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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGD4M65DF2

Name: STGD4M65DF2
Brand: STMicroelectronics
SKU: STGD4M65DF2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGD4M65DF2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STGD4M65DF2.pdf

Description:: IGBT TRENCH FS 650V 8A DPAK

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Product details

Overview

STGD4M65DF2 from STMicroelectronics is a trench-gate field-stop 650 V, 4 A IGBT with integrated soft-recovery antiparallel diode in DPAK (TO-252) package. It delivers 1.6 V typical V_CE(sat) at I_C = 4 A and 6 µs short-circuit withstand time at T_J = 150 °C, enabling robust motor control inverters and PFC stages operating up to 175 °C junction temperature.

For engineers reviewing the STGD4M65DF2 datasheet, STGD4M65DF2 pinout, STGD4M65DF2 application, or STGD4M65DF2 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for safe paralleling, tight parameter distribution, low R_thJC (2.2 °C/W), and verified 133 ns typ. diode reverse recovery time at 25 °C.

Technical Context

This IGBT uses ST's M-series trench gate field-stop structure optimized for balanced conduction loss and switching performance in 400–600 V inverter systems. Its design integrates a monolithic fast-recovery diode with soft recovery characteristics (dI_rr/dt ≤ 520 A/µs, Q_rr = 140 nC typ.) to minimize voltage overshoot and EMI during commutation.

The device features a positive V_CE(sat) temperature coefficient across –40 to 175 °C, enabling stable current sharing in parallel configurations. Gate charge parameters (Q_g = 15.2 nC, Q_gc = 7 nC) support efficient 47 Ω gate drive design while maintaining 480 A/µs turn-on di/dt at 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage under open-gate conditions; supports 400 V DC-link PFC and motor drives with margin.
I_C (T_C = 100 °C)	4 A - Continuous collector current derated for thermal management on standard PCBs with 100 °C case temperature.
V_CE(sat) (T_J = 25 °C)	1.6 V typ. - Low conduction loss at rated current; reduces heat generation in compact inverter modules.
t_sc	6 µs - Short-circuit withstand time at V_GE = 15 V and T_Jstart = 150 °C; enables reliable fault handling without external desat detection.
R_thJC (IGBT)	2.2 °C/W - Junction-to-case thermal resistance; allows ≥30 W power dissipation at ΔT = 66 °C with minimal heatsinking.
Q_rr	140 nC typ. - Reverse recovery charge of integrated diode; determines turn-on loss contribution and snubber sizing.
E_off	0.136 mJ - Turn-off energy at 400 V, 4 A, 47 Ω gate resistance; defines driver power requirement and switching loss budget.

Pinout & Package

DPAK (TO-252) package with exposed drain pad (pin 2) for thermal and electrical connection. Standard 3-pin configuration: Gate (pin 1), Emitter (pin 3), Collector/Drain (pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires ±20 V absolute max rating; 15.2 nC total gate charge dictates RC timing and driver strength.
Pin 2	Collector / Drain	Main high-side power terminal; electrically and thermally connected to exposed copper pad; must be soldered to large copper area.
Pin 3	Emitter	Reference node for gate drive and current sensing; low-inductance layout critical to avoid false triggering during fast switching.

Key Features

Feature	Design Value
Short-circuit ruggedness	6 µs withstand at 150 °C junction start temperature-enables simplified protection circuitry in industrial motor drives.
Integrated diode recovery	Soft reverse recovery with 133 ns t_rr and 5 A I_rrm-reduces voltage spikes and EMI in bidirectional switching applications.
Paralleling capability	Positive V_CE(sat) tempco + tight parameter spread-allows direct parallel connection without current-sharing resistors.
Thermal efficiency	2.2 °C/W R_thJC for IGBT + 5.0 °C/W for diode-supports higher power density than comparable DPAK IGBTs with separate diodes.
High-temperature operation	Rated up to 175 °C junction temperature-enables operation in sealed enclosures or high ambient environments without derating.

Applications

Motor Control Inverters

PFC Boost Stages

Use Scenario: 3-phase BLDC or induction motor drives in HVAC compressors and industrial pumps operating at 20–200 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 4 A RMS output current with integrated freewheeling diode.

Use Value: 6 µs short-circuit tolerance eliminates need for fast desaturation circuits; soft diode recovery reduces snubber losses by >25% vs. standard FRD.

Use Scenario: Active boost PFC stage in 1–2 kW server PSUs and telecom rectifiers with 400 V DC output.

IC Role / Device Role / Timing Role: Switching element in continuous conduction mode (CCM) boost converter; operates at 65–100 kHz.

Use Value: 1.6 V V_CE(sat) minimizes conduction loss at peak line current; tight V_CE(sat) distribution ensures consistent thermal stress across multi-phase designs.

UPS Output Inverters

Solar Microinverters

Use Scenario: Single-phase 1 kVA online UPS with pure sine wave output and battery backup switching.

IC Role / Device Role / Timing Role: Half-bridge switch in H-bridge inverter stage; conducts 4 A peak load current with 175 °C junction limit.

Use Value: Positive V_CE(sat) tempco enables stable parallel operation for redundancy; low Q_g (15.2 nC) supports efficient isolated gate drive.

Use Scenario: 250–300 W microinverter DC-AC stage converting PV panel output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in full-bridge topology; commutates bidirectionally with integrated diode conducting reactive current.

Use Value: 133 ns diode t_rr and soft recovery reduce EMI filtering requirements; DPAK footprint simplifies thermal management on double-sided PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGD3HF60S	600 V, 3 A, TO-252; lower current rating and no integrated diode; R_thJC = 2.5 °C/W.	Requires external diode; suitable only for lower-power (<1.5 kW) PFC or auxiliary inverters.	Select when cost sensitivity outweighs integration benefit and system current stays below 3 A.
IXGH4N60B3D1	600 V, 4 A, TO-220AB; discrete IGBT + separate ultrafast diode; R_thJC = 1.5 °C/W but larger footprint.	Higher thermal performance but needs two components and more board space; diode Q_rr = 100 nC (harder recovery).	Prefer for high-reliability 175 °C ambient designs where TO-220 mechanical robustness is required over DPAK size.

Compared with STGD3HF60S, STGD4M65DF2 offers higher voltage rating, integrated diode, and superior short-circuit ruggedness; versus IXGH4N60B3D1, it trades 0.3 °C/W higher R_thJC for 30% smaller footprint and guaranteed soft recovery behavior.

Availability

STGD4M65DF2 is available at Aetrix Electronics and suitable for motor control inverters, UPS output stages, and PFC boost converters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for STGD4M65DF2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STGD4M65DF2 belongs to the M-series IGBT family engineered specifically for high-efficiency, high-reliability 400–600 V inverter systems where low conduction loss, short-circuit ruggedness, and safe paralleling are mandatory.

FAQ

What is the maximum gate-emitter voltage rating for STGD4M65DF2?

The absolute maximum V_GE is ±20 V per datasheet Table 1. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is 15 V for turn-on and –5 to –8 V for turn-off to ensure robust noise immunity and prevent Miller-induced false turn-on during high di/dt events.

Does STGD4M65DF2 require an external freewheeling diode?

No. STGD4M65DF2 integrates a monolithic soft-recovery antiparallel diode rated for 4 A continuous forward current at T_C = 100 °C. Its 133 ns reverse recovery time and 5 A peak reverse recovery current are characterized for inductive load switching and eliminate the need for an external diode in half-bridge or full-bridge topologies.

How does the short-circuit withstand time vary with gate voltage?

t_sc increases from 6 µs at V_GE = 15 V to 10 µs at V_GE = 13 V (T_Jstart = 150 °C), as shown in Figure 19. Lower gate voltage extends safe short-circuit duration but increases V_CE(sat); system-level trade-offs between fault response time and conduction loss must be evaluated per application.

Can STGD4M65DF2 be paralleled with identical units without external balancing components?

Yes. Its positive V_CE(sat) temperature coefficient and tight parameter distribution (±10% V_CE(sat)) enable stable current sharing across parallel devices. Layout symmetry-especially matched gate loop inductance and emitter degeneration-is still required to prevent dynamic imbalance during switching transitions.

STGD4M65DF2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: M

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 8 A

Current - Collector Pulsed (Icm):: 16 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 4A

Power - Max:: 68 W

Switching Energy:: 40µJ (on), 136µJ (off)

Input Type:: Standard

Gate Charge:: 15.2 nC

Td (on/off) @ 25°C:: 12ns/86ns

Test Condition:: 400V, 4A, 47Ohm, 15V

Reverse Recovery Time (trr):: 133 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STGD4M65DF2 FAQ

1.How can I place an order for STGD4M65DF2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGD4M65DF2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGD4M65DF2 reliable?

The price and inventory of STGD4M65DF2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGD4M65DF2 is usually 5 days.

3.What payment methods are accepted for STGD4M65DF2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGD4M65DF2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGD4M65DF2?

STGD4M65DF2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGD4M65DF2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGD4M65DF2?

For technical support, including STGD4M65DF2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGD4M65DF2 requirements.

6.How does Aetrix verify that STGD4M65DF2 is sourced from the original manufacturer or authorized distributors?

All STGD4M65DF2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGD4M65DF2 meets industry standards.

7.What is the process for return or replacement of STGD4M65DF2?

All STGD4M65DF2 units undergo pre-shipment inspection (PSI). If there is an issue with STGD4M65DF2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGD4M65DF2 part is unused and in its original packaging.

Return procedure for STGD4M65DF2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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