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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGD5NB120SZT4

Name: STGD5NB120SZT4
Brand: STMicroelectronics
SKU: STGD5NB120SZT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGD5NB120SZT4

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STGD5NB120SZT4.pdf

Description:: IGBT 1200V 10A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:1,340

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Product details

Overview

STGD5NB120SZT4 from STMicroelectronics is a 1200 V, 5 A low-drop internally clamped IGBT in DPAK (TO-252) package, fabricated using PowerMESH technology. It delivers V_CE(sat) = 1.3–2.0 V at 5 A/15 V, supports 960 V inductive switching, and features integrated clamping for robust overvoltage protection in low-frequency motor drives and industrial power converters.

For engineers reviewing the STGD5NB120SZT4 datasheet, STGD5NB120SZT4 pinout, STGD5NB120SZT4 application, or STGD5NB120SZT4 equivalent, key selection criteria include its 1200 V blocking rating, 1.67 °C/W junction-to-case thermal resistance, internal clamping diode, and suitability for <10 kHz switching in high-voltage DC link stages.

Technical Context

This IGBT employs ST's PowerMESH vertical structure to optimize conduction loss versus switching speed trade-off. Its internal clamping function activates at ~80% of V_CES (≈960 V), eliminating need for external snubbers in inductive turn-off scenarios.

Dynamic performance is characterized under standardized 960 V/5 A inductive load conditions with 1 kΩ gate resistor. Turn-off energy (E_off) is 9–10.2 mJ across temperature, while crossover time remains stable at 4–5 µs - critical for reliable hard-switched flyback and phase-control topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - Enables direct use in 800 V DC bus systems with 50% voltage margin for transients.
I_C (T_C = 100 °C)	5 A - Sustains continuous operation at elevated heatsink temperatures without derating below rated current.
V_CE(sat)	1.3–2.0 V @ 5 A/15 V - Low conduction loss reduces heat generation in linear-mode or low-freq PWM applications.
R_thJC	1.67 °C/W - Allows direct mounting to heatsink with predictable thermal path; enables compact thermal design.
E_off	9–10.2 mJ @ 960 V/5 A - Quantifies energy dissipated during turn-off; informs heatsink sizing and efficiency calculation.
C_ies	430 pF @ 25 V - Input capacitance impacts gate drive strength requirement and EMI filter design.
T_J range	−55 to +150 °C - Supports operation in harsh industrial environments including outdoor power supplies and traction control units.

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection; standard 3-pin surface-mount outline conforming to JEDEC TO-252-2 variant (type C3 per DS3341 Rev 10).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to high-voltage DC rail; electrically tied to exposed metal tab for thermal conduction and low-inductance return path.
Gate (G)	Control input	High-impedance MOS-driven terminal requiring 15 V nominal drive; RG = 4 kΩ typical internal gate resistance limits dV/dt sensitivity.
Emitter (E)	Reference and current return	Low-side reference node; must be routed with minimal inductance to avoid shoot-through risk during switching transitions.

Key Features

Feature	Design Value
Internally clamped collector-emitter	Clamps at ≈960 V (80% V_CES) without external components - eliminates snubber losses and layout complexity.
PowerMESH trench-gate structure	Optimizes V_CE(sat)/E_off balance for 1–10 kHz switching - ideal for phase-angle dimmers and AC-DC PFC pre-regulators.
150 °C maximum junction temperature	Enables operation in sealed enclosures or high-ambient environments without forced air cooling.
ECOPACK-compliant DPAK	Meets RoHS and halogen-free requirements; compatible with lead-free reflow profiles (JEDEC J-STD-020).

Applications

Industrial Motor Drives

AC-DC Phase-Control Rectifiers

Use Scenario: Single-phase 230 V AC input rectification with thyristor/IGBT-based phase-angle control for heating elements and industrial ovens.

IC Role / Device Role / Timing Role: Main switching device in half-wave or full-wave controlled rectifier stage; operates at line frequency (50/60 Hz) with variable conduction angle.

Use Value: Internal clamping prevents destructive overvoltage during inductive load commutation; low V_CE(sat) minimizes conduction loss at high RMS currents.

Use Scenario: High-voltage DC link switching in offline SMPS front-end stages with active PFC or boost converter topology.

IC Role / Device Role / Timing Role: High-side switch in discontinuous conduction mode (DCM) boost converter operating at 20–100 kHz.

Use Value: 1200 V rating accommodates 800 V DC bus with margin; 1.67 °C/W R_thJC allows direct heatsink mounting without thermal interface pads.

Induction Heating Generators

Uninterruptible Power Supplies (UPS)

Use Scenario: Half-bridge inverter stage driving resonant LC tank in medium-frequency (10–50 kHz) induction cooktops and industrial heaters.

IC Role / Device Role / Timing Role: Low-frequency hard-switched IGBT in asymmetrical half-bridge configuration; handles peak currents up to 10 A pulsed.

Use Value: 10 A pulsed current rating (I_CP) supports short-duration overload; clamping protects against transformer leakage inductance spikes.

Use Scenario: Static bypass switch and inverter output stage in line-interactive UPS systems handling 120/230 V AC output with battery backup.

IC Role / Device Role / Timing Role: Bidirectional switching element in transfer switch and inverter H-bridge leg; operates in both linear and saturated modes.

Use Value: −55 to +150 °C operating range ensures reliability across wide ambient conditions; 50 µA I_CES at 900 V guarantees low leakage in standby mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRGP4062DPBF	1200 V, 10 A, TO-247 package; higher I_C but no internal clamp; R_thJC = 0.75 °C/W	Requires external clamping network; better suited for forced-air-cooled high-power inverters	Select when higher continuous current and lower thermal resistance are prioritized over board space and snubber simplicity.
FGB30N120ANTD	1200 V, 30 A, TO-247; includes anti-parallel diode; V_CE(sat) = 2.4 V typ. at 15 A	Designed for full-bridge motor drives; higher current capability increases cost and gate drive demand	Choose for high-current three-phase inverter legs where integrated diode and higher pulse rating justify larger footprint.

Compared with IRGP4062DPBF and FGB30N120ANTD, STGD5NB120SZT4 offers superior integration density and simplified layout via internal clamping, making it optimal for space-constrained, low-to-mid power (<1 kW) industrial controls where thermal management relies on passive heatsinking.

Availability

STGD5NB120SZT4 is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC phase-control rectifiers, induction heating generators, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for STGD5NB120SZT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This IGBT belongs to ST's PowerMESH IGBT portfolio, engineered specifically for rugged, low-frequency switching in industrial power conversion where reliability, voltage margin, and thermal simplicity outweigh ultra-fast switching needs.

FAQ

What is the maximum gate-emitter voltage rating for STGD5NB120SZT4?

The absolute maximum V_GE is ±20 V, with recommended operating range of −10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative bias below −10 V may cause unintended turn-on due to Miller effect in high-dV/dt environments. Gate drive circuits must limit transient overshoot using Zener clamps or active regulation.

Does STGD5NB120SZT4 include an integrated freewheeling diode?

No - STGD5NB120SZT4 is a single N-channel IGBT without an integrated anti-parallel diode. External fast-recovery or SiC Schottky diodes must be used in bridge configurations. The internal clamping function protects only against overvoltage during turn-off, not reverse conduction.

How does junction temperature affect V_CE(sat) performance?

V_CE(sat) decreases with rising junction temperature: from 1.3–2.0 V at 25 °C to 1.2 V typical at 125 °C (per Table 3). This negative temperature coefficient improves current sharing in parallel configurations but requires careful gate drive design to avoid thermal runaway under short-circuit conditions.

Can STGD5NB120SZT4 be used in avalanche mode?

No - this device is not rated for repetitive avalanche operation. Its internal clamping is a one-time protective feature triggered near 960 V, not a designed avalanche-rated structure. Sustained operation above V_CES or unclamped inductive turn-off will cause immediate failure. Layout must ensure clamping activation before breakdown.

STGD5NB120SZT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 10 A

Current - Collector Pulsed (Icm):: 10 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 5A

Power - Max:: 75 W

Switching Energy:: 2.59mJ (on), 9mJ (off)

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 690ns/12.1µs

Test Condition:: 960V, 5A, 1kOhm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STGD5NB120SZT4 FAQ

1.How can I place an order for STGD5NB120SZT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGD5NB120SZT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGD5NB120SZT4 reliable?

The price and inventory of STGD5NB120SZT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGD5NB120SZT4 is usually 5 days.

3.What payment methods are accepted for STGD5NB120SZT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGD5NB120SZT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGD5NB120SZT4?

STGD5NB120SZT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGD5NB120SZT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGD5NB120SZT4?

For technical support, including STGD5NB120SZT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGD5NB120SZT4 requirements.

6.How does Aetrix verify that STGD5NB120SZT4 is sourced from the original manufacturer or authorized distributors?

All STGD5NB120SZT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGD5NB120SZT4 meets industry standards.

7.What is the process for return or replacement of STGD5NB120SZT4?

All STGD5NB120SZT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGD5NB120SZT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGD5NB120SZT4 part is unused and in its original packaging.

Return procedure for STGD5NB120SZT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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