Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGD4H60DF

Name: STGD4H60DF
Brand: STMicroelectronics
SKU: STGD4H60DF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STGD4H60DF

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STGD4H60DF.pdf

Description:: IGBT TRENCH FS 600V 8A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:256

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STGD4H60DF from STMicroelectronics is a 600 V, 4 A high-speed trench gate field-stop IGBT with integrated soft-recovery antiparallel diode in DPAK (TO-252) package. It delivers low V_CE(sat) = 1.6 V (typ. @ I_C = 4 A), 3 μs short-circuit withstand time, and R_thJC = 2 °C/W (IGBT), enabling efficient motor control in compact industrial inverters.

For engineers reviewing the STGD4H60DF datasheet, STGD4H60DF pinout, STGD4H60DF application, or STGD4H60DF equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, tight parameter distribution, and optimized conduction/switching loss trade-off for 20–50 kHz converter topologies.

Technical Context

This IGBT employs ST's proprietary trench gate field-stop structure to achieve simultaneous low conduction loss (V_CE(sat) = 1.6 V @ 4 A, 175 °C) and fast switching (t_d(off) = 170 ns @ 175 °C). Its integrated diode features soft recovery (Q_rr = 206 nC, t_rr = 118 ns @ 175 °C) and low forward voltage (V_F = 1.85 V @ 4 A).

The device targets high-frequency hard-switched applications with strict thermal constraints: R_thJC = 2 °C/W (IGBT) and 4.5 °C/W (diode), TJ max = 175 °C, and rated for continuous I_C = 4 A at T_C = 100 °C - confirming suitability for thermally dense PCB layouts without forced cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 400 V nominal with 50% safety margin in industrial motor drives.
I_C (T_C = 100 °C)	4 A - Sustains continuous load current at case temperatures typical of sealed appliance enclosures.
V_CE(sat)	1.6 V @ I_C = 4 A, T_J = 175 °C - Minimizes conduction loss in 24–48 V input inverters driving BLDC motors.
t_sc	3 μs @ V_CC ≤ 360 V - Enables robust overcurrent protection without external desaturation circuitry.
R_thJC (IGBT)	2 °C/W - Allows direct heatsinking to small metal-core PCBs or clip-on finned heatsinks in space-constrained designs.
Q_g	35 nC - Compatible with standard 1–2 A gate drivers (e.g., STGAP2SICSN) without excessive Miller turn-on risk.
E_off	92 μJ @ I_C = 3 A, T_J = 175 °C - Supports 30–50 kHz PWM operation with <1 W switching loss at 3 A.

Pinout & Package

DPAK (TO-252) package with exposed drain tab (pin 2) for thermal and electrical connection; 3-pin configuration with gate (G), collector (C), and emitter (E) terminals. Tab is electrically connected to collector.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ±20 V absolute max; 35 nC total charge enables fast, low-loss turn-on with 47 Ω gate resistor.
2 (Tab/C)	Collector / Thermal Pad	High-current output node and primary thermal path; must be soldered to large copper pour or heatsink for R_thJC = 2 °C/W performance.
3 (E)	Emitter	Reference node for gate drive and current sensing; low-inductance layout critical to suppress voltage spikes during turn-off.

Key Features

Feature	Design Value
Trench gate field-stop structure	Enables 600 V blocking with 1.6 V V_CE(sat) at 4 A, reducing conduction loss by >25% vs planar IGBTs in same package.
Soft-recovery antiparallel diode	Q_rr = 206 nC and t_rr = 118 ns @ 175 °C limit voltage overshoot and EMI during freewheeling in inductive loads.
Positive V_CE(sat) tempco	Ensures current sharing stability when paralleling multiple STGD4H60DF units without active current balancing circuits.
Tight parameter distribution	V_CE(sat) spread ±0.15 V and V_GE(th) spread 5–7 V enable consistent gate drive design across production batches.

Applications

Industrial Motor Control

Dishwasher Pump Drive

Use Scenario: 3-phase inverter stage for 100–500 W BLDC compressors and pumps operating at 20–40 kHz PWM.

IC Role / Device Role / Timing Role: Main switching device in half-bridge leg; handles bidirectional current with integrated diode freewheeling.

Use Value: 3 μs short-circuit rating allows single-chip overcurrent protection; low V_CE(sat) reduces heatsink size by 40% vs legacy 600 V IGBTs.

Use Scenario: Single-phase inverter driving universal or brushless motor in dishwasher circulation pump with variable speed control.

IC Role / Device Role / Timing Role: High-side switch in asymmetric half-bridge topology; conducts peak currents up to 16 A pulsed.

Use Value: Soft diode recovery minimizes audible noise and EMI during zero-cross transitions; 175 °C junction rating supports sealed enclosure operation.

Refrigerator Compressor

Fan Inverter Module

Use Scenario: Variable-speed compressor drive in eco-mode refrigerators requiring >95% efficiency at partial load.

IC Role / Device Role / Timing Role: Low-loss switching element in resonant or hard-switched inverter; operates continuously at 30–50 kHz.

Use Value: Optimized conduction/switching trade-off achieves 0.8 W total loss (conduction + switching) at 3 A, 40 kHz, reducing system thermal load.

Use Scenario: Compact 24 V DC fan inverter for HVAC or server cooling with space-limited PCB layout.

IC Role / Device Role / Timing Role: Output stage switch with integrated diode eliminating external freewheeling component count.

Use Value: DPAK package enables 2-layer board design; R_thJC = 2 °C/W allows passive cooling even at 4 A continuous current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXGH4N60B3D1	Higher V_CE(sat) = 2.2 V @ 4 A; no integrated diode; TO-247 package.	Requires external ultrafast diode; better suited for discrete heatsink mounting with higher power margins.	Select when board-level thermal management is impractical and mechanical heatsinking dominates system cost.
FGA25N120ANTD	1200 V rating; V_CE(sat) = 2.4 V @ 25 A; TO-3P package; no soft diode.	Targeted at higher-voltage solar MPPT or UPS; incompatible with 600 V motor drive thermal profiles.	Choose only if system DC bus exceeds 500 V or requires >10 A continuous current capability.

Compared with IXGH4N60B3D1 and FGA25N120ANTD, STGD4H60DF provides superior integration (built-in soft diode), lower conduction loss at 4 A, and DPAK-compatible thermal performance - making it optimal for cost- and space-sensitive 600 V inverter modules under 500 W.

Availability

STGD4H60DF is available at Aetrix Electronics and suitable for industrial motor control, dishwasher pump drives, refrigerator compressors, and fan inverter modules requiring stable component supply across multi-year production cycles.

Supply support for STGD4H60DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGD4H60DF belongs to the H-series IGBT family engineered specifically for high-efficiency, high-frequency motor drives - balancing conduction and switching losses to maximize inverter efficiency at 20–100 kHz.

FAQ

What is the maximum continuous collector current at 100 °C case temperature?

The STGD4H60DF supports 4 A continuous collector current at T_C = 100 °C, as specified in Table 1 of DS13901 Rev 2. This rating assumes proper PCB copper area for thermal conduction and accounts for derating due to junction temperature limits (T_J ≤ 175 °C). Exceeding this current requires active cooling or reduced duty cycle.

Does STGD4H60DF include an integrated diode, and what are its key recovery characteristics?

Yes, STGD4H60DF integrates a soft-recovery antiparallel diode. At T_J = 175 °C, it exhibits t_rr = 118 ns, Q_rr = 206 nC, and I_rrm = 3.9 A under V_CC = 400 V, I_F = 3 A, and di_F/dt = 160 A/μs. These values ensure low voltage overshoot and reduced EMI during inductive turn-off transitions.

Can STGD4H60DF be paralleled safely, and what design features enable this?

Yes, STGD4H60DF supports safe paralleling due to its slightly positive V_CE(sat) temperature coefficient and tight parameter distribution (V_CE(sat) ±0.15 V, V_GE(th) 5–7 V). These traits ensure natural current sharing across multiple devices without external ballasting resistors or active current sensing.

What gate resistor value is recommended for 40 kHz switching with minimal EMI and loss trade-off?

A 47 Ω gate resistor is validated in the datasheet (Table 5, Figure 26) for V_GE = 15 V, delivering t_d(off) = 170 ns and E_off = 92 μJ at T_J = 175 °C. This value balances switching speed, gate driver stress, and voltage overshoot - confirmed via measurement on inductive loads with 100 µH and 400 V bus.

STGD4H60DF Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: H

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 8 A

Current - Collector Pulsed (Icm):: 16 A

Vce(on) (Max) @ Vge, Ic:: 1.95V @ 15V, 3A

Power - Max:: 75 W

Switching Energy:: 68µJ (on), 45µJ (off)

Input Type:: Standard

Gate Charge:: 35 nC

Td (on/off) @ 25°C:: 35ns/121ns

Test Condition:: 400V, 3A, 47Ohm, 15V

Reverse Recovery Time (trr):: 73 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK (TO-252) type C2

STGD4H60DF FAQ

1.How can I place an order for STGD4H60DF through Aetrix?

Please submit a Request for Quotation (RFQ) for STGD4H60DF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGD4H60DF reliable?

The price and inventory of STGD4H60DF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGD4H60DF is usually 5 days.

3.What payment methods are accepted for STGD4H60DF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGD4H60DF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGD4H60DF?

STGD4H60DF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGD4H60DF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGD4H60DF?

For technical support, including STGD4H60DF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGD4H60DF requirements.

6.How does Aetrix verify that STGD4H60DF is sourced from the original manufacturer or authorized distributors?

All STGD4H60DF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGD4H60DF meets industry standards.

7.What is the process for return or replacement of STGD4H60DF?

All STGD4H60DF units undergo pre-shipment inspection (PSI). If there is an issue with STGD4H60DF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGD4H60DF part is unused and in its original packaging.

Return procedure for STGD4H60DF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…