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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGD3NB60SD-1

Name: STGD3NB60SD-1
Brand: STMicroelectronics
SKU: STGD3NB60SD-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGD3NB60SD-1

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STGD3NB60SD-1.pdf

Description:: IGBT 600V 6A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STGD3NB60SD from STMicroelectronics is an N-channel 600 V, 3 A PowerMESH™ IGBT in DPAK (TO-252) package with integrated freewheeling diode, optimized for low-frequency switching (<1 kHz), featuring 1.2 V typical V_CE(sat) at 3 A and 150 µs typical rise time. It serves as a high-current, low-conduction-loss switch in motor control inverters and static relay drivers.

For engineers reviewing the STGD3NB60SD datasheet, STGD3NB60SD pinout, STGD3NB60SD application, or STGD3NB60SD equivalent, key selection criteria include verified 600 V blocking capability, 1.5 V max V_CE(sat) at 3 A/125°C, integrated diode reverse recovery parameters (t_rr = 1700 ns, Q_rr = 4500 nC), thermal resistance R_thj-case = 3.125 °C/W, and DPAK mechanical footprint compliance per JEDEC TO-252.

Technical Context

This IGBT employs ST's patented PowerMESH™ strip layout to achieve high current density and low conduction losses. Its gate threshold voltage (V_GE(th)) ranges 2.5–4.5 V, enabling direct drive from standard 15 V logic-level controllers without level-shifting.

The integrated fast-recovery diode shares the same die substrate and exhibits 1.55 V forward voltage at 3 A and 9.5 A peak reverse recovery current under 100 A/µs di/dt - critical for snubberless inductive load commutation in lamp ballasts and AC contactors.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	600 V - supports mains-connected 230 VAC systems with ≥2× safety margin against transients
I_C Continuous @ T_C=100°C	3 A - defines maximum sustained output current in thermally constrained enclosures
V_CE(sat) @ 3 A, 125°C	1.5 V max - limits conduction loss to ≤4.5 W at full load, reducing heatsink requirements
R_thj-case	3.125 °C/W - enables 48 W dissipation at 25°C case temperature before reaching 175°C junction limit
t_rr @ 125°C	1700 ns - determines minimum dead-time setting to prevent shoot-through in half-bridge topologies
Q_G	18 nC - sets gate driver power requirement (~270 µW average at 1 kHz switching)
E_off @ 125°C	1.8 mJ - quantifies energy dissipated during turn-off, critical for thermal design at elevated temperatures

Pinout & Package

Package: DPAK (TO-252), surface-mount, single-ended heat sink interface via exposed drain pad. Dimensions conform to JEDEC MO-220 variant P032P_B.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	High-impedance MOS-gated terminal requiring ≤100 nA leakage drive; 15 V rated for robust noise immunity
Pin 2 (Collector)	High-side power output	Drain connection tied to internal IGBT die and cathode of integrated diode; electrically common with exposed pad
Pin 3 (Emitter)	Low-side reference	Source terminal for IGBT and anode for integrated diode; forms return path for load current and gate drive loop

Key Features

Feature	Design Value
Integrated freewheeling diode	Eliminates external diode placement and layout parasitics in H-bridge and inverter legs
Low V_CE(sat) optimization ("S" suffix)	Reduces conduction loss by >25% vs. standard 600 V IGBTs at 3 A, enabling smaller heatsinks
PowerMESH™ strip layout	Improves current sharing uniformity and reduces localized heating under pulsed overload (I_CM = 25 A)
175°C max junction temperature	Supports operation in sealed industrial enclosures without forced air cooling
±20 V gate rating	Withstands transient coupling during fast switching in noisy EMI environments

Applications

Motor Control

Gas Discharge Lamp Ballast

Use Scenario: Single-phase induction motor speed control in HVAC blowers and pump drives operating at 50/60 Hz.

IC Role / Device Role / Timing Role: Low-frequency (≤500 Hz) main power switch in inverter half-bridge leg, handling 3 A RMS load current.

Use Value: 1.2 V typical V_CE(sat) minimizes copper loss in motor windings and extends thermal margin over competing 600 V MOSFETs.

Use Scenario: Ignition and sustaining circuit for fluorescent and HID lamps in commercial lighting fixtures.

IC Role / Device Role / Timing Role: High-voltage switch controlling resonant tank current during lamp strike and steady-state operation.

Use Value: 600 V V_CE rating and 1700 ns t_rr enable reliable zero-voltage switching without external snubbers.

Static Relay

AC Solid-State Switch

Use Scenario: Contactless replacement for electromechanical relays in PLC output modules and industrial control panels.

IC Role / Device Role / Timing Role: Bidirectional AC switching element using back-to-back configuration with complementary devices.

Use Value: Integrated diode eliminates need for external anti-parallel diodes, reducing BOM count and PCB area by 30%.

Use Scenario: Mains-powered heater control in appliance thermostats and industrial ovens.

IC Role / Device Role / Timing Role: Zero-crossing switched power stage delivering 600 W resistive load control at 230 VAC.

Use Value: 3 A continuous current rating at 100°C case temperature ensures stable operation without derating in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH42UD-EP	600 V, 4 A, V_CE(sat) = 1.7 V @ 4 A, TO-220FP package, no integrated diode	Requires external ultrafast diode; higher conduction loss but better thermal performance in through-hole designs	Select when board space allows discrete diode placement and higher peak current (4 A) is required
FGB30N60UNDF	600 V, 30 A, V_CE(sat) = 2.2 V @ 15 A, TO-247 package, no integrated diode	Higher current rating but larger footprint and no built-in diode; suited for high-power (>1 kW) inverters	Select only if system requires >10 A peak current and can accommodate TO-247 mounting and external diode routing

Compared with IRG4PH42UD-EP and FGB30N60UNDF, STGD3NB60SD offers lower system-level component count due to its monolithic diode integration and optimized low-frequency V_CE(sat), making it preferable for cost-sensitive, space-constrained <1 kW AC switching applications where thermal management relies on PCB copper rather than heatsinks.

Availability

STGD3NB60SD is available at Aetrix Electronics and suitable for motor control, gas discharge lamp ballasts, and static relay designs requiring stable component supply across extended production lifecycles.

Supply support for STGD3NB60SD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to the PowerMESH™ IGBT family, engineered specifically for cost-effective, high-reliability AC switching in low-frequency (<1 kHz), medium-power (up to 1 kW) industrial controls and lighting systems.

FAQ

What is the maximum gate-emitter voltage rating for STGD3NB60SD?

The absolute maximum gate-emitter voltage is ±20 V, as specified in the Absolute Maximum Ratings table. Exceeding this value risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to 0 V for turn-off to ensure robust noise immunity and minimize Miller-induced false triggering during high dv/dt events.

Does STGD3NB60SD require an external freewheeling diode?

No. STGD3NB60SD integrates a fast-recovery diode monolithically on the same die, with 3 A forward current rating and 1700 ns reverse recovery time at 125°C. This eliminates the need for an external diode in standard inductive load configurations such as motor drives and lamp ballasts, simplifying layout and reducing component count.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the device supports 3 A continuous collector current up to 600 V, as defined by the SOA curve on page 5 of the datasheet. Pulse operation beyond this point is limited by second breakdown and thermal runaway; the 25 A pulsed rating applies only for ≤300 µs pulses with ≤1.5% duty cycle and adequate heatsinking.

Can STGD3NB60SD be used in a half-bridge configuration without desaturation protection?

While functional, STGD3NB60SD lacks integrated desaturation detection. In half-bridge use, external desat protection (e.g., via sense resistor + comparator) is strongly recommended to prevent destructive latch-up during short-circuit events, especially given its 15 A latching current threshold and 1.8 mJ turn-off loss at 125°C.

STGD3NB60SD-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 6 A

Current - Collector Pulsed (Icm):: 25 A

Vce(on) (Max) @ Vge, Ic:: 1.5V @ 15V, 3A

Power - Max:: 48 W

Switching Energy:: 1.1mJ (on), 1.15mJ (off)

Input Type:: Standard

Gate Charge:: 18 nC

Td (on/off) @ 25°C:: 125µs/3.4µs

Test Condition:: 480V, 3A, 1kOhm, 15V

Reverse Recovery Time (trr):: 1.7 µs

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STGD3NB60SD-1 FAQ

1.How can I place an order for STGD3NB60SD-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGD3NB60SD-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGD3NB60SD-1 reliable?

The price and inventory of STGD3NB60SD-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGD3NB60SD-1 is usually 5 days.

3.What payment methods are accepted for STGD3NB60SD-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGD3NB60SD-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGD3NB60SD-1?

STGD3NB60SD-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGD3NB60SD-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGD3NB60SD-1?

For technical support, including STGD3NB60SD-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGD3NB60SD-1 requirements.

6.How does Aetrix verify that STGD3NB60SD-1 is sourced from the original manufacturer or authorized distributors?

All STGD3NB60SD-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGD3NB60SD-1 meets industry standards.

7.What is the process for return or replacement of STGD3NB60SD-1?

All STGD3NB60SD-1 units undergo pre-shipment inspection (PSI). If there is an issue with STGD3NB60SD-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGD3NB60SD-1 part is unused and in its original packaging.

Return procedure for STGD3NB60SD-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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