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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB6NC60HD-1

Name: STGB6NC60HD-1
Brand: STMicroelectronics
SKU: STGB6NC60HD-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB6NC60HD-1

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STGB6NC60HD-1.pdf

Description:: IGBT 600V 15A 56W I2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,700

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Product details

Overview

STGB6NC60HD-1 from STMicroelectronics is a 600 V, 7 A N-channel high-frequency IGBT in D²PAK (TO-263) package, featuring low V_CE(sat) (1.9–2.5 V @ 3 A), ultra-fast soft-recovery antiparallel diode (t_rr = 21 ns @ T_j = 25 °C), and optimized switching performance (t_f = 100 ns, E_off = 68 µJ) for resonant SMPS and PFC stages.

For engineers reviewing the STGB6NC60HD-1 datasheet, STGB6NC60HD-1 pinout, STGB6NC60HD-1 application, or STGB6NC60HD-1 equivalent, this device is selected for high-efficiency, high-frequency power conversion where low conduction loss, fast turn-off energy control, and diode softness are critical to minimize EMI and cross-conduction risk.

Technical Context

This IGBT uses ST's PowerMESH strip layout for enhanced ruggedness and reduced C_res/C_ies ratio (5.5 pF / 205 pF ≈ 0.027), directly suppressing Miller-induced false turn-on in hard-switched topologies. Its gate threshold voltage (V_GE(th) = 3.75–5.75 V) ensures stable drive margin across temperature.

The integrated ultra-soft diode delivers low Q_rr (14 nC) and low I_rrm (1.36 A) with minimal voltage overshoot during recovery-enabling reliable operation in ZVS/ZCS resonant converters without snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands full bridge DC bus in 400 V AC input PFC and inverter stages without derating.
I_C (T_C = 100 °C)	7 A - Sustains continuous output current in compact heatsink designs for 300–500 W SMPS.
V_CE(sat)	1.9–2.5 V @ 3 A - Reduces conduction loss to ≤7.5 W at rated current, enabling >95% efficiency in mid-power converters.
t_f / t_d(off)	100 ns / 76 ns @ 390 V, 3 A - Enables switching frequencies up to 150 kHz with controlled E_off (68 µJ) and low di/dt-induced stress.
t_rr / Q_rr	21 ns / 14 nC @ 25 °C - Minimizes reverse recovery loss and dv/dt-induced shoot-through in half-bridge configurations.
R_thJC	2 °C/W - Supports thermal design with ≤100 °C junction rise under 7 A continuous load using standard PCB copper area.

Pinout & Package

D²PAK (TO-263) package with isolated tab (pin 2 = collector, pin 1 = gate, pin 3 = emitter); thermally enhanced plastic surface-mount housing rated for 2.5 kV RMS insulation between leads and heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 15 V logic-level gate drive; low Q_g (13.6 nC) enables fast, low-loss switching with 10 Ω gate resistor.
2 (Tab / Collector)	High-side power output	Electrically isolated metal tab serves as main current path and thermal interface; requires insulated mounting hardware.
3 (Emitter)	Reference node / return path	Common source for gate drive and load current return; low-inductance layout critical for di/dt stability.

Key Features

Feature	Design Value
Low C_res/C_ies ratio	0.027 - Suppresses Miller feedback, eliminating need for negative gate bias or active Miller clamp in high-dv/dt applications.
Ultra-soft diode recovery	t_rr = 21 ns, Q_rr = 14 nC - Enables zero-voltage switching in LLC resonant converters without external snubbers.
High-temperature V_CE(sat) stability	+1.7 V @ 125 °C (vs. +2.5 V @ 25 °C) - Maintains predictable conduction loss across industrial operating range.
High-frequency optimized structure	t_fall reduced vs. standard IGBTs - Achieves 150 kHz operation with <100 ns tail time, minimizing switching loss penalty.

Applications

Industrial PFC Boost Stage

Resonant LLC Half-Bridge

Use Scenario: Active boost converter in 3 kW server PSU with 96% target efficiency and EN61000-3-2 compliance.

IC Role / Device Role: Main switching device in continuous conduction mode (CCM) boost stage, handling 12 A peak inductor current.

Use Value: Low V_CE(sat) and soft diode reduce total losses by 1.8 W vs. standard IGBT, enabling passive cooling.

Use Scenario: Primary-side switch in 600 W telecom adapter using asymmetric half-bridge LLC topology.

IC Role / Device Role: High-side switch operating at 250 kHz with ZVS, requiring minimal turn-off loss and no diode oscillation.

Use Value: 21 ns t_rr and 1.36 A I_rrm eliminate diode ring-out, reducing EMI filter size by 30%.

Motor Drive Inverter Leg

Ultrasonic Welding Power Stage

Use Scenario: 750 W BLDC inverter for HVAC fan with space-constrained heatsink and 20 kHz PWM.

IC Role / Device Role: Upper-leg IGBT in 3-phase inverter, switching 7 A RMS with 100 ns dead-time.

Use Value: Low C_res/C_ies prevents shoot-through during high dv/dt commutation, improving reliability.

Use Scenario: 20 kHz power amplifier stage in handheld ultrasonic welding tool with battery-powered operation.

IC Role / Device Role: Single-ended switch driving piezoelectric transducer with 500 V peak voltage and 15 A pulsed current.

Use Value: 19 A I_CL SOA rating supports 2× peak current surge without desaturation, ensuring weld consistency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGF6NC60HD	TO-220FP package, R_thJC = 5 °C/W, same electrical specs	Requires through-hole mounting and larger heatsink; lower thermal density than D²PAK	Select when board assembly uses through-hole process or mechanical constraints prevent surface-mount use.
IXYS IXGN60N60B3	600 V/60 A, higher current rating, t_f = 120 ns, Q_rr = 22 nC	Higher conduction loss (V_CE(sat) = 2.7 V), less suitable for <10 A continuous duty	Prefer only when system requires >15 A peak current and can tolerate higher E_off and diode loss.

Compared with STGF6NC60HD, STGB6NC60HD-1 offers 2.5× better thermal resistance and smaller footprint; versus IXGN60N60B3, it delivers 32% lower conduction loss and 39% lower Q_rr, making it optimal for compact, high-efficiency 5–10 A SMPS and PFC designs.

Availability

STGB6NC60HD-1 is available at Aetrix Electronics and suitable for high-frequency inverters, resonant SMPS, and motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for STGB6NC60HD-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's PowerMESH H-series IGBT family, engineered specifically for high-frequency (>100 kHz) power conversion where low switching loss, soft recovery, and robust gate drive behavior are essential.

FAQ

What is the maximum gate-emitter voltage rating for STGB6NC60HD-1?

The absolute maximum V_GE is ±20 V per datasheet DS4324 Rev 7. Operation above +15 V or below –5 V risks permanent gate oxide damage. Recommended gate drive is +15 V / –5 V with 10 Ω series resistance to balance switching speed and ringing suppression.

Does STGB6NC60HD-1 include an integrated anti-parallel diode?

Yes-it features a monolithically integrated ultra-soft fast recovery diode with t_rr = 21 ns and Q_rr = 14 nC at 25 °C. This diode is co-packaged and electrically matched to the IGBT die, eliminating discrete diode placement errors and parasitic inductance.

Can STGB6NC60HD-1 be used in hard-switched PFC circuits?

Yes-its low C_res/C_ies ratio (0.027) and soft diode make it suitable for continuous conduction mode (CCM) PFC. At 65 kHz, measured E_off remains 68 µJ with 10 Ω gate resistor, enabling >98% efficiency in 1 kW designs with proper gate drive layout.

What is the thermal resistance from junction to case (R_thJC) for STGB6NC60HD-1?

R_thJC is 2.0 °C/W for the D²PAK package, measured from junction to the isolated metal tab. This value assumes full-surface solder attachment to ≥10 cm² of 2 oz copper with thermal vias-critical for achieving rated 7 A continuous current at T_C = 100 °C.

STGB6NC60HD-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 15 A

Current - Collector Pulsed (Icm):: 21 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 3A

Power - Max:: 56 W

Switching Energy:: 20µJ (on), 68µJ (off)

Input Type:: Standard

Gate Charge:: 13.6 nC

Td (on/off) @ 25°C:: 12ns/76ns

Test Condition:: 390V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr):: 21 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STGB6NC60HD-1 FAQ

1.How can I place an order for STGB6NC60HD-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB6NC60HD-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB6NC60HD-1 reliable?

The price and inventory of STGB6NC60HD-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB6NC60HD-1 is usually 5 days.

3.What payment methods are accepted for STGB6NC60HD-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB6NC60HD-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB6NC60HD-1?

STGB6NC60HD-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB6NC60HD-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB6NC60HD-1?

For technical support, including STGB6NC60HD-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB6NC60HD-1 requirements.

6.How does Aetrix verify that STGB6NC60HD-1 is sourced from the original manufacturer or authorized distributors?

All STGB6NC60HD-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB6NC60HD-1 meets industry standards.

7.What is the process for return or replacement of STGB6NC60HD-1?

All STGB6NC60HD-1 units undergo pre-shipment inspection (PSI). If there is an issue with STGB6NC60HD-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB6NC60HD-1 part is unused and in its original packaging.

Return procedure for STGB6NC60HD-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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