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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB30H60DF

Name: STGB30H60DF
Brand: STMicroelectronics
SKU: STGB30H60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB30H60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGB30H60DF.pdf

Description:: IGBT 600V 60A 260W D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,681

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Product details

Overview

STGB30H60DF from STMicroelectronics is a 600 V, 30 A trench gate field-stop IGBT with integrated ultrafast soft-recovery antiparallel diode in TO-220 TAB package. It delivers 2.4 V V_CE(sat) at 30 A/15 V_GE, 105 nC total gate charge, and 3–6 µs short-circuit withstand time, enabling high-efficiency PFC and inverter stages in UPS systems.

For engineers reviewing the STGB30H60DF datasheet, STGB30H60DF pinout, STGB30H60DF application, or STGB30H60DF equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, low R_thJC of 0.58 °C/W, and diode trr of 110 ns at 25 °C - all critical for thermal management and switching loss optimization in high-frequency converters.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction and switching losses, achieving 0.35 mJ E_on and 0.40 mJ E_off at 400 V/30 A with 10 Ω gate resistance. Its V_GE(th) of 5–7 V ensures robust noise immunity while supporting standard 15 V gate drive.

The co-packaged diode features soft reverse recovery (Q_rr = 136 nC, I_rrm = 2.5 A) and exhibits reduced trr drift at elevated temperature (190 ns at 175 °C), minimizing voltage overshoot and EMI in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - supports DC bus voltages up to 400 V nominal with 50% safety margin in industrial PFC and inverter designs.
I_C (T_C = 100 °C)	30 A - continuous current rating at real-world heatsink temperatures, defining usable output power in forced-air-cooled UPS modules.
V_CE(sat)	2.4 V @ 30 A/15 V_GE/25 °C - directly determines conduction loss (P_cond ≈ 72 W at full load), impacting thermal design and efficiency.
t_sc	3–6 µs - enables reliable short-circuit protection without external desaturation detection in motor drives and inverters.
R_thJC (IGBT)	0.58 °C/W - defines junction-to-case thermal gradient; enables 175 °C T_J operation with ≤102 °C case temperature at 260 W dissipation.
trr (diode)	110 ns @ 400 V/30 A/100 A/µs - limits diode reverse recovery dv/dt stress on IGBT during commutation, reducing snubber requirements.
Q_g	105 nC - determines gate driver peak current demand (I_pk ≥ 10.5 A for 10 ns rise time), guiding driver IC selection.

Pinout & Package

TO-220 TAB package with isolated mounting tab (electrically connected to collector). Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Collector (tab), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Gate	Control terminal requiring 15 V drive; 105 nC Q_g mandates low-impedance gate driver path to minimize switching loss.
Pin 2 (center/tab)	Collector	Main power terminal tied to heatsink; electrically active and thermally coupled - requires insulating pad if heatsink is grounded.
Pin 3 (right)	Emitter	Power return and reference for gate drive; low-inductance layout essential to avoid shoot-through during fast switching.

Key Features

Feature	Design Value
Trench gate field-stop structure	Optimizes trade-off between V_CE(sat) and switching speed - achieves 2.4 V saturation with 160 ns total switching time (td(on)+tr+td(off)+tf).
Positive V_CE(sat) temperature coefficient	Enables stable current sharing in parallel configurations without external current-balancing resistors or active control.
Ultrafast soft-recovery antiparallel diode	Reduces EMI and voltage spikes during freewheeling; 136 nC Q_rr and 2.5 A I_rrm limit reverse recovery energy dissipation.
Short-circuit rated	Withstands 3–6 µs at V_CC ≤ 360 V and V_GE = 15 V - allows time for protection circuitry to respond before thermal runaway.
Low thermal resistance (R_thJC)	0.58 °C/W for IGBT die enables compact thermal design - 102 °C case temperature at 30 A/100 °C ambient with 260 W total dissipation.

Applications

Industrial UPS Inverters

Three-Phase Motor Drives

Use Scenario: Bidirectional DC-AC conversion in online double-conversion UPS systems operating at 16–20 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device in three-phase IGBT bridge; handles 30 A RMS output current with soft-recovery diode providing freewheeling path.

Use Value: 0.75 mJ total switching energy at 400 V/30 A reduces heatsink size by ~22% versus legacy 600 V IGBTs with comparable R_thJC.

Use Scenario: Voltage-source inverter (VSI) stage in HVAC compressors and industrial pumps with field-oriented control.

IC Role / Device Role / Timing Role: High-side/low-side switch in six-pack topology; leverages tight parameter distribution for consistent phase current balancing.

Use Value: 175 °C max junction temperature and 3 µs short-circuit rating enable robust operation under overload and stall conditions without derating.

Active PFC Front-Ends

Solar Microinverters

Use Scenario: Boost PFC stage in server PSUs and telecom rectifiers operating at 65–100 kHz with >96% efficiency target.

IC Role / Device Role / Timing Role: Fast-switching boost switch; integrated diode eliminates need for discrete SiC Schottky, simplifying layout and reducing BOM count.

Use Value: 110 ns diode trr and 2.0 V forward drop at 30 A reduce conduction + recovery losses by 18% versus standard FRD alternatives.

Use Scenario: Single-phase DC-AC inversion in residential solar microinverters with transformerless topology and 50 kHz switching.

IC Role / Device Role / Timing Role: Half-bridge leg switch; utilizes positive V_CE(sat) coefficient for inherent current sharing across parallel units in modular designs.

Use Value: 0.58 °C/W R_thJC supports 60 A pulsed current capability (I_CP = 120 A), enabling overcurrent headroom during grid fault ride-through.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 600 V IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP30H60DF	Same die, TO-220 package with non-isolated tab; identical electrical specs but lower creepage/clearance vs. STGB30H60DF.	Requires insulated mounting hardware in grounded-heatsink systems; unsuitable where isolation is mandated by safety standards.	Select when cost sensitivity outweighs isolation requirement and mechanical mounting permits direct tab grounding.
FGA3060G2	Onsemi 600 V/30 A IGBT with 2.2 V V_CE(sat), 120 nC Q_g, and no integrated diode - requires external ultrafast diode.	Lacks co-packaged diode; increases PCB area, layout complexity, and parasitic inductance in high-di/dt applications.	Prefer only when diode replacement is acceptable and gate drive can support higher Q_g without compromising switching speed.

Compared with STGP30H60DF, STGB30H60DF provides guaranteed electrical isolation between tab and collector, critical for Class I safety compliance; versus FGA3060G2, it eliminates diode selection and layout uncertainty while delivering lower system-level EMI through matched die coupling.

Availability

STGB30H60DF is available at Aetrix Electronics and suitable for industrial UPS inverters, active PFC front-ends, and solar microinverters requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for STGB30H60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STGB30H60DF belongs to ST's H-series high-speed IGBT portfolio, engineered specifically for high-frequency (>20 kHz) power conversion in UPS, PFC, and motor control systems where efficiency, reliability, and thermal performance are critical.

FAQ

What is the maximum allowable gate-emitter voltage for STGB30H60DF?

The absolute maximum V_GE is ±20 V per datasheet DS8709 Rev 4. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure fast, robust switching and prevent Miller-induced false turn-on.

Does STGB30H60DF require a negative gate voltage for reliable turn-off?

No negative gate voltage is mandatory, but applying –5 V to –10 V during turn-off improves noise immunity and reduces turn-off time by 12–18% versus 0 V gate bias. The device's V_GE(th) of 5–7 V provides sufficient margin against spurious turn-on even with 0 V turn-off in low-noise environments.

How does the integrated diode differ from standard FRDs in terms of recovery behavior?

The integrated diode features soft reverse recovery with controlled I_rrm (2.5 A) and low Q_rr (136 nC), resulting in gradual current decay rather than abrupt collapse. This minimizes voltage overshoot and EMI generation compared to fast-recovery diodes with hard recovery characteristics and higher I_rrm.

Can STGB30H60DF be paralleled without external emitter resistors?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution (±10% V_CE(sat) spread) enable stable current sharing across parallel devices. However, matched gate drive impedance and symmetrical PCB layout remain essential to avoid dynamic imbalance during switching transitions.

STGB30H60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 30A

Power - Max:: 260 W

Switching Energy:: 350µJ (on), 400µJ (off)

Input Type:: Standard

Gate Charge:: 105 nC

Td (on/off) @ 25°C:: 50ns/160ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: 110 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STGB30H60DF FAQ

1.How can I place an order for STGB30H60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB30H60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB30H60DF reliable?

The price and inventory of STGB30H60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB30H60DF is usually 5 days.

3.What payment methods are accepted for STGB30H60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB30H60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB30H60DF?

STGB30H60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB30H60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB30H60DF?

For technical support, including STGB30H60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB30H60DF requirements.

6.How does Aetrix verify that STGB30H60DF is sourced from the original manufacturer or authorized distributors?

All STGB30H60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB30H60DF meets industry standards.

7.What is the process for return or replacement of STGB30H60DF?

All STGB30H60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGB30H60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB30H60DF part is unused and in its original packaging.

Return procedure for STGB30H60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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