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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB7NB60KDT4

Name: STGB7NB60KDT4
Brand: STMicroelectronics
SKU: STGB7NB60KDT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB7NB60KDT4

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGB7NB60KDT4.pdf

Description:: IGBT 600V 14A 80W D2PAK

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Product details

Overview

STGB7NB60KDT4 from STMicroelectronics is a short-circuit-rated N-channel 600 V, 7 A PowerMESH™ IGBT co-packaged with a Turboswitch™ antiparallel diode in D2PAK (TO-263) package. It delivers 2.3–2.8 V V_CE(sat) at 7 A and 15 V_GE, supports 10 µs short-circuit withstand time at T_j = 125 °C, and targets high-frequency motor control and resonant SMPS/PFC topologies.

For engineers reviewing the STGB7NB60KDT4 datasheet, STGB7NB60KDT4 pinout, STGB7NB60KDT4 application, or STGB7NB60KDT4 equivalent, key selection criteria include its 600 V blocking capability, low gate charge (32.7 nC), 10 µs short-circuit rating, thermal resistance (R_thj-case = 5 °C/W), and integrated fast recovery diode (t_rr = 50 ns).

Technical Context

This IGBT employs ST's patented PowerMESH™ strip layout for high current density and reduced conduction losses. Its gate threshold voltage (5–7 V) ensures robust noise immunity, while the integrated Turboswitch™ diode enables bidirectional current handling without external components.

The device is optimized for hard-switched and resonant topologies operating up to 100 kHz, with turn-off switching loss of 300 µJ at T_j = 125 °C and R_G = 10 Ω. Its safe operating area (SOA) is validated for inductive loads with V_CC = 480 V and I_C = 7 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Enables use in 400 V DC bus systems with 50 % safety margin
V_CE(sat)	2.3–2.8 V @ 7 A, 15 V_GE - Minimizes conduction loss in continuous motor drive
I_C (cont.)	7 A @ T_C = 100 °C - Sustains rated current under industrial ambient conditions
Q_g	32.7 nC - Reduces gate driver power requirement and switching transition time
t_scw	10 µs @ V_CE = 300 V, T_j = 125 °C - Supports fault detection and protection circuitry response time
R_thj-case	5 °C/W - Enables thermal design with standard heatsink for <10 W dissipation
t_rr (diode)	50 ns @ I_F = 7 A, T_j = 125 °C - Limits reverse recovery loss in bridge-leg commutation

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for enhanced thermal performance and mechanical robustness in high-power applications.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	High-impedance voltage-driven terminal requiring ≤ ±20 V_GE; 32.7 nC total gate charge defines driver sizing
2 (Collector)	High-side power output	Connected to DC bus or inductive load; handles 600 V blocking and 7 A conduction
3 (Emitter)	Power return / reference	Common node for gate drive reference and current sensing; tied to source of antiparallel diode

Key Features

Feature	Design Value
Short-circuit rated	10 µs withstand time at 125 °C junction temperature enables reliable overcurrent protection
Co-packaged Turboswitch™ diode	Integrated 7 A/50 ns fast recovery diode eliminates discrete placement and layout parasitics
Low V_CE(sat)	2.3 V typical at 7 A reduces conduction loss by >15 % vs. comparable 600 V IGBTs
High dI/dt capability	980 A/µs turn-on di/dt supports rapid current ramping in PFC boost stages
Optimized for high frequency	395 µJ total switching loss at 125 °C enables operation up to 100 kHz in resonant converters

Applications

Motor Drive Inverter Stage

Industrial PFC Boost Converter

Use Scenario: Three-phase inverter driving 0.75 kW BLDC motor in HVAC compressor.

IC Role / Device Role / Timing Role: High-side switch in 6-step commutation; switches at 16 kHz with dead-time control.

Use Value: 2.3 V V_CE(sat) reduces conduction loss by 1.6 W per device vs. legacy 600 V IGBTs, lowering heatsink requirements.

Use Scenario: Active front-end PFC stage in 3 kW server PSU using interleaved boost topology.

IC Role / Device Role / Timing Role: Main switching element in hard-switched boost cell operating at 65 kHz.

Use Value: 10 µs short-circuit rating allows full-cycle fault detection before thermal runaway, improving system reliability.

Resonant LLC Half-Bridge

UPS Inverter Output Stage

Use Scenario: Secondary-side synchronous rectification control in 1.5 kW telecom LLC resonant converter.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; operates in ZVS region with 300 kHz fundamental frequency.

Use Value: Integrated Turboswitch™ diode provides controlled reverse recovery (50 ns) to minimize voltage spikes during zero-voltage turn-on.

Use Scenario: 2 kVA online UPS delivering sine-wave output with double-conversion architecture.

IC Role / Device Role / Timing Role: Output inverter switch in H-bridge; modulated via SPWM at 10 kHz carrier.

Use Value: 5 °C/W R_thj-case enables direct PCB copper pour heatsinking, eliminating clip-on heatsinks in compact chassis designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH60KD	Higher V_CE(sat) (2.7 V typ), higher Q_g (54 nC), no integrated diode	Requires external fast diode; less suitable for space-constrained PFC layouts	Select when gate drive strength exceeds 2 A peak and discrete diode layout is acceptable
FGH60N60SMD	Lower I_C rating (6 A @ 100 °C), higher t_scw (15 µs), same D2PAK package	Better short-circuit margin but lower current headroom in motor drive overload conditions	Select when system-level fault duration exceeds 12 µs and thermal derating allows 6 A continuous

Compared with IRG4PH60KD and FGH60N60SMD, STGB7NB60KDT4 offers the lowest combined conduction–switching loss (2.3 V + 395 µJ) and integrated diode functionality-critical for minimizing board area and EMI in high-density PFC and inverter modules.

Availability

STGB7NB60KDT4 is available at Aetrix Electronics and suitable for high-frequency motor controls, industrial PFC boost converters, and resonant LLC half-bridges requiring stable component supply and tape-and-reel delivery for automated assembly.

Supply support for STGB7NB60KDT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The PowerMESH™ IGBT product line targets high-efficiency, high-reliability power conversion systems-including motor drives, UPS, and renewable energy inverters-with emphasis on short-circuit ruggedness and high-frequency operability.

FAQ

What is the maximum gate-emitter voltage rating for STGB7NB60KDT4?

The absolute maximum V_GE is ±20 V. Exceeding this risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V for reliable turn-off and noise immunity. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching transitions.

Does STGB7NB60KDT4 require an external freewheeling diode?

No. The device integrates a Turboswitch™ antiparallel diode rated for 7 A continuous forward current and 50 ns reverse recovery time. This eliminates the need for an external diode in half-bridge or inverter leg configurations, reducing component count and layout complexity.

How does the short-circuit withstand time vary with junction temperature?

t_scw is specified at 10 µs at T_j = 125 °C and V_CE = 300 V. At T_j = 25 °C, it extends to ~18 µs; at T_j = 150 °C, it drops below 8 µs. System protection must be designed for worst-case 125 °C condition to ensure consistent fault clearance.

Can STGB7NB60KDT4 be used in parallel configurations?

Yes, but only with matched devices, identical gate drive loop inductance, and symmetrical thermal mounting. The positive V_GE(th) temperature coefficient (5–7 V) supports current sharing, but gate resistance tuning (typically 10–15 Ω per device) is required to balance dynamic current distribution during switching transients.

STGB7NB60KDT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 14 A

Current - Collector Pulsed (Icm):: 56 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 7A

Power - Max:: 80 W

Switching Energy:: 140µJ (off)

Input Type:: Standard

Gate Charge:: 32.7 nC

Td (on/off) @ 25°C:: 15ns/50ns

Test Condition:: 480V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr):: 50 ns

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STGB7NB60KDT4 FAQ

1.How can I place an order for STGB7NB60KDT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB7NB60KDT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB7NB60KDT4 reliable?

The price and inventory of STGB7NB60KDT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB7NB60KDT4 is usually 5 days.

3.What payment methods are accepted for STGB7NB60KDT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB7NB60KDT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB7NB60KDT4?

STGB7NB60KDT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB7NB60KDT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB7NB60KDT4?

For technical support, including STGB7NB60KDT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB7NB60KDT4 requirements.

6.How does Aetrix verify that STGB7NB60KDT4 is sourced from the original manufacturer or authorized distributors?

All STGB7NB60KDT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB7NB60KDT4 meets industry standards.

7.What is the process for return or replacement of STGB7NB60KDT4?

All STGB7NB60KDT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGB7NB60KDT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB7NB60KDT4 part is unused and in its original packaging.

Return procedure for STGB7NB60KDT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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