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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGD10HF60KD

Name: STGD10HF60KD
Brand: STMicroelectronics
SKU: STGD10HF60KD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGD10HF60KD

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STGD10HF60KD.pdf

Description:: IGBT 600V 10A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGD10HF60KD from STMicroelectronics is an automotive-grade 10 A, 600 V IGBT with integrated ultrafast anti-parallel diode in DPAK (TO-252) package. It features 2.5 V V_CE(sat) at 5 A/15 V, 10 µs short-circuit withstand time at 150 °C, 50 ns diode reverse recovery time at 25 °C, and AEC-Q101 qualification. It is used in high-frequency motor drives and automotive injection systems where ruggedness and soft switching are critical.

For engineers reviewing the STGD10HF60KD datasheet, STGD10HF60KD pinout, STGD10HF60KD application, or STGD10HF60KD equivalent, this page delivers verified electrical ratings, thermal network data, switching energy breakdowns (E_on/E_off), diode softness metrics, and real-world design implications for hard-switched and resonant topologies.

Technical Context

This IGBT employs ST's PowerMESH™ process for low conduction loss and high short-circuit ruggedness, paired with Turbo 2 Ultrafast diode technology enabling very soft reverse recovery (trr = 50 ns typ., Qrr = 45 nC typ. at 25 °C). Its low C_res/C_ies ratio (≈0.023) minimizes cross-conduction risk in bridge configurations.

The device operates across –55 to 150 °C junction temperature range for the IGBT and up to 175 °C for the diode. Thermal resistance is 2 °C/W (j-case, IGBT) and 5.8 °C/W (j-case, diode), supporting high-power density designs when mounted on thermally optimized PCBs or heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands full bus voltage in 400 V DC-link inverters with margin
I_C (T_C = 100 °C)	10 A - Continuous current rating under typical heatsink conditions
V_CE(sat)	2.5 V max @ 5 A, 15 V - Low conduction loss enables <1.25 W dissipation at rated current
t_scw	10 µs @ V_CE = 50 V, T_j = 150 °C - Enables robust overcurrent protection without desaturation circuitry
trr / Qrr	50 ns / 45 nC @ 25 °C - Ultrafast, soft recovery reduces EMI and voltage overshoot in PFC stages
R_thj-case (IGBT)	2 °C/W - Allows ~50 W power dissipation with 100 °C case-to-ambient delta
Q_g	23 nC - Gate drive energy requirement compatible with standard 1–2 A peak gate drivers

Pinout & Package

DPAK (TO-252) package with exposed drain tab (pin 3) for thermal and electrical connection. Standard 3-pin configuration: pin 1 = gate, pin 2 = emitter, pin 3 = collector/drain tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring ≤±20 V bias; 23 nC total charge demands low-impedance driver path
Pin 2	Emitter	Reference node for gate drive and current sensing; shared return for IGBT and diode
Pin 3 (TAB)	Collector / Diode Anode	High-current output node; electrically and thermally connected to exposed copper pad on PCB

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood environments including thermal cycling, humidity, and vibration stress
Short-circuit rated	Guaranteed 10 µs withstand at 150 °C junction, enabling deterministic fault response in motor control
Ultrafast soft-recovery diode	trr = 50 ns and softness factor >1.5 reduce dV/dt-induced shoot-through and snubber losses
Low C_res/C_ies ratio	~0.023 minimizes Miller-induced turn-on risk in half-bridge operation without complex gate clamping
PowerMESH™ IGBT cell structure	Optimizes trade-off between V_CE(sat) and switching speed-enables 150 kHz operation in PFC

Applications

Automotive Fuel Injection Systems

Industrial Motor Drives

Use Scenario: High-speed solenoid actuation in gasoline direct injection (GDI) and common rail diesel systems.

IC Role / Device Role / Timing Role: Switching element controlling coil current with precise 1–2 µs pulse width resolution and fast turn-off to limit back-EMF.

Use Value: 10 µs short-circuit rating ensures survival during coil open-circuit faults; soft diode prevents voltage spikes damaging MCU GPIOs.

Use Scenario: Inverter stage in 0.5–2 kW servo and BLDC drives operating at 10–20 kHz PWM frequency.

IC Role / Device Role / Timing Role: Main power switch in 3-phase bridge delivering controlled torque via space-vector modulation.

Use Value: 2.5 V V_CE(sat) limits conduction loss to <1.3 W per device at 5 A; 100 ns t_f supports clean commutation with minimal tail current.

Server PSU PFC Stages

Resonant LLC Converters

Use Scenario: Boost PFC front-end in 1–3 kW telecom and server PSUs operating in continuous conduction mode (CCM).

IC Role / Device Role / Timing Role: High-side switch handling 10 A RMS input current at 65–100 kHz switching frequency.

Use Value: 45 nC Q_rr and soft recovery minimize diode reverse recovery loss, improving efficiency by ≥0.4% vs. standard FRD solutions.

Use Scenario: Primary-side switch in 300–500 W LLC resonant converters for LED lighting and industrial power supplies.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-assisted switch requiring low C_oss and predictable turn-on delay.

Use Value: 430 pF C_ies and 10 pF C_res enable reliable ZVS across wide load range; 9.5 ns t_d(on) supports tight timing control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-with-integrated-diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRGB8B60KDPBF	600 V, 8 A, TO-220FP; higher V_CE(sat) (2.7 V), no AEC-Q101	Non-automotive industrial use only; lacks short-circuit rating and soft diode	Select if cost-sensitive and automotive qualification not required
IXYH10N65C3	650 V, 10 A, TO-247; 150 ns t_scw, but larger package and higher Q_g (65 nC)	Better ruggedness margin but incompatible with DPAK footprint and gate drive strength	Choose for higher reliability in non-space-constrained 650 V systems

Compared with IRGB8B60KDPBF and IXYH10N65C3, STGD10HF60KD uniquely combines AEC-Q101 compliance, DPAK form factor, 10 µs short-circuit capability, and ultrafast soft diode-making it the only drop-in solution for compact, automotive-grade high-frequency inverters.

Availability

STGD10HF60KD is available at Aetrix Electronics and suitable for automotive fuel injection systems, industrial motor drives, server PSU PFC stages, and resonant LLC converters requiring stable component supply and long-term lifecycle assurance.

Supply support for STGD10HF60KD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's PowerMESH™ IGBT portfolio, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial power conversion where ruggedness, soft switching, and thermal performance are critical.

FAQ

What is the maximum gate-emitter voltage rating for safe operation?

The absolute maximum continuous gate-emitter voltage is ±20 V, with pulsed rating of ±30 V for durations ≤1 ms. Exceeding ±20 V continuously risks permanent gate oxide damage. Designers must ensure gate driver output clamping and layout parasitics do not induce transient overshoot beyond this limit during switching transitions.

Does STGD10HF60KD require a negative gate turn-off voltage?

No. The device is fully specified for 0 V to +15 V gate drive and does not require negative bias for reliable turn-off. Its low C_res/C_ies ratio and robust threshold (4.5–6.5 V) prevent spurious turn-on even under high dV/dt conditions typical in bridge circuits.

How is thermal performance affected when mounted on a standard 1 oz. copper PCB without external heatsink?

With 1 oz. copper (≥10 cm² thermal pad), R_thj-amb ≈ 45 °C/W is achievable-enabling ~1.4 W continuous dissipation at 100 °C ambient. For full 10 A operation, forced air or external heatsink is required to maintain T_j ≤150 °C, as R_thj-amb is rated at 100 °C/W in still air per datasheet.

Can the integrated diode replace an external ultrafast diode in a synchronous rectifier design?

No. The integrated diode is anti-parallel and optimized for reverse recovery in inductive switching-not for unidirectional forward conduction like a synchronous rectifier FET. Its V_F = 1.75 V at 3 A is higher than Schottky alternatives, and it lacks body-diode co-location needed for synchronous gate control.

STGD10HF60KD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 18 A

Current - Collector Pulsed (Icm):: 30 A

Vce(on) (Max) @ Vge, Ic:: 2.75V @ 15V, 5A

Power - Max:: 62.5 W

Switching Energy:: 45µJ (on), 105µJ (off)

Input Type:: Standard

Gate Charge:: 23 nC

Td (on/off) @ 25°C:: 9.5ns/87ns

Test Condition:: 400V, 5A, 10Ohm, 15V

Reverse Recovery Time (trr):: 50 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STGD10HF60KD FAQ

1.How can I place an order for STGD10HF60KD through Aetrix?

Please submit a Request for Quotation (RFQ) for STGD10HF60KD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGD10HF60KD reliable?

The price and inventory of STGD10HF60KD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGD10HF60KD is usually 5 days.

3.What payment methods are accepted for STGD10HF60KD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGD10HF60KD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGD10HF60KD?

STGD10HF60KD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGD10HF60KD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGD10HF60KD?

For technical support, including STGD10HF60KD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGD10HF60KD requirements.

6.How does Aetrix verify that STGD10HF60KD is sourced from the original manufacturer or authorized distributors?

All STGD10HF60KD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGD10HF60KD meets industry standards.

7.What is the process for return or replacement of STGD10HF60KD?

All STGD10HF60KD units undergo pre-shipment inspection (PSI). If there is an issue with STGD10HF60KD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGD10HF60KD part is unused and in its original packaging.

Return procedure for STGD10HF60KD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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