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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB3NB60FDT4

Name: STGB3NB60FDT4
Brand: STMicroelectronics
SKU: STGB3NB60FDT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB3NB60FDT4

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGB3NB60FDT4.pdf

Description:: IGBT 600V 6A 68W D2PAK

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Product details

Overview

STGB3NB60FDT4 from STMicroelectronics is a 600 V, 3 A N-channel PowerMESH™ IGBT in D2PAK (TO-263) package with tape-and-reel packaging, optimized for high-frequency switching (<40 kHz) in hard-switching and resonant topologies. It features 1.9 V typical V_CE(sat) at 3 A/25°C, 16 nC total gate charge, and integrated anti-parallel diode with 45 ns reverse recovery time.

For engineers reviewing the STGB3NB60FDT4 datasheet, STGB3NB60FDT4 pinout, STGB3NB60FDT4 application, or STGB3NB60FDT4 equivalent, this device is selected for motor control inverters, PFC stages, and SMPS where low conduction loss, fast turn-off (230 ns td(off) @125°C), and robust short-circuit rating are critical design requirements.

Technical Context

This IGBT uses ST's patented strip layout PowerMESH™ structure to achieve high input impedance, low V_CE(sat), and reduced gate charge. Its "F" suffix denotes optimization for frequency-critical applications, with tail-current-inclusive off-losses and rated short-circuit withstand capability.

The integrated emitter-collector diode supports bidirectional current handling in bridge configurations. Thermal resistance R_thj-case is 1.8 °C/W (D2PAK), enabling efficient heatsinking in compact industrial power modules operating up to 150°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Withstands DC bus voltages up to 600 V in 3-phase inverters and PFC boost stages
I_C (continuous @ T_C=100°C)	3 A - Sustains rated load current at elevated case temperatures without derating
V_CE(sat) (typ @ 3 A, 25°C)	1.9 V - Minimizes conduction loss in 1–5 kW power stages
Q_g (total)	16 nC - Enables fast, low-drive-power switching with standard 15 V gate drivers
t_d(off) @ 125°C	230 ns - Supports stable operation at 20–40 kHz PWM frequencies with predictable timing margins
R_thj-case	1.8 °C/W - Allows direct mounting to heatsink for thermal management in space-constrained D2PAK layouts
V_f (diode, @ 1.5 A)	1.31 V - Low forward drop reduces freewheeling losses in half-bridge and full-bridge topologies

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated heatsink tab (pin 3), standardized 3-pin layout for high-current IGBTs.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	High-impedance voltage-driven terminal requiring ≤±20 V gate drive; low Q_ge (1.5 nC) enables fast turn-on
2 (Collector)	High-side power output	Connects to DC bus or transformer primary; rated for 600 V blocking and 24 A pulsed current
3 (Emitter)	Power return / reference node	Common source for gate drive and load current return; electrically isolated tab enables heatsink mounting without insulation

Key Features

Feature	Design Value
PowerMESH™ strip layout	Enables uniform current distribution and reduced saturation voltage vs. conventional planar IGBTs
Short-circuit rated	Withstands 10 µs short-circuit events at rated V_CE and T_j = 150°C without destructive failure
Integrated anti-parallel diode	Optimized for soft recovery (t_rr = 45 ns) and low Q_rr (2.7 nC), reducing switching stress in bridge legs
Low gate charge (Q_g = 16 nC)	Reduces gate driver power dissipation and enables use of cost-effective 1–2 W drivers in 3–5 kW systems
High-frequency optimized ("F" suffix)	Engineered for <40 kHz operation with minimized E_off (295 µJ @ 125°C) and controlled tail current

Applications

Industrial Motor Drives

AC-DC PFC Boost Converters

Use Scenario: 3-phase inverter stage in 0.75–2.2 kW variable-frequency drives for pumps and fans.

IC Role / Device Role / Timing Role: High-side switch in six-pack IGBT module configuration; handles 600 V DC link and 3 A RMS motor phase current.

Use Value: Low V_CE(sat) and fast t_d(off) reduce conduction + switching losses by ~18% vs. legacy 600 V IGBTs at 16 kHz PWM.

Use Scenario: Active boost switch in universal-input (85–265 VAC) PFC front-end for server PSUs and industrial SMPS.

IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) boost topology; operates at 65–100 kHz with 3 A peak current.

Use Value: Integrated diode with low Q_rr minimizes voltage overshoot during diode commutation, eliminating need for external snubbers.

Resonant LLC Converters

Induction Heating Half-Bridge

Use Scenario: Primary-side switch in 1–3 kW LLC resonant DC-DC converters for telecom rectifiers and EV chargers.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-assisted high-frequency switch; leverages low C_ies (230 pF) and fast tr/tf for clean turn-on/turn-off transitions.

Use Value: 1.8 °C/W R_thj-case allows direct heatsink attachment in sealed enclosures, maintaining T_j < 125°C at full load.

Use Scenario: Switching element in 20–50 kHz half-bridge resonant tank for domestic and commercial induction cooktops.

IC Role / Device Role / Timing Role: Hard-switched high-current switch driving series-resonant LC load; handles repetitive 24 A pulsed collector current.

Use Value: Short-circuit rating and 150°C max junction temperature ensure reliability under transient overloads and thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency 600 V IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP3NB60FDT4	TO-220FP package, R_thj-case = 5.0 °C/W, same electrical specs	Better suited for through-hole prototyping and lower-power (<1 kW) designs with forced-air cooling	Select when mechanical compatibility with TO-220FP footprints or manual assembly is required
STGD3NB60FT4	DPAK package, R_thj-case = 2.1 °C/W, identical V_CE(sat)/Q_g, but lower I_CM (24 A vs. 24 A same)	Preferred for ultra-compact, low-profile PCBs where D2PAK height is prohibitive (e.g., slim PSUs)	Select when board space is constrained and thermal interface to heatsink is via small-area thermal pad

Compared with STGP3NB60FDT4 and STGD3NB60FT4, STGB3NB60FDT4 offers the lowest thermal resistance (1.8 °C/W) and highest power density in surface-mount form, making it optimal for production-scale 2–5 kW industrial converters where thermal performance and automated assembly are prioritized.

Availability

STGB3NB60FDT4 is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC PFC boost converters, and resonant LLC converters requiring stable component supply across multi-year production cycles.

Supply support for STGB3NB60FDT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's PowerMESH™ IGBT product line, engineered specifically for high-efficiency, high-frequency power conversion in motor control, SMPS, and PFC applications where low switching loss and ruggedness are essential.

FAQ

What gate drive voltage is recommended for STGB3NB60FDT4?

STMicroelectronics specifies ±20 V absolute maximum gate-emitter voltage, with recommended operating range of +15 V (turn-on) and –5 V to –10 V (turn-off). A +15 V / –10 V drive ensures reliable saturation while minimizing Miller-induced false turn-on during high di/dt switching. Gate resistor selection must balance switching speed against voltage overshoot and EMI.

Does STGB3NB60FDT4 include an integrated freewheeling diode?

Yes - the "D" suffix indicates an integrated emitter-collector diode fabricated monolithically with the IGBT die. This diode has 1.31 V forward voltage at 1.5 A and 45 ns reverse recovery time at 125°C, enabling self-contained half-bridge operation without discrete diode placement or layout complexity.

Can STGB3NB60FDT4 be used in parallel configurations?

Yes - its positive V_GE(th) temperature coefficient (3–5 V range, increasing with junction temperature) enables inherent current sharing when paralleled with matched devices. Successful implementation requires symmetrical gate drive routing, identical source inductance, and thermal coupling via shared heatsink to maintain balanced T_j across devices.

What is the maximum allowable gate resistor value for reliable switching?

Based on measured 16 nC Q_g and 15 V drive, a 22 Ω gate resistor yields ~120 ns effective turn-on delay and keeps peak gate current below 700 mA - within safe limits for standard gate drivers. Values above 47 Ω significantly increase E_on and may cause thermal runaway in high-frequency operation due to prolonged transition times.

STGB3NB60FDT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 6 A

Current - Collector Pulsed (Icm):: 24 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 3A

Power - Max:: 68 W

Switching Energy:: 125µJ (off)

Input Type:: Standard

Gate Charge:: 16 nC

Td (on/off) @ 25°C:: 12.5ns/105ns

Test Condition:: 480V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr):: 45 ns

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STGB3NB60FDT4 FAQ

1.How can I place an order for STGB3NB60FDT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB3NB60FDT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB3NB60FDT4 reliable?

The price and inventory of STGB3NB60FDT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB3NB60FDT4 is usually 5 days.

3.What payment methods are accepted for STGB3NB60FDT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB3NB60FDT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB3NB60FDT4?

STGB3NB60FDT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB3NB60FDT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB3NB60FDT4?

For technical support, including STGB3NB60FDT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB3NB60FDT4 requirements.

6.How does Aetrix verify that STGB3NB60FDT4 is sourced from the original manufacturer or authorized distributors?

All STGB3NB60FDT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB3NB60FDT4 meets industry standards.

7.What is the process for return or replacement of STGB3NB60FDT4?

All STGB3NB60FDT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGB3NB60FDT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB3NB60FDT4 part is unused and in its original packaging.

Return procedure for STGB3NB60FDT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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