My Inquiry
My Account
STMicroelectronics STGD7NB60KT4
- Part No.:
- STGD7NB60KT4
- Manufacturer:
- STMicroelectronics
- Category:
- Single IGBTs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STGD7NB60KT4.pdf
- Description:
- IGBT 600V 14A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,240
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STGD7NB60KT4 from STMicroelectronics is an N-channel 600 V, 7 A short-circuit-rated PowerMESH™ IGBT in DPAK (TO-252) package, optimized for high-frequency motor control and resonant SMPS topologies. It delivers VCE(sat) ≤ 2.8 V at 7 A/100°C, 10 µs short-circuit withstand time at Tj = 125°C, and low gate charge (Qg = 32.7 nC), enabling efficient hard-switching operation in industrial inverters.
For engineers reviewing the STGD7NB60KT4 datasheet, STGD7NB60KT4 pinout, STGD7NB60KT4 application, or STGD7NB60KT4 equivalent, key selection criteria include verified short-circuit ruggedness, thermal resistance (Rthj-case = 1.4 °C/W), gate drive compatibility with ±20 V rating, and DPAK footprint suitability for compact power stage layouts.
Technical Context
This IGBT employs ST's patented PowerMESH™ strip layout to achieve high current density and low conduction loss while maintaining robust short-circuit capability. Its gate threshold voltage (VGE(th) = 5–7 V) ensures reliable turn-on margin under noisy conditions, and its low Cies (495 pF) supports fast switching with minimal EMI generation.
The device is characterized for operation up to Tj = 150°C with specified dynamic parameters at both 25°C and 125°C junction temperatures. Switching losses (Eon = 980 µJ, Eoff = 300 µJ @ 125°C) are validated using a standardized inductive load test circuit with RG = 10 Ω and VGE = 15 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 600 V - Withstands DC bus voltages up to 400 V AC input rectified systems with 50% safety margin. |
| IC (continuous @ TC = 100°C) | 7 A - Sustains full rated output current in thermally constrained motor drive PCB layouts. |
| VCE(sat) max | 2.8 V @ 7 A / 100°C - Limits conduction loss to ≤19.6 W at full load, reducing heatsink requirements. |
| tscw | 10 µs @ VCE = 0.5 × VBR(CES), Tj = 125°C - Enables hardware-level fault response without external desaturation detection. |
| Qg | 32.7 nC @ VGE = 15 V - Compatible with standard 1–2 A peak gate drivers (e.g., STGAP2SICSN) without excessive drive power. |
| Rthj-case | 1.4 °C/W - Allows 56 W dissipation with ≤78.4°C case-to-junction rise, supporting forced-air-cooled designs. |
| Cies | 495 pF @ VCE = 25 V - Reduces Miller-induced shoot-through risk and eases gate driver stability design. |
Pinout & Package
DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; surface-mount compatible with standard reflow profiles per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | High-impedance MOS-gated terminal requiring ≤±20 V drive; low Qge (5.9 nC) enables fast turn-on. |
| 2 (Emitter) | Power return reference | Low-inductance emitter path critical for stable switching; connects directly to PCB ground plane. |
| 3 (Collector) | High-side power output | Exposed drain pad (Pin 3) serves as main current path and thermal interface to heatsink or copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Short-circuit rated | 10 µs withstand at 125°C junction temperature - eliminates need for complex active desat protection in cost-sensitive inverters. |
| Low VCE(sat) | ≤2.3 V typ. @ 7 A / 25°C - reduces conduction loss by ~25% vs. legacy 600 V IGBTs, improving system efficiency at partial load. |
| Optimized for high frequency | Turn-off switching loss Eoff = 300 µJ @ 125°C - enables operation up to 50 kHz in PFC stages without excessive thermal penalty. |
| PowerMESH™ die structure | Patented strip layout - achieves uniform current distribution across die area, minimizing localized hot spots during overload. |
| ECOPACK® compliant | Lead-free second-level interconnect - meets RoHS and JEDEC JESD97 marking requirements for industrial and consumer applications. |
Applications
| Industrial Motor Drives | Resonant SMPS |
|---|---|
Use Scenario: 3-phase inverter stage in HVAC compressor drives operating at 16–20 kHz switching frequency. IC Role / Device Role / Timing Role: Main switching device in leg configuration; handles bidirectional reactive current and regenerative braking energy. Use Value: Short-circuit ruggedness allows direct integration into field-oriented control (FOC) systems without auxiliary protection ICs. |
Use Scenario: Half-bridge primary switch in LLC resonant converter for server PSUs (48 V output, 1 kW). IC Role / Device Role / Timing Role: High-side switch synchronized to zero-voltage switching (ZVS) transitions; operates with <100 ns dead-time tolerance. Use Value: Low Cres (13 pF) minimizes capacitive turn-on loss, preserving ZVS over wide load range. |
| Hard-Switching PFC | Appliance Inverters |
Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for industrial UPS systems. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch handling 10 A peak inductor current at 100 kHz. Use Value: 7 A rated current at 100°C case temperature supports derating-free design in enclosed cabinets. |
Use Scenario: BLDC motor controller in washing machine drum drive (24 V DC bus, 15 kHz PWM). IC Role / Device Role / Timing Role: Low-side switch in 6-step commutation; subjected to repetitive di/dt > 50 A/µs during phase transitions. Use Value: Robust dV/dt immunity (>1000 V/µs) prevents false triggering during high-noise commutation events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGP7NB60K | Same die, TO-220 package; Rthj-case = 1.56 °C/W vs. 1.4 °C/W for DPAK; higher mounting torque requirement. | Preferred for prototyping or low-volume through-hole assembly; less suitable for automated SMT production. | Select when mechanical mounting rigidity outweighs thermal performance and board space constraints. |
| IRGB8B60KDPBF | 600 V / 8 A; VCE(sat) = 2.7 V @ 8 A / 25°C; tscw = 1.5 µs (not short-circuit rated per datasheet); higher Qg = 52 nC. | Lacks guaranteed short-circuit withstand; requires external desat detection for motor control safety compliance. | Choose only for non-safety-critical SMPS where gate drive headroom permits higher Qg penalty. |
Compared with STGP7NB60K, STGD7NB60KT4 offers better thermal performance and SMT compatibility; versus IRGB8B60KDPBF, it provides certified short-circuit ruggedness and lower gate drive demand-critical for IEC 61800-compliant drives.
Availability
STGD7NB60KT4 is available at Aetrix Electronics and suitable for industrial motor drives, resonant SMPS, and hard-switching PFC applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for STGD7NB60KT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
The PowerMESH™ IGBT product line targets high-efficiency, high-reliability power conversion systems-specifically engineered for motor control, UPS, and switched-mode power supplies where ruggedness and thermal performance are decisive.
FAQ
What is the maximum gate-emitter voltage rating for STGD7NB60KT4?
The absolute maximum gate-emitter voltage is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative bias below –10 V may cause latch-up in parallel configurations. Gate drive circuits must include clamping diodes or Zener networks to enforce this limit during transients.
Does STGD7NB60KT4 include an integrated freewheeling diode?
No, STGD7NB60KT4 is a standalone IGBT without an integrated body diode or co-packaged freewheeling diode. External ultrafast recovery diodes (e.g., STTH8R06D) must be used in inductive load applications to handle reverse current during switching transitions and prevent destructive voltage spikes.
What is the thermal resistance from junction to case, and how is it measured?
Rthj-case is 1.4 °C/W (maximum), measured per JEDEC JESD51-14 with the device mounted on a 1-in² copper pad on 1-oz FR-4 PCB, using transient dual-interface testing. This value assumes full solder coverage of the exposed drain pad; incomplete wetting increases thermal resistance by up to 30%.
Can STGD7NB60KT4 be paralleled for higher current capacity?
Yes, but only with strict matching: devices must be from the same wafer lot, mounted identically on symmetric copper pours, and driven by matched gate resistors (<5% tolerance) and Kelvin-connected gate traces. Parallel operation requires individual emitter degeneration resistors (0.1 Ω) to ensure current sharing within ±10% at full load.
STGD7NB60KT4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- PowerMESH™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 14 A
- Current - Collector Pulsed (Icm):
- 56 A
- Vce(on) (Max) @ Vge, Ic:
- 2.8V @ 15V, 7A
- Power - Max:
- 70 W
- Switching Energy:
- 95µJ (on), 140µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 32.7 nC
- Td (on/off) @ 25°C:
- 15ns/50ns
- Test Condition:
- 480V, 7A, 10Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STGD7NB60KT4 FAQ
1.How can I place an order for STGD7NB60KT4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STGD7NB60KT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STGD7NB60KT4 reliable?
The price and inventory of STGD7NB60KT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STGD7NB60KT4 is usually 5 days.
3.What payment methods are accepted for STGD7NB60KT4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STGD7NB60KT4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STGD7NB60KT4?
STGD7NB60KT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STGD7NB60KT4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STGD7NB60KT4?
For technical support, including STGD7NB60KT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STGD7NB60KT4 requirements.
6.How does Aetrix verify that STGD7NB60KT4 is sourced from the original manufacturer or authorized distributors?
All STGD7NB60KT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STGD7NB60KT4 meets industry standards.
7.What is the process for return or replacement of STGD7NB60KT4?
All STGD7NB60KT4 units undergo pre-shipment inspection (PSI). If there is an issue with STGD7NB60KT4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STGD7NB60KT4 part is unused and in its original packaging.
Return procedure for STGD7NB60KT4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STGD7NB60KT4 Tags
;;2.jpg)
-
STGD3NB60SDT4
STMicroelectronics
-
HGTD1N120BNS9A
onsemi
-
STGF7NB60SL
STMicroelectronics
-
FGD5T120SH
onsemi
-
STGB3NC120HDT4
STMicroelectronics
-
IKP20N60TXKSA1
Infineon Technologies
-
STGW30H60DFB
STMicroelectronics
-
STGB30M65DF2
STMicroelectronics
-
IKB20N60TATMA1
Infineon Technologies
-
STGB30V60DF
STMicroelectronics
-
IKW30N60DTPXKSA1
Infineon Technologies
-
ISL9V3040P3
onsemi
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
