STMicroelectronics STGB20H65FB2

Overview

STGB20H65FB2 from STMicroelectronics is a 650 V, 20 A high-speed trench gate field-stop IGBT in D²PAK package, optimized for fast-switching PFC, solar inverters, and EV DC fast charging. It delivers low V_CE(sat) = 1.65 V (typ.) at 20 A/25 °C, minimized tail current, positive V_CE(sat) temperature coefficient, and R_thJC = 1.02 °C/W for thermal reliability in high-power welding and UPS systems.

For engineers reviewing the STGB20H65FB2 datasheet, STGB20H65FB2 pinout, STGB20H65FB2 application, or STGB20H65FB2 equivalent, key selection criteria include conduction loss at 175 °C junction, switching energy (E_on = 265 µJ / E_off = 214 µJ @ 25 °C), gate charge (Q_g = 56 nC), and safe operating area up to 100 µs pulse width.

Technical Context

This IGBT employs ST's proprietary HB2-series trench gate field-stop structure, engineered to reduce conduction losses at low-to-moderate currents while lowering total switching energy-especially turn-off energy including tail current contribution. Its positive V_CE(sat) temperature coefficient enables inherent current sharing in parallel configurations.

The device operates with ±20 V gate-emitter voltage rating and supports robust switching under V_CC = 400–520 V, I_C = 20 A, and R_G = 10 Ω conditions. Thermal design is enabled by validated junction-to-case resistance (1.02 °C/W) and defined FSOA up to T_J = 175 °C across pulse widths from 1 µs to 1 ms.

Key Specifications

Pinout & Package

D²PAK (TO-263) package with isolated tab (collector), 3-pin outline: G (pin 1), C (pin 2 + tab), E (pin 3). The metal tab is electrically connected to the collector and serves as primary thermal path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 650 V IGBT applications.

Compared with IXGN20N60B3 and IKP20N65ES5, STGB20H65FB2 offers superior conduction efficiency at 20 A, lower thermal resistance, and specifically minimized tail current-making it the optimal choice for high-frequency, high-temperature applications demanding both low E_off and stable V_CE(sat) behavior across -40 to 175 °C.

Availability

STGB20H65FB2 is available at Aetrix Electronics and suitable for welding power supplies, solar string inverters, and EV DC fast charging stations requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial-grade production.

Supply support for STGB20H65FB2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The HB2-series IGBTs are part of ST's high-efficiency power switching portfolio, developed specifically to address efficiency and thermal challenges in next-generation renewable energy and electrified transportation systems.

FAQ

What is the maximum continuous collector current at 100 °C case temperature?

The STGB20H65FB2 supports 25 A continuous collector current at T_C = 100 °C, as specified in Table 1 of DS13362 Rev 2. This rating assumes proper heatsinking and adherence to the derating curve in Figure 2, where current decreases linearly from 40 A at 25 °C to 25 A at 100 °C.

Does this IGBT require a negative gate voltage for reliable turn-off?

No. STGB20H65FB2 is rated for V_GE = ±20 V, but stable turn-off is achieved with 0 V gate bias. A negative voltage (e.g., –5 V) is optional and used only to improve noise immunity in high-dV/dt environments; it is not required for functional operation per datasheet test conditions.

Can STGB20H65FB2 be paralleled with identical units without external emitter resistors?

Yes. Its positive V_CE(sat) temperature coefficient ensures inherent current balancing across paralleled devices. ST's application note AN4729 confirms that matched HB2-series IGBTs can be paralleled with shared gate drive and Kelvin emitter routing-no external emitter resistors needed for static or dynamic balancing.

What is the recommended gate resistor value for 400 V, 20 A switching at 50 kHz?

For V_CC = 400 V, I_C = 20 A, and f_sw = 50 kHz, ST recommends R_G = 10 Ω (per Figure 19 and Table 5). This value balances switching speed (t_d(off) ≈ 98 ns at 175 °C) and voltage overshoot, while keeping gate drive power within 2 W for typical 15 V logic-level drivers.