My Inquiry
My Account
STMicroelectronics STGB8NC60KDT4
- Part No.:
- STGB8NC60KDT4
- Manufacturer:
- STMicroelectronics
- Category:
- Single IGBTs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STGB8NC60KDT4.pdf
- Description:
- IGBT 600V 15A 65W D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:990
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STGB8NC60KDT4 from STMicroelectronics is an 8 A, 600 V short-circuit rugged IGBT in D²PAK (TO-263) package, featuring 2.75 V VCE(sat) at 3 A/25 °C and 10 μs short-circuit withstand time at 125 °C. It integrates a very soft ultra-fast recovery antiparallel diode (trr = 23.5 ns, Qrr = 16.5 nC) and is optimized for resonant and soft-switching topologies in high-frequency motor controls and PFC stages.
For engineers reviewing the STGB8NC60KDT4 datasheet, STGB8NC60KDT4 pinout, STGB8NC60KDT4 application, or STGB8NC60KDT4 equivalent, key selection criteria include its low Cres/Cies ratio (8.5 pF / 380 pF), 19 nC total gate charge, and thermal resistance of 1.9 °C/W (junction-to-case), critical for thermal management in compact SMPS and inverter designs.
Technical Context
This IGBT employs ST's PowerMESH process to achieve balanced switching speed and conduction loss-exhibiting 655 A/μs turn-on di/dt and 575 A/μs at 125 °C, with Eon = 55 μJ and Eoff = 85 μJ at 390 V/3 A. Its gate threshold voltage (4.5–6.5 V) ensures robust noise immunity in noisy industrial environments.
The integrated diode delivers soft reverse recovery (Irrm = 1.4 A, trr = 23.5 ns) and low forward voltage (VF = 1.6 V at 3 A/25 °C), minimizing switching losses and cross-conduction risk in half-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - Withstands full bus voltage in 400 V DC-link PFC and motor drive applications |
| IC (TC = 100 °C) | 8 A - Continuous current rating at elevated heatsink temperature, defining thermal design margin |
| VCE(sat) | 2.75 V @ 3 A/25 °C - Low conduction loss enabling >97% efficiency in 10–50 kHz hard-switched inverters |
| tscw | 10 μs @ VCE = 0.5×VCES, TJ = 125 °C - Enables reliable overcurrent protection without desaturation circuitry |
| Cres/Cies | 8.5 pF / 380 pF - Low ratio reduces Miller-induced shoot-through risk in high-dV/dt bridge legs |
| Qg | 19 nC - Enables fast, low-loss switching with standard 1–2 A gate drivers |
| RthJC | 1.9 °C/W - Allows direct mounting to heatsink; 10 W dissipation raises junction only 19 °C above case |
Pinout & Package
D²PAK (TO-263) package with isolated tab (collector), 3-pin surface-mount outline. Tab is electrically connected to collector terminal and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; requires ±20 V absolute max rating and 19 nC charge for full enhancement |
| 2 (C) | Collector | High-side switch node; tied to tab for low-inductance, high-current return path |
| 3 (E) | Emitter | Power ground reference; source of diode cathode and IGBT emitter; low-inductance layout critical |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | 2.75 V @ 3 A enables <1.5 W conduction loss at 8 A, reducing heatsink size by ~30% vs. legacy IGBTs |
| Soft ultra-fast diode | trr = 23.5 ns with 1.4 A peak reverse current minimizes voltage overshoot and EMI in ZVS circuits |
| Short-circuit ruggedness | 10 μs withstand time allows use with simple fixed-time desat detection, eliminating complex sensing |
| Low Cres/Cies | 0.022 ratio suppresses Miller-induced false turn-on during high dV/dt commutation events |
| PowerMESH technology | Optimized cell layout delivers 655 A/μs di/dt while maintaining stable VGE(th) across temperature |
Applications
| Industrial Motor Drives | Server PSU PFC Stages |
|---|---|
|
Use Scenario: 3-phase inverter stage in 0.75 kW HVAC compressors operating at 16–20 kHz. IC Role / Device Role / Timing Role: Main switching device in leg topology; handles bidirectional current via integrated diode during freewheeling. Use Value: Soft diode recovery eliminates snubber requirements, reducing BOM count and board area by 12%. |
Use Scenario: Boost PFC converter in 1U 1.5 kW telecom rectifier with 50 kHz switching frequency. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost; conducts during on-time, blocks during off-time. Use Value: 10 μs short-circuit tolerance permits simplified fault response, cutting protection latency to <2 μs. |
| Resonant LLC Converters | Appliance Inverter Modules |
|
Use Scenario: Primary-side switch in 300–500 kHz LLC resonant transformer driver for LED lighting power supplies. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) device; relies on soft diode recovery to enable clean turn-on at valley points. Use Value: 23.5 ns trr and 16.5 nC Qrr reduce dead-time dependency, improving light-load efficiency by 1.8%. |
Use Scenario: Half-bridge inverter for brushless DC motor control in premium washing machines (1–3 kW). IC Role / Device Role / Timing Role: Low-side switch with integrated diode conducting freewheel current during high-side off-periods. Use Value: 1.6 V diode VF cuts conduction loss by 35% vs. discrete diode solutions, lowering thermal stress on PCB copper. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGD8NC60KDT4 | DPAK (TO-252) package; RthJC = 2.0 °C/W; same electrical specs but lower power dissipation limit (62 W vs. 65 W) | Better suited for space-constrained, lower-power (<600 W) designs where thermal mass is limited | Select when board area is constrained and thermal interface to heatsink is less effective |
| STGP8NC60KD | TO-220 package; RthJC = 1.9 °C/W; identical electrical ratings but through-hole mounting and higher creepage/clearance | Preferred for prototyping, low-volume industrial controls, and designs requiring manual assembly or isolation compliance | Choose for ease of hand-soldering, regulatory compliance testing, or legacy footprint compatibility |
Compared with STGD8NC60KDT4 and STGP8NC60KD, STGB8NC60KDT4 offers the highest power density in surface-mount form, enabling smaller heatsinks and higher power-per-square-centimeter in automated production lines-critical for high-volume server PSU and appliance inverters.
Availability
STGB8NC60KDT4 is available at Aetrix Electronics and suitable for high-frequency motor controls, SMPS PFC stages, and resonant LLC converters requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.
Supply support for STGB8NC60KDT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
This device belongs to ST's PowerMESH IGBT family, engineered specifically for high-efficiency, high-reliability switching in resonant and soft-switching topologies-targeting next-generation energy-efficient power conversion systems.
FAQ
What is the maximum gate-emitter voltage rating for STGB8NC60KDT4?
The absolute maximum gate-emitter voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V for reliable turn-off and enhanced noise immunity in industrial environments. Gate drive circuits must include clamping or active regulation to prevent transient overshoot beyond these limits.
Does STGB8NC60KDT4 require an external freewheeling diode?
No. The device integrates a monolithically fabricated ultra-fast soft-recovery antiparallel diode with trr = 23.5 ns and Qrr = 16.5 nC. This diode is fully rated for the IGBT's current and voltage conditions and eliminates the need for discrete diodes in half-bridge or inverter leg configurations.
How does the short-circuit withstand time impact system protection design?
With 10 μs short-circuit capability at 125 °C, the device allows implementation of fixed-time desaturation detection without complex current-sensing feedback loops. Protection circuits can trigger within 5–7 μs, ensuring safe shutdown before thermal runaway occurs-reducing design complexity and bill-of-materials cost.
Is STGB8NC60KDT4 RoHS-compliant and halogen-free?
Yes. STGB8NC60KDT4 is manufactured in ST's ECOPACK2-compliant D²PAK package, meeting RoHS Directive 2011/65/EU and IEC 61249-2-21:2011 for halogen-free materials. Full environmental compliance documentation is available via ST's official product page and material declarations.
STGB8NC60KDT4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- PowerMESH™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 15 A
- Current - Collector Pulsed (Icm):
- 30 A
- Vce(on) (Max) @ Vge, Ic:
- 2.75V @ 15V, 3A
- Power - Max:
- 65 W
- Switching Energy:
- 55µJ (on), 85µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 19 nC
- Td (on/off) @ 25°C:
- 17ns/72ns
- Test Condition:
- 390V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr):
- 23.5 ns
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STGB8NC60KDT4 FAQ
1.How can I place an order for STGB8NC60KDT4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STGB8NC60KDT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STGB8NC60KDT4 reliable?
The price and inventory of STGB8NC60KDT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGB8NC60KDT4 is usually 5 days.
3.What payment methods are accepted for STGB8NC60KDT4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGB8NC60KDT4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STGB8NC60KDT4?
STGB8NC60KDT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STGB8NC60KDT4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STGB8NC60KDT4?
For technical support, including STGB8NC60KDT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGB8NC60KDT4 requirements.
6.How does Aetrix verify that STGB8NC60KDT4 is sourced from the original manufacturer or authorized distributors?
All STGB8NC60KDT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGB8NC60KDT4 meets industry standards.
7.What is the process for return or replacement of STGB8NC60KDT4?
All STGB8NC60KDT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGB8NC60KDT4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STGB8NC60KDT4 part is unused and in its original packaging.
Return procedure for STGB8NC60KDT4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STGB8NC60KDT4 Tags
;;2.jpg)
-
STGD3NB60SDT4
STMicroelectronics
-
HGTD1N120BNS9A
onsemi
-
STGF7NB60SL
STMicroelectronics
-
FGD5T120SH
onsemi
-
STGB3NC120HDT4
STMicroelectronics
-
IKP20N60TXKSA1
Infineon Technologies
-
STGW30H60DFB
STMicroelectronics
-
STGB30M65DF2
STMicroelectronics
-
IKB20N60TATMA1
Infineon Technologies
-
STGB30V60DF
STMicroelectronics
-
IKW30N60DTPXKSA1
Infineon Technologies
-
ISL9V3040P3
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
