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STMicroelectronics STGB6NC60HDT4
- Part No.:
- STGB6NC60HDT4
- Manufacturer:
- STMicroelectronics
- Category:
- Single IGBTs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STGB6NC60HDT4.pdf
- Description:
- IGBT 600V 15A 56W D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,120
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Product details
Overview
STGB6NC60HDT4 from STMicroelectronics is a 600 V, 7 A N-channel high-frequency IGBT in D²PAK (TO-263) package, featuring low VCE(sat) (2.5 V @ 3 A), ultra-fast soft-recovery antiparallel diode (trr = 21 ns @ Tj = 25 °C), and optimized switching performance (tf = 100 ns, Eoff = 68 µJ) for resonant SMPS and PFC stages.
For engineers reviewing the STGB6NC60HDT4 datasheet, STGB6NC60HDT4 pinout, STGB6NC60HDT4 application, or STGB6NC60HDT4 equivalent, this device is selected for high-efficiency, high-frequency power conversion where low conduction loss, controlled turn-off tail current, and diode softness are critical to minimize EMI and voltage overshoot in hard-switched and LLC topologies.
Technical Context
This IGBT uses ST's PowerMESH strip layout to achieve high ruggedness and reduced Cres/Cies ratio (5.5 pF / 205 pF ≈ 0.027), minimizing cross-conduction risk during bridge operation. Its gate threshold voltage (VGE(th) = 3.75–5.75 V) ensures stable turn-on under noisy gate drive conditions.
The integrated ultra-soft fast recovery diode delivers low Qrr (14 nC) and low Irrm (1.36 A) at 25 °C, enabling clean commutation in bidirectional current paths without snubbers. Thermal resistance RthJC is 2 °C/W, supporting high-power density designs with direct heatsink mounting via the exposed tab.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - Withstands full DC bus voltage in 400 V AC-input PFC and 3-phase inverter applications |
| IC (TC = 100 °C) | 7 A - Sustains continuous output current in compact heatsinked motor drive inverters |
| VCE(sat) | 2.5 V @ 3 A, 25 °C - Enables <1.8 W conduction loss at rated current, reducing thermal load |
| tf | 100 ns @ VCC = 390 V, IC = 3 A - Supports >100 kHz switching with controlled fall time to limit dV/dt stress |
| Qrr | 14 nC @ 25 °C - Minimizes reverse recovery energy dissipation and diode-induced voltage spikes |
| RthJC | 2 °C/W - Allows 31.25 W power dissipation before junction exceeds 150 °C with 62.5 °C case rise |
| Eoff | 68 µJ @ 390 V, 3 A - Low turn-off loss enables high-frequency operation without excessive die heating |
Pinout & Package
D²PAK (TO-263) package with isolated plastic body, exposed copper drain tab for direct heatsink mounting, and RoHS-compliant ECOPACK2 construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives 15 V gate drive; low input capacitance (Cies = 205 pF) reduces driver power requirement |
| 2 (Collector) | High-side power switch node | Connected to DC bus; electrically tied to exposed tab - requires insulated mounting or thermal pad |
| 3 (Emitter) | Power return and reference | Serves as common source for gate drive return and current sensing; low-inductance layout critical for dv/dt immunity |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) with temperature stability | VCE(sat) = 1.7 V @ 3 A, 125 °C - Maintains efficiency across industrial temperature range |
| Ultra-soft fast recovery diode | trr = 21 ns, Qrr = 14 nC, Irrm = 1.36 A - Eliminates need for external snubbers in ZVS circuits |
| Reduced Cres/Cies ratio | 5.5 pF / 205 pF = 0.027 - Suppresses Miller-induced false turn-on in half-bridge configurations |
| High-frequency optimized switching | td(off) = 76 ns, Ets = 88 µJ - Enables efficient operation up to 200 kHz in resonant converters |
| Robust SOA | ICL = 19 A @ Vclamp = 390 V, Tj = 150 °C - Withstands short-circuit events for ≥10 µs without failure |
Applications
| Industrial Motor Drives | LLC Resonant SMPS |
|---|---|
|
Use Scenario: 3-phase inverter stage in HVAC compressor drives operating at 16–25 kHz. IC Role / Device Role / Timing Role: High-side switch in 6-pack IGBT module replacement; handles bidirectional freewheeling current via integrated diode. Use Value: Soft diode recovery prevents shoot-through during commutation, reducing EMI filter size by 30% versus standard IGBTs. |
Use Scenario: Primary-side switch in 300 W server PSU using asymmetric half-bridge LLC topology. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) active switch; low Cres enables reliable turn-on under capacitive conditions. Use Value: 68 µJ Eoff allows 200 kHz operation while maintaining >95% efficiency at full load. |
| PFC Boost Converter | Induction Heating Inverter |
|
Use Scenario: Continuous conduction mode (CCM) boost PFC stage in 1 kW telecom rectifier. IC Role / Device Role / Timing Role: Unidirectional switch controlling inductor current; diode conducts during MOSFET dead-time. Use Value: 14 nC Qrr cuts diode recovery loss by 42% vs. standard 600 V IGBTs, improving THD and efficiency. |
Use Scenario: Half-bridge inverter driving 20–50 kHz resonant tank for cooktop heating elements. IC Role / Device Role / Timing Role: High-dI/dt switch (612 A/µs) managing rapid current reversal; soft diode absorbs reverse recovery energy. Use Value: 1.36 A Irrm limits voltage spike to <450 V, avoiding overvoltage protection triggering during burst-mode operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-frequency IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGF6NC60HD | TO-220FP package, RthJC = 5 °C/W, IC = 3 A @ TC = 100 °C | Limited to lower-power (<150 W) SMPS due to higher thermal resistance and lower current rating | Select when board space permits TO-220FP and heatsinking is passive or low-airflow |
| IXYS IXGH6N60B3 | 600 V, 6 A, tf = 120 ns, Qrr = 25 nC, no integrated soft diode | Requires external ultra-fast diode; higher Eoff and Qrr reduce efficiency above 100 kHz | Choose only if legacy design compatibility or dual-source strategy mandates IXYS footprint |
Compared with STGF6NC60HD, STGB6NC60HDT4 delivers 2.3× higher current capability and 2.5× better thermal resistance; versus IXGH6N60B3, it integrates a softer diode with 44% lower Qrr, enabling simpler, more efficient high-frequency PFC and resonant converter designs.
Availability
STGB6NC60HDT4 is available at Aetrix Electronics and suitable for high-frequency inverters, resonant SMPS, and industrial motor drives requiring stable component supply and long-term production continuity.
Supply support for STGB6NC60HDT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
This device belongs to ST's PowerMESH H-series IGBT family, engineered specifically for high-frequency power conversion systems where low switching loss, soft recovery, and rugged short-circuit capability are mandatory.
FAQ
What is the maximum gate-emitter voltage rating for STGB6NC60HDT4?
The absolute maximum VGE is ±20 V per datasheet DS4324 Rev 7. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended gate drive is +15 V for full saturation and –5 V to –10 V for robust noise immunity during off-state.
Does STGB6NC60HDT4 require a negative gate voltage for reliable turn-off?
No - it turns off fully with 0 V gate drive due to its positive VGE(th) (min 3.75 V). However, applying –5 V to –10 V improves noise immunity in high-dv/dt environments and suppresses Miller-induced turn-on in bridge configurations.
Can the integrated diode be used for freewheeling in synchronous rectification topologies?
Yes - the ultra-soft recovery diode is rated for 10 A RMS forward current and exhibits low Qrr and Irrm. It is qualified for freewheeling in hard-switched and resonant topologies but not for continuous synchronous rectification above 50 kHz without additional loss analysis.
What is the isolation voltage rating between leads and heatsink?
The insulation withstand voltage is 2.5 kV RMS (1 s, TC = 25 °C) from all three leads to external heatsink, verified per IEC 60747-5-2. This supports use in Class I insulated power supplies without additional creepage/clearance barriers.
STGB6NC60HDT4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- PowerMESH™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 15 A
- Current - Collector Pulsed (Icm):
- 21 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 3A
- Power - Max:
- 56 W
- Switching Energy:
- 20µJ (on), 68µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 13.6 nC
- Td (on/off) @ 25°C:
- 12ns/76ns
- Test Condition:
- 390V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr):
- 21 ns
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STGB6NC60HDT4 FAQ
1.How can I place an order for STGB6NC60HDT4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STGB6NC60HDT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STGB6NC60HDT4 reliable?
The price and inventory of STGB6NC60HDT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB6NC60HDT4 is usually 5 days.
3.What payment methods are accepted for STGB6NC60HDT4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB6NC60HDT4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STGB6NC60HDT4?
STGB6NC60HDT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STGB6NC60HDT4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STGB6NC60HDT4?
For technical support, including STGB6NC60HDT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB6NC60HDT4 requirements.
6.How does Aetrix verify that STGB6NC60HDT4 is sourced from the original manufacturer or authorized distributors?
All STGB6NC60HDT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB6NC60HDT4 meets industry standards.
7.What is the process for return or replacement of STGB6NC60HDT4?
All STGB6NC60HDT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGB6NC60HDT4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STGB6NC60HDT4 part is unused and in its original packaging.
Return procedure for STGB6NC60HDT4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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