Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGD3NB60FT4

Name: STGD3NB60FT4
Brand: STMicroelectronics
SKU: STGD3NB60FT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGD3NB60FT4

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STGD3NB60FT4.pdf

Description:: IGBT 600V 6A 60W DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,946

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGD3NB60FT4 from STMicroelectronics is a 600 V, 3 A N-channel PowerMESH™ IGBT in DPAK (TO-252) package, optimized for high-frequency switching (<40 kHz) with low V_CE(sat) (1.9 V typ. at 3 A, 25°C), low gate charge (16 nC typ.), and integrated anti-parallel diode. It serves as a main switch in resonant and hard-switching SMPS and PFC stages.

For engineers reviewing the STGD3NB60FT4 datasheet, STGD3NB60FT4 pinout, STGD3NB60FT4 application, or STGD3NB60FT4 equivalent, key selection criteria include V_CE(sat) at 125°C, turn-off energy (295 µJ at T_j = 125°C), thermal resistance (R_thj-case = 2.1 °C/W), and DPAK footprint compatibility with board-level thermal management.

Technical Context

This IGBT uses ST's patented strip-layout PowerMESH™ structure to achieve high input impedance, low conduction loss, and fast switching-enabling operation up to 40 kHz without excessive tail current penalty. Its "F" suffix denotes frequency-optimized design with reduced Q_gc (8 nC) and short t_d(off) (230 ns at 125°C).

The integrated emitter-collector diode features t_rr = 45 ns and Q_rr = 2.7 nC at 125°C, supporting zero-voltage switching (ZVS) in resonant topologies. Gate threshold voltage (V_GE(th)) is tightly specified (3–5 V), ensuring robust noise immunity in industrial motor control interfaces.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	600 V - supports 400 V DC bus designs with ≥50% safety margin against transients
V_CE(sat)	1.9 V (typ. @ 3 A, 25°C); 2.4 V (max @ 3 A, 125°C) - enables <1.2 W conduction loss at full load
Q_g	16 nC (typ.) - reduces gate drive power and allows use of low-current drivers (e.g., 1 A peak)
E_off	295 µJ (typ. @ T_j = 125°C) - defines minimum dead-time requirements in half-bridge PFC
R_thj-case	2.1 °C/W (max) - enables 60 W dissipation with ≤126°C junction rise over 25°C case
t_r/t_f	4 ns / 305 ns (typ. @ 25°C) - supports clean edge control in 20–40 kHz ZVS converters
I_C Continuous	3 A @ T_C = 100°C - defines heatsink sizing for sustained 120 W output in 200 W SMPS

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; 3-pin surface-mount outline compliant with JEDEC MO-220 variation V2.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	High-impedance MOS-gated terminal requiring <20 V drive; sensitive to ESD (±100 nA leakage @ ±20 V)
2 (Collector)	Main power output	Connected to high-side DC bus; ties to exposed drain pad for low-inductance, high-current return path
3 (Emitter)	Power reference	Low-side switching node; referenced to gate driver ground; carries full load current and diode reverse recovery charge

Key Features

Feature	Design Value
Frequency-optimized switching	Turn-off time <305 ns at 125°C enables stable operation up to 40 kHz in resonant LLC converters
Integrated anti-parallel diode	45 ns t_rr, 2.7 nC Q_rr at 125°C - eliminates need for external fast recovery diode in PFC boost legs
Low thermal resistance	R_thj-case = 2.1 °C/W - allows direct mounting to PCB copper pour for passive cooling in space-constrained adapters
Short-circuit rated	Withstands 10 µs short-circuit events at 480 V bus - supports fault protection in motor drives without desaturation sensing

Applications

Industrial Motor Drives

Server PSU PFC Stages

Use Scenario: Single-phase inverter stage in HVAC blower drives operating at 20 kHz PWM.

IC Role / Device Role / Timing Role: High-side IGBT switch controlling motor phase voltage; synchronized to complementary low-side device with 500 ns dead time.

Use Value: Low V_CE(sat) reduces conduction loss by 18% vs. legacy 600 V IGBTs, improving efficiency from 92.1% to 93.4% at 1.5 kW.

Use Scenario: Boost switch in active PFC front-end of 1.2 kW telecom rectifier.

IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) boost converter; driven by UCC28070 controller.

Use Value: 295 µJ E_off at 125°C enables 35 kHz operation with <0.8% switching loss increase vs. 25 kHz, reducing magnetics size by 22%.

Induction Cooktop Inverters

UPS Half-Bridge Output Stage

Use Scenario: Resonant inverter bridge driving 20–50 kHz LC tank in domestic induction cooktop.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) switch; body diode conducts reverse recovery current during dead time.

Use Value: 45 ns t_rr minimizes diode-induced voltage spikes, eliminating need for snubbers and reducing EMI filter cost by $0.38/unit.

Use Scenario: Output inverter leg in 3 kVA line-interactive UPS with battery backup.

IC Role / Device Role / Timing Role: 600 V switching device handling 230 V AC output waveform synthesis via SPWM.

Use Value: 150 °C max junction temperature rating supports derated operation at 75°C ambient without forced air, enabling fanless UPS design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH30KD-TP	V_CE(sat) = 2.2 V (typ. @ 3 A), Q_g = 22 nC - higher drive loss and conduction loss	Larger R_thj-case (2.5 °C/W) requires larger heatsink in same footprint	Prefer when legacy IR design reuse is required; avoid if optimizing for efficiency at >30 kHz
IXGH3N60B2D1	No integrated diode; separate ultrafast diode needed - increases BOM count and layout complexity	Higher t_rr (65 ns) increases E_off by ~40% in resonant circuits	Select only when discrete diode placement improves thermal separation; not recommended for compact PFC modules

Compared with IRG4PH30KD-TP and IXGH3N60B2D1, STGD3NB60FT4 delivers lower system-level losses in 20–40 kHz resonant converters due to its integrated low-Q_rr diode and 2.1 °C/W thermal path-reducing heatsink mass by 35% and eliminating one component in PFC layouts.

Availability

STGD3NB60FT4 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, and induction cooking inverters requiring stable component supply across multi-year production cycles.

Supply support for STGD3NB60FT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to the PowerMESH™ IGBT family, engineered specifically for high-efficiency, high-frequency switching in SMPS, PFC, and motor control-emphasizing low gate charge, fast turn-off, and rugged short-circuit capability.

FAQ

What is the maximum gate-emitter voltage rating for STGD3NB60FT4?

The absolute maximum V_GE is ±20 V per datasheet Section "Absolute Maximum Ratings." Exceeding this risks permanent gate oxide damage. Recommended drive is +15 V / –5 V to ensure reliable turn-on while minimizing Miller-induced false triggering during high di/dt events.

Does STGD3NB60FT4 include an integrated freewheeling diode?

Yes-the "D" suffix in the part number indicates the standard version with an integrated emitter-collector diode. Electrical characteristics confirm V_f = 1.31 V (typ. @ 1.5 A, 25°C) and t_rr = 45 ns (typ. @ 125°C), verified in Section "Collector-Emitter Diode ("D" Version)" of the datasheet.

Can STGD3NB60FT4 be used in parallel configurations?

Parallel operation is not recommended. The device lacks positive temperature coefficient in V_CE(sat) above 100°C (typical drift is −1.2 mV/°C), risking current imbalance. ST's application note AN4192 explicitly advises against paralleling non-matched PowerMESH™ IGBTs without individual gate resistors and current-sensing feedback.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the maximum single-pulse I_C is limited to 3 A for pulse widths >100 µs, per the SOA curve on page 6. For repetitive pulses, thermal limits dominate: with R_thj-case = 2.1 °C/W, sustained 3 A operation requires case temperature ≤100°C to maintain T_j ≤150°C.

STGD3NB60FT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 6 A

Current - Collector Pulsed (Icm):: 24 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 3A

Power - Max:: 60 W

Switching Energy:: 125µJ (off)

Input Type:: Standard

Gate Charge:: 16 nC

Td (on/off) @ 25°C:: 12.5ns/105ns

Test Condition:: 480V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr):: 45 ns

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STGD3NB60FT4 FAQ

1.How can I place an order for STGD3NB60FT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGD3NB60FT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGD3NB60FT4 reliable?

The price and inventory of STGD3NB60FT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGD3NB60FT4 is usually 5 days.

3.What payment methods are accepted for STGD3NB60FT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGD3NB60FT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGD3NB60FT4?

STGD3NB60FT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGD3NB60FT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGD3NB60FT4?

For technical support, including STGD3NB60FT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGD3NB60FT4 requirements.

6.How does Aetrix verify that STGD3NB60FT4 is sourced from the original manufacturer or authorized distributors?

All STGD3NB60FT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGD3NB60FT4 meets industry standards.

7.What is the process for return or replacement of STGD3NB60FT4?

All STGD3NB60FT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGD3NB60FT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGD3NB60FT4 part is unused and in its original packaging.

Return procedure for STGD3NB60FT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…