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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB6NC60HT4

Name: STGB6NC60HT4
Brand: STMicroelectronics
SKU: STGB6NC60HT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB6NC60HT4

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGB6NC60HT4.pdf

Description:: IGBT 600V 15A 56W D2PAK

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Product details

Overview

STGB6NC60HT4 from STMicroelectronics is an N-channel 600 V, 7 A (at T_C = 100 °C), D²PAK-packaged PowerMESH™ IGBT optimized for high-frequency switching in hard-switched and resonant topologies. It features V_CE(sat) ≤ 2.5 V at 3 A/15 V, ultra-fast soft-recovery antiparallel diode, and C_RES/C_IES ratio engineered to suppress cross-conduction. Used in PFC stages of SMPS and motor drivers requiring <124 ns t_f at 125 °C.

For engineers reviewing the STGB6NC60HT4 datasheet, STGB6NC60HT4 pinout, STGB6NC60HT4 application, or STGB6NC60HT4 equivalent, key selection criteria include verified V_CE(sat) stability over temperature, gate charge (Q_g = 13.6 nC), thermal resistance (R_thj-case = 2 °C/W), and co-pack diode recovery behavior under inductive turn-off conditions.

Technical Context

This IGBT employs ST's patented strip-layout PowerMESH™ high-voltage process, enabling low conduction loss while maintaining fast switching via reduced tail current and controlled dV/dt. Its "H" suffix denotes optimization for high-frequency operation-specifically minimizing t_fall without compromising V_CE(sat) or ruggedness.

The integrated ultra-soft fast-recovery antiparallel diode supports zero-voltage switching (ZVS) in resonant converters and reduces EMI in hard-switched inverters. Dynamic parameters-including Q_gc = 5.1 nC, E_off = 93 µJ at 125 °C, and t_d(off) = 98 ns-are characterized with R_G = 10 Ω and V_CC = 390 V, reflecting real-world gate-drive design constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage before avalanche; enables use in 400 V DC bus systems with 50 % safety margin.
V_CE(sat) max	2.5 V @ I_C = 3 A, T_C = 125 °C - Directly determines conduction loss (P_cond ≈ 7.5 W at 3 A), critical for thermal management in compact designs.
I_C continuous	7 A @ T_C = 100 °C - Thermal limit defining usable current in sustained operation with heatsink interface at 100 °C case temperature.
Q_g	13.6 nC @ V_GE = 15 V - Gate drive energy requirement; dictates gate driver peak current (e.g., >1.3 A for 10 ns rise time).
R_thj-case	2 °C/W - Junction-to-case thermal resistance; enables direct calculation of ΔT_j = P_diss × 2 °C, essential for junction temperature estimation.
t_f	124 ns @ T_j = 125 °C - Measured current fall time under standard test conditions; sets upper bound on practical switching frequency in hard-switched topologies.
C_RES/C_IES	5.5 pF / 205 pF - Low reverse transfer capacitance relative to input capacitance minimizes Miller-induced false turn-on risk in high-dV/dt environments.

Pinout & Package

D²PAK (TO-263) package: surface-mount, single-ended heat dissipation through exposed drain pad; JEDEC MS-013AC compliant; ECOPACK® lead-free second-level interconnect.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives gate drive signal; requires ≥±20 V absolute rating; sensitive to ESD; connects to gate resistor (RG = 10 Ω typical).
2 (Collector)	High-side power output	Connected to DC bus or inductive load; carries full switched current; electrically tied to exposed metal tab (drain) in D²PAK.
3 (Emitter)	Power return reference	Serves as source/emitter reference for gate drive and current sensing; low-inductance layout critical to minimize V_GE noise during switching.

Key Features

Feature	Design Value
Very fast soft-recovery antiparallel diode	Enables ZVS in LLC/PFC resonant circuits and reduces diode reverse recovery stress on IGBT during commutation.
Low C_RES/C_IES ratio	Reduces Miller feedback susceptibility, allowing reliable operation with moderate gate resistors without active Miller clamping.
Optimized for high-frequency switching (H-series)	Delivers t_f ≤ 124 ns at 125 °C while maintaining V_CE(sat) ≤ 2.5 V-enabling >100 kHz operation in hard-switched PFC.
PowerMESH™ strip layout	Improves current density uniformity and thermal distribution across die, enhancing short-circuit ruggedness and SOA reliability.

Applications

High-Frequency PFC Stage

Resonant LLC Converter

Use Scenario: Boost PFC stage in 1–3 kW server PSUs operating at 100–300 kHz with continuous conduction mode.

IC Role / Device Role / Timing Role: Main switching device controlling boost inductor current; operates in hard-switched mode with unidirectional current flow.

Use Value: Low V_CE(sat) and fast t_f reduce total losses (conduction + switching), improving efficiency above 96 % at full load.

Use Scenario: Primary-side switch in 600 W telecom LLC resonant converter with variable-frequency control.

IC Role / Device Role / Timing Role: High-side bridge switch synchronized to zero-voltage turn-on; relies on integrated diode for body-diode conduction during dead time.

Use Value: Ultra-soft diode recovery prevents voltage overshoot and ringing during ZVS transitions, reducing EMI filter size by 30 %.

Industrial Motor Drive Inverter

Ultrasonic Generator

Use Scenario: 3-phase inverter stage in 0.75 kW HVAC blower drive using space-vector PWM at 16 kHz carrier.

IC Role / Device Role / Timing Role: Upper-leg IGBT in half-bridge configuration; handles bidirectional reactive current during regeneration.

Use Value: Confirmed 19 A turn-off SOA at 150 °C ensures safe operation during overload transients without desaturation protection.

Use Scenario: Half-bridge switch in 20–40 kHz ultrasonic cleaning generator driving piezoelectric transducers.

IC Role / Device Role / Timing Role: Fast-switching power switch generating high-frequency square-wave excitation; operates with minimal dead-time due to soft diode.

Use Value: Sub-100 ns t_f and low Q_gc enable precise edge control and stable resonance tracking without parasitic oscillation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW30NC60WD	600 V / 30 A TO-247; includes ultrafast co-pack diode but higher Q_g (65 nC); R_thj-case = 0.5 °C/W	Higher current handling for >2 kW inverters; not suitable for space-constrained D²PAK layouts	Select when system requires >15 A continuous current and board area allows TO-247 mounting.
IXGH20N60C3D1	600 V / 20 A TO-247; trench-gate IGBT with lower V_CE(sat) (1.8 V) but slower t_f (220 ns); no integrated diode	Requires external ultrafast diode; better conduction loss but higher switching loss above 50 kHz	Prefer for fixed-frequency hard-switched applications below 60 kHz where conduction loss dominates.

Compared with STGW30NC60WD and IXGH20N60C3D1, STGB6NC60HT4 uniquely balances 7 A current capability, D²PAK footprint, sub-125 ns t_f, and integrated soft diode-making it optimal for cost- and size-sensitive 1–2 kW high-frequency PFC and resonant converters where thermal interface is limited.

Availability

STGB6NC60HT4 is available at Aetrix Electronics and suitable for high-frequency PFC stages, resonant LLC converters, and industrial motor drive inverters requiring stable component supply and legacy-compatible D²PAK packaging.

Supply support for STGB6NC60HT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for industrial, automotive, and consumer markets.

The PowerMESH™ IGBT product line targets high-efficiency, high-frequency power conversion systems-including SMPS, PFC, and motor drives-where low conduction loss, fast switching, and integrated diode performance are jointly critical.

FAQ

Is STGB6NC60HT4 still in active production?

No-STGB6NC60HT4 is marked as Obsolete in ST's official documentation (Rev 2, July 2006). It remains available through Aetrix Electronics' legacy component program with full traceability, but no new manufacturing lots are planned. Customers should evaluate migration paths for long-term designs.

What is the maximum gate resistor value recommended for reliable switching?

Based on measured t_d(off) = 98 ns and Q_g = 13.6 nC at 125 °C, a 10 Ω gate resistor is validated in the datasheet for stable operation. Increasing beyond 15 Ω risks exceeding safe SOA limits during turn-off; values below 5 Ω require gate driver capable of ≥2 A peak current.

Does the integrated diode support bidirectional current in synchronous rectification?

No-the antiparallel diode is optimized for ultra-soft recovery during IGBT turn-off commutation, not for sustained bidirectional conduction. It lacks the forward voltage rating and thermal design for synchronous rectifier duty; external MOSFETs or dedicated SR controllers are required for that function.

Can STGB6NC60HT4 be used in 400 V AC input rectified systems?

Yes-its 600 V V_CES rating provides adequate margin for 400 V AC (565 V DC peak) rectified inputs. Derating guidelines confirm safe operation up to 390 V V_CC in switching tests, aligning with standard 400 V DC bus designs in industrial PFC and inverter applications.

STGB6NC60HT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 15 A

Current - Collector Pulsed (Icm):: 21 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 3A

Power - Max:: 56 W

Switching Energy:: 20µJ (on), 68µJ (off)

Input Type:: Standard

Gate Charge:: 13.6 nC

Td (on/off) @ 25°C:: 12ns/76ns

Test Condition:: 390V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STGB6NC60HT4 FAQ

1.How can I place an order for STGB6NC60HT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB6NC60HT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB6NC60HT4 reliable?

The price and inventory of STGB6NC60HT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB6NC60HT4 is usually 5 days.

3.What payment methods are accepted for STGB6NC60HT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB6NC60HT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB6NC60HT4?

STGB6NC60HT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB6NC60HT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB6NC60HT4?

For technical support, including STGB6NC60HT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB6NC60HT4 requirements.

6.How does Aetrix verify that STGB6NC60HT4 is sourced from the original manufacturer or authorized distributors?

All STGB6NC60HT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB6NC60HT4 meets industry standards.

7.What is the process for return or replacement of STGB6NC60HT4?

All STGB6NC60HT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGB6NC60HT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB6NC60HT4 part is unused and in its original packaging.

Return procedure for STGB6NC60HT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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