Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB7H60DF

Name: STGB7H60DF
Brand: STMicroelectronics
SKU: STGB7H60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGB7H60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGB7H60DF.pdf

Description:: IGBT 600V 14A 88W D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,512

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGB7H60DF from STMicroelectronics is a 600 V, 7 A trench gate field-stop IGBT with integrated ultrafast soft-recovery antiparallel diode in D²PAK (TO-263) package. It delivers 1.95 V V_CE(sat) at 7 A/25 °C, 136 ns diode reverse recovery time, and 5 µs short-circuit withstand capability - optimized for high-frequency motor controls and resonant-mode SMPS/PFC stages.

For engineers reviewing the STGB7H60DF datasheet, STGB7H60DF pinout, STGB7H60DF application, or STGB7H60DF equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, low R_thJC of 1.7 °C/W (IGBT), tight parameter distribution, and validated performance up to 175 °C junction temperature in hard-switched and ZVS/ZCS topologies.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to balance conduction loss (V_CE(sat) = 1.95 V typ.) and switching energy (E_on + E_off = 199 µJ typ. at 400 V/7 A). Its slightly positive V_CE(sat) temperature coefficient enables stable current sharing in parallel configurations without external ballasting resistors.

The co-packaged diode features soft recovery (Q_rr = 104 nC, t_rr = 136 ns at 25 °C), minimizing voltage overshoot and EMI in fast-switching converters. Dynamic parameters - including 30 ns turn-on delay, 24 ns off-voltage rise time, and 160 ns turn-off delay - are characterized with 47 Ω gate resistance under 400 V inductive load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage; supports 400 V DC bus designs with 50 % safety margin.
I_C (T_C = 100 °C)	7 A - Continuous collector current rating at case temperature 100 °C; defines thermal derating envelope.
V_CE(sat)	1.95 V (typ.) at 7 A/25 °C - Low saturation voltage reduces conduction loss in high-duty-cycle operation.
t_sc	3–5 µs - Short-circuit withstand time at V_CC ≤ 360 V; enables robust overcurrent protection in motor drives.
R_thJC (IGBT)	1.7 °C/W - Junction-to-case thermal resistance; enables high power density with minimal heatsink requirement.
Q_rr	104 nC (25 °C) - Reverse recovery charge of integrated diode; directly impacts turn-on loss and snubber sizing.
E_ts	199 µJ (typ.) - Total switching energy per cycle at 400 V/7 A; determines maximum practical switching frequency.

Pinout & Package

D²PAK (TO-263) package with isolated tab; thermally enhanced plastic surface-mount housing rated for 2.5 kV RMS insulation between leads and heat sink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Accepts ±20 V gate drive; 46 nC total gate charge requires robust gate driver with ≥1 A peak sourcing/sinking capability.
2 (Collector)	High-side switch node	Connected to DC bus or transformer primary; carries full load current and must be routed with low-inductance layout.
3 (Emitter)	Power return / reference	Serves as common emitter for IGBT and cathode for integrated diode; requires low-impedance connection to ground/power plane.
Tab (Drain/Collector)	Thermal & electrical connection	Electrically tied to collector (pin 2); must be mounted to heatsink with electrically insulating but thermally conductive interface.

Key Features

Feature	Design Value
Trench gate field-stop structure	Enables simultaneous optimization of V_CE(sat) and switching speed - critical for >20 kHz PFC and servo drive efficiency.
Ultrafast soft-recovery antiparallel diode	136 ns t_rr, 2.25 A I_rrm, Q_rr = 104 nC - Reduces turn-on loss and voltage spikes during commutation in bridge legs.
Positive V_CE(sat) temperature coefficient	Ensures inherent current balancing in parallel IGBT configurations without external emitter resistors or active current sharing.
Short-circuit rated (5 µs)	Supports hardware-based fault response in motor control inverters without requiring sub-microsecond detection circuitry.
Low R_thJC (1.7 °C/W)	Allows 88 W total power dissipation at T_C = 25 °C - enables compact thermal design in space-constrained industrial drives.

Applications

Industrial Motor Drives

Resonant LLC PFC Stages

Use Scenario: 3-phase inverter stage in HVAC compressors and pump VFDs operating at 8–20 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side IGBT switch with integrated freewheeling diode in 6-pack bridge configuration; handles bidirectional reactive current during PWM commutation.

Use Value: Soft diode recovery minimizes dv/dt-induced gate oscillation; 175 °C max junction rating supports sealed enclosure operation without forced air cooling.

Use Scenario: Primary-side switch in 300–500 W server PSU LLC resonant converter with variable-frequency control.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-capable main switch; leverages low C_oss (51 pF) and fast t_r(Voff) (24 ns) to maintain resonance across wide load range.

Use Value: 199 µJ total switching energy enables >300 kHz operation while maintaining <1.5 W conduction loss at full load.

Hard-Switched SMPS

UPS Inverter Stage

Use Scenario: 1–3 kW telecom rectifier using phase-shifted full-bridge topology with fixed 100 kHz switching.

IC Role / Device Role / Timing Role: Lag-leg IGBT subjected to hard-commutation; relies on short-circuit ruggedness and tight V_CE(sat) distribution for consistent thermal stress.

Use Value: 5 µs t_sc allows reliable overcurrent shutdown via gate driver desaturation detection; 1.7 °C/W R_thJC simplifies thermal interface design.

Use Scenario: Output H-bridge in online double-conversion UPS delivering clean 50/60 Hz sine wave with <5 % THD.

IC Role / Device Role / Timing Role: Bidirectional switching element handling both inverter and bypass modes; integrated diode conducts regenerative energy during line switchover.

Use Value: 2.1 V V_F (max) at 7 A ensures low conduction loss during battery discharge; 154 ns t_rr at 175 °C prevents shoot-through risk during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGF7H60DF	TO-220FP package; R_thJC = 6.2 °C/W (IGBT); 24 W P_TOT at T_C = 25 °C	Limited to lower-power (<500 W) or forced-air-cooled designs due to higher thermal resistance	Select when through-hole mounting, lower cost, or legacy board compatibility is prioritized over power density.
STGP7H60DF	TO-220 package; R_thJC = 1.7 °C/W (same as STGB7H60DF); no isolation rating (V_ISO not specified)	Requires insulated mounting hardware for high-voltage isolation; unsuitable for direct heatsink contact without barrier	Choose for cost-sensitive industrial inverters where creepage/clearance is managed externally and surface-mount is not required.

Compared with STGF7H60DF and STGP7H60DF, STGB7H60DF offers superior thermal performance (1.7 °C/W) and 2.5 kV isolation in a surface-mount D²PAK - making it optimal for high-density, high-reliability motor drives and resonant converters where board space and thermal management are critical.

Availability

STGB7H60DF is available at Aetrix Electronics and suitable for industrial motor drives, resonant-mode SMPS, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STGB7H60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGB7H60DF belongs to the H-series IGBT portfolio - engineered specifically for high-efficiency, high-frequency power conversion systems where trade-offs between conduction loss, switching speed, and ruggedness must be precisely balanced.

FAQ

What gate drive voltage is recommended for STGB7H60DF?

STMicroelectronics specifies ±20 V absolute maximum gate-emitter voltage. For reliable operation, use V_GE = +15 V (turn-on) and –5 V to –10 V (turn-off). A 15 V gate drive achieves 1.95 V V_CE(sat) at 7 A/25 °C while maintaining sufficient noise margin against spurious turn-on. Gate resistor selection must limit peak gate current to <±2 A during switching transients.

Does STGB7H60DF require an external freewheeling diode?

No. STGB7H60DF integrates an ultrafast soft-recovery antiparallel diode with 136 ns reverse recovery time and 104 nC Q_rr at 25 °C. This diode is electrically and thermally co-located with the IGBT die, enabling full-bridge and half-bridge topologies without discrete diodes - reducing PCB area, parasitic inductance, and bill-of-materials cost.

How does STGB7H60DF perform at elevated junction temperatures?

At T_J = 175 °C, V_CE(sat) increases to 1.70 V (max), t_sc remains ≥3 µs, and diode V_F drops to 1.15 V. The device maintains full specification compliance across –55 °C to +175 °C junction range, with positive V_CE(sat) coefficient ensuring stable paralleling behavior even under thermal imbalance.

Can STGB7H60DF be paralleled with other IGBTs for higher current capacity?

Yes - its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution (±5 % typical) enable safe paralleling without emitter ballast resistors. ST recommends matched gate drive networks (identical RG, trace length, and layout symmetry) and shared heatsink mounting to minimize thermal gradients and ensure current sharing within ±10 % across units.

STGB7H60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 14 A

Current - Collector Pulsed (Icm):: 28 A

Vce(on) (Max) @ Vge, Ic:: 1.95V @ 15V, 7A

Power - Max:: 88 W

Switching Energy:: 99µJ (on), 100µJ (off)

Input Type:: Standard

Gate Charge:: 46 nC

Td (on/off) @ 25°C:: 30ns/160ns

Test Condition:: 400V, 7A, 47Ohm, 15V

Reverse Recovery Time (trr):: 136 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STGB7H60DF FAQ

1.How can I place an order for STGB7H60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB7H60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB7H60DF reliable?

The price and inventory of STGB7H60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB7H60DF is usually 5 days.

3.What payment methods are accepted for STGB7H60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB7H60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB7H60DF?

STGB7H60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB7H60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB7H60DF?

For technical support, including STGB7H60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB7H60DF requirements.

6.How does Aetrix verify that STGB7H60DF is sourced from the original manufacturer or authorized distributors?

All STGB7H60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB7H60DF meets industry standards.

7.What is the process for return or replacement of STGB7H60DF?

All STGB7H60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGB7H60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB7H60DF part is unused and in its original packaging.

Return procedure for STGB7H60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…