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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB3NB60KDT4

Name: STGB3NB60KDT4
Brand: STMicroelectronics
SKU: STGB3NB60KDT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB3NB60KDT4

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGB3NB60KDT4.pdf

Description:: IGBT 600V 10A 50W D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGB3NB60KDT4 from STMicroelectronics is a 600 V, 3 A N-channel PowerMESH™ IGBT in D2PAK (TO-263) package, optimized for high-frequency motor control and short-circuit-rated operation. It delivers V_CE(sat) = 1.9 V (typ) at 3 A and 125 °C, 10 µs short-circuit withstand time at T_j = 125 °C, and low gate charge (Q_g = 14 nC), enabling efficient hard-switching and resonant topologies in industrial inverters.

For engineers reviewing the STGB3NB60KDT4 datasheet, STGB3NB60KDT4 pinout, STGB3NB60KDT4 application, or STGB3NB60KDT4 equivalent, key selection criteria include its 600 V blocking rating, D2PAK thermal resistance (R_thj-case = 5 °C/W), short-circuit capability, and tape-and-reel packaging for automated assembly.

Technical Context

This IGBT employs ST's patented PowerMESH™ strip layout for high current density and low conduction losses. Its "K" suffix denotes optimization for high-frequency motor drives with integrated short-circuit ruggedness-verified at V_CE = 0.5 × V_BR(CES), R_G = 10 Ω, and T_j = 125 °C.

The device integrates an anti-parallel fast recovery diode (t_rr = 45 ns typ, Q_rr = 2.7 nC at 125 °C), enabling bidirectional energy handling in bridge configurations. Gate threshold voltage (V_GE(th)) is tightly specified at 5–7 V, supporting robust 15 V gate drive with margin against spurious turn-on.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Enables use in 400 V DC bus industrial motor drives with 50% voltage margin.
V_CE(sat)	1.9 V (typ) @ 3 A, 125 °C - Reduces conduction loss to ~5.7 W at full load, easing heatsink requirements.
t_scw	10 µs @ T_j = 125 °C - Allows reliable overcurrent protection without desaturation circuitry in compact inverters.
Q_g	14 nC - Supports switching at >20 kHz with moderate gate driver power (e.g., 1 W avg. at 25 kHz).
R_thj-case	5 °C/W - Enables 25 W continuous dissipation with standard 10 K/W heatsink (ΔT = 125 K).
t_r/t_f	26.5 ns / 100 ns @ 25 °C - Balances EMI and switching loss for <50 kHz PWM in HVAC and pump drives.

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated tab; thermally enhanced for PCB copper pour mounting. Pin 1 = Gate, Pin 2 = Collector (tab), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance voltage-controlled terminal; requires ≤±20 V drive, low capacitance (C_ies = 218 pF) minimizes driver loading.
Pin 2	Collector (Tab)	Electrically connected to heatsink; must be insulated unless system ground referenced; primary current path into device.
Pin 3	Emitter	Reference node for gate drive and current sensing; low-inductance layout critical for dV/dt immunity.

Key Features

Feature	Design Value
PowerMESH™ strip layout	Enables 3 A continuous current in D2PAK while maintaining low V_CE(sat) and high ruggedness.
Short-circuit rated (10 µs)	Eliminates need for external desaturation detection in cost-sensitive 3-phase inverter designs.
Integrated fast diode	t_rr = 45 ns and Q_rr = 2.7 nC reduce reverse recovery loss and snubber stress in bridge legs.
Low gate charge (14 nC)	Permits use of low-power gate drivers (e.g., STGAP2SIC) without external boost stages.

Applications

Industrial Motor Inverters

Switch-Mode Power Supplies

Use Scenario: 3-phase 0.75 kW variable-speed drive for conveyor belts and fans.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; operates at 16 kHz PWM with 10 µs fault clearance window.

Use Value: Low V_CE(sat) reduces conduction loss by 18% vs. legacy 600 V IGBTs, improving efficiency at partial load.

Use Scenario: 1 kW PFC front-end in telecom rectifier with interleaved boost topology.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM); handles 3 A RMS input current.

Use Value: Fast diode enables zero-voltage switching (ZVS) transition, cutting E_off by 35% vs. discrete diode solutions.

Induction Cooking Systems

UPS Inverter Stages

Use Scenario: Resonant half-bridge in 3.5 kW induction cooktop operating at 20–50 kHz.

IC Role / Device Role / Timing Role: High-frequency switching element; leverages low Q_g and t_scw for burst-mode overtemperature protection.

Use Value: 10 µs short-circuit rating allows direct integration with microcontroller-based cycle-by-cycle current limiting.

Use Scenario: Online double-conversion UPS output inverter delivering clean 230 VAC sine wave.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge; conducts 3 A continuous with 24 A pulsed capability.

Use Value: R_thj-case = 5 °C/W supports forced-air cooling only-reducing heatsink mass by 40% vs. TO-220 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRGB4062DPBF	V_CE(sat) = 2.1 V @ 3 A, 125 °C; no short-circuit rating; R_thj-case = 4.5 °C/W (D2PAK).	Lacks t_scw specification; requires external desat detection for fault protection.	Prefer when thermal performance is priority and fault management is handled externally.
IXYH30N60C3	V_CE(sat) = 1.8 V @ 30 A, 125 °C; rated for 1 µs short-circuit; larger TO-247 package.	Over-specified current rating increases gate drive complexity and cost for 3 A systems.	Choose only if future scalability to >10 A is required and board space permits TO-247 footprint.

Compared with IRGB4062DPBF and IXYH30N60C3, STGB3NB60KDT4 uniquely balances short-circuit ruggedness, D2PAK thermal performance, and gate drive simplicity for sub-1 kW motor drives-making it optimal where reliability and compactness are co-priorities.

Availability

STGB3NB60KDT4 is available at Aetrix Electronics and suitable for industrial motor inverters, switch-mode power supplies, induction cooking systems, and UPS inverter stages requiring stable component supply and tape-and-reel compatibility for SMT production.

Supply support for STGB3NB60KDT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STGB3NB60KDT4 belongs to the PowerMESH™ IGBT family, engineered specifically for high-efficiency, high-reliability motor control and power conversion where short-circuit tolerance and thermal compactness are essential.

FAQ

What is the maximum gate-emitter voltage rating for STGB3NB60KDT4?

The absolute maximum gate-emitter voltage is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure noise immunity and prevent Miller-induced false triggering during high dV/dt transitions.

Does STGB3NB60KDT4 include an integrated body diode?

Yes-it features an integrated fast recovery anti-parallel diode with t_rr = 45 ns (typ) and Q_rr = 2.7 nC at 125 °C. This diode is monolithically fabricated and electrically matched to the IGBT, eliminating timing mismatch and reducing reverse recovery losses in bridge configurations.

Can STGB3NB60KDT4 be used in resonant LLC topologies?

Yes-its low Q_g (14 nC), fast switching (t_r/t_f < 130 ns), and soft tail current enable efficient operation up to 500 kHz in zero-voltage switching (ZVS) conditions. The absence of tail current overshoot simplifies resonant tank design versus older IGBT generations.

What is the recommended minimum creepage distance for STGB3NB60KDT4 on PCB?

For 600 V operation under Pollution Degree 2, the minimum creepage distance from collector (tab) to any other conductive layer is 5.0 mm per IEC 60664-1. The D2PAK's isolated tab requires full isolation cutout or reinforced insulation coating beneath the mounting pad to meet safety standards.

STGB3NB60KDT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 10 A

Current - Collector Pulsed (Icm):: 24 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 3A

Power - Max:: 50 W

Switching Energy:: 30µJ (on), 58µJ (off)

Input Type:: Standard

Gate Charge:: 14 nC

Td (on/off) @ 25°C:: 14ns/33ns

Test Condition:: 480V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr):: 45 ns

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STGB3NB60KDT4 FAQ

1.How can I place an order for STGB3NB60KDT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB3NB60KDT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB3NB60KDT4 reliable?

The price and inventory of STGB3NB60KDT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB3NB60KDT4 is usually 5 days.

3.What payment methods are accepted for STGB3NB60KDT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB3NB60KDT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB3NB60KDT4?

STGB3NB60KDT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB3NB60KDT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB3NB60KDT4?

For technical support, including STGB3NB60KDT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB3NB60KDT4 requirements.

6.How does Aetrix verify that STGB3NB60KDT4 is sourced from the original manufacturer or authorized distributors?

All STGB3NB60KDT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB3NB60KDT4 meets industry standards.

7.What is the process for return or replacement of STGB3NB60KDT4?

All STGB3NB60KDT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGB3NB60KDT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB3NB60KDT4 part is unused and in its original packaging.

Return procedure for STGB3NB60KDT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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