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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

STMicroelectronics STGD7NB120S-1

Name: STGD7NB120S-1
Brand: STMicroelectronics
SKU: STGD7NB120S-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STGD7NB120S-1

Manufacturer:: STMicroelectronics

Category:: Single IGBTs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STGD7NB120S-1.pdf

Description:: IGBT 1200V 10A 55W IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,129

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Product details

Overview

STGD7NB120S-1 from STMicroelectronics is an N-channel 1200 V, 7 A IPAK-packaged PowerMESH™ IGBT optimized for low-frequency switching (<1 kHz), featuring 2.1 V V_CE(sat) at 7 A, 150 °C max junction temperature, and 2.27 °C/W R_thj-case, used in motor control inverters and inrush current limiters.

For engineers reviewing the STGD7NB120S-1 datasheet, STGD7NB120S-1 pinout, STGD7NB120S-1 application, or STGD7NB120S-1 equivalent, key selection factors include safe operating area (SOA)-limited pulse width, tail-current-inclusive off-losses, gate threshold voltage (3–5 V), and thermal resistance for heatsink-integrated industrial power stages.

Technical Context

This IGBT employs ST's patented PowerMESH™ strip layout for high-voltage ruggedness and low conduction loss. It operates with voltage-driven gate control, supports ±20 V V_GE rating, and exhibits 29 nC total gate charge with 570 ns turn-on delay and 4.9 µs crossover time at 960 V/7 A.

Switching behavior is characterized by 800 A/µs (di/dt)_on, 15 mJ E_off at 25 °C (rising to 22 mJ at 125 °C), and SOA-limited pulse operation-tail current contributes significantly to turn-off losses per JEDEC standard.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE(SUS)	1200 V - Withstands DC bus voltages up to 1200 V in hard-switched inverter legs
V_CE(sat)	2.1 V @ 7 A, 15 V V_GE - Enables low conduction loss in 50/60 Hz motor drive output stages
I_C (cont.)	7 A @ T_C = 100 °C - Defines continuous current capability under real heatsink conditions
R_thj-case	2.27 °C/W - Determines minimum heatsink thermal resistance required to maintain T_j ≤ 150 °C
Q_g	29 nC @ 960 V, 7 A - Sets gate driver current and energy requirements for reliable 1 kHz switching
E_off	15 mJ @ 25 °C - Dominates power loss budget in low-frequency hard-switched applications
V_GE(th)	3–5 V - Ensures robust noise immunity and predictable turn-on across temperature

Pinout & Package

Package: IPAK (TO-251), surface-mount with isolated tab; thermally enhanced plastic package rated for 150 °C junction operation and compatible with standard SMT reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Power emitter terminal	Low-inductance return path for load current; connects directly to PCB ground plane or emitter star point
2 (Collector)	High-side power collector	Connects to DC bus positive; requires short, low-L routing to minimize voltage overshoot during turn-off
3 (Gate)	Control input	High-impedance MOS-controlled terminal; requires <100 Ω series gate resistor to damp ringing and control di/dt

Key Features

Feature	Design Value
PowerMESH™ strip layout	Enables 1200 V breakdown with lower on-state resistance vs. planar IGBTs of same die size
Suffix "S" optimization	Minimizes V_CE(sat) at cost of higher switching loss-ideal for <1 kHz line-frequency applications
Tail-current-inclusive E_off	Accurately reflects total turn-off energy including minority-carrier recombination tail, critical for thermal design
SOA-limited pulse width	Defines maximum safe single-pulse duration under specified V_CE/I_C conditions-prevents second breakdown

Applications

Motor Control Inverter

Light Dimmer Circuit

Use Scenario: Single-phase AC induction motor speed control in HVAC blowers and pump drives.

IC Role / Device Role / Timing Role: Low-frequency (50–400 Hz) half-bridge switch handling 7 A RMS load current at 1200 V DC bus.

Use Value: 2.1 V V_CE(sat) reduces conduction loss by >30% vs. comparable 1200 V IGBTs, lowering heatsink size and system cost.

Use Scenario: Phase-angle dimming for 120/230 V AC incandescent and halogen lamps.

IC Role / Device Role / Timing Role: Leading-edge triggered AC switch operating at line frequency with zero-crossing synchronization.

Use Value: High V_BR(CES) (1200 V) provides margin against line transients; low V_GE(th) ensures reliable triggering from microcontroller GPIO.

Inrush Current Limiter

DC Link Protection Switch

Use Scenario: Soft-start circuit limiting surge current into large electrolytic capacitor banks in power supplies.

IC Role / Device Role / Timing Role: Controlled turn-on switch conducting 7 A peak for <100 ms during startup, then bypassed.

Use Value: SOA-limited pulse rating enables precise inrush timing without thermal runaway; 150 °C T_j(max) supports compact enclosure designs.

Use Scenario: DC link disconnect switch in solar string inverters and UPS systems.

IC Role / Device Role / Timing Role: High-voltage isolation switch opening under fault conditions at up to 1200 V DC.

Use Value: 20 V V_ECR reverse battery rating allows bidirectional blocking in DC-coupled protection topologies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGD10NB120S-1	10 A continuous rating, identical V_CE(sat) and SOA profile	Higher current headroom for same footprint; requires larger gate drive energy (35 nC Q_g)	Select when sustained >7 A load current or extended pulse duty is required
FGB30N120FTU	1200 V, 30 A, 2.2 V V_CE(sat), TO-247 package, 65 nC Q_g	Higher current capacity but larger footprint and higher switching loss; not pin-compatible	Choose for higher-power systems where board space and thermal mass allow TO-247 mounting

Compared with STGD10NB120S-1, the STGD7NB120S-1 offers tighter thermal design margins in constrained IPAK layouts; versus FGB30N120FTU, it trades peak current and package robustness for smaller size and lower gate drive demand in sub-1 kW applications.

Availability

STGD7NB120S-1 is available at Aetrix Electronics and suitable for motor control inverters, light dimmers, inrush current limiters, and DC link protection switches requiring stable component supply and long-term industrial availability.

Supply support for STGD7NB120S-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

The PowerMESH™ IGBT product line targets cost-sensitive, low-frequency power conversion-emphasizing low V_CE(sat), rugged SOA, and thermal efficiency in IPAK and TO-220 packages for motor drives and AC control.

FAQ

What is the maximum allowable gate-emitter voltage for STGD7NB120S-1?

The absolute maximum V_GE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent transient overvoltage during switching transitions or layout parasitics.

Can STGD7NB120S-1 be used in hard-switched PFC circuits?

No-it is not optimized for high-frequency hard switching. Its 15 mJ E_off and tail-current dependence make it unsuitable above ~1 kHz. For PFC, ST recommends devices like STGW40H65DFB (650 V trench-gate) with faster recovery and lower E_off.

Is the IPAK package electrically insulated?

No-the collector (pin 2) is internally connected to the metal tab. The tab must be electrically isolated from heatsinks using insulating pads or mica washers unless the heatsink is at collector potential. Thermal interface material must not compromise this isolation.

How does temperature affect V_CE(sat) performance?

V_CE(sat) increases with junction temperature: 1.6 V at 25 °C → 2.1 V at 100 °C (7 A, 15 V V_GE). This positive TC improves current sharing in parallel configurations but raises conduction loss in thermally unmanaged designs.

STGD7NB120S-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 10 A

Current - Collector Pulsed (Icm):: 20 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 7A

Power - Max:: 55 W

Switching Energy:: 15mJ (off)

Input Type:: Standard

Gate Charge:: 29 nC

Td (on/off) @ 25°C:: 570ns/-

Test Condition:: 960V, 7A, 1kOhm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251 (IPAK)

STGD7NB120S-1 FAQ

1.How can I place an order for STGD7NB120S-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STGD7NB120S-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STGD7NB120S-1 reliable?

The price and inventory of STGD7NB120S-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGD7NB120S-1 is usually 5 days.

3.What payment methods are accepted for STGD7NB120S-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGD7NB120S-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STGD7NB120S-1?

STGD7NB120S-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STGD7NB120S-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STGD7NB120S-1?

For technical support, including STGD7NB120S-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGD7NB120S-1 requirements.

6.How does Aetrix verify that STGD7NB120S-1 is sourced from the original manufacturer or authorized distributors?

All STGD7NB120S-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGD7NB120S-1 meets industry standards.

7.What is the process for return or replacement of STGD7NB120S-1?

All STGD7NB120S-1 units undergo pre-shipment inspection (PSI). If there is an issue with STGD7NB120S-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STGD7NB120S-1 part is unused and in its original packaging.

Return procedure for STGD7NB120S-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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