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STMicroelectronics STGD10NC60KT4

Part No.:
STGD10NC60KT4
Manufacturer:
STMicroelectronics
Category:
Single IGBTs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSTGD10NC60KT4.pdf
Description:
IGBT 600V 20A 60W DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,282

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Product details

Overview

STGD10NC60KT4 from STMicroelectronics is a 10 A, 600 V short-circuit rugged IGBT in DPAK (TO-252) package with integrated ultra-fast soft-recovery antiparallel diode. It features 2.5 V typical VCE(sat) at 5 A/15 V, 10 μs short-circuit withstand time at 125 °C, and 8.5 pF typical Cres, enabling high-frequency resonant and hard-switching PFC and motor control stages.

For engineers reviewing the STGD10NC60KT4 datasheet, STGD10NC60KT4 pinout, STGD10NC60KT4 application, or STGD10NC60KT4 equivalent, this device is selected for its low Cres/Cies ratio to prevent cross-conduction, soft diode recovery for EMI reduction, and validated 125 °C junction operation in compact surface-mount power stages.

Technical Context

This IGBT employs ST's PowerMESH process to optimize switching speed and conduction loss trade-off. Its gate threshold voltage (4.5–6.5 V) and 15 S forward transconductance support stable drive under varying temperature and load conditions.

The integrated diode delivers 22 ns typical reverse recovery time and 14 nC Qrr at 25 °C-critical for minimizing turn-on losses in bridge-leg configurations-and maintains soft recovery behavior up to 125 °C (35 ns trr, 40 nC Qrr).

Key Specifications

Parameter Value and Actual Design Meaning
VCES 600 V - Withstands full DC bus voltage in 400 V AC-input PFC and 3-phase inverter designs.
IC (TC = 100 °C) 6 A - Continuous current capability at elevated case temperature, supporting thermally constrained PCB layouts.
VCE(sat) (5 A, 15 V, 25 °C) 2.5 V typical - Low on-state loss enables >97% efficiency in 1–5 kW SMPS output stages.
tscw 10 μs - Enables robust short-circuit protection without external desaturation circuitry in motor drives.
Cres 8.5 pF - Low reverse transfer capacitance reduces Miller-induced false turn-on risk in high-dV/dt environments.
Qgc 9 nC - Gate-collector charge directly impacts turn-off energy (Eoff = 85 μJ typical), critical for thermal management.
trr (di/dt = 100 A/μs) 22 ns - Ultra-fast, soft diode recovery minimizes voltage overshoot and snubber losses in synchronous rectification.

Pinout & Package

DPAK (TO-252) package: surface-mount, single-row 3-lead outline with exposed drain tab (pin 2) for thermal and electrical connection. Tab is electrically connected to collector.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control input requiring ±20 V max rating; 10 Ω gate resistor recommended for 10 μs short-circuit robustness.
2 (C / TAB) Collector / Drain Tab Main high-side current path and primary thermal interface; must be soldered to large copper pour for RthJC = 2 °C/W.
3 (E) Emitter Return path for load current and gate drive reference; low-inductance layout essential for clean switching waveforms.

Key Features

Feature Design Value
Lower VCE(sat) 2.5 V @ 5 A - Reduces conduction loss by ~18% vs. legacy 600 V IGBTs, lowering heatsink requirements in 3–5 kW PFC modules.
Low Cres/Cies ratio 8.5 pF / 380 pF = 0.022 - Suppresses Miller-induced shoot-through in half-bridge topologies operating above 100 kHz.
Ultra-soft diode recovery 22 ns trr, <1.3 A Irrm - Limits di/dt-induced voltage spikes and EMI generation during commutation in motor inverter legs.
10 μs short-circuit withstand Validated at VCE = 0.5 × VCES, TJ = 125 °C, RG = 10 Ω - Enables deterministic overcurrent response without desat detection in cost-sensitive drives.

Applications

Industrial PFC Module BLDC Inverter Stage

Use Scenario: 3.3 kW continuous boost PFC stage in industrial UPS with 400 V DC bus and 50 kHz switching.

IC Role / Device Role / Timing Role: Main switching device in interleaved boost leg; handles 6 A RMS collector current with 10 μs fault tolerance.

Use Value: 2.5 V VCE(sat) and 85 μJ Eoff enable >98.2% peak efficiency while maintaining <85 °C case temperature on 2-oz copper.

Use Scenario: Upper-leg switch in 1.5 kW field-oriented controlled BLDC inverter for HVAC compressors.

IC Role / Device Role / Timing Role: High-side IGBT in 3-phase bridge; commutates 5 A peak motor current with soft diode freewheeling.

Use Value: 22 ns trr and 14 nC Qrr reduce voltage overshoot to <420 V, eliminating need for RC snubbers and saving board space.

Resonant LLC Primary Switch High-Frequency Welding Inverter

Use Scenario: Primary-side switch in 200 kHz LLC resonant converter for LED driver with zero-voltage switching.

IC Role / Device Role / Timing Role: Hard-commutated switch during dead-time transitions; relies on low Cres to minimize capacitive turn-on loss.

Use Value: 8.5 pF Cres limits turn-on charge injection, reducing Eon to 55 μJ and enabling stable ZVS down to 150 kHz.

Use Scenario: Inverter switch in 100 kHz IGBT-based spot welder delivering 8 kA pulsed secondary current.

IC Role / Device Role / Timing Role: Fast-switching main device handling repetitive 30 A pulsed collector current with 10 μs short-circuit immunity.

Use Value: 10 μs tscw allows safe interruption of welding pulses without desaturation monitoring, simplifying control firmware.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
STGP10NC60KD TO-220 package, 10 A continuous rating at TC = 25 °C, RthJC = 1.9 °C/W Requires through-hole mounting and larger heatsink; better for prototyping or lower-volume industrial drives Select when mechanical robustness and manual assembly outweigh surface-mount density requirements.
IRGB4062DPBF 600 V, 12 A, 2.2 V VCE(sat), but no integrated diode; requires external ultrafast diode Higher system-level BOM count and layout complexity; used where diode optimization is independent of switch selection Choose only if discrete diode selection (e.g., for tailored Qrr or trr) is mandatory and thermal budget permits added component footprint.

Compared with STGP10NC60KD, STGD10NC60KT4 offers 30% smaller PCB footprint and 40% lower RthJA, while IRGB4062DPBF trades integrated diode convenience for marginally lower VCE(sat) but increases design validation effort and total solution size.

Availability

STGD10NC60KT4 is available at Aetrix Electronics and suitable for high-frequency motor controls, SMPS and PFC in both hard switch and resonant topologies, and industrial motor drives requiring stable component supply across production lifecycles.

Supply support for STGD10NC60KT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing power, analog, MEMS, and microcontroller solutions for industrial, automotive, and consumer markets.

STGD10NC60KT4 belongs to ST's PowerMESH™ IGBT family, engineered specifically for high-efficiency, high-frequency switching in compact surface-mount power converters and motor inverters.

FAQ

What is the maximum gate-emitter voltage rating for STGD10NC60KT4?

The absolute maximum VGE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative bias below –10 V may cause latch-up in high-di/dt conditions. Gate drive circuits must limit transient overshoot using clamping diodes or active regulation.

Does STGD10NC60KT4 include an integrated diode, and what are its key parameters?

Yes, it integrates a monolithic ultra-fast soft-recovery antiparallel diode. Key specs include 2 V typical forward voltage at 5 A/25 °C, 22 ns reverse recovery time, 14 nC reverse recovery charge, and 1.3 A peak reverse recovery current-all measured at 100 A/μs di/dt and 40 V reverse voltage.

Can STGD10NC60KT4 be used in parallel configurations?

Parallel operation is not recommended due to positive temperature coefficient of VCE(sat) being insufficient to ensure current sharing across devices. Mismatched dynamic parameters (Qgc, trr) and layout asymmetry increase imbalance risk. For higher current, use a single higher-rated device like STGP20NC60WD.

What thermal resistance values apply to the DPAK package of STGD10NC60KT4?

RthJC is 2.0 °C/W (junction-to-case) and RthJA is 100 °C/W (junction-to-ambient) for standard JEDEC 2-layer board. Achieving the 2.0 °C/W value requires full-solder coverage of the exposed drain tab to ≥10 cm² of 2-oz internal copper plane with thermal vias spaced ≤2 mm center-to-center.

STGD10NC60KT4 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
PowerMESH™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
20 A
Current - Collector Pulsed (Icm):
30 A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 5A
Power - Max:
60 W
Switching Energy:
55µJ (on), 85µJ (off)
Input Type:
Standard
Gate Charge:
19 nC
Td (on/off) @ 25°C:
17ns/72ns
Test Condition:
390V, 5A, 10Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

STGD10NC60KT4 FAQ

1.How can I place an order for STGD10NC60KT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGD10NC60KT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGD10NC60KT4 reliable?

The price and inventory of STGD10NC60KT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGD10NC60KT4 is usually 5 days.

3.What payment methods are accepted for STGD10NC60KT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGD10NC60KT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGD10NC60KT4?

STGD10NC60KT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGD10NC60KT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGD10NC60KT4?

For technical support, including STGD10NC60KT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGD10NC60KT4 requirements.

6.How does Aetrix verify that STGD10NC60KT4 is sourced from the original manufacturer or authorized distributors?

All STGD10NC60KT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGD10NC60KT4 meets industry standards.

7.What is the process for return or replacement of STGD10NC60KT4?

All STGD10NC60KT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGD10NC60KT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGD10NC60KT4 part is unused and in its original packaging.

Return procedure for STGD10NC60KT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STGD10NC60KT4 Tags

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