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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB20V60DF

Name: STGB20V60DF
Brand: STMicroelectronics
SKU: STGB20V60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB20V60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGB20V60DF.pdf

Description:: IGBT 600V 40A 167W D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGB20V60DF from STMicroelectronics is a 600 V, 20 A very high-speed trench gate field-stop IGBT with integrated ultrafast soft-recovery antiparallel diode in D²PAK (TO-263) package. It delivers V_CE(sat) = 1.8 V (typ.) at I_C = 20 A, t_d(off) = 149 ns, and t_rr = 40 ns (T_J = 25 °C), enabling high-efficiency operation in photovoltaic inverters and high-frequency PFC stages.

For engineers reviewing the STGB20V60DF datasheet, STGB20V60DF pinout, STGB20V60DF application, or STGB20V60DF equivalent, key selection criteria include its tail-less turn-off behavior, positive V_CE(sat) temperature coefficient for safe paralleling, low R_thJC = 0.9 °C/W (IGBT), and tight parameter distribution across production lots.

Technical Context

This IGBT employs ST's proprietary trench gate + field-stop structure to simultaneously minimize conduction and switching losses-optimized for >20 kHz converters. Its integrated diode features soft reverse recovery (Q_rr = 320 nC, dI_rr/dt = 910 A/μs) and low V_F = 1.7 V (typ.) at I_F = 20 A, reducing system EMI and diode-induced voltage spikes.

The device operates up to T_J = 175 °C with guaranteed safe paralleling due to positive V_CE(sat) temperature coefficient and tight parameter spread. Dynamic characteristics are characterized under standardized inductive-load conditions (V_CC = 400 V, I_C = 20 A, V_GE = 15 V, R_g = 10 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 600 V without breakdown, suitable for 400 V nominal PV and UPS systems.
I_C (T_C = 100 °C)	20 A - Continuous collector current rating at case temperature of 100 °C, defining thermal design margin in compact heatsinks.
V_CE(sat) (T_J = 25 °C)	1.8 V (typ.) - Low saturation voltage reduces conduction loss and junction heating during on-state, improving efficiency at full load.
t_d(off)	149 ns - Short turn-off delay enables precise PWM timing control and supports switching frequencies beyond 50 kHz.
Q_rr	320 nC (T_J = 25 °C) - Low reverse recovery charge minimizes diode commutation loss and associated voltage overshoot in bridge topologies.
R_thJC (IGBT)	0.9 °C/W - Low thermal resistance from junction to case allows effective heat transfer to heatsink, supporting high-power density designs.
E_off	130 μJ - Measured turn-off energy under standard test conditions, directly impacting total switching loss and thermal management requirements.

Pinout & Package

D²PAK (TO-263) surface-mount package with isolated tab (pin 3), optimized for automated assembly and thermal performance on PCB copper planes.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring ≤±20 V drive; low Q_g = 116 nC enables fast, low-loss switching with moderate gate driver strength.
2	Emitter	Reference node for gate drive and current sensing; low-inductance layout critical to suppress voltage spikes during fast switching.
3 (Tab)	Collector	High-current power terminal electrically connected to the metal tab; must be soldered to large copper area for thermal and electrical integrity.

Key Features

Feature	Design Value
Tail-less switching off	Eliminates slow current decay phase, reducing E_off and enabling cleaner zero-voltage switching (ZVS) transitions.
Very fast soft recovery antiparallel diode	trr = 40 ns, dI_rr/dt = 910 A/μs - Minimizes reverse recovery noise and stress on complementary switch in half-bridge configurations.
Positive V_CE(sat) temperature coefficient	Ensures inherent current sharing when multiple devices operate in parallel, eliminating need for external emitter resistors.
Tight parameters distribution	Guaranteed V_CE(sat), Q_g, and t_rr tolerances enable predictable system-level performance and simplified thermal derating.
Max T_J = 175 °C	Enables operation in high-ambient environments (e.g., enclosed solar inverters) without forced air cooling.

Applications

Photovoltaic Inverters

Uninterruptible Power Supply (UPS)

Use Scenario: DC–AC conversion stage in string inverters operating at 20–50 kHz switching frequency with 400–600 V DC input.

IC Role / Device Role / Timing Role: Main switching device in three-phase inverter leg, handling bidirectional current flow via integrated diode during freewheeling.

Use Value: Tail-less turn-off and low E_off reduce thermal stress at high ambient temperatures, extending field lifetime in outdoor enclosures.

Use Scenario: Online double-conversion UPS output inverter delivering clean 50/60 Hz sine wave with <1% THD under nonlinear loads.

IC Role / Device Role / Timing Role: High-side/low-side switch in full-bridge topology, synchronized with DSP-controlled PWM to regulate output voltage and frequency.

Use Value: Tight V_CE(sat) distribution ensures balanced current sharing across parallel legs, maintaining output stability during overload transients.

Power Factor Correction (PFC)

Welding Equipment

Use Scenario: Boost PFC stage in industrial SMPS, operating in continuous conduction mode (CCM) at 65–100 kHz with 380–400 V DC link.

IC Role / Device Role / Timing Role: Active switch controlling inductor current; integrated diode conducts during boost diode freewheel interval.

Use Value: Low Q_rr and soft recovery prevent voltage overshoot across MOSFET/IGBT in hybrid PFC designs, reducing snubber losses.

Use Scenario: Inverter-based arc welding power supply generating 10–300 A DC output with rapid current slew rates (>100 A/ms).

IC Role / Device Role / Timing Role: Primary inverter switch modulating high-current DC bus to produce controlled welding current waveform.

Use Value: R_thJC = 0.9 °C/W and 175 °C max T_J support high-duty-cycle operation without thermal shutdown during prolonged weld cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW20V60DF	Same die, TO-247 package; R_thJC = 0.55 °C/W (lower), but through-hole mounting and larger footprint.	Better thermal performance in high-power discrete designs; unsuitable for space-constrained SMT layouts.	Select when board-level thermal resistance dominates and manual assembly or heatsink clamping is preferred.
IXYS IXGN200N60B3	600 V/200 A rated, but higher V_CE(sat) = 2.3 V (typ.), slower t_d(off) = 220 ns, no integrated diode.	Requires external ultrafast diode; better suited for lower-frequency, higher-current motor drives than high-frequency PFC.	Choose only if higher current headroom and discrete diode optimization outweigh efficiency and layout complexity penalties.

Compared with STGW20V60DF, STGB20V60DF trades 0.35 °C/W higher junction-to-case thermal resistance for SMT manufacturability and reduced PCB area; versus IXGN200N60B3, it offers superior high-frequency efficiency and integrated diode simplicity at lower peak current capability.

Availability

STGB20V60DF is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supplies, and welding equipment requiring stable component supply across multi-year production cycles.

Supply support for STGB20V60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for industrial, automotive, and power applications.

STGB20V60DF belongs to ST's "V-series" high-speed IGBT family, engineered specifically to balance conduction and switching losses for maximum efficiency in very high frequency (≥20 kHz) power converters.

FAQ

What is the maximum recommended gate resistor value for STGB20V60DF in a 40 kHz PFC application?

A gate resistor of 10 Ω is validated in the datasheet for V_CC = 400 V, I_C = 20 A, and T_J = 175 °C. At 40 kHz, this value balances switching loss (E_on + E_off = 640 μJ) and EMI; increasing beyond 15 Ω raises t_d(on)/t_d(off) disproportionately and risks shoot-through in bridge configurations.

Does STGB20V60DF require a negative gate voltage for reliable turn-off?

No. The device is fully specified for V_GE = 0 V turn-off and exhibits robust immunity to dv/dt-induced false triggering. A –5 V to 0 V gate bias is optional for enhanced noise immunity in high-dv/dt environments but not required for functional reliability per datasheet test conditions.

Can STGB20V60DF be paralleled without emitter resistors?

Yes. Its positive V_CE(sat) temperature coefficient and tight parameter distribution (±5% V_CE(sat)) enable stable current sharing across parallel devices without external balancing resistors, provided layout symmetry and thermal coupling are maintained.

What is the minimum PCB copper area required for thermal management at 20 A continuous current?

For T_C ≤ 100 °C at I_C = 20 A, a minimum 10 cm² of 2-oz copper connected to the tab (pin 3) is required per the thermal simulation data in Figure 2. This assumes still air and no additional heatsink; forced airflow reduces required area by ~40%.

STGB20V60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 80 A

Vce(on) (Max) @ Vge, Ic:: 2.2V @ 15V, 20A

Power - Max:: 167 W

Switching Energy:: 200µJ (on), 130µJ (off)

Input Type:: Standard

Gate Charge:: 116 nC

Td (on/off) @ 25°C:: 38ns/149ns

Test Condition:: 400V, 20A, 15V

Reverse Recovery Time (trr):: 40 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STGB20V60DF FAQ

1.How can I place an order for STGB20V60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB20V60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB20V60DF reliable?

The price and inventory of STGB20V60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB20V60DF is usually 5 days.

3.What payment methods are accepted for STGB20V60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB20V60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB20V60DF?

STGB20V60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB20V60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB20V60DF?

For technical support, including STGB20V60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB20V60DF requirements.

6.How does Aetrix verify that STGB20V60DF is sourced from the original manufacturer or authorized distributors?

All STGB20V60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB20V60DF meets industry standards.

7.What is the process for return or replacement of STGB20V60DF?

All STGB20V60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGB20V60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB20V60DF part is unused and in its original packaging.

Return procedure for STGB20V60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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