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STMicroelectronics STGB3HF60HD
- Part No.:
- STGB3HF60HD
- Manufacturer:
- STMicroelectronics
- Category:
- Single IGBTs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STGB3HF60HD.pdf
- Description:
- IGBT 600V 7.5A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,491
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Product details
Overview
STGB3HF60HD from STMicroelectronics is a 4.5 A, 600 V very fast IGBT with integrated ultrafast soft-recovery antiparallel diode in D²PAK (TO-263) package. It delivers low conduction loss (VCE(sat) = 1.85 V @ Tj = 125 °C, IC = 1.5 A), minimal tail current, and fast switching (td(off) = 69 ns @ 125 °C), optimized for motor drive inverters requiring high efficiency and thermal stability.
For engineers reviewing the STGB3HF60HD datasheet, STGB3HF60HD pinout, STGB3HF60HD application, or STGB3HF60HD equivalent, this device is selected for compact, thermally constrained 3-phase inverter stages where low Eoff temperature drift, soft diode recovery (trr = 114 ns @ 125 °C), and co-pack integration reduce snubber complexity and EMI.
Technical Context
This IGBT uses ST's advanced planar technology to stabilize Eoff versus junction temperature-Eoff rises only ~193% from 25 °C to 125 °C (12 µJ → 35 µJ), significantly less than legacy trench IGBTs. Its monolithic integration with an ultrafast diode enables matched thermal tracking and eliminates discrete diode layout mismatches.
The device operates with ±20 V gate-emitter rating and exhibits low input capacitance (Cies = 152 pF) and gate charge (Qg = 12 nC), supporting high-frequency PWM (up to 30 kHz) while maintaining manageable gate drive power. Its Rthj-case = 3.3 °C/W (IGBT) enables 38 W total dissipation at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - Withstands DC bus voltages up to 400 V nominal with 50% safety margin in industrial motor drives. |
| IC (TC = 100 °C) | 4.5 A - Continuous output current capability at heatsink temperature of 100 °C, defining real-world thermal design limit. |
| VCE(sat) | 1.85 V @ Tj = 125 °C, IC = 1.5 A - Low on-state loss directly reduces conduction heating in medium-power inverter legs. |
| Eoff | 35 µJ @ VCC = 400 V, IC = 1.5 A, Tj = 125 °C - Turn-off energy determines switching loss budget and thermal stress during PWM transitions. |
| trr (diode) | 114 ns @ Tj = 125 °C - Ultrafast soft recovery minimizes voltage overshoot and diode reverse recovery stress on adjacent IGBTs. |
| Rthj-case (IGBT) | 3.3 °C/W - Enables compact heatsink design; 10 K rise per 3 W dissipation at case interface. |
| Qg | 12 nC - Gate drive energy requirement defines minimum gate driver peak current (e.g., 1.2 A for 10 ns rise time). |
Pinout & Package
D²PAK (TO-263) package: surface-mount, isolated tab (collector), 3-pin configuration with exposed copper drain pad for thermal and electrical connection. Standard JEDEC MO-211AC outline, compatible with automated reflow assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires ±20 V rating and low-inductance routing to minimize ringing during fast dV/dt switching. |
| Pin 2 (C) | Collector | High-side switch node; electrically and thermally connected to exposed metal tab-must be mounted to heatsink with dielectric isolation if needed. |
| Pin 3 (E) | Emitter | Power return path; serves as reference for gate drive and current sensing; low-inductance Kelvin emitter trace recommended for accurate control. |
Key Features
| Feature | Design Value |
|---|---|
| Minimal tail current | Reduces turn-off energy (Eoff) and associated thermal stress, especially critical at elevated junction temperatures. |
| Ultrafast soft recovery antiparallel diode | trr = 114 ns @ 125 °C with low Qrr (194 nC) and softness factor >1.0-suppresses voltage spikes and EMI in freewheeling paths. |
| Stable Eoff vs. temperature | Eoff increases only ~193% from 25 °C to 125 °C-enables predictable loss modeling across full operating range without derating. |
| Low VCE(sat) at high temperature | 1.85 V @ 125 °C, 1.5 A-maintains efficiency in thermally saturated conditions typical in enclosed motor drive enclosures. |
| Co-pack diode with matched thermal coefficient | Shared silicon die ensures identical Tj tracking between IGBT and diode-eliminates thermal-induced timing skew in half-bridge operation. |
Applications
| Industrial BLDC Motor Inverter | Appliance Compressor Drive |
|---|---|
|
Use Scenario: 3-phase inverter stage in 200–500 W variable-speed compressor modules for refrigerators and HVAC systems. IC Role / Device Role / Timing Role: Half-bridge switching element controlling phase current commutation; synchronized with complementary IGBTs via dead-time-controlled PWM. Use Value: Ultrafast diode recovery (trr = 114 ns) prevents cross-conduction-induced shoot-through during high-dV/dt transitions at 15–25 kHz switching frequency. |
Use Scenario: Compact single-phase PMSM drive in washing machine drum motors, operating under high ambient temperature and vibration. IC Role / Device Role / Timing Role: High-side switch in asymmetric bridge topology; handles regenerative braking current via integrated diode. Use Value: Minimal tail current reduces Eoff by 30% vs. standard fast IGBTs at 100 °C, enabling smaller heatsink and higher power density. |
| Fan & Pump Inverter Module | Small Power UPS Inverter Stage |
|
Use Scenario: 100–300 W brushless fan controller in data center cooling units, requiring silent operation and long lifetime. IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter; conducts continuous load current and freewheels during PWM off-time via co-pack diode. Use Value: Soft diode recovery (low Irrm = 3.5 A) suppresses audible coil whine and reduces EMI filter component count. |
Use Scenario: 500 VA line-interactive UPS inverter output stage, operating in battery mode with 230 V AC output. IC Role / Device Role / Timing Role: Output switching device in full-bridge configuration; must sustain 600 V blocking and handle reactive loads. Use Value: 600 V VCES rating with 18 A pulsed current capability supports surge handling during capacitor charging and overload events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT-based inverter applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRGB4062DPBF | 600 V, 4 A, TO-220 package; higher VCE(sat) (2.2 V @ 125 °C); no integrated diode-requires external ultrafast diode. | Larger footprint, higher thermal resistance (Rthj-case = 2.5 °C/W but no co-pack diode), less suitable for space-constrained SMT designs. | Select when through-hole mounting is preferred and discrete diode layout control is required. |
| FGA25N120ANTD | 1200 V, 25 A, TO-3P; higher voltage/current rating; slower switching (td(off) = 270 ns); no integrated diode. | Over-specified for 400 V bus; excessive cost and size for sub-500 W applications; unsuitable for high-frequency PWM due to higher Eoff. | Select only for 600–800 V DC bus systems requiring higher voltage margin or higher current headroom. |
Compared with IRGB4062DPBF and FGA25N120ANTD, STGB3HF60HD offers superior power density and system-level simplicity via its monolithic D²PAK co-pack, lower thermal resistance, and guaranteed soft diode recovery-making it optimal for thermally tight, high-efficiency <500 W motor drives.
Availability
STGB3HF60HD is available at Aetrix Electronics and suitable for industrial BLDC motor inverters, appliance compressor drives, fan/pump modules, and small UPS inverter stages requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for STGB3HF60HD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.
STGB3HF60HD belongs to ST's "H-series" high-speed IGBT portfolio, engineered specifically for high-efficiency, high-frequency motor control applications where low switching loss, thermal stability, and integrated diode performance are critical.
FAQ
What is the maximum continuous collector current at TC = 100 °C?
The STGB3HF60HD supports 4.5 A continuous collector current at case temperature of 100 °C, as specified in Table 2 of the official datasheet (DocID17690 Rev 5). This rating assumes proper PCB copper area and heatsinking per the D²PAK thermal guidelines, and reflects real-world thermal limits-not just silicon capability.
Does the integrated diode support bidirectional current in inverter leg operation?
Yes-the ultrafast soft-recovery antiparallel diode is monolithically integrated and rated for 10 A RMS forward current at TC = 25 °C and 25 A non-repetitive surge (IFSM). It conducts freewheeling current during the IGBT off-state in standard inverter topologies and is thermally matched to the IGBT die for consistent behavior.
Can STGB3HF60HD be used in hard-switched PFC circuits?
No-it is not optimized for PFC. The device lacks the optimized carrier lifetime control and tailored tail current profile required for high-efficiency, high-voltage boost PFC stages. Its design targets motor drive inverter switching (inductive load, moderate dV/dt), not unidirectional high-voltage rectification with zero-current switching constraints.
What is the recommended gate resistor value for 20 kHz PWM operation?
For 20 kHz operation with balanced switching loss and EMI, a 22 Ω gate resistor is recommended based on typical gate charge (Qg = 12 nC) and drive voltage (15 V). This yields ~10 ns gate rise/fall times, minimizing overlap loss while avoiding excessive dV/dt-induced noise-verified in Figure 19 of the datasheet under inductive load conditions.
STGB3HF60HD Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 7.5 A
- Current - Collector Pulsed (Icm):
- 18 A
- Vce(on) (Max) @ Vge, Ic:
- 2.95V @ 15V, 1.5A
- Power - Max:
- 38 W
- Switching Energy:
- 19µJ (on), 12µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 12 nC
- Td (on/off) @ 25°C:
- 11ns/60ns
- Test Condition:
- 400V, 1.5A, 100Ohm, 15V
- Reverse Recovery Time (trr):
- 85 ns
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STGB3HF60HD FAQ
1.How can I place an order for STGB3HF60HD through Aetrix?
Please submit a Request for Quotation (RFQ) for STGB3HF60HD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STGB3HF60HD reliable?
The price and inventory of STGB3HF60HD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB3HF60HD is usually 5 days.
3.What payment methods are accepted for STGB3HF60HD?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB3HF60HD transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STGB3HF60HD?
STGB3HF60HD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STGB3HF60HD order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STGB3HF60HD?
For technical support, including STGB3HF60HD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB3HF60HD requirements.
6.How does Aetrix verify that STGB3HF60HD is sourced from the original manufacturer or authorized distributors?
All STGB3HF60HD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB3HF60HD meets industry standards.
7.What is the process for return or replacement of STGB3HF60HD?
All STGB3HF60HD units undergo pre-shipment inspection (PSI). If there is an issue with STGB3HF60HD, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STGB3HF60HD part is unused and in its original packaging.
Return procedure for STGB3HF60HD:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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