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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB7NC60HDT4

Name: STGB7NC60HDT4
Brand: STMicroelectronics
SKU: STGB7NC60HDT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB7NC60HDT4

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGB7NC60HDT4.pdf

Description:: IGBT 600V 25A 80W D2PAK

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Product details

Overview

STGB7NC60HDT4 from STMicroelectronics is a 600 V, 14 A very fast IGBT in D²PAK (TO-263) package, featuring low V_CE(sat) (2.5 V @ 7 A), ultra-fast soft-recovery antiparallel diode (t_rr = 37 ns), and optimized C_res/C_ies ratio to prevent cross-conduction - deployed in high-frequency PFC stages of industrial SMPS.

For engineers reviewing the STGB7NC60HDT4 datasheet, STGB7NC60HDT4 pinout, STGB7NC60HDT4 application, or STGB7NC60HDT4 equivalent, key selection criteria include switching energy (E_on = 95 µJ, E_off = 115 µJ @ 390 V/7 A), thermal resistance (R_thJC = 1.56 °C/W), and diode recovery robustness under hard-switched resonant topologies.

Technical Context

This IGBT employs ST's PowerMESH process to balance conduction loss and switching speed, enabling operation up to ~100 kHz in hard-switched PFC while maintaining safe SOA margins. Its gate threshold voltage (V_GE(th) = 3.75–5.75 V) ensures stable turn-on with standard 15 V gate drivers.

The integrated ultra-soft diode exhibits low Q_rr (40 nC) and minimal reverse recovery current (I_rrm = 2.1 A), reducing voltage overshoot and EMI in bridge-leg configurations. Dynamic parameters are characterized at V_CC = 390 V, R_G = 10 Ω, and T_J = 25 °C/125 °C for design margining.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands full DC bus in 400 V AC-input PFC and motor drive inverters.
I_C (T_C = 100 °C)	14 A - Continuous output current capability at junction temperature limit (T_J ≤ 150 °C).
V_CE(sat)	2.5 V @ 7 A, 150 °C - Low conduction loss enables <1.8 W static dissipation at rated current.
t_r, t_f	8.5 ns / 60 ns @ 25 °C - Fast current transitions support high-frequency switching with reduced overlap loss.
Q_g	48 nC (max) - Gate charge determines driver strength requirement (e.g., ≥2 A peak for 100 ns turn-on).
R_thJC	1.56 °C/W - Enables 50 °C ΔT rise at 80 W total dissipation, supporting compact heatsink designs.
t_rr	37 ns @ 125 °C - Ultra-fast diode recovery minimizes commutation stress in half-bridge synchronous rectification.

Pinout & Package

D²PAK (TO-263) package with isolated tab (electrically connected to collector); thermally enhanced plastic surface-mount housing suitable for automated reflow assembly and high-power density layouts.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance MOS-controlled input; requires 15 V drive for full saturation and low V_CE(sat).
2 (C)	Collector	Main power terminal; electrically tied to exposed metal tab for low-inductance, low-thermal-resistance path.
3 (E)	Emitter	Reference node for gate drive and current sensing; separate from collector tab to enable Kelvin emitter layout.

Key Features

Feature	Design Value
Low V_CE(sat)	2.5 V @ 7 A, 150 °C - Reduces conduction loss by >25% vs. standard 600 V IGBTs in continuous PFC operation.
Ultra-soft diode	t_rr = 37 ns, Q_rr = 40 nC - Eliminates voltage spikes during diode commutation in LLC resonant converters.
C_res/C_ies ratio	17 pF / 720 pF = 0.024 - Minimizes Miller-induced false turn-on risk in high-dV/dt bridge applications.
PowerMESH technology	Optimized cell pitch and trench geometry - Delivers simultaneous improvement in switching speed and on-state voltage.

Applications

Industrial PFC Module

Server PSU Half-Bridge

Use Scenario: Active front-end rectifier in 3 kW telecom/server PSUs operating at 70–100 kHz.

IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) boost PFC stage; handles 14 A RMS input current.

Use Value: Low E_off (115 µJ) and soft diode reduce snubber losses and EMI filter size by 30% vs. legacy IGBTs.

Use Scenario: High-efficiency LLC resonant converter primary-side switch in 1U rack-mounted power supplies.

IC Role / Device Role / Timing Role: Upper-leg IGBT in asymmetrical half-bridge; commutates at zero-voltage switching (ZVS) boundary.

Use Value: 37 ns t_rr ensures clean ZVS transition without shoot-through, enabling >96% efficiency at full load.

Motor Drive Inverter Stage

Induction Heating Inverter

Use Scenario: 1.5 kW variable-speed drive for HVAC compressors using space-vector PWM at 8–16 kHz.

IC Role / Device Role / Timing Role: Phase-leg switch handling 14 A peak motor current; coordinated with complementary device and freewheeling diode.

Use Value: 1.56 °C/W R_thJC allows direct mounting to shared heatsink with gate driver IC, simplifying thermal management.

Use Scenario: 2.5 kW resonant inverter for domestic induction cooktops operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Series-resonant tank switch subjected to high di/dt (>1 kA/µs) and repetitive hard commutation.

Use Value: Low C_res/C_ies ratio prevents spurious turn-on during high dv/dt across collector-emitter during zero-current switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar very fast IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP7NC60HD	Same die, TO-220 package; R_thJC = 1.56 °C/W identical, but R_thJA = 62.5 °C/W vs. D²PAK's 62.5 °C/W - no thermal advantage; higher mounting inductance.	Preferred for prototyping or low-volume through-hole assembly; unsuitable for high-density SMT production.	Select when manual soldering or socket-based testing is required; avoid for >50 kHz designs due to lead inductance.
IXYS IXGH12N60B3D1	600 V/12 A; V_CE(sat) = 2.4 V @ 6 A, but t_rr = 65 ns and Q_rr = 110 nC - slower, higher diode loss.	Acceptable in lower-frequency (<50 kHz) motor drives where diode softness is less critical.	Choose only if supply chain constraints preclude ST parts; expect +15% switching loss and larger snubbers.

Compared with STGP7NC60HD and IXGH12N60B3D1, STGB7NC60HDT4 delivers superior high-frequency performance via its 37 ns diode recovery and optimized capacitance profile - making it the only option qualified for >80 kHz hard-switched PFC and resonant inverter designs requiring minimal EMI and thermal footprint.

Availability

STGB7NC60HDT4 is available at Aetrix Electronics and suitable for industrial PFC modules, server PSU half-bridges, and motor drive inverter stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STGB7NC60HDT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This IGBT belongs to ST's PowerMESH H-series, engineered specifically for high-frequency switching in energy-efficient power conversion systems - emphasizing low-loss operation above 50 kHz while maintaining ruggedness in harsh thermal and electrical environments.

FAQ

What gate resistor value is recommended for STGB7NC60HDT4 in a 100 kHz PFC application?

A 10 Ω gate resistor is validated per datasheet test conditions (V_CC = 390 V, I_C = 7 A) and balances switching speed against gate oscillation risk. At 100 kHz, this yields t_d(on) ≈ 18.5 ns and t_f ≈ 60 ns - sufficient for ZVS-assisted operation while limiting di/dt-induced noise. Lower values (≤5 Ω) require careful PCB layout to avoid ringing.

Can STGB7NC60HDT4 replace STGP7NC60HD in an existing TO-220 design?

No direct drop-in replacement: STGB7NC60HDT4 uses D²PAK (TO-263) with different pad layout, thermal interface, and leadframe inductance. While electrically identical, mechanical redesign is required - including footprint revision, solder paste stencil update, and thermal interface validation due to altered case-to-heatsink contact area and pressure distribution.

Does the integrated diode support synchronous rectification in LLC converters?

Yes - its ultra-soft recovery (t_rr = 37 ns, Q_rr = 40 nC) and low forward voltage (V_F = 1.3 V @ 3.5 A) enable reliable body-diode conduction during dead-time intervals in asymmetric half-bridge LLC topologies, eliminating need for external SiC Schottky diodes in cost-sensitive 2–3 kW designs.

What is the maximum allowable gate-emitter voltage during transient conditions?

The absolute maximum V_GE is ±20 V per datasheet Table 1. Operation beyond ±15 V risks irreversible gate oxide damage. Transient overshoot must be clamped below ±18 V using TVS diodes or active gate control; sustained exposure above ±16 V degrades long-term reliability even if within datasheet limits.

STGB7NC60HDT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 25 A

Current - Collector Pulsed (Icm):: 50 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 7A

Power - Max:: 80 W

Switching Energy:: 95µJ (on), 115µJ (off)

Input Type:: Standard

Gate Charge:: 35 nC

Td (on/off) @ 25°C:: 18.5ns/72ns

Test Condition:: 390V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr):: 37 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STGB7NC60HDT4 FAQ

1.How can I place an order for STGB7NC60HDT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB7NC60HDT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB7NC60HDT4 reliable?

The price and inventory of STGB7NC60HDT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB7NC60HDT4 is usually 5 days.

3.What payment methods are accepted for STGB7NC60HDT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB7NC60HDT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB7NC60HDT4?

STGB7NC60HDT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB7NC60HDT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB7NC60HDT4?

For technical support, including STGB7NC60HDT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB7NC60HDT4 requirements.

6.How does Aetrix verify that STGB7NC60HDT4 is sourced from the original manufacturer or authorized distributors?

All STGB7NC60HDT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB7NC60HDT4 meets industry standards.

7.What is the process for return or replacement of STGB7NC60HDT4?

All STGB7NC60HDT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGB7NC60HDT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB7NC60HDT4 part is unused and in its original packaging.

Return procedure for STGB7NC60HDT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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