 Table 1). When mounted on a PCB with appropriate creepage/clearance (≥4.5 mm), the tab-to-ground isolation meets IEC 60950-1 reinforced insulation requirements for 400 V AC systems.

STGB20H60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 80 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 20A

Power - Max:: 167 W

Switching Energy:: 209µJ (on), 261µJ (off)

Input Type:: Standard

Gate Charge:: 115 nC

Td (on/off) @ 25°C:: 42.5ns/177ns

Test Condition:: 400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr):: 90 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STGB20H60DF FAQ

1.How can I place an order for STGB20H60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB20H60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB20H60DF reliable?

The price and inventory of STGB20H60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB20H60DF is usually 5 days.

3.What payment methods are accepted for STGB20H60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB20H60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB20H60DF?

STGB20H60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB20H60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB20H60DF?

For technical support, including STGB20H60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB20H60DF requirements.

6.How does Aetrix verify that STGB20H60DF is sourced from the original manufacturer or authorized distributors?

All STGB20H60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB20H60DF meets industry standards.

7.What is the process for return or replacement of STGB20H60DF?

All STGB20H60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGB20H60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB20H60DF part is unused and in its original packaging.

Return procedure for STGB20H60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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