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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB30H60DFB

Name: STGB30H60DFB
Brand: STMicroelectronics
SKU: STGB30H60DFB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB30H60DFB

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGB30H60DFB.pdf

Description:: TRENCH GATE FIELD-STOP IGBT, HB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGB30H60DFB from STMicroelectronics is a 600 V, 30 A trench gate field-stop IGBT with integrated ultra-fast soft-recovery antiparallel diode in D²PAK (TO-263) package. It delivers 1.55 V typical V_CE(sat) at 30 A/25 °C, 53 ns typ. reverse recovery time, and 0.58 °C/W junction-to-case thermal resistance - optimized for photovoltaic inverters and high-frequency DC-AC converters operating up to 20 kHz.

For engineers reviewing the STGB30H60DFB datasheet, STGB30H60DFB pinout, STGB30H60DFB application, or STGB30H60DFB equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, minimized tail current for reduced turn-off loss, and tight parameter distribution enabling consistent system-level efficiency across production batches.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction and switching losses. Its dynamic characteristics are characterized under standardized inductive load conditions: V_CC = 400 V, I_C = 30 A, V_GE = 15 V, R_G = 10 Ω, with turn-on delay of 35 ns and turn-off delay of 158 ns at T_J = 175 °C.

The co-packaged diode exhibits soft recovery behavior with Q_rr = 384 nC (T_J = 25 °C) and dI_rr/dt = 788 A/µs, minimizing voltage overshoot and EMI in hard-switched topologies. Thermal design is supported by validated R_thJC values: 0.58 °C/W for IGBT and 2.08 °C/W for diode.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands full DC bus voltage in 400–600 V PV string applications without derating.
I_C (T_C = 100 °C)	30 A - Sustains continuous output current at elevated heatsink temperatures typical in enclosed solar inverters.
V_CE(sat) (T_J = 175 °C)	1.75 V - Low conduction loss enables >98.5% peak efficiency in 10–20 kHz three-phase inverters.
E_off (T_J = 175 °C)	572 µJ - Reduced tail current lowers turn-off energy versus standard HB-series IGBTs, easing thermal management.
t_rr (T_J = 25 °C)	53 ns - Ultra-fast diode recovery minimizes commutation losses and snubber requirements in synchronous rectification.
R_thJC (IGBT)	0.58 °C/W - Enables direct mounting to aluminum heatsinks with ≤1.2 K/W total thermal path for 3 kW designs.
Q_g	149 nC - Gate charge supports robust 15 V drive with <1.5 W average gate power at 20 kHz switching.

Pinout & Package

D²PAK (TO-263) surface-mount package with isolated tab (pin 3), 3-pin configuration, ECOPACK® compliant, rated for 175 °C maximum junction temperature.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 15 V logic-level gate drive; requires 149 nC total charge for full enhancement.
2 (Emitter)	Power return reference	Serves as common emitter node for IGBT and antiparallel diode; must be low-inductance layout.
3 (Tab / Collector)	High-side power output	Exposed metal tab is electrically connected to collector; provides primary thermal path to heatsink.

Key Features

Feature	Design Value
Minimized tail current	Reduces E_off by 35% vs. prior-generation HB IGBTs, lowering thermal stress during hard switching.
Positive V_CE(sat) tempco	Enables stable current sharing when paralleling ≥2 devices without external emitter resistors.
Tight parameter distribution	±5% V_CE(sat) and ±8% t_rr tolerance ensures predictable system efficiency across manufacturing lots.
Very fast soft recovery diode	53 ns t_rr with <15 A I_rrm limits dv/dt-induced shoot-through risk in bridge-leg configurations.
Low R_thJC (IGBT)	0.58 °C/W allows 260 W dissipation at ΔT = 150 K - sufficient for 3.5 kW inverter stage at 100 °C case.

Applications

Photovoltaic String Inverter

UPS Inverter Stage

Use Scenario: DC-AC conversion in 3–5 kW residential solar inverters with MPPT tracking and transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT bridge; operates at 16–20 kHz PWM with sinusoidal current output.

Use Value: 1.55 V V_CE(sat) and 572 µJ E_off at 175 °C enable >98.2% weighted efficiency per IEC 62109-1.

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave during grid outage.

IC Role / Device Role / Timing Role: Output stage IGBT in H-bridge inverter; switches at 8–12 kHz with zero-voltage switching assist.

Use Value: Soft-recovery diode eliminates need for external anti-parallel SiC Schottky, reducing BOM count and layout area.

Induction Heating Half-Bridge

Motor Drive Inverter Module

Use Scenario: 10–30 kW resonant induction heating systems for industrial metal processing.

IC Role / Device Role / Timing Role: High-frequency half-bridge switch operating at 20–50 kHz with ZVS transition.

Use Value: 0.58 °C/W R_thJC and 175 °C T_Jmax support continuous 25 A RMS current without forced air cooling.

Use Scenario: 7.5 kW servo drive for CNC machinery requiring precise torque control and regenerative braking.

IC Role / Device Role / Timing Role: Lower-leg switch in 6-pack inverter module; handles bidirectional current during regeneration.

Use Value: Tight V_CE(sat) distribution ensures matched conduction loss across all six devices, improving current balance accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP30H60DFB	Same die, TO-220 through-hole package; R_thJC = 0.58 °C/W identical, but higher R_thJA (62.5 vs. 45 °C/W).	Preferred for prototyping, low-volume industrial drives where manual assembly or heatsink clamping is used.	Select when mechanical robustness and serviceability outweigh surface-mount density requirements.
IXYS IXGN30N60B3	600 V/30 A, but higher V_CE(sat) (1.8 V typ.), slower t_rr (110 ns), no integrated diode - requires external ultrafast diode.	Suitable for non-critical 8–12 kHz SMPS where cost sensitivity exceeds efficiency targets.	Choose only if existing PCB layout cannot accommodate D²PAK footprint and thermal performance margin >15 K is available.

Compared with STGP30H60DFB, STGB30H60DFB offers superior thermal interface reliability and automated assembly compatibility; versus IXGN30N60B3, it delivers 12% lower conduction loss and eliminates diode selection complexity - critical for high-efficiency renewable energy systems.

Availability

STGB30H60DFB is available at Aetrix Electronics and suitable for photovoltaic inverters, uninterruptible power supplies, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for STGB30H60DFB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's HB-series high-speed IGBT portfolio, engineered specifically for frequency converters demanding optimal trade-offs between conduction loss and switching speed in renewable energy and motor control applications.

FAQ

What is the maximum recommended gate resistor value for reliable switching at 20 kHz?

A 10 Ω gate resistor is validated in the datasheet for 20 kHz operation with 15 V drive, yielding 35 ns t_d(on) and 158 ns t_d(off) at T_J = 175 °C. Increasing beyond 15 Ω raises E_on + E_off by >22% and risks incomplete turn-on under high di/dt conditions; ST recommends 8–12 Ω for thermal-optimal performance.

Can STGB30H60DFB be paralleled without current-sharing resistors?

Yes - its slightly positive V_CE(sat) temperature coefficient (confirmed in Figure 5) and tight parameter distribution (±5% V_CE(sat)) enable stable current sharing across ≥3 devices. ST's application note AN4722 validates parallel operation up to 90 A total with 100 mm² copper pour per device and matched gate traces.

Is the integrated diode suitable for freewheeling in a synchronous buck converter?

No - this device is an IGBT with antiparallel diode, not a MOSFET. The diode is optimized for inductive-load recovery in bridge configurations, not unidirectional freewheeling. For synchronous buck topologies, discrete SiC Schottky diodes or trench MOSFETs are required due to body diode limitations and lack of reverse recovery control.

What is the minimum creepage distance required for PCB layout at 600 V DC operation?

Per IEC 62368-1, 600 V DC requires ≥5.0 mm creepage between collector (tab) and gate/emitter pads. ST's recommended D²PAK footprint (Figure 32) specifies 6.2 mm clearance from tab edge to nearest solder mask opening, satisfying reinforced insulation requirements for PV applications up to 1000 V system voltage.

STGB30H60DFB Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 30A

Power - Max:: 260 W

Switching Energy:: 383µJ (on), 293µJ (off)

Input Type:: Standard

Gate Charge:: 149 nC

Td (on/off) @ 25°C:: 37ns/146ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: 53 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STGB30H60DFB FAQ

1.How can I place an order for STGB30H60DFB through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB30H60DFB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB30H60DFB reliable?

The price and inventory of STGB30H60DFB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB30H60DFB is usually 5 days.

3.What payment methods are accepted for STGB30H60DFB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB30H60DFB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB30H60DFB?

STGB30H60DFB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB30H60DFB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB30H60DFB?

For technical support, including STGB30H60DFB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB30H60DFB requirements.

6.How does Aetrix verify that STGB30H60DFB is sourced from the original manufacturer or authorized distributors?

All STGB30H60DFB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB30H60DFB meets industry standards.

7.What is the process for return or replacement of STGB30H60DFB?

All STGB30H60DFB units undergo pre-shipment inspection (PSI). If there is an issue with STGB30H60DFB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB30H60DFB part is unused and in its original packaging.

Return procedure for STGB30H60DFB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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