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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB30H65DFB2

Name: STGB30H65DFB2
Brand: STMicroelectronics
SKU: STGB30H65DFB2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB30H65DFB2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA

Datasheet:: STGB30H65DFB2.pdf

Description:: TRENCH GATE FIELD-STOP 650 V, 30

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Product details

Overview

STGB30H65DFB2 from STMicroelectronics is a 650 V, 30 A high-speed trench gate field-stop IGBT with co-packaged soft-recovery diode in D²PAK (TO-263) package. It delivers low V_CE(sat) = 1.65 V (typ. @ I_C = 30 A, T_J = 25 °C), fast switching (t_d(off) = 71 ns, E_off = 310 µJ), and 175 °C maximum junction temperature - optimized for PFC stages and DC fast EV charging inverters.

For engineers reviewing the STGB30H65DFB2 datasheet, STGB30H65DFB2 pinout, STGB30H65DFB2 application, or STGB30H65DFB2 equivalent, key selection criteria include its 0.9 °C/W IGBT R_thJC, tight V_GE(th) distribution (5–7 V), minimized tail current, and antiparallel diode with t_rr = 115 ns (T_J = 25 °C) enabling high-frequency hard-switching in solar string inverters and UPS systems.

Technical Context

This IGBT employs ST's HB2 series trench gate field-stop architecture, engineered to reduce conduction losses at low-to-moderate currents while lowering total switching energy - especially turn-off loss including diode tail contribution. Its positive V_CE(sat) temperature coefficient ensures current sharing stability in parallel configurations.

The integrated diode features very fast and soft reverse recovery (Q_rr = 600 nC, dI_rr/dt = 700 A/µs), minimizing voltage overshoot and EMI in high-dV/dt applications like welding power supplies and bidirectional AC/DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - supports 400 VAC single-phase PFC and 600 VDC bus designs with 20% voltage margin
I_C (T_C = 100 °C)	30 A - continuous output current capability at industrial case temperature limits
V_CE(sat) (T_J = 175 °C)	2.0 V - enables <1.5 W conduction loss at 30 A, critical for thermal management in compact UPS modules
E_off (T_J = 175 °C)	643 µJ - quantifies total turn-off energy including diode tail, directly impacting thermal design at 20 kHz+ switching
R_thJC (IGBT)	0.9 °C/W - allows 150 W dissipation with only 135 °C ΔT from junction to case, supporting forced-air-cooled EV charger heatsinks
t_rr (di/dt = 1000 A/µs)	115 ns - ultra-fast soft recovery reduces snubber stress and improves efficiency in resonant LLC-PFC topologies
Q_g	90 nC - defines gate drive power requirement (≈1.35 mW @ 15 V, 20 kHz), guiding driver IC selection

Pinout & Package

D²PAK (TO-263) package with isolated tab (pin 2), standard 3-pin layout: pin 1 = Gate, pin 2 = Collector (tab), pin 3 = Emitter. Thermal pad soldered to PCB enhances heat transfer; mechanical outline complies with JEDEC TO-263AB Type A2.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls IGBT conduction; requires ≤±20 V drive, 90 nC total charge, and low-inductance routing to minimize ringing
Pin 2 (C / TAB)	Collector (power tab)	High-current input node; electrically isolated metal tab must be thermally anchored to heatsink and electrically referenced to system ground or DC bus
Pin 3 (E)	Emitter terminal	Return path for load current; serves as reference for gate drive; low-inductance Kelvin emitter connection recommended for precise V_CE(sat) sensing

Key Features

Feature	Design Value
Co-packaged soft-recovery diode	Reduces voltage overshoot and EMI during turn-off by limiting dI_rr/dt to 700 A/µs and enabling zero-voltage switching in quasi-resonant topologies
Positive V_CE(sat) tempco	Ensures inherent current balancing in paralleled IGBTs without external ballasting resistors, improving reliability in high-power PFC modules
Tight parameter distribution	V_GE(th) tolerance of 5–7 V and ±10% V_CE(sat) variation simplify gate drive design and improve system consistency across production batches
Minimized tail current	Lowers E_off by 35% vs prior HB1 generation, reducing thermal stress in 16–32 kHz DC fast charging inverters operating at full load
175 °C max junction rating	Enables operation in high-ambient environments (e.g., enclosed EV charging cabinets) without derating below 30 A continuous current

Applications

Welding Power Supplies

Solar String Inverters

Use Scenario: High-duty-cycle IGBT-based inverter welding machines requiring rapid current slew rates and robust short-circuit withstand.

IC Role / Device Role / Timing Role: Main switching device in primary-side inverter stage, handling 30 A pulsed output at 20–50 kHz with 90 A peak surge capability.

Use Value: Soft-recovery diode eliminates need for external snubbers, while 175 °C rating sustains >300 sec/min duty cycle without thermal shutdown.

Use Scenario: MPPT-enabled DC/AC conversion in residential solar string inverters with 600 VDC input and transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage, operating at 16–25 kHz with unidirectional current flow and active anti-islanding protection.

Use Value: Low 1.65 V V_CE(sat) and 310 µJ E_off enable >98.5% peak efficiency at 5 kW output, meeting EN 62109 safety standards.

Uninterruptible Power Supplies (UPS)

EV DC Fast Charging Stations

Use Scenario: Online double-conversion UPS systems delivering clean 230 VAC output with zero transfer time during grid failure.

IC Role / Device Role / Timing Role: Bidirectional switch in inverter/rectifier stage, conducting 30 A continuously and switching at 12–20 kHz under battery backup mode.

Use Value: Tight V_GE(th) distribution ensures consistent turn-on timing across parallel modules, critical for harmonic cancellation in multi-level UPS architectures.

Use Scenario: 150–350 kW liquid-cooled DC fast chargers converting 400–1000 VDC grid input to 200–1000 VDC vehicle battery interface.

IC Role / Device Role / Timing Role: Primary switch in interleaved boost PFC front-end, operating at 32–64 kHz with 30 A RMS current per phase.

Use Value: 0.9 °C/W R_thJC and 175 °C rating allow sustained 100% power delivery at 55 °C ambient, meeting IEC 62955 leakage current requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N60B3	600 V rating, higher V_CE(sat) = 1.8 V (typ.), slower t_rr = 250 ns, no co-packaged diode	Requires external ultrafast diode; less suitable for high-frequency PFC where diode losses dominate	Prefer when cost sensitivity outweighs efficiency targets and board space permits discrete diode layout
Infineon IKP30N60T7	600 V rating, lower E_off = 220 µJ but higher Q_g = 115 nC, R_thJC = 1.1 °C/W	Better switching efficiency at light loads but higher gate drive loss and thermal resistance limit peak power density	Select for high-efficiency, low-noise SMPS where gate drive overhead is acceptable and heatsinking is constrained

Compared with IXGN30N60B3 and IKP30N60T7, STGB30H65DFB2 offers superior voltage margin (650 V), integrated soft diode, and lowest thermal resistance - making it optimal for compact, high-power-density PFC and EV charging designs demanding both efficiency and reliability.

Availability

STGB30H65DFB2 is available at Aetrix Electronics and suitable for welding equipment, solar string inverters, and uninterruptable power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for STGB30H65DFB2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive-grade ICs with vertical manufacturing capabilities.

This device belongs to ST's HB2-series high-speed IGBT portfolio, designed specifically for high-efficiency, high-frequency power conversion in renewable energy, industrial motor drives, and EV infrastructure applications.

FAQ

What is the maximum allowable gate-emitter voltage for STGB30H65DFB2?

The absolute maximum DC gate-emitter voltage is ±20 V, with transient capability up to ±30 V for pulses ≤10 µs. Exceeding ±20 V continuously risks gate oxide degradation; typical gate drive uses +15 V turn-on and –5 to –10 V turn-off to ensure robust noise immunity and fast fall times.

Does STGB30H65DFB2 require a negative gate voltage for reliable turn-off?

No, it operates reliably with 0 V turn-off, but applying –5 V to –10 V improves immunity to Miller-induced false turn-on in high-dV/dt environments like PFC bridges. The device's V_GE(th) range (5–7 V) and low IGES (±250 nA) make it compatible with standard unipolar gate drivers.

How does the co-packaged diode differ from standard FRD counterparts?

This diode features soft recovery (dI_rr/dt = 700 A/µs), low Q_rr (600 nC), and minimal tail current - unlike fast recovery diodes that exhibit abrupt current collapse and higher EMI. Its characteristics are tightly matched to the IGBT's switching behavior, enabling optimized dead-time control and reduced snubber losses.

Can STGB30H65DFB2 be paralleled for higher current capacity?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution (±10% V_CE(sat), 5–7 V V_GE(th)) enable stable current sharing without external emitter resistors. Layout symmetry, matched gate drive impedance, and thermal coupling between devices are essential to maintain balance under dynamic load conditions.

STGB30H65DFB2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: HB2

Package/Case:: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 30A

Power - Max:: 167 W

Switching Energy:: 270µJ (on), 310µJ (off)

Input Type:: Standard

Gate Charge:: 90 nC

Td (on/off) @ 25°C:: 18.4ns/71ns

Test Condition:: 400V, 30A, 6.8Ohm, 15V

Reverse Recovery Time (trr):: 115 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK-3

STGB30H65DFB2 FAQ

1.How can I place an order for STGB30H65DFB2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB30H65DFB2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB30H65DFB2 reliable?

The price and inventory of STGB30H65DFB2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB30H65DFB2 is usually 5 days.

3.What payment methods are accepted for STGB30H65DFB2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB30H65DFB2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB30H65DFB2?

STGB30H65DFB2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB30H65DFB2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB30H65DFB2?

For technical support, including STGB30H65DFB2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB30H65DFB2 requirements.

6.How does Aetrix verify that STGB30H65DFB2 is sourced from the original manufacturer or authorized distributors?

All STGB30H65DFB2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB30H65DFB2 meets industry standards.

7.What is the process for return or replacement of STGB30H65DFB2?

All STGB30H65DFB2 units undergo pre-shipment inspection (PSI). If there is an issue with STGB30H65DFB2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB30H65DFB2 part is unused and in its original packaging.

Return procedure for STGB30H65DFB2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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