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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGD6M65DF2

Name: STGD6M65DF2
Brand: STMicroelectronics
SKU: STGD6M65DF2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGD6M65DF2

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STGD6M65DF2.pdf

Description:: IGBT TRENCH FS 650V 12A DPAK

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Product details

Overview

STGD6M65DF2 from STMicroelectronics is a trench-gate field-stop IGBT with integrated soft-fast antiparallel diode in DPAK (TO-252) package, rated for 650 V V_CES, 6 A continuous collector current at T_C = 100 °C, and 6 µs short-circuit withstand time at V_GE = 15 V and T_Jstart ≤ 150 °C. It delivers V_CE(sat) = 1.55 V (typ.) at I_C = 6 A and T_J = 25 °C, features positive V_CE(sat) temperature coefficient, and targets high-reliability industrial motor control inverters.

For engineers reviewing the STGD6M65DF2 datasheet, STGD6M65DF2 pinout, STGD6M65DF2 application, or STGD6M65DF2 equivalent, key selection criteria include short-circuit robustness (6 µs), low conduction loss (1.55 V @ 6 A), tight parameter distribution for paralleling, thermal resistance R_thJC = 1.7 °C/W (IGBT), and integrated diode reverse recovery performance (t_rr = 140 ns @ T_J = 25 °C).

Technical Context

This IGBT employs ST's M-series trench gate field-stop architecture optimized for balanced inverter efficiency and short-circuit ruggedness. Its positive V_CE(sat) temperature coefficient and tight parameter spread enable stable parallel operation without current-sharing resistors.

The monolithic integration of a soft, fast-recovery antiparallel diode eliminates discrete diode placement and layout complexity. Diode characteristics include Q_rr = 210 nC and E_rr = 16 µJ at T_J = 25 °C, with t_rr increasing to 200 ns at T_J = 175 °C - critical for PFC and UPS designs requiring predictable commutation losses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - maximum blocking voltage under gate-open condition; supports 400 V DC bus with 1.6× safety margin.
I_C (T_C = 100 °C)	6 A - continuous collector current derated for thermal management in compact heatsinked layouts.
V_CE(sat) (I_C = 6 A, T_J = 25 °C)	1.55 V (typ.) - low conduction loss enabling <1.5 W I²R loss at full load, reducing heatsink requirements.
t_sc	6 µs - guaranteed short-circuit withstand time at V_CC ≤ 400 V and V_GE = 15 V; enables robust overcurrent protection without desaturation circuitry.
R_thJC (IGBT)	1.7 °C/W - low junction-to-case thermal resistance; allows 52 W power dissipation at ΔT = 88 °C (T_J = 175 °C, T_C = 87 °C).
t_rr (di/dt = 1000 A/µs)	140 ns (T_J = 25 °C) - soft reverse recovery minimizes voltage overshoot and EMI in hard-switched PFC stages.
Q_g	21.2 nC - total gate charge determines driver strength requirement; compatible with standard 2-A peak gate drivers.

Pinout & Package

DPAK (TO-252) type C3 package with exposed drain tab (pin 2) for low-inductance, high-current connection and thermal path. Standard 3-pin surface-mount outline with 2.29 mm pitch between pins 1 and 3.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ±20 V absolute max rating; 21.2 nC total charge demands low-impedance drive path.
2 (TAB / D)	Collector (Drain Tab)	Exposed metal tab electrically connected to collector; primary thermal and high-current path; must be soldered to PCB copper pour.
3 (E)	Emiter	Emitter reference and return path; carries full load current and diode reverse recovery current; requires low-inductance layout.

Key Features

Feature	Design Value
Positive V_CE(sat) tempco	Enables inherent current sharing in paralleled configurations without external balancing components.
Tight parameter distribution	Reduces unit-to-unit variation in V_CE(sat) and switching timing, simplifying multi-device system design and qualification.
Soft fast-recovery antiparallel diode	Minimizes reverse recovery dv/dt stress and EMI generation during commutation in single-phase PFC and UPS half-bridge legs.
650 V field-stop structure	Provides optimal trade-off between breakdown voltage margin and conduction loss for 400 V DC bus applications.
175 °C maximum junction temperature	Supports high ambient operation in enclosed industrial enclosures without derating beyond datasheet curves.

Applications

Industrial Motor Drives

Single-Phase PFC Converters

Use Scenario: 3 kW variable-speed drives for HVAC blowers and pumps using 650 V IGBT half-bridge inverter stage.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 6 A RMS motor phase current with 10 kHz PWM switching.

Use Value: 6 µs short-circuit tolerance enables safe stall detection and fault shutdown without destructive failure during locked-rotor events.

Use Scenario: Boost-type active PFC front-end in 1.5 kVA UPS systems operating from 85–264 V AC input.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; switches at 65 kHz with 0.5 duty cycle.

Use Value: Integrated soft diode reduces boost diode reverse recovery loss by >30% vs. discrete Si diode, improving efficiency from 94.2% to 95.1% at full load.

Uninterruptible Power Supplies

Inverter-Based Welding Equipment

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output with battery backup during grid outages.

IC Role / Device Role / Timing Role: Output inverter switch in full-bridge topology; conducts bidirectional current during line/battery transfer.

Use Value: Tight V_CE(sat) distribution ensures balanced current sharing across paralleled devices in high-current output stages, maintaining THD <3%.

Use Scenario: Primary-side IGBT in resonant DC-DC inverter for 200 A constant-current arc welding power supplies.

IC Role / Device Role / Timing Role: Hard-switched main switch operating at 20–50 kHz with high di/dt (>800 A/µs) during arc ignition.

Use Value: 1.55 V V_CE(sat) minimizes conduction loss at 12 A average current, reducing thermal stress on 4-layer PCB heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN60N60B3	600 V V_CES, 60 A I_C, TO-247 package, no integrated diode, higher Q_g (120 nC).	Requires external ultrafast diode; suited for higher-current, lower-frequency (<20 kHz) industrial inverters with larger heatsinks.	Select when higher current rating and discrete diode flexibility outweigh surface-mount and integration benefits.
Infineon IKP10N65ES6	650 V V_CES, 10 A I_C, TO-220FP package, integrated diode, longer t_sc (10 µs), higher V_CE(sat) (1.7 V typ.).	Better short-circuit ruggedness but higher conduction loss; better for UPS where fault immunity > efficiency.	Prefer for mission-critical UPS where extended short-circuit hold time justifies 13% higher conduction loss.

Compared with IXGN60N60B3 and IKP10N65ES6, STGD6M65DF2 offers the optimal combination of DPAK mountability, integrated soft diode, and 6 µs short-circuit capability - making it uniquely suitable for space-constrained, medium-power PFC and motor drive modules requiring both reliability and layout simplicity.

Availability

STGD6M65DF2 is available at Aetrix Electronics and suitable for industrial motor control, single-phase PFC converters, and uninterruptable power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant DPAK packaging.

Supply support for STGD6M65DF2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STGD6M65DF2 belongs to the M-series IGBT product line, engineered specifically for high-efficiency, high-reliability inverter systems where low conduction loss, short-circuit robustness, and safe paralleling are mandatory - especially in compact industrial power conversion equipment.

FAQ

What is the maximum gate-emitter voltage rating for STGD6M65DF2?

The absolute maximum gate-emitter voltage is ±20 V, as specified in Table 1. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and minimize Miller-induced false triggering during high di/dt switching events.

Does STGD6M65DF2 require an external freewheeling diode?

No - STGD6M65DF2 integrates a soft, fast-recovery antiparallel diode optimized for commutation in inductive loads. The diode has t_rr = 140 ns and Q_rr = 210 nC at T_J = 25 °C, eliminating the need for an external diode in half-bridge or inverter leg configurations used in motor drives and PFC circuits.

How does the 6 µs short-circuit withstand time translate to practical protection design?

The 6 µs rating applies under V_CC ≤ 400 V, V_GE = 15 V, and T_Jstart ≤ 150 °C. In practice, this allows time for desaturation detection and gate shutdown within 3–4 µs, leaving margin for propagation delay and logic response. It eliminates need for complex current-limiting circuits in 1–3 kW inverters with fast-acting gate drivers.

Can STGD6M65DF2 be paralleled with identical units without external emitter resistors?

Yes - its positive V_CE(sat) temperature coefficient and tight parameter distribution (±5% V_CE(sat)) enable stable current sharing. Layout symmetry (matched gate and emitter loop inductances) remains essential, but emitter resistors are not required for thermal stability in typical 2–3 device parallel configurations at ≤10 kHz switching frequency.

STGD6M65DF2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: M

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 12 A

Current - Collector Pulsed (Icm):: 24 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 6A

Power - Max:: 88 W

Switching Energy:: 36µJ (on), 200µJ (off)

Input Type:: Standard

Gate Charge:: 21.2 nC

Td (on/off) @ 25°C:: 15ns/90ns

Test Condition:: 400V, 6A, 22Ohm, 15V

Reverse Recovery Time (trr):: 140 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STGD6M65DF2 FAQ

1.How can I place an order for STGD6M65DF2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGD6M65DF2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGD6M65DF2 reliable?

The price and inventory of STGD6M65DF2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGD6M65DF2 is usually 5 days.

3.What payment methods are accepted for STGD6M65DF2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGD6M65DF2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGD6M65DF2?

STGD6M65DF2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGD6M65DF2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGD6M65DF2?

For technical support, including STGD6M65DF2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGD6M65DF2 requirements.

6.How does Aetrix verify that STGD6M65DF2 is sourced from the original manufacturer or authorized distributors?

All STGD6M65DF2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGD6M65DF2 meets industry standards.

7.What is the process for return or replacement of STGD6M65DF2?

All STGD6M65DF2 units undergo pre-shipment inspection (PSI). If there is an issue with STGD6M65DF2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGD6M65DF2 part is unused and in its original packaging.

Return procedure for STGD6M65DF2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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