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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGB7NC60HT4

Name: STGB7NC60HT4
Brand: STMicroelectronics
SKU: STGB7NC60HT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGB7NC60HT4

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STGB7NC60HT4.pdf

Description:: IGBT 600V 25A 80W D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGB7NC60HT4 from STMicroelectronics is a 600 V, 14 A very fast IGBT in D²PAK (TO-263) package, featuring low V_CE(sat) (2.5 V @ 7 A, 25 °C), ultra-fast soft-recovery antiparallel diode (t_rr = 37 ns), and low C_res/C_ies ratio (17/720 pF) to suppress cross-conduction-designed for high-frequency hard-switched and resonant SMPS, PFC, and motor drive inverters.

For engineers reviewing the STGB7NC60HT4 datasheet, STGB7NC60HT4 pinout, STGB7NC60HT4 application, or STGB7NC60HT4 equivalent, this device requires attention to gate drive strength (Q_g = 48 nC), thermal design (R_thJC = 1.56 °C/W), diode recovery behavior (Q_rr = 40 nC), and safe operating area limits at TJ = 150 °C.

Technical Context

This IGBT employs ST's PowerMESH process to optimize switching speed and conduction loss trade-off, enabling operation up to ~100 kHz in hard-switched topologies and higher in resonant configurations. Its dynamic parameters-including t_d(off) = 72 ns, t_f = 60 ns, and E_off = 150 µJ-are characterized at V_CC = 390 V, I_C = 7 A, R_G = 10 Ω, and T_J = 25 °C.

The integrated ultra-soft diode exhibits low reverse recovery charge (Q_rr = 40 nC) and peak reverse current (I_rrm = 2.1 A) under dI/dt = 100 A/µs, minimizing voltage overshoot and EMI in bridge-leg commutation. Gate threshold voltage (V_GE(th)) ranges 3.75–5.75 V, supporting robust TTL/CMOS-compatible drive with margin against spurious turn-on.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 600 V in boost PFC or inverter half-bridges without breakdown.
I_C (T_C = 100 °C)	14 A - Continuous collector current rating at case temperature 100 °C, defining usable output power in thermally constrained designs.
V_CE(sat)	2.5 V @ 7 A, 25 °C - Low on-state voltage drop reduces conduction losses and heatsink requirements in high-duty-cycle operation.
t_rr (diode)	37 ns @ I_F = 7 A, dI/dt = 100 A/µs - Ultra-fast reverse recovery minimizes switching loss and voltage spike during freewheeling transitions.
Q_g	48 nC - Total gate charge determines required driver peak current (e.g., >4.8 A for 10 ns rise time) and gate resistor selection.
R_thJC	1.56 °C/W - Junction-to-case thermal resistance enables accurate heatsink sizing when mounting to copper baseplate or heatsink.
E_off	150 µJ @ V_CE = 390 V, I_C = 7 A - Turn-off energy defines switching loss contribution at target frequency and influences driver dissipation.

Pinout & Package

D²PAK (TO-263) package with isolated tab (electrically connected to collector), standard 3-pin layout optimized for high-current PCB mounting and thermal transfer via backside metal tab.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring low-impedance drive; sensitive to noise due to V_GE(th) = 3.75–5.75 V; must be clamped to avoid overvoltage.
2 (C)	Collector	Main high-side current path; electrically tied to exposed metal tab for thermal conduction and low-inductance connection to DC bus.
3 (E)	Emitter	Return path for load current; referenced to driver ground; layout must minimize stray inductance to suppress V_CE spikes during switching.

Key Features

Feature	Design Value
Low V_CE(sat)	2.5 V @ 7 A, 25 °C - Reduces conduction loss by >20% vs. standard 600 V IGBTs, improving efficiency in continuous conduction mode PFC.
Ultra-soft diode recovery	t_rr = 37 ns, Q_rr = 40 nC - Enables zero-voltage switching (ZVS) compatibility and lowers EMI in LLC resonant converters.
Low C_res/C_ies ratio	17/720 pF - Minimizes Miller-induced cross-conduction risk in half-bridge configurations without complex gate drive timing compensation.
PowerMESH trench-gate structure	Optimized carrier lifetime control - Balances switching speed (t_f = 60 ns) and tail current (included in E_off) for predictable loss partitioning.

Applications

Industrial Motor Drives

High-Frequency SMPS

Use Scenario: 3-phase inverter stage in HVAC compressor drives operating at 8–16 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device in leg topology; handles bidirectional current flow via integrated diode during PWM dead-time.

Use Value: Soft diode recovery prevents shoot-through during commutation; low V_CE(sat) maintains <1.5 W conduction loss at 10 A RMS.

Use Scenario: Primary-side switch in 1 kW telecom rectifier with active clamp forward or phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-side switching element synchronized to 100–200 kHz carrier; manages hard-switched turn-on and ZVS-assisted turn-off.

Use Value: 37 ns t_rr and 40 nC Q_rr reduce voltage overshoot to <15 V above bus, eliminating need for snubbers.

Active PFC Boost Stage

UPS Inverter Output Stage

Use Scenario: Critical conduction mode (CrM) or continuous conduction mode (CCM) boost converter in 3 kW server PSU.

IC Role / Device Role / Timing Role: Unidirectional switch conducting during duty cycle; diode freewheels during off-time with minimal reverse recovery loss.

Use Value: 150 µJ E_off and 95 µJ E_on enable >98.2% peak efficiency at 100 kHz with optimized gate drive.

Use Scenario: H-bridge output stage in online double-conversion UPS delivering clean 50/60 Hz sine wave to critical loads.

IC Role / Device Role / Timing Role: Bidirectional switching device handling both positive and negative half-cycles; diode conducts reactive current during zero-crossings.

Use Value: 1.56 °C/W R_thJC allows direct mounting to aluminum heatsink, sustaining 14 A continuous output with ΔT < 40 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP7NC60HD	Same die, TO-220 package; R_thJC = 1.56 °C/W identical, but larger footprint and lower thermal interface reliability on PCB.	Suitable for prototyping or low-volume industrial controls where through-hole assembly and manual heatsinking are preferred.	Select when mechanical robustness and serviceability outweigh PCB space constraints and automated assembly needs.
FGA25N120ANTD	1200 V rating, higher V_CE(sat) (2.7 V), slower t_f (120 ns), no integrated diode-requires external ultrafast diode.	Used in higher-bus industrial drives (>800 V DC link); lacks monolithic diode integration, increasing layout complexity and parasitic inductance.	Choose only if system requires >600 V blocking; otherwise, STGB7NC60HT4 offers superior diode integration and 37 ns t_rr for high-frequency efficiency.

Compared with STGP7NC60HD, STGB7NC60HT4 provides better PCB thermal management and reflow compatibility; versus FGA25N120ANTD, it delivers lower switching loss, integrated soft diode, and optimized 600 V operation-making it the preferred choice for compact, high-efficiency 380–400 V AC input systems.

Availability

STGB7NC60HT4 is available at Aetrix Electronics and suitable for high-frequency SMPS, active PFC stages, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for STGB7NC60HT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power discrete devices, microcontrollers, and analog ICs for industrial, automotive, and consumer markets.

This IGBT belongs to ST's PowerMESH™ high-speed IGBT family, engineered specifically for high-efficiency, high-frequency power conversion in PFC, UPS, and motor control applications where soft switching and low conduction loss are critical.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies switching performance (t_d(on), t_f, E_off) using R_G = 10 Ω. Increasing R_G beyond 15 Ω significantly degrades t_f and increases E_off; values below 5 Ω risk excessive peak gate current (>5 A) and oscillation. For 100 kHz operation, 8–12 Ω is optimal with a 15 V gate drive.

Can STGB7NC60HT4 replace STGB10NC60HD in an existing design?

No-STGB10NC60HD has higher I_C (16 A), lower V_CE(sat) (2.2 V), and different gate charge (Q_g = 55 nC). Substituting STGB7NC60HT4 may cause thermal overload at 14 A continuous or require gate drive redesign due to 48 nC Q_g and higher V_CE(sat).

Is the integrated diode rated for continuous freewheeling current?

Yes-the diode supports I_F(RMS) = 20 A at T_C = 25 °C (Table 1), and its soft recovery (t_rr = 37 ns, Q_rr = 40 nC) is characterized for repetitive inductive freewheeling. However, diode conduction must remain within SOA limits defined in Figure 15 of DS3640.

Does STGB7NC60HT4 meet RoHS and REACH requirements?

Yes-STGB7NC60HT4 is manufactured in ST's ECOPACK®-compliant D²PAK package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full compliance documentation is available via ST's quality portal using order code STGB7NC60HDT4.

STGB7NC60HT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 25 A

Current - Collector Pulsed (Icm):: 50 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 7A

Power - Max:: 80 W

Switching Energy:: -

Input Type:: Standard

Gate Charge:: 35 nC

Td (on/off) @ 25°C:: 18.5ns/72ns

Test Condition:: 390V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr):: 37 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STGB7NC60HT4 FAQ

1.How can I place an order for STGB7NC60HT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGB7NC60HT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGB7NC60HT4 reliable?

The price and inventory of STGB7NC60HT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB7NC60HT4 is usually 5 days.

3.What payment methods are accepted for STGB7NC60HT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB7NC60HT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGB7NC60HT4?

STGB7NC60HT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGB7NC60HT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGB7NC60HT4?

For technical support, including STGB7NC60HT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB7NC60HT4 requirements.

6.How does Aetrix verify that STGB7NC60HT4 is sourced from the original manufacturer or authorized distributors?

All STGB7NC60HT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB7NC60HT4 meets industry standards.

7.What is the process for return or replacement of STGB7NC60HT4?

All STGB7NC60HT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGB7NC60HT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGB7NC60HT4 part is unused and in its original packaging.

Return procedure for STGB7NC60HT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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