STMicroelectronics STGD18N40LZT4
- Part No.:
- STGD18N40LZT4
- Manufacturer:
- STMicroelectronics
- Category:
- Single IGBTs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STGD18N40LZT4.pdf
- Description:
- IGBT 420V 25A 125W DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:3,693
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Product details
Overview
STGD18N40LZT4 from STMicroelectronics is an AEC-Q101-qualified automotive-grade IGBT optimized for pencil coil electronic ignition drivers. It features 390 V internal collector-emitter clamping, 180 mJ single-pulse SCIS energy at TC = 150 °C, logic-level gate drive (VGE(th) = 1.2–2.3 V), 1.7 V VCE(sat) @ 10 A, and integrated 1.6 kΩ gate resistor and 16 kΩ gate-emitter resistor. It operates reliably in engine bay environments up to 175 °C junction temperature.
For engineers reviewing the STGD18N40LZT4 datasheet, STGD18N40LZT4 pinout, STGD18N40LZT4 application, or STGD18N40LZT4 equivalent, key selection criteria include clamped voltage rating, SCIS robustness under high-temperature inductive switching, gate threshold stability across -40 to 175 °C, and integrated ESD protection eliminating external gate circuitry.
Technical Context
This IGBT employs ST's PowerMESH trench-gate structure with built-in gate-collector voltage clamping and ESD-protected logic-level input. Its static characteristics are specified across -40 to 175 °C, with VCE(sat) remaining stable at 1.30 V @ 10 A and 150 °C, and VGE(th) dropping only to 0.7 V at maximum junction temperature - enabling reliable turn-on under hot cranking conditions.
The device is characterized for inductive switching with L = 1–3 mH, delivering 13.5 μs td(off) and 5.5 μs tf at 300 V/10 A, and sustaining dV/dt up to 105 V/μs. Thermal resistance RthJC is 1 °C/W, supporting high-power pulse operation with minimal case-to-junction temperature rise.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES(clamped) | 390 V - Internally clamped breakdown prevents destructive overvoltage during coil flyback. |
| VCE(sat) | 1.7 V @ 10 A, 25 °C - Low conduction loss reduces thermal stress in high-duty-cycle ignition pulses. |
| ESCIS | 180 mJ @ TC = 150 °C, L = 3 mH - Validated short-circuit ruggedness for sustained misfire events. |
| VGE(th) | 1.2–2.3 V - Logic-level threshold enables direct drive from 3.3 V/5 V microcontrollers without level-shifting. |
| RGE | 16 kΩ - Integrated gate-emitter resistor suppresses parasitic turn-on and improves noise immunity. |
| RG | 1.6 kΩ - On-die gate resistor simplifies PCB layout and ensures consistent switching behavior. |
| RthJC | 1 °C/W - Enables high pulsed power handling with minimal junction temperature rise above case. |
Pinout & Package
STGD18N40LZT4 is housed in a D²PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection. The package meets AEC-Q101 requirements and supports tape-and-reel automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Pin 1) | Collector / Drain | Electrically and thermally connected to internal die collector; must be soldered to large copper pour for heat dissipation and low-inductance return path. |
| Pin 2 | Emitter | Low-side current return node; referenced to ground in typical pencil coil driver configuration. |
| Pin 3 | Gate | Logic-level control input; internally series-resisted (1.6 kΩ) and shunted to emitter (16 kΩ) for ESD and noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive under-hood use including temperature cycling, humidity, and mechanical shock per JESD47. |
| Integrated gate and gate-emitter resistors | Eliminates need for external gate network components, reducing BOM count and layout sensitivity to parasitic oscillation. |
| 390 V collector-emitter clamping | Prevents secondary breakdown during inductive kickback without external snubber diodes or Zeners. |
| ESD protection (HBM 8 kV) | Withstands electrostatic discharge during handling and assembly without gate oxide damage. |
| SCIS energy of 180 mJ at 150 °C | Ensures safe operation during extended open-circuit or misfire conditions without thermal runaway. |
Applications
| Engine Control Unit (ECU) Ignition Driver | Pencil Coil Primary Switching |
|---|---|
Use Scenario: Direct-driving primary winding of pencil-type ignition coils in gasoline engines with variable dwell time and cylinder cut-off. IC Role / Device Role / Timing Role: High-voltage, high-current switch controlling coil energization and controlled flyback timing for spark generation. Use Value: 390 V clamping withstands >350 V flyback transients; 180 mJ SCIS rating sustains 10 ms+ misfire events at full temperature without failure. | Use Scenario: Replacing discrete MOSFET + gate driver + protection components in compact coil-on-plug modules. IC Role / Device Role / Timing Role: Single-package solution integrating switching, gate termination, and ESD protection for space-constrained designs. Use Value: Integrated 1.6 kΩ RG and 16 kΩ RGE reduce component count by ≥4 parts while improving EMI margin and production yield. |
| Dual-Channel Ignition Module | Start-Stop System Ignition |
Use Scenario: Dual-channel board-level ignition module driving two independent pencil coils with shared MCU interface. IC Role / Device Role / Timing Role: Synchronized high-side switching element with matched dynamic parameters across channels for balanced spark energy. Use Value: Tight parameter distribution (e.g., VCE(sat) typ. 1.35 V, max. 1.7 V) ensures <±3% spark energy variation between cylinders. | Use Scenario: Ignition switching in vehicles with frequent engine restarts where hot-soak and cold-cranking reliability are critical. IC Role / Device Role / Timing Role: Robust gate-threshold performance down to 0.7 V at 175 °C ensures guaranteed turn-on during hot restart after extended idle. Use Value: VGE(th) remains functional across -40 to 175 °C, eliminating need for adaptive gate drive voltage scaling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT ignition driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGB18N40LZT4 | Same die, identical specs, D²PAK package with marked "GB" prefix; functionally identical to STGD18N40LZT4. | No difference - used interchangeably in automotive production; same AEC-Q101 test report and qualification data. | Select when sourcing from distributors listing GB-marked reels; no design change required. |
| IRGB14C40LPBF | 400 V VCES, higher VCE(sat) (2.2 V @ 10 A), no integrated RGE, requires external gate protection. | Lacks integrated gate-emitter resistor and ESD rating; needs external TVS and RC network for automotive robustness. | Consider only if legacy IR design reuse is required; adds BOM cost and layout complexity versus STGD18N40LZT4. |
Compared with STGB18N40LZT4, this part offers identical performance and qualification but differs only in marking and reel packaging; compared with IRGB14C40LPBF, it delivers lower conduction loss, integrated protection, and verified AEC-Q101 compliance - reducing system-level validation effort and improving field reliability.
Availability
STGD18N40LZT4 is available at Aetrix Electronics and suitable for automotive engine control units, pencil coil driver modules, dual-channel ignition systems, and start-stop compatible ignition circuits requiring stable component supply across extended temperature and high-reliability automotive lifecycles.
Supply support for STGD18N40LZT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete technologies with vertical manufacturing and rigorous automotive qualification processes.
This IGBT belongs to ST's PowerMESH automotive-grade IGBT family, engineered specifically for high-ruggedness, high-temperature ignition switching - prioritizing SCIS energy, clamped voltage integrity, and gate robustness over general-purpose switching metrics.
FAQ
Is STGD18N40LZT4 pin-compatible with STGB18N40LZT4?
Yes - both share identical D²PAK (TO-263) pinout: Tab = Collector, Pin 2 = Emitter, Pin 3 = Gate. They originate from the same die and qualification lot; the "D" and "B" prefixes reflect reel marking variants, not functional or mechanical differences. No PCB or schematic changes are needed for substitution.
What is the maximum recommended gate drive voltage for reliable operation?
The absolute maximum VGE is ±20 V, but ST specifies optimal operation at VGE = 4.5 V for 10 A conduction. Driving above 5 V increases switching speed but raises EMI risk and does not improve VCE(sat); below 3.8 V risks incomplete turn-on at high temperature. A 4.5 V ±0.3 V logic-level source is ideal.
Does STGD18N40LZT4 require an external freewheeling diode across the ignition coil?
No - its 390 V VCES(clamped) rating is designed to safely clamp the coil's flyback voltage without external diodes. The internal clamping mechanism activates at ~360 V and limits peak voltage to ≤420 V, protecting the die during energy recirculation. External diodes are unnecessary unless system-level transient overshoot exceeds 420 V.
How is thermal performance validated for continuous pulse operation in engine compartments?
Thermal validation uses RthJC = 1 °C/W with case temperature monitored at the tab center. At 30 A continuous (derated from 40 A pulsed), power dissipation reaches ~51 W; with 1 °C/W and 125 °C max case, junction reaches 176 °C - within rated 175 °C limit. Forced airflow or copper area ≥10 cm² is recommended for sustained >10 A RMS operation.
STGD18N40LZT4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- PowerMESH™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 420 V
- Current - Collector (Ic) (Max):
- 25 A
- Current - Collector Pulsed (Icm):
- 40 A
- Vce(on) (Max) @ Vge, Ic:
- 1.7V @ 4.5V, 10A
- Power - Max:
- 125 W
- Switching Energy:
- -
- Input Type:
- Logic
- Gate Charge:
- 29 nC
- Td (on/off) @ 25°C:
- 650ns/13.5µs
- Test Condition:
- 300V, 10A, 5V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STGD18N40LZT4 FAQ
1.How can I place an order for STGD18N40LZT4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STGD18N40LZT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STGD18N40LZT4 reliable?
The price and inventory of STGD18N40LZT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGD18N40LZT4 is usually 5 days.
3.What payment methods are accepted for STGD18N40LZT4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGD18N40LZT4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STGD18N40LZT4?
STGD18N40LZT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STGD18N40LZT4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STGD18N40LZT4?
For technical support, including STGD18N40LZT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGD18N40LZT4 requirements.
6.How does Aetrix verify that STGD18N40LZT4 is sourced from the original manufacturer or authorized distributors?
All STGD18N40LZT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGD18N40LZT4 meets industry standards.
7.What is the process for return or replacement of STGD18N40LZT4?
All STGD18N40LZT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGD18N40LZT4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STGD18N40LZT4 part is unused and in its original packaging.
Return procedure for STGD18N40LZT4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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