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STMicroelectronics STGD5NB120SZ-1

Part No.:
STGD5NB120SZ-1
Manufacturer:
STMicroelectronics
Category:
Single IGBTs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixSTGD5NB120SZ-1.pdf
Description:
IGBT 1200V 10A TO251
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,707

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Product details

Overview

STGD5NB120SZ-1 from STMicroelectronics is a 1200 V, 5 A low-drop internally clamped IGBT in DPAK (TO-252) package, featuring 1.3–2.0 V VCE(sat) at 5 A/15 V, 1.67 °C/W RthJC, and optimized for low-frequency switching in industrial motor drives and UPS systems.

For engineers reviewing the STGD5NB120SZ-1 datasheet, STGD5NB120SZ-1 pinout, STGD5NB120SZ-1 application, or STGD5NB120SZ-1 equivalent, this page delivers verified electrical specs, thermal behavior, real-world switching waveforms, and validated alternatives for high-voltage, low-duty-cycle power control designs.

Technical Context

This IGBT uses ST's PowerMESH process to balance conduction loss and switching performance-achieving low VCE(sat) while maintaining robust 1200 V blocking capability and integrated clamping diode functionality. Its gate threshold voltage (2–5 V) and ±20 V VGE rating support standard 15 V gate drivers with margin.

Designed for inductive loads, it delivers 39.6 A/µs (di/dt)on and 12.1 ns td(off) under 960 V, 5 A conditions with 1 kΩ gate resistor-enabling predictable turn-off energy (9–10.2 mJ) across -55 to 150 °C junction temperature range.

Key Specifications

ParameterValue and Actual Design Meaning
VCES1200 V - supports DC bus voltages up to 960 V in industrial inverters with safety margin
IC (TC = 100 °C)5 A - continuous current rating at elevated case temperature for thermally constrained PCB layouts
VCE(sat)1.3–2.0 V @ 5 A/15 V - low conduction loss enabling <10 W dissipation at rated current
RthJC1.67 °C/W - enables direct heatsink mounting with predictable thermal rise under 75 W PTOT
Eoff9–10.2 mJ @ 960 V/5 A - defines snubber sizing and driver power requirements for reliable turn-off
Cies430 pF - determines gate drive current demand and Miller effect sensitivity in high-dV/dt environments
VGE(th)2–5 V - ensures clean turn-on with standard logic-level gate drivers and noise immunity margin

Pinout & Package

Package: DPAK (TO-252), surface-mount, single-ended heat transfer via exposed drain pad. Compliant with ECOPACK environmental standards.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main high-side power terminalConnected to DC bus or inductive load; carries full switched current and withstands 1200 V
Gate (G)Control inputReceives 15 V drive signal; 4 kΩ internal gate resistance limits peak current and dV/dt sensitivity
Emitter (E)Power return and reference nodeServes as current return path and gate driver ground reference; critical for layout stability

Key Features

FeatureDesign Value
Internally clamped structureEliminates need for external freewheeling diode in inductive switching, reducing BOM count and layout area
Low VCE(sat) at 125 °C1.2 V @ 5 A - maintains efficiency over full operating temperature range without derating
High ruggedness (10 A ICL)Guarantees safe operation during short-circuit events with 80% VCES clamping at 150 °C
Optimized for fSW ≤ 20 kHzDelivers best trade-off between Eon/Eoff and conduction loss-ideal for motor drives and SMPS PFC stages

Applications

Industrial Motor DrivesUninterruptible Power Supplies (UPS)

Use Scenario: Single-phase or three-phase inverter stage controlling induction motors in HVAC blowers or pumps.

IC Role / Device Role / Timing Role: High-voltage switch in low-frequency (≤10 kHz) PWM output stage, handling 5 A RMS load current.

Use Value: Internal clamping reduces component count and improves reliability during motor regeneration events.

Use Scenario: DC-AC inverter section converting battery-backed DC to 50/60 Hz AC output.

IC Role / Device Role / Timing Role: Output stage IGBT switching at 10–20 kHz with 960 V DC link voltage.

Use Value: Low VCE(sat) minimizes conduction loss during extended backup runtime, extending battery life.

Solar Inverters (String Level)Welding Equipment

Use Scenario: DC-AC conversion in string inverters where DC input reaches 1000 V.

IC Role / Device Role / Timing Role: High-side switch in H-bridge topology operating at 16 kHz with 1200 V blocking requirement.

Use Value: 1200 V VCES rating accommodates PV string open-circuit voltage surges without derating.

Use Scenario: Primary-side switching in inverter-based arc welders requiring high peak current pulses.

IC Role / Device Role / Timing Role: Low-duty-cycle, high-current (10 A pulsed) switch controlling transformer primary winding.

Use Value: 10 A ICP and 10 A ICL ratings ensure robustness during repetitive short-circuit welding arcs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, low-frequency IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXGH50N120B3D11200 V, 50 A, TO-247 package; higher current, larger footprint, no internal clampRequires external anti-parallel diode; suited for higher-power (>1 kW) designs with active heatsinkingSelect when system requires >10 A continuous current and can accommodate TO-247 mechanical constraints
FGB30N120FTU1200 V, 30 A, TO-220FP package; lower RthJC (1.0 °C/W); no internal clampNeeds external diode; better thermal performance but higher BOM cost and layout complexityPrefer when thermal budget is tight and discrete diode integration is acceptable

Compared with IXGH50N120B3D1 and FGB30N120FTU, STGD5NB120SZ-1 offers integrated clamping and DPAK compactness-reducing board space and assembly steps-while trading off peak current capability for simplified, cost-sensitive <1 kW industrial controls.

Availability

STGD5NB120SZ-1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and welding equipment requiring stable component supply and long-term production continuity.

Supply support for STGD5NB120SZ-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering innovative analog, digital, and mixed-signal solutions for automotive, industrial, and consumer markets.

This device belongs to ST's PowerMESH IGBT family-engineered specifically for cost-effective, thermally efficient high-voltage switching in industrial motor control and power conversion systems operating below 20 kHz.

FAQ

What is the maximum gate-emitter voltage for reliable operation?

The absolute maximum VGE is ±20 V per datasheet Table 1. Operation at 15 V is recommended for optimal switching speed and noise immunity. Exceeding ±20 V risks permanent gate oxide damage, and sustained operation above ±15 V increases risk of Miller-induced false turn-on in high-dV/dt environments.

Does STGD5NB120SZ-1 require an external freewheeling diode?

No. The device integrates an internal clamping diode, eliminating the need for an external anti-parallel diode in inductive load applications. This simplifies PCB layout and reduces BOM cost-confirmed by the "internally clamped" designation in the product description and Figure 16 switching waveform showing inherent clamping behavior.

How does junction temperature affect VCE(sat) performance?

VCE(sat) decreases slightly with rising temperature: 1.3–2.0 V at 25 °C vs. 1.2 V at 125 °C (Table 3). This negative temperature coefficient improves current sharing in parallel configurations but requires gate drive design to maintain sufficient overdrive margin across the full -55 to 150 °C operating range.

What is the recommended gate resistor value for standard operation?

A 1 kΩ gate resistor is used in all switching characterization tests (Tables 5–6) and is recommended for general-purpose use. It balances switching speed (12.1 ns td(off)), Eoff (9 mJ), and gate driver stress. Lower values increase dV/dt and EMI risk; higher values slow switching and raise total switching losses.

STGD5NB120SZ-1 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
PowerMESH™
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
10 A
Current - Collector Pulsed (Icm):
10 A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 5A
Power - Max:
75 W
Switching Energy:
2.59mJ (on), 9mJ (off)
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
690ns/12.1µs
Test Condition:
960V, 5A, 1kOhm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-251 (IPAK)

STGD5NB120SZ-1 FAQ

1.How can I place an order for STGD5NB120SZ-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGD5NB120SZ-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGD5NB120SZ-1 reliable?

The price and inventory of STGD5NB120SZ-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGD5NB120SZ-1 is usually 5 days.

3.What payment methods are accepted for STGD5NB120SZ-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGD5NB120SZ-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGD5NB120SZ-1?

STGD5NB120SZ-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGD5NB120SZ-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGD5NB120SZ-1?

For technical support, including STGD5NB120SZ-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGD5NB120SZ-1 requirements.

6.How does Aetrix verify that STGD5NB120SZ-1 is sourced from the original manufacturer or authorized distributors?

All STGD5NB120SZ-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGD5NB120SZ-1 meets industry standards.

7.What is the process for return or replacement of STGD5NB120SZ-1?

All STGD5NB120SZ-1 units undergo pre-shipment inspection (PSI). If there is an issue with STGD5NB120SZ-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGD5NB120SZ-1 part is unused and in its original packaging.

Return procedure for STGD5NB120SZ-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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