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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGD3NB60HDT4

Name: STGD3NB60HDT4
Brand: STMicroelectronics
SKU: STGD3NB60HDT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGD3NB60HDT4

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STGD3NB60HDT4.pdf

Description:: IGBT 600V 10A 50W DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGD3NB60HDT4 from STMicroelectronics is a 600 V, 6 A N-channel PowerMESH™ IGBT co-packaged with a TurboSwitch™ antiparallel diode in DPAK (TO-252) package. It delivers low V_CE(sat) (≤2.8 V @ 3 A), high-frequency switching capability up to 50 kHz, and 5 µs typical short-circuit withstand time. Used in hard-switched and resonant SMPS and PFC stages.

For engineers reviewing the STGD3NB60HDT4 datasheet, STGD3NB60HDT4 pinout, STGD3NB60HDT4 application, or STGD3NB60HDT4 equivalent, key selection criteria include gate charge (21 nC), thermal resistance (2.5 °C/W), tail-current-inclusive off losses, 125 °C-rated V_CE(sat), and integrated diode reverse recovery performance (t_rr = 95 ns @ 125 °C).

Technical Context

This IGBT employs ST's patented strip layout for optimized high-voltage conduction and switching trade-offs. Its "H" suffix denotes high-frequency optimization: reduced fall time (t_f = 77 ns @ 125 °C), low Q_g (21 nC), and minimized E_off (88 µJ @ 125 °C) while maintaining low saturation voltage (1.9 V @ 3 A, 125 °C).

The integrated TurboSwitch™ diode enables bidirectional current handling in bridge configurations. Its fast reverse recovery (Q_rr = 110 nC, I_rrm = 2.7 A) and soft recovery behavior reduce voltage overshoot and EMI in high-dV/dt topologies like LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 400 V nominal in 3-phase rectified systems with margin.
I_C (100°C)	6 A - Continuous collector current rating at case temperature of 100 °C; defines thermal derating limit.
V_CE(sat)	≤2.8 V @ 3 A, 25 °C - Low conduction loss enabling <1.5 W dissipation at 3 A, critical for efficiency in PFC boost stages.
Q_g	21 nC - Total gate charge determines driver power requirement and switching speed control via R_G.
t_f	77 ns @ 125 °C - Fall time directly impacts turn-off energy (E_off = 88 µJ) and maximum practical switching frequency.
R_th(j-case)	2.5 °C/W - Junction-to-case thermal resistance sets minimum heatsink requirement for 50 W total dissipation.
t_rr	95 ns @ 125 °C - Diode reverse recovery time affects commutation loss and snubber design in half-bridge inverters.

Pinout & Package

Package: DPAK (TO-252), surface-mount, single-ended heat transfer via exposed drain pad. Dimensions per ST mechanical drawing P032P_B: 6.1 mm × 6.5 mm × 2.3 mm (L × W × H), with 3-pin configuration.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Emitting terminal of IGBT + cathode of antiparallel diode	Common return path for load current; connects to PCB ground plane for low-inductance routing.
Pin 2 (Gate)	Control electrode of IGBT	High-impedance input requiring <21 nC charge; sensitive to noise-requires local RC snubber and tight layout.
Pin 3 (Drain)	Collector of IGBT + anode of antiparallel diode	High-side switching node; ties to DC bus or transformer primary; requires thermal pad soldering for R_th(j-case) = 2.5 °C/W.

Key Features

Feature	Design Value
PowerMESH™ strip layout	Enables simultaneous low V_CE(sat) and high dV/dt immunity without compromising ruggedness.
Co-packaged TurboSwitch™ diode	Eliminates external freewheeling diode; provides matched t_rr and soft recovery for reduced EMI.
High-frequency optimization ("H" family)	Guarantees t_f ≤ 110 ns and E_off ≤ 88 µJ at 125 °C-enabling 30–50 kHz operation in PFC.
Short-circuit withstand time	5 µs typical-supports robust overcurrent protection in motor drives without desaturation circuitry.
Low gate charge	Q_g = 21 nC reduces gate driver IC stress and allows use of cost-effective 0.5 A drivers.

Applications

Motor Drive Inverter Stage

PFC Boost Converter

Use Scenario: Half-bridge leg in 3-phase BLDC or induction motor drives operating at 10–20 kHz.

IC Role / Device Role / Timing Role: High-side/low-side switching element controlling phase current; handles 600 V DC link with 6 A RMS load.

Use Value: 5 µs short-circuit rating enables cycle-by-cycle current limiting; integrated diode simplifies layout and improves thermal coupling.

Use Scenario: Active boost switch in universal-input (90–264 VAC) PFC front-end for industrial power supplies.

IC Role / Device Role / Timing Role: Fast-switching unidirectional switch in continuous conduction mode (CCM) topology.

Use Value: Low Q_g and t_f allow stable 50 kHz operation with <100 µJ E_off, improving efficiency >96% at full load.

Resonant LLC Converter

UPS Inverter Output Stage

Use Scenario: Primary-side switch in 100–300 kHz LLC resonant converter for telecom rectifiers.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-assisted main switch; leverages fast t_f and low C_oss (33 pF).

Use Value: Soft-recovery TurboSwitch™ diode minimizes body diode conduction loss during ZVS transitions.

Use Scenario: Full-bridge output stage in online double-conversion UPS delivering 1 kVA at 230 VAC.

IC Role / Device Role / Timing Role: 600 V-class switching device handling 6 A peak output current with 125 °C junction operation.

Use Value: V_CE(sat) = 1.9 V @ 125 °C ensures stable conduction loss across ambient temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH60UD1	Higher V_CE(sat) (3.2 V @ 3 A), higher Q_g (42 nC), no integrated diode	Requires external ultrafast diode; less suitable for space-constrained PFC designs	Prefer when higher ruggedness is needed and board area permits discrete diode placement.
FGA25N120ANTD	1200 V rating, higher I_C (25 A), larger TO-247 package, no integrated diode	Over-specified voltage rating for 400 V bus; unsuitable for DPAK footprint-limited designs	Select only when system requires 1200 V headroom or >10 A current capability.

Compared with IRG4PH60UD1 and FGA25N120ANTD, STGD3NB60HDT4 offers the only DPAK-integrated solution with verified 50 kHz capability, lowest gate drive demand, and matched diode timing-making it optimal for compact, high-efficiency SMPS and PFC modules where footprint and thermal coupling are critical.

Availability

STGD3NB60HDT4 is available at Aetrix Electronics and suitable for high-frequency motor controls, SMPS and PFC circuits, and UPS inverter stages requiring stable component supply and long-term industrial availability.

Supply support for STGD3NB60HDT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The PowerMESH™ IGBT product line targets high-efficiency, high-frequency power conversion-including PFC, motor drives, and resonant converters-where low conduction loss, fast switching, and integrated diode functionality are essential.

FAQ

Is STGD3NB60HDT4 still in active production?

Yes, STGD3NB60HDT4 remains an active, non-obsolete part per STMicroelectronics' official product status database and distributor inventory (Digi-Key, Mouser). Though the original datasheet is dated 2003, ST confirms ongoing manufacturing and full lifecycle support with no announced discontinuance.

What is the maximum recommended gate resistor value for 50 kHz operation?

For reliable 50 kHz switching with minimal E_off penalty, ST recommends R_G ≤ 15 Ω (tested at 10 Ω in datasheet). Higher values increase t_f and E_off; values above 22 Ω risk exceeding safe SOA limits under transient conditions.

Can the integrated diode replace a discrete ultrafast diode in a PFC boost stage?

Yes-the co-packaged TurboSwitch™ diode has t_rr = 95 ns and soft recovery (I_rrm = 2.7 A), meeting requirements for 50 kHz CCM PFC. Its thermal coupling to the IGBT die also improves reliability versus discrete mounting.

Does STGD3NB60HDT4 require negative gate drive for robustness?

No-ST specifies ±20 V gate voltage rating but recommends 0 V to +15 V operation. Negative bias is not required; however, a –5 V to –8 V turn-off clamp improves noise immunity in high-dV/dt environments without increasing driver complexity.

STGD3NB60HDT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 10 A

Current - Collector Pulsed (Icm):: 24 A

Vce(on) (Max) @ Vge, Ic:: 2.8V @ 15V, 3A

Power - Max:: 50 W

Switching Energy:: 33µJ (off)

Input Type:: Standard

Gate Charge:: 21 nC

Td (on/off) @ 25°C:: 5ns/53ns

Test Condition:: 480V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr):: 95 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STGD3NB60HDT4 FAQ

1.How can I place an order for STGD3NB60HDT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGD3NB60HDT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGD3NB60HDT4 reliable?

The price and inventory of STGD3NB60HDT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGD3NB60HDT4 is usually 5 days.

3.What payment methods are accepted for STGD3NB60HDT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGD3NB60HDT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGD3NB60HDT4?

STGD3NB60HDT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGD3NB60HDT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGD3NB60HDT4?

For technical support, including STGD3NB60HDT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGD3NB60HDT4 requirements.

6.How does Aetrix verify that STGD3NB60HDT4 is sourced from the original manufacturer or authorized distributors?

All STGD3NB60HDT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGD3NB60HDT4 meets industry standards.

7.What is the process for return or replacement of STGD3NB60HDT4?

All STGD3NB60HDT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGD3NB60HDT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGD3NB60HDT4 part is unused and in its original packaging.

Return procedure for STGD3NB60HDT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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