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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB3NB60SDT4

Name: STGB3NB60SDT4
Brand: STMicroelectronics
SKU: STGB3NB60SDT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB3NB60SDT4

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGB3NB60SDT4.pdf

Description:: IGBT 600V 6A 70W D2PAK

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Product details

Overview

STGB3NB60SDT4 from STMicroelectronics is a 600 V, 3 A N-channel PowerMESH™ IGBT in D2PAK (TO-263) surface-mount package, featuring integrated freewheeling diode, <1.5 V V_CE(sat) at 3 A, and optimized for low-frequency switching (<1 kHz). It delivers high current capability with low conduction loss in static relay and gas discharge lamp ballast circuits.

For engineers reviewing the STGB3NB60SDT4 datasheet, STGB3NB60SDT4 pinout, STGB3NB60SDT4 application, or STGB3NB60SDT4 equivalent, key selection criteria include verified V_CE(sat) ≤1.5 V at 3 A, integrated diode reverse recovery time (t_rr = 1700 ns), gate threshold voltage (V_GE(th) = 2.5–5 V), thermal resistance (R_thj-case = 2.14 °C/W), and D2PAK mechanical compatibility.

Technical Context

This IGBT employs ST's patented PowerMESH™ strip layout for enhanced voltage blocking and reduced saturation voltage. Its "S" suffix denotes optimization for low-frequency operation, where tail current contribution to off-losses is explicitly included per JEDEC standard.

The device integrates a fast-recovery freewheeling diode (t_rr = 1700 ns, Q_rr = 4500 nC) with matched thermal coupling to the IGBT die. Gate drive requires ±20 V absolute max rating and 18 nC total gate charge under 480 V/3 A switching conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - rated blocking voltage for mains-connected AC loads up to 400 V RMS.
V_CE(sat)	≤1.5 V at I_C = 3 A, T_j = 125 °C - enables low conduction loss in 3 A continuous motor control stages.
I_C (cont.)	3 A at T_c = 100 °C - defines usable current in thermally constrained PCB layouts with heatsink.
R_thj-case	2.14 °C/W - determines junction-to-case temperature rise under 70 W dissipation limit.
t_rr	1700 ns at I_f = 3 A, T_j = 125 °C - sets minimum dead-time requirement in half-bridge inductive switching.
Q_G	18 nC at V_CE = 480 V, I_C = 3 A - defines gate driver peak current demand (≥18 mA for 1 µs rise).
E_off	1.15 mJ at T_j = 25 °C - quantifies energy dissipated during turn-off in 480 V inductive load switching.

Pinout & Package

D2PAK (TO-263) surface-mount power package with exposed drain tab for thermal conduction and mechanical anchoring. Three terminals: Gate (G), Collector (C), Emitter (E). Tab is electrically connected to Collector.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Voltage-driven terminal requiring 2.5–5 V threshold; 18 nC total charge for full enhancement.
Collector (C)	High-side power input	Connected to main DC bus or AC line; ties to exposed metal tab for thermal path.
Emitter (E)	Power return / reference	Common node for load current return and gate drive reference; isolated from tab.

Key Features

Feature	Design Value
Integrated freewheeling diode	Matched thermal coupling and 1700 ns t_rr eliminates need for external diode in single-switch flyback or relay drivers.
Low V_CE(sat)	≤1.5 V at 3 A reduces conduction loss to <4.5 W, enabling compact thermal design in sealed enclosures.
PowerMESH™ structure	Patented strip layout achieves 600 V breakdown with 2.14 °C/W R_thj-case, supporting >3 A continuous current at 100 °C case temp.
Low-frequency optimization ("S" suffix)	Minimizes V_CE(sat) and tail current contribution, making it unsuitable for >1 kHz PWM but ideal for static switching.

Applications

Gas Discharge Lamp Ballast

Static Relay Replacement

Use Scenario: High-voltage ignition and sustaining current control in fluorescent and HID lamps.

IC Role / Device Role / Timing Role: Main switching element in series-resonant ballast topology operating below 1 kHz.

Use Value: Integrated diode handles lamp re-ignition current; 600 V rating withstands open-circuit lamp voltage spikes.

Use Scenario: Solid-state replacement of electromechanical relays in HVAC and industrial control panels.

IC Role / Device Role / Timing Role: Zero-crossing–free, latching switch for resistive and inductive AC loads.

Use Value: 3 A continuous rating at 100 °C case supports 240 V/600 W loads without forced air cooling.

Motor Start Control

Induction Heater Half-Bridge

Use Scenario: Single-phase induction motor start winding energization in compressors and pumps.

IC Role / Device Role / Timing Role: Momentary high-current switch (≤3 s duty) triggered by start capacitor discharge.

Use Value: 25 A pulsed current rating allows reliable start surge handling without derating.

Use Scenario: Low-frequency (≤500 Hz) half-bridge leg in domestic induction cooktops.

IC Role / Device Role / Timing Role: High-side switch with integrated diode conducting freewheeling current during dead-time.

Use Value: Matched diode t_rr and IGBT turn-off timing prevent shoot-through in asymmetric bridge configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP3NC60HD	600 V, 3 A, TO-220 package; lower V_CE(sat) (1.1 V typ), no integrated diode	Requires external ultrafast diode; better for higher-frequency designs due to lower Q_G (12 nC)	Select when board space allows discrete diode placement and switching frequency exceeds 500 Hz.
FGB30N60UNDF	600 V, 30 A, D2PAK; higher current rating, higher V_CE(sat) (1.8 V max), no integrated diode	Designed for high-current inverters; lacks integrated diode and low-frequency optimization	Choose only when scaling to >10 A systems and adding external diode is acceptable.

Compared with STGP3NC60HD and FGB30N60UNDF, STGB3NB60SDT4 uniquely combines integrated diode, low V_CE(sat), and D2PAK thermal performance-making it optimal for cost-sensitive, low-frequency, space-constrained static switching where diode integration reduces BOM count and layout complexity.

Availability

STGB3NB60SDT4 is available at Aetrix Electronics and suitable for gas discharge lamp ballasts, static relay replacements, and motor start control requiring stable component supply and long-lifecycle support.

Supply support for STGB3NB60SDT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs, power devices, and MEMS sensors.

The PowerMESH™ IGBT product line targets industrial and appliance applications demanding robust, low-loss, surface-mount power switching with integrated protection and thermal efficiency.

FAQ

Is STGB3NB60SDT4 suitable for PWM motor control above 1 kHz?

No. The "S" suffix indicates low-frequency optimization: its tail current contributes significantly to E_off, and switching losses rise sharply above 500 Hz. For 1–20 kHz PWM, STGP3NC60HD or STGW30NC60WD are better suited due to faster turn-off and lower Q_G.

What is the maximum recommended gate resistor for reliable turn-on?

A 1 kΩ gate resistor is validated in the datasheet for 480 V/3 A switching. For robust noise immunity and controlled dV/dt, use 1–10 kΩ; values below 470 Ω risk excessive peak gate current (>30 mA), potentially damaging the gate oxide under transient conditions.

Does the integrated diode share the same thermal junction as the IGBT?

Yes. Both the IGBT and freewheeling diode are monolithically integrated on the same silicon die, ensuring matched thermal characteristics and eliminating thermal runaway risk between active and passive elements during repetitive inductive switching.

Can STGB3NB60SDT4 replace STGB10NC60HD in existing designs?

No. STGB10NC60HD is a 10 A, 600 V device with different V_CE(sat) (1.6 V max), Q_G (32 nC), and SOA. STGB3NB60SDT4 has lower current rating and higher switching loss at equivalent current-direct substitution risks thermal overload and insufficient peak current margin.

STGB3NB60SDT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 6 A

Current - Collector Pulsed (Icm):: 25 A

Vce(on) (Max) @ Vge, Ic:: 1.5V @ 15V, 3A

Power - Max:: 70 W

Switching Energy:: 1.15mJ (off)

Input Type:: Standard

Gate Charge:: 18 nC

Td (on/off) @ 25°C:: 125ns/3.4µs

Test Condition:: 480V, 3A, 1kOhm, 15V

Reverse Recovery Time (trr):: 1.7 µs

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STGB3NB60SDT4 FAQ

1.How can I place an order for STGB3NB60SDT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB3NB60SDT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB3NB60SDT4 reliable?

The price and inventory of STGB3NB60SDT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB3NB60SDT4 is usually 5 days.

3.What payment methods are accepted for STGB3NB60SDT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB3NB60SDT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB3NB60SDT4?

STGB3NB60SDT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB3NB60SDT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB3NB60SDT4?

For technical support, including STGB3NB60SDT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB3NB60SDT4 requirements.

6.How does Aetrix verify that STGB3NB60SDT4 is sourced from the original manufacturer or authorized distributors?

All STGB3NB60SDT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB3NB60SDT4 meets industry standards.

7.What is the process for return or replacement of STGB3NB60SDT4?

All STGB3NB60SDT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGB3NB60SDT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB3NB60SDT4 part is unused and in its original packaging.

Return procedure for STGB3NB60SDT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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